1. A novel Ccb and Rb reduction technique for high-speed SiGe HBTs
- Author
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Marwan H. Khater, Keith Macha, Bob Liedy, Renata Camillo-Castillo, John J. Pekarik, Philip V. Kaszuba, Qizhi Liu, Bjorn Zetterlund, Leon Moszkowicz, Peng Cheng, James W. Adkisson, Kurt A. Tallman, Peter B. Gray, and David L. Harame
- Subjects
Novel technique ,Materials science ,business.industry ,Semiconductor materials ,Oxide ,chemistry.chemical_element ,Capacitance ,Reduction (complexity) ,chemistry.chemical_compound ,chemistry ,Electronic engineering ,Reticle ,Optoelectronics ,Boron ,business - Abstract
In this paper, we discuss a novel technique to reduce base resistance (R b ) and collector-base capacitance (C cb ) for higher F max in high-speed SiGe HBTs. In order to reduce C cb , we first located the origins of the different components of C cb through AC extraction. Then we utilized scanning capacitance measurements (SCM) to examine the shape of the collector-base depletion. We then propose a method to reduce the extrinsic C cb , namely by using reticle enhancement techniques to print a blocking oxide layer to inhibit boron outdiffusion. An additional benefit was the reduction of R b by reducing the base link resistance.
- Published
- 2012
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