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2. 3-D NAND Oxide/Nitride Tier Stack Thickness and Zonal Measurements With Infrared Metrology.

5. Measurement of W-recess profile in an advanced node 3D NAND device with IRCD technology utilizing a specialized design-rule compliant target

9. In situ spectroscopic ellipsometry and rigorous coupled wave analysis for real time profile evolution of atomic layer deposited films inside SiO2 nanotrenches.

12. Risk assessment and screening for sexually transmitted infections, HIV, and hepatitis virus among long-distance truck drivers in New Mexico, 2004-2006

13. Ellipsometric critical dimension metrology employing mid-infrared wavelengths for high-aspect-ratio channel hole module etch processes

18. Runway Safety Area Slope Failure

36. Sensitivity analysis and line edge roughness determination of 28-nm pitch silicon fins using Mueller matrix spectroscopic ellipsometry-based optical critical dimension metrology

41. Comparison of HIV-antibody prevalence in patients consenting to and declining HIV-antibody testing in an STD clinic

42. Modeling ellipsometric measurement of three-dimensional structures with rigorous coupled wave analysis and finite element method simulations.

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