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This paper presents a power consumption reduction aspect for a 100-GHz low-noise amplifier. Two designs implemented in 0.13-µm SiGe BiCMOS technology demonstrate state-of-the-art performance, whereas $P_{\mathrm{DC}}$ is reduced from 23.5 mW for the standard version to 3.8 mW for the low-power version. Two circuits exhibit a measured gain of 22 dB and 16 dB and a noise figure of 4 dB and 6.3 dB at 100 GHz. An input 1-dB compression point for the standard and the low-power version is -24.5 dBm and -26.5 dBm, respectively. The occupied IC area in both cases is 0.018 mm$^2$ and 0.014 mm$^2$ excluding the pads, which proves to be the most compact design among previously reported in the frequency range of interest.

In last decade, SiGe BiCMOS technologies open a new cost-efficient market first at mm-wave frequencies, then at sub-THz and THz range. Starting with the commercial use of automotive radars at 77 GHz, and the demand for 120/140 GHz radars, the market now has a strong interest on low-cost silicon based technologies for such high frequencies. The driving force behind the BiCMOS is not anymore only radar applications but also 5G/6G communication systems, operating at 60, 140 or even 240/300 GHz. Furthermore, the strong need on the driving circuitries of photonics components has created a mass market of high speed communication circuitries. The latest developments on SiGe HBTs with fmax of beyond 700 GHz boosts the research and development effort on circuit and system area to take share from the new markets. In parallel to the developments on SiGe HBT performance, “More-than- Moore” path, which covers all the additional functionalities to the standard CMOS process (i.e. MEMS devices, microfluidics, photonics, etc…), allows to realize multi-functional circuits and systems. Heterogeneous integration as a key and enabler technology for the multi-functional systems has also great importance these days. Hetero integration of different technologies such as high scaled CMOS, SiGe BiCMOS or even III-V ones has become real. Such integration of multi-chip technologies provides the highest performance with the most efficient size and power consumption; thus paves the way for next generation smart systems integration. In this talk, approaches used for the integration of different More-than-Moore modules into a BiCMOS process will be presented. New hetero-integration technologies and corresponding challenges will be discussed.

Belli bir yöre ağzına dayanan yazı dili, tek başına dilin bütün inceliklerini ve zenginliklerini yansıtmaktan yoksundur. Yazı dilimizin temelini oluşturan Türkiye Türkçesi ağızları, barındırdığı hacimli dil malzemesiyle bugün Türkiye Türkçesi gramerinin çözüm bekleyen birçok konusunun aydınlatılmasında temel başvuru kaynaklarındandır. Bu yüzden ağızlar üzerine yapılan çalışmalar büyük önem taşımaktadır. Son yıllarda Türkoloji çalışmalarının yoğunlaştığı alanlardan biri Türkiye Türkçesi ağızlarıdır. Özellikle 1980’li yıllardan sonra ülkemizde artmaya başlayan ağız çalışmaları sonucunda hemen her bölgeyle ilgili yayın yapılmış durumdadır. Çalışmaların önemli bir kısmı bölge ağızlarının özelliklerini tespit etmeye yönelik derleme çalışmalarıdır. Türkiye Türkçesi Ağızlarının ele alındığı bu yazıda ağız terimi, ağız sınıflandırmaları, ağız araştırmalarının bugünkü durumu, ağız araştırmalarında karşılaşılan sorunlar ve yapılan yanlışlar gibi temel konular üzerinde durulacaktır.

International audience

International audience

In this letter, we report the design and characterization of a cryogenically cooled silicon germanium (SiGe) low-noise amplifier (LNA) covering a frequency range from 50 to 70 GHz. The amplifier was fabricated in 0.13- $\mu \text{m}$ SiGe BiCMOS technology. At 20 K, the LNA showed stable operation and an average noise figure (NF) of 2.2 dB (191 K) in the 52–65-GHz frequency band. This means 4.4 times improvement compared to the noise temperature at room temperature conditions for the same frequency band. When biased to lowest noise operation at cryogenic conditions of 20 K, the measured small signal gain was 18.5 dB at 60 GHz, while the consumed power was 6.3 mW. According to the authors’ knowledge, this is the first report on cryogenic millimeter-wave SiGe LNA and the lowest NF measured for a SiGe LNA in the 50–70-GHz frequency range.