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Your search keyword '"Kekuda, Dhananjaya"' showing total 191 results
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191 results on '"Kekuda, Dhananjaya"'

25. Channel length dependency in Sn: ZnO/ZrO2 thin film transistors: a performance analysis.

Author

Salunkhe, Parashurama, Bhat, Prashant, and Kekuda, Dhananjaya

Subjects
ELECTRIC breakdown, THIN films, MAGNETRON sputtering, CHANNELS (Hydraulic engineering), STRAY currents, THIN film transistors
Abstract

Herein, we report electronic transport properties of transparent thin film transistors (TFTs) prepared using Sn: ZnO/ZrO2 thin films grown by dc magnetron sputtering. The fabricated devices potentially operate in low voltage mode with a high breakdown electric field. The effect of active channel length on the TFT characteristics is discussed. The high-k ZrO2 thin films were deposited at room temperature and their physical properties and their electrical characteristics such as leakage current and impedance characteristics were investigated prior to TFT fabrication. The fabricated TFTs have exhibited a current on/off ratio 105, a maximum field effect mobility of 18.30 cm2(V.s)−1 and a sub-threshold swing slope of 223 mV/dec. The average optical transmittance of the bilayers was ~ 85% in the visible region. The present results show that the chosen materials are promising for the fabrication of transparent TFTs. [ABSTRACT FROM AUTHOR]

Published
2024
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50. DC sputtered ZrO2/Zn(1−x)Sn(x)O thin-film transistors and their property evaluation.

Author

Bhat, Prashant, Salunkhe, Parashurama, and Kekuda, Dhananjaya

Subjects
DC sputtering, INDIUM gallium zinc oxide, X-ray photoelectron spectroscopy, TRANSISTORS, ATOMIC force microscopy, REACTIVE sputtering
Abstract

A bottom gate staggered 30 nm Zn(1−x)Sn(x)O (x = 0.14) (TZO)-based thin-film transistors (TFTs) were fabricated using DC magnetron reactive sputtering method. Highly transparent 120 nm dc sputtered ZrO2 was used as a gate dielectric. The oxygen flow rate was varied from 20 to 24% during channel layer (TZO) coating and its effect on structural, morphological, optical, chemical, and electrical parameters were systematically studied. A nano scale roughness was noticed by atomic force microscopy (AFM), and ultra-smooth nature in root mean square roughness (RMS) was observed with an increment in the oxygen flow ratio. The increase in the oxygen-related defects with increase in the oxygen flow ratio in channel layer was evident from X-ray photoelectron spectroscopy (XPS). The electrical characterization of gate dielectric was carried out for Al–ZrO2–Al structure. The high capacitance density ~ 121.9 nF/cm2 for 120 nm ZrO2 was obtained from the capacitance–voltage (C–V) measurement. The fabricated TFTs operated in n-channel depletion mode and indicated pinch-off region at lower source–drain voltages. In addition, the transfer characteristics of TFTs confirmed Ion/Ioff ratio of 105, with a field effect mobility of 23 cm2/V.s. This low temperature processed TFT unlocks the possibility of use in the next generation foldable display technology. [ABSTRACT FROM AUTHOR]

Published
2023
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