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The $d^5$ electron configurations under the crystal field, spin-orbit coupling, and Coulomb interaction give rise to a plethora of profound ground states. Ruthenium perovskite oxides exhibit a number of unconventional properties yet the Ru$^{4+}$ state ($4d^4$) is usually stable in these materials. In this regard, Ru$^{3+}$ ions in perovskite materials are expected to be a mesmerising playground of $4d^5$ electron configurations. Here, we report measurements of x-ray photoemission spectroscopy on recently synthesized perovskite ruthenium oxide thin films, LaRuO$_3$ and NdRuO$_3$, whose valence state of the ruthenium ions is trivalent. We discuss correlation and spin-orbit effects from the valence-band spectra, in particular an additional peak structure around 3-5 eV, reminiscent of the so-called 3 eV peak observed in Sr$_2$RuO$_4$. Moreover, we find that the core-level spectra of these materials are quantitatively different from those in other ruthenates which possess Ru$^{4+}$ ions, e.g., SrRuO$_3$. We therefore argue that the core level spectra of LaRuO$_3$ and NdRuO$_3$ are peculiar to the Ru$^{3+}$ states., Comment: 5 pages, 4 figures

Intriguingly conducting perovskite interfaces between ordinary band insulators are widely explored, whereas similar interfaces with Mott insulators are still not quite understood. Here we address the (001), (110), and (111) interfaces between the LaTiO$_{3}$ Mott- and large band gap KTaO$_{3}$ insulators. Based on first-principles calculations, we reveal a mechanism of interfacial conductivity, which is distinct from a formerly studied one applicable to interfaces between polar wide band insulators. Here the key factor causing conductivity is the matching of oxygen octahedra tilting in KTaO$_{3}$ and LaTiO$_{3}$ which, due to a small gap in the LaTiO$_{3}$ results in its sensitivity to the crystal structure, yields metalization of its overlayer and following charge transfer from Ti to Ta. Our findings, also applicable to other Mott insulators interfaces, shed light on the emergence of conductivity observed in LaTiO$_{3}$/KTaO$_{3}$~(110) where the ''polar`` arguments are not applicable and on the emergence of superconductivity in these structures.

Engineering of magnetic heterostructures for spintronic applications has entered a new phase, driven by the recent discoveries of topological materials and exfoliated van der Waals materials. Their low-dimensional properties can be dramatically modulated in designer heterostructures via proximity effects from adjacent materials, thus enabling the realization of diverse quantum states and functionalities. Here we investigate spin-orbit coupling (SOC) proximity effects of Pt on the recently discovered quasi-two-dimensional ferromagnetic state at FeSi surface. Skyrmionic bubbles (SkBs) are formed as a result of the enhanced interfacial Dzyloshinskii-Moriya interaction. The strong pinning effects on the SkBs are evidenced from the significant dispersion in size and shape of the SkBs and are further identified as a greatly enhanced threshold current density required for depinning of the SkBs. The robust integrity of the SkB assembly leads to the emergence of higher-order nonlinear Hall effects in the high current density regime, which originate from nontrivial Hall effects due to the noncollinearity of the spin texture, as well as from the current-induced magnetization dynamics via the augmented spin-orbit torque., Comment: 4 figures

Complex oxides are mesmerizing material systems to realize multiple physical properties and functionalities by integrating different elements in a single compound. However, owing to the chemical instability, not all the combinations of elements can be materialized despite the intriguing potential expected from their magnetic and electronic properties. In this study, we demonstrate an epitaxial stabilization of orthorhombic Ru$^{3+}$ perovskite oxides: LaRuO$_3$ and NdRuO$_3$, and their magnetotransport properties that reflect the difference between non-magnetic La$^{3+}$ and magnetic Nd$^{3+}$. Above all, an unconventional anomalous Hall effect accompanied by an inflection point in magnetoresistance is observed around 1.3 T below 1 K for NdRuO$_3$, which is ascribed to topological Hall effect possibly due to a non-coplanar spin texture on Nd$^{3+}$ sublattice. These studies not only serve a new testbed for the interplay between spin-orbit coupling and Coulomb interaction but also open a new avenue to explore topological emergent phenomena in well-studied perovskite oxides.

Design of epitaxial interfaces is a pivotal way to engineer artificial structures where new electronic phases can emerge. Here we report a systematic emergence of interfacial superconducting state in epitaxial heterostructures of LaTiO3 and KTaO3. The superconductivity transition temperature increases with decreasing the thickness of LaTiO3. Such behavior is observed for both (110) and (111) crystal oriented structures. For thick samples, the finite resistance developing below the superconducting transition temperature increases with increasing LaTiO3 thickness. Consistent with previous reports, the (001) oriented heterointerface features high electron mobility of 250 cm2/Vs and shows no superconducting transition down to 40 mK. Our results imply a non-trivial impact of LaTiO3 on the superconducting state and indicate how superconducting KTaO3 interfaces can be integrated with other oxide materials., Comment: accepted in APL Materials

We present an epitaxial stabilization of pyrochlore Bi$_2$Rh$_2$O$_7$ on Y-stabilized ZrO$_2$ (YSZ) (111) substrate by inserting a pyrochlore Eu$_2$Ti$_2$O$_7$ template layer, otherwise Bi-based layered structures being formed directly on YSZ (111) substrate. This result reveals that "iso-structural crystal phase" plays an important role in the interfacial phase control. The Bi$_2$Rh$_2$O$_7$ film exhibits $p$-type electrical conduction with the lowest longitudinal resistivity ($\rho_\mathrm{xx}$) among the reported Rh pyrochlore oxides. Such parameters as $\rho_\mathrm{xx}$, carrier density, and mobility show almost no temperature dependence in the measured range of 2$-$300 K, indicating Bi$_2$Rh$_2$O$_7$ as one of the rare examples of conducting pyrochlore oxides.

Layered oxides have been intensively studied due to their high degree of freedom in designing various electromagnetic properties and functionalities. While Bi-based layered supercell (LSC) compounds [Bi$_n$O$_{n+\delta}$]-[$M$O$_2$] ($M$ = Mn, Mn/Al, Mn/Fe, or Mn/Ni; $n=2, 3$) are a group of prospective candidates, all of the reported compounds are insulators. Here, we report on the synthesis of two novel metallic LSC compounds [Bi$_{n}$O$_{n+\delta}$]-[RhO$_2$] ($n=2, 3$) by pulsed laser deposition and subsequent annealing. With tuning the thickness of the sublattice from Bi$_2$O$_{2+\delta}$ to Bi$_3$O$_{3+\delta}$, a dimensionality-dependent electrical transport is revealed from a conventional metallic transport in $n=2$ to a localized transport in $n=3$. Our successful growth will be an important step for further exploring novel layered oxide compounds.

Perovskite chalcogenides have emerged as a new class of semiconductors with tunable band gap in the visible-infrared region. High quality thin films are critical to understand the fundamental properties and realize the potential applications based on these materials. We report growth of quasi-epitaxial thin films of quasi one-dimensional (quasi-1D) hexagonal chalcogenide BaTiS$_3$ by pulsed laser deposition. We identified the optimal growth conditions by varying the growth parameters such as the substrate temperature and H2S partial pressure and examined their effects on the thin film structure. High resolution thin film X-Ray diffraction shows strong texture in the out-of-plane direction, whereas no evidence of in-plane relationship between the film and the substrate is observed. Grazing incidence wide-angle X-ray scattering and scanning transmission electron microscopy studies reveal the presence of weak epitaxial relationships of the film and the substrate, despite a defective interface. Our study opens up a pathway to realize quasi-1D hexagonal chalcogenide thin films and their heterostructures with perovskite chalcogenides., Comment: 25 pages, 6 figures

We demonstrate an electric field control of anomalous Hall effect emerging in CaIrO$_3$/CaMnO$_3$ heterostructures. We fabricate both electron-type and hole-type carrier samples by tuning epitaxial strain and then control the carrier density in CaIrO$_3$ layer via electric double layer gating technique. As the Fermi energy of CaIrO$_3$ is tuned close to the Dirac line node, anomalous Hall conductivity is enlarged in both carrier-type samples. This result reveals that the anomalous Hall effect comes from the intrinsic origin reflecting the Dirac like dispersion in CaIrO$_3$. We propose that band splitting induced by the interface ferromagnetism yields several band crossing points near the Dirac line node. These points play as a source of the Berry curvature and contribute to the anomalous Hall effect.

Pyrochlore oxides $A_2B_2$O$_7$ have been a fruitful playground for condensed matter physics because of the unique geometry in the crystal structure. Especially focusing on the $A$-site tetrahedral sub-lattice, in particular, pyrochlore oxides $A_2B_2$O$_7$ ($A$ = Sn, Pb and $B$ = Nb, Ta), recent theoretical studies predict the emergence of the "quasi-flat band" structure as a result of the strong hybridization between filled $A$-n$s$ and O-2$p$ orbitals. In this work, we have established the growth conditions of Sn$_2$Nb$_2$O$_7$, Sn$_2$Ta$_2$O$_7$, Pb$_2$Nb$_2$O$_7$, and Pb$_2$Ta$_2$O$_7$ films by pulsed laser deposition on Y-stabilized ZrO$_2$ (111) substrates to elucidate their optical properties. Absorption-edge energies, both for direct and indirect bandgaps, increase in the order of Sn$_2$Nb$_2$O$_7$, Sn$_2$Ta$_2$O$_7$, Pb$_2$Nb$_2$O$_7$, and Pb$_2$Ta$_2$O$_7$. This tendency can be well explained by considering the energy level of the constituent elements. A comparison of the difference between direct and indirect bandgaps reveals that Pb$_2B_2$O$_7$ tends to have a less dispersive valence band than Sn$_2B_2$O$_7$. Our findings are consistent with the theoretical predictions and are suggestive of the common existence of the hybridized states in this class of compounds.

The symmetry breaking induced by the ferroelectric transition often triggers the emergence of topological electronic states such as Weyl fermions in ferroelectric-like metals/semimetals. Such strong coupling between the lattice deformation and electronic states is therefore essentially important for the control of novel topological phases. Here, we study the terahertz lattice and charge dynamics in ferroelectric semiconductor SnxPb1-xTe thin films hosting versatile topological phases by means of the terahertz time-domain spectroscopy. With lowering the temperature, the resonant frequency of transverse optical phonon shows the significant softening and upturn. This temperature anomaly of lattice dynamics directly indicates the displacive-type ferroelectric transition. The resulting phase diagram suggests the enhancement of ferroelectricity in the films due to compressive strain compared with the bulk crystals. The soft phonon induces the large DC and terahertz dielectric constant even in metallic state. Furthermore, we find that the Born effective charge of soft phonon mode is enhanced at around the compositions showing the band gap closing associated with the topological transition.

We present an experimental and theoretical study of the longitudinal electron spin relaxation ($T_1$) of shallow donors in the direct band-gap semiconductor ZnO. $T_1$ is measured via resonant excitation of the Ga donor-bound exciton. $T_1$ exhibits an inverse-power dependence on magnetic field $T_1\propto B^{-n}$, with $4\leq n\leq 5$, over a field range of 1.75 T to 7 T. We derive an analytic expression for the donor spin-relaxation rate due to spin-orbit (admixture mechanism) and electron-phonon (piezoelectric) coupling for the wurtzite crystal symmetry. Excellent quantitative agreement is found between experiment and theory suggesting the admixture spin-orbit mechanism is the dominant contribution to $T_1$ in the measured magnetic field range. Temperature and excitation-energy dependent measurements indicate a donor density dependent interaction may contribute to small deviations between experiment and theory. The longest $T_1$ measured is 480 ms at 1.75 T with increasing $T_1$ at smaller fields theoretically expected. This work highlights the extremely long longitudinal spin-relaxation time for ZnO donors due to their small spin-orbit coupling., Comment: 9 pages, 11 figures

While the family of layered pnictides $ABX_2$ ($A$ : rare or alkaline earth metals, $B$ : transition metals, $X$ : Sb/Bi) can host Dirac dispersions based on Sb/Bi square nets, nearly half of them has not been synthesized yet for possible combinations of the $A$ and $B$ cations. Here we report the fabrication of EuCdSb$_{\mathrm{2}}$ with the largest $B$-site ionic radius, which is stabilized for the first time in thin film form by molecular beam deposition. EuCdSb$_{\mathrm{2}}$ crystallizes in an orthorhombic $Pnma$ structure and exhibits antiferromagnetic ordering of the Eu magnetic moments at $T_\mathrm{N}=15$K. Our successful growth will be an important step for further exploring novel Dirac materials using film techniques., Comment: 12 pages, 4 figures

A three-dimensional topological insulator features a two-dimensional surface state consisting of a single linearly-dispersive Dirac cone. Under broken time-reversal symmetry, the single Dirac cone is predicted to cause half-integer quantization of Hall conductance, which is a manifestation of the parity anomaly in quantum field theory. However, despite various observations of quantization phenomena, the half-integer quantization has been elusive because a pair of equivalent Dirac cones on two opposing surfaces are simultaneously measured in ordinary experiments. Here we demonstrate the half-integer quantization of Hall conductance in a synthetic heterostructure termed a 'semi-magnetic' topological insulator, where only one surface state is gapped by magnetic doping and the opposite one is non-magnetic and gapless. We observe half quantized Faraday/Kerr rotations with terahertz magneto-optical spectroscopy and half quantized Hall conductance in transport at zero magnetic field. Our results suggest a condensed-matter realization of the parity anomaly and open a way for studying unconventional physics enabled by a single Dirac fermion., Comment: 25 pages, 7 figures

Spin-orbit coupling (SOC) is pivotal for various fundamental spin-dependent phenomena in solids and their technological applications. In semiconductors, these phenomena have been so far studied in relatively weak electron-electron interaction regimes, where the single electron picture holds. However, SOC can profoundly compete against Coulomb interaction, which could lead to the emergence of unconventional electronic phases. Since SOC depends on the electric field in the crystal including contributions of itinerant electrons, electron-electron interactions can modify this coupling. Here we demonstrate the emergence of SOC effect in a high-mobility two-dimensional electron system in a simple band structure MgZnO/ZnO semiconductor. This electron system features also strong electron-electron interaction effects. By changing the carrier density with Mg-content, we tune the SOC strength and achieve its interplay with electron-electron interaction. These systems pave a way to emergent spintronic phenomena in strong electron correlation regime and to the formation of novel quasiparticles with the electron spin strongly coupled to the density., Comment: Main Text (4 Figures), Supplementary notes (4 Figures)

We report a systematic study on the growth conditions of Sn$_{1-x}$In$_x$Te thin films by molecular beam epitaxy for maximization of superconducting transition temperature $T_\mathrm{c}$. Careful tuning of the flux ratios of Sn, In, and Te enables us to find an optimum condition for substituting rich In content ($x$ = 0.66) into Sn site in a single phase of Sn$_{1-x}$In$_x$Te beyond the bulk solubility limit at ambient pressure ($x$ = 0.5). $T_\mathrm{c}$ shows a dome-shaped dependence on In content $x$ with the highest $T_\mathrm{c}$ = 4.20 K at $x$ = 0.55, being consistent to that reported for bulk crystals. The well-regulated Sn$_{1-x}$In$_x$Te films can be a useful platform to study possible topological superconductivity by integrating them into the state-of-the-art junctions and/or proximity-coupled devices., Comment: 20 pages, 6 figures

We present an experimental study on microwave illuminated high mobility MgZnO/ZnO based two-dimensional electron systems with different electron densities and, hence, varying Coulomb interaction strength. The photoresponse of the low-temperature dc resistance in perpendicular magnetic field is examined in low and high density samples over a broad range of illumination frequencies. In low density samples a response due to cyclotron resonance (CR) absorption dominates, while high density samples exhibit pronounced microwave-induced resistance oscillations (MIRO). Microwave transmission experiments serve as a complementary means of detecting the CR over the entire range of electron densities and as a reference for the band mass unrenormalized by interactions. Both CR and MIRO-associated features in the resistance permit extraction of the effective mass of electrons but yield two distinct values. The conventional cyclotron mass representing center-of-mass dynamics exhibits no change with density and coincides with the band electron mass of bulk ZnO, while MIRO mass reveals a systematic increase with lowering electron density consistent with renormalization expected in interacting Fermi liquids.

Rapid progress of quantum transport study in topological Dirac semimetal, including observations of quantum Hall effect in two-dimensional (2D) Cd$_{\mathrm{3}}$As$_{\mathrm{2}}$ samples, has uncovered even more interesting quantum transport properties in high-quality and three-dimensional (3D) samples. However, such 3D Cd$_{\mathrm{3}}$As$_{\mathrm{2}}$ films with low carrier density and high electron mobility have been hardly obtained. Here we report the growth and characterization of 3D thick Cd$_{\mathrm{3}}$As$_{\mathrm{2}}$ films adopting molecular beam epitaxy. The highest electron mobility ($\mu$ = 3 $\times$ 10$^{4}$ cm$^{2}$/Vs) among the reported film samples has been achieved at a low carrier density ($\textit{n} = 5$ $\times$ 10$^{16}$ cm$^{-3}$). In the magnetotransport measurement, Hall plateau-like structures are commonly observed in spite of the 3D thick films ($\textit{t} = 120$ nm). On the other hand, field angle dependence of the plateau-like structures and corresponding Shubunikov-de Haas oscillations rather shows a 3D feature, suggesting the appearance of unconventional magnetic orbit, also distinct from the one described by the semiclassical Weyl-orbit equation., Comment: 11 pages, 3 figures + supplementary 6 pages, 3 figures

We report growth of superconducting Sr2RuO4 films by oxide molecular beam epitaxy (MBE). Careful tuning of the Ru flux with an electron beam evaporator enables us to optimize growth conditions including the Ru/Sr flux ratio and also to investigate stoichiometry effects on the structural and transport properties. The highest onset transition temperature of about 1.1 K is observed for films grown in a slightly Ru-rich flux condition in order to suppress Ru deficiency. The realization of superconducting Sr2RuO4 films via oxide MBE opens up a new route to study the unconventional superconductivity of this material., Comment: 10 pages, 3 figures

We report large enhancement of upper critical field Hc2 observed in superconducting Sr2RuO4 thin films. Through dimensional crossover approaching two dimensions, Hc2 except the in-plane field direction is dramatically enhanced compared to bulks, following a definite relation distinct from bulk one between Hc2 and the transition temperature. The anomalous enhancement of Hc2 is highly suggestive of important changes of the superconducting properties, possibly accompanied with rotation of the triplet d-vector. Our findings will become a crucial step to further explore exotic properties by employing Sr2RuO4 thin films., Comment: 15 pages, 4 figures

The LIGO discoveries have rekindled suggestions that primordial black holes (BHs) may constitute part to all of the dark matter (DM) in the Universe. Such suggestions came from 1) the observed merger rate of the BHs, 2) their unusual masses, 3) their low/zero spins, and 4) also from the independently uncovered cosmic infrared background (CIB) fluctuations signal of high amplitude and coherence with unresolved cosmic X-ray background (CXB). Here we summarize the prospects to resolve this important issue with electromagnetic observations using the instruments and tools expected in the 2020's. These prospects appear promising to make significant, and potentially critical, advances. We demonstrate that in the next decade, new space- and ground-borne electromagnetic instruments, combined with concurrent theoretical efforts, should shed critical light on the long-considered link between primordial BHs and DM. Specifically the new data and methodologies under this program will involve: I) Probing with high precision the spatial spectrum of source-subtracted CIB with Euclid and WFIRST, and its coherence with unresolved cosmic X-ray background using eROSITA and Athena, II) Advanced searches for microlensing of Galactic stars by the intervening Galactic Halo BHs with OGLE, Gaia, LSST and WFIRST, III) Supernovae (SNe) lensing in the upcoming surveys with WFIRST, LSST and also potentially with Euclid and JWST, IV) Advanced theoretical work to understand the details of PBH accretion and evolution and their influence on cosmic microwave background (CMB) anisotropies in light of the next generation CMB experiments, V) Better new samples and theoretical understanding involving stability and properties of ultra faint dwarf galaxies, pulsar timing, and cosmological quasar lensing., Comment: Science whitepaper submitted to the Astro2020 Decadal Survey

Oxide heterostructures are versatile platforms with which to research and create novel functional nanostructures. We successfully develop one-dimensional (1D) quantum-wire devices using quantum point contacts on MgZnO/ZnO heterostructures and observe ballistic electron transport with conductance quantised in units of 2e^{2}/h. Using DC-bias and in-plane field measurements, we find that the g-factor is enhanced to around 6.8, more than three times the value in bulk ZnO. We show that the effective mass m^{*} increases as the electron density decreases, resulting from the strong electron-electron interactions. In this strongly interacting 1D system we study features matching the 0.7 conductance anomalies up to the fifth subband. This paper demonstrates that high-mobility oxide heterostructures such as this can provide good alternatives to conventional III-V semiconductors in spintronics and quantum computing as they do not have their unavoidable dephasing from nuclear spins. This paves a way for the development of qubits benefiting from the low defects of an undoped heterostructure together with the long spin lifetimes achievable in silicon.

Noncentrosymmetric bulk crystals generate photocurrent without any bias voltage. One of the dominant mechanisms, shift current, comes from a quantum interference of electron wave functions being distinct from classical current caused by electrons' drift or diffusion. The dissipation-less nature of shift current, however, has not been fully verified presumably due to the premature understanding on the role of electrodes. Here we show that the photocurrent dramatically enhances by choosing electrodes with large work function for a $p$-type ferroelectric semiconductor SbSI. An optimized device shows a nearly constant zero-bias photocurrent despite significant variation in photocarrier mobility dependent on temperature, which could be a clear hallmark for the dissipation-less nature of shift current. Distinct from conventional photovoltaic devices, the shift current generator operates as a majority carrier device. The present study provides fundamental design principles for energy-harvesting and photo-detecting devices with novel architectures optimal for the shift current photovoltaic effect., Comment: 13 pages, 3 figures

We report on the ultrafast dynamics of charge order and structural response during the photoinduced suppression of charge and orbital order in a mixed-valence manganite. Employing femtosecond time-resolved resonant x-ray diffraction below and at the Mn K absorption edge, we present a method to disentangle the transient charge order and structural dynamics in thin films of Pr0.5Ca0.5MnO3. Based on the static resonant scattering spectra, we extract the dispersion correction of charge ordered Mn3+ and Mn4+ ions, allowing us to separate the transient contributions of purely charge order from structural contributions to the scattering amplitude after optical excitation. Our finding of a coherent structural mode at around 2.3 THz, which primarily modulates the lattice, but does not strongly affect the charge order, confirms the picture of the charge order being the driving force of the combined charge, orbital and structural transition.

The newly discovered topological Dirac semimetals host the possibilities of various topological phase transitions through the control of spin-orbit coupling as well as symmetries and dimensionalities. Here, we report a magnetotransport study of high-mobility (Cd1-xZnx)3As2 films, where the topological Dirac semimetal phase can be turned into a trivial insulator via chemical substitution. By high-field measurements with a Hall-bar geometry, magnetoresistance components ascribed to the chiral charge pumping have been distinguished from other extrinsic effects. The negative magnetoresistance exhibits a clear suppression upon Zn doping, reflecting decreasing Berry curvature of the band structure as the topological phase transition is induced by reducing the spin-orbit coupling., Comment: 16 pages, 6 figures

Half-filled Landau levels host an emergent Fermi-liquid which displays an instability towards pairing, culminating in a gapped even-denominator fractional quantum Hall ground state. While this pairing may be probed by tuning the polarization of carriers in competing orbital and spin degrees of freedom, sufficiently high quality platforms offering such tunability remain few. Here we explore the ground states at filling factor $\nu$ = 5/2 in ZnO-based two-dimensional electron systems through a forced intersection of opposing spin branches of Landau levels taking quantum numbers $N$ = 1 and 0. We reveal a cascade of phases with distinct magnetotransport features including a gapped phase polarized in the $N$ = 1 level and a compressible phase in N = 0, along with an unexpected Fermi-liquid, a second gapped, and a strongly anisotropic nematic-like phase at intermediate polarizations when the levels are near degeneracy. The phase diagram is produced by analyzing the proximity of the intersecting levels and highlights the excellent reproducibility and controllability ZnO offers for exploring exotic fractionalized electronic phases.

Magnetic materials hosting topological spin textures like magnetic skyrmion exhibit nontrivial Hall effect, namely, topological Hall effect (THE). In this study, we demonstrate the emergence of THE in thin films of half-metallic perovskite manganites. To stabilize magnetic skyrmions, we control the perpendicular magnetic anisotropy by imposing a compressive epitaxial strain as well as by introducing a small Ru doping. When the perpendicular magnetic anisotropy is tuned so that it is balanced with the magnetic dipolar interaction, the film exhibits a sizable THE in a magnetization reversal process. Real-space observations indicate the formation of skyrmions and some of them have high topological charge number. The present result opens up the possibility for novel functionalities that emerge under keen competition between the skyrmion phase and other rich phases of perovskite manganites with various orders in spin, charge, and orbital degrees of freedom., Comment: 7 pages, 9 figures

Defects in crystals are leading candidates for photon-based quantum technologies, but progress in developing practical devices critically depends on improving defect optical and spin properties. Motivated by this need, we study a new defect qubit candidate, the shallow donor in ZnO. We demonstrate all-optical control of the electron spin state of the donor qubits and measure the spin coherence properties. We find a longitudinal relaxation time T$_1$ exceeding 100 ms, an inhomogeneous dephasing time T$_2^*$ of $17\pm2$ ns, and a Hahn spin-echo time T$_2$ of $50\pm13$ $\mu$s. The magnitude of T$_2^*$ is consistent with the inhomogeneity of the nuclear hyperfine field in natural ZnO. Possible mechanisms limiting T$_2$ include instantaneous diffusion and nuclear spin diffusion (spectral diffusion). These results are comparable to the phosphorous donor system in natural silicon, suggesting that with isotope and chemical purification long qubit coherence times can be obtained for donor spins in a direct band gap semiconductor. This work motivates further research on high-purity material growth, quantum device fabrication, and high-fidelity control of the donor:ZnO system for quantum technologies.

Photoexcitation in solids brings about transitions of electrons/holes between different electronic bands. If the solid lacks an inversion symmetry, these electronic transitions support spontaneous photocurrent due to the topological character of the constituting electronic bands; the Berry connection. This photocurrent, termed shift current, is expected to emerge on the time-scale of primary photoexcitation process. We observed ultrafast time evolution of the shift current in a prototypical ferroelectric semiconductor by detecting emitted terahertz electromagnetic waves. By sweeping the excitation photon energy across the band gap, ultrafast electron dynamics as a source of terahertz emission abruptly changes its nature, reflecting a contribution of Berry connection upon interband optical transition. The shift excitation carries a net charge flow, and is followed by a swing-over of the electron cloud on the sub-picosecond time-scale of electron-phonon interaction. Understanding these substantive characters of the shift current will pave the way for its application to ultrafast sensors and solar cells., Comment: 19 pages, 5 figures

We use femtosecond x-ray diffraction to study the structural response of charge and orbitally ordered Pr$_{1-x}$Ca$_x$MnO$_3$ thin films across a phase transition induced by 800 nm laser pulses. By investigating the dynamics of both superlattice reflections and regular Bragg peaks, we disentangle the different structural contributions and analyze their relevant time-scales. The dynamics of the structural and charge order response are qualitatively different when excited above and below a critical fluence $f_c$. For excitations below $f_c$ the charge order and the superlattice is only partially suppressed and the ground state recovers within a few tens of nanosecond via diffusive cooling. When exciting above the critical fluence the superlattice vanishes within approximately half a picosecond followed by a change of the unit cell parameters on a 10 picoseconds time-scale. At this point all memory from the symmetry breaking is lost and the recovery time increases by many order of magnitudes due to the first order character of the structural phase transition.

Simultaneous transport and scanning nanoSQUID-on-tip magnetic imaging studies in Cr-(Bi,Sb)$_2$Te$_3$ modulation-doped films reveal the presence of superparamagnetic order within the quantum anomalous Hall regime. In contrast to the expectation that a long-range ferromagnetic order is required for establishing the quantum anomalous Hall state, superparamagnetic dynamics of weakly interacting nanoscale magnetic islands is observed both in the plateau transition regions as well as within the fully quantized C=$\pm$1 Chern plateaus. Modulation doping of the topological insulator films is found to give rise to significantly larger superparamagnetic islands as compared to uniform magnetic doping, evidently leading to enhanced robustness of the quantum anomalous Hall effect. Nonetheless, even in this more robust quantum state, attaining full quantization of transport coefficients requires magnetic alignment of at least 95% of the superparamagnetic islands. The superparamagnetic order is also found within the incipient C=0 zero Hall plateau, which may host an axion state if the top and bottom magnetic layers are magnetized in opposite directions. In this regime, however, a significantly lower level of island alignment is found in our samples, hindering the formation of the axion state. Comprehension and control of superparamagnetic dynamics is thus a key factor in apprehending the fragility of the quantum anomalous Hall state and in enhancing the endurance of the different quantized states to higher temperatures for utilization of robust topological protection in novel devices., Comment: 17 pages, 3 figures

We report on magnetotransport properties of a MgZnO/ZnO heterostructure subjected to weak direct currents. We find that in the regime of overlapping Landau levels, the differential resistivity acquires a quantum correction proportional to both the square of the current and the Dingle factor. The analysis shows that the correction to the differential resistivity is dominated by a current-induced modification of the electron distribution function and allows us to access both quantum and inelastic scattering rates., Comment: 4 pages, 3 figures

The spin states of Co$^{3+}$ ions in perovskite-type LaCoO$_3$, governed by complex interplay between the electron-lattice interactions and the strong electron correlations, still remain controversial due to the lack of experimental techniques which can detect directly. In this letter, we revealed the tensile-strain dependence of spin states, $i. e.$ the ratio of the high- and low-spin states, in epitaxial thin films and a bulk crystal of LaCoO$_3$ via resonant inelastic soft x-ray scattering. The tensile-strain as small as 1.0% was found to realize different spin states from that in the bulk., Comment: 5 pages, 4 figures

Exploration of novel electromagnetic phenomena is a subject of great interest in topological quantum materials. One of the unprecedented effects to be experimentally verified is topological magnetoelectric (TME) effect originating from an unusual coupling of electric and magnetic fields in materials. A magnetic heterostructure of topological insulator (TI) hosts such an exotic magnetoelectric coupling and can be expected to realize the TME effect as an axion insulator. Here we designed a magnetic TI with tricolor structure where a non-magnetic layer of (Bi, Sb)2Te3 is sandwiched by a soft ferromagnetic Cr-doped (Bi, Sb)2Te3 and a hard ferromagnetic V-doped (Bi, Sb)2Te3. Accompanied by the quantum anomalous Hall (QAH) effect, we observe zero Hall conductivity plateaus, which are a hallmark of the axion insulator state, in a wide range of magnetic field between the coercive fields of Cr- and V-doped layers. The resistance of the axion insulator state reaches as high as 10^9 ohm, leading to a gigantic magnetoresistance ratio exceeding 10,000,000% upon the transition from the QAH state. The tricolor structure of TI may not only be an ideal arena for the topologically distinct phenomena, but also provide magnetoresistive applications for advancing dissipationless topological electronics., Comment: 16 pages, 4 figures

The electronic orders in magnetic and dielectric materials form the domains with different signs of order parameters. The control of configuration and motion of the domain walls (DWs) enables gigantic, nonvolatile responses against minute external fields, forming the bases of contemporary electronics. As an extension of the DW function concept, we realize the one-dimensional quantized conduction on the magnetic DWs of a topological insulator (TI). The DW of a magnetic TI is predicted to host the chiral edge state (CES) of dissipation-less nature when each magnetic domain is in the quantum anomalous Hall state. We design and fabricate the magnetic domains in a magnetic TI film with the tip of the magnetic force microscope, and clearly prove the existence of the chiral one-dimensional edge conduction along the prescribed DWs. The proof-of-concept devices based on the reconfigurable CES and Landauer-Buttiker formalism are exemplified for multiple-domain configurations with the well-defined DW channels., Comment: 11 pages, 4 figures

Interactions between the constituents of a condensed matter system can drive it through a plethora of different phases due to many-body effects. A prominent platform for this type of behavior is a two-dimensional electron system in a magnetic field, which evolves intricately through various gaseous, liquid and solids phases governed by Coulomb interaction. Here we report on the experimental observation of a phase transition between the Laughlin liquid of composite fermions and the adjacent insulating phase of a magnetic field-induced Wigner solid. The experiments are performed in the lowest Landau level of a MgZnO/ZnO two-dimensional electron system with attributes of both a liquid and a solid. An in-plane magnetic field component applied on top of the perpendicular magnetic field extends the Wigner phase further into the liquid phase region. Our observations indicate the direct competition between a Wigner solid and a Laughlin liquid both formed by composite particles rather than bare electrons., Comment: 11 pages, 4 figures, Supplementary Information available upon request

We report on nonlinear magnetotransport in a two-dimensional electron gas hosted in a MgZnO/ZnO heterostructure. Upon application of a direct current, we observe pronounced Hall field-induced resistance oscillations (HIRO) which are well known from experiments on high-mobility GaAs/AlGaAs quantum wells. The unique sensitivity of HIRO to the short-range component of the disorder potential allows us to unambiguously establish that the mobility of our MgZnO/ZnO heterostructure is limited by impurities residing within or near the 2D channel. Demonstration that HIRO can be realized in a system with a much lower mobility, much higher density, and much larger effective mass than in previously studied systems, highlights remarkable universality of the phenomenon and its great promise to be used in studies of a wide variety of emerging 2D materials.

Precise estimation of spin Hall angle as well as successful maximization of spin-orbit torque (SOT) form a basis of electronic control of magnetic properties with spintronic functionality. Until now, current-nonlinear Hall effect, or second harmonic Hall voltage has been utilized as one of the methods for estimating spin Hall angle, which is attributed to the magnetization oscillation by SOT. Here, we argue the second harmonic Hall voltage in magnetic/nonmagnetic topological insulator (TI) heterostructures, Cr$_x$(Bi$_{1-y}$Sb$_y$)$_{2-x}$Te$_3$/(Bi$_{1-y}$Sb$_y$)$_2$Te$_3$. From the angular, temperature and magnetic field dependence, it is unambiguously shown that the large second harmonic Hall voltage in TI heterostructures is governed not by SOT but mainly by asymmetric magnon scattering mechanism without magnetization oscillation. Thus, this method does not allow an accurate estimation of spin Hall angle when magnons largely contribute to electron scattering. Instead, the SOT contribution in a TI heterostructure is exemplified by current pulse induced non-volatile magnetization switching, which is realized with a current density of $\sim 2.5 \times 10^{10} \mathrm{A/m}^2$, showing its potential as spintronic materials., Comment: 22 pages, 4 figures

We employ time-resolved resonant x-ray diffraction to study the melting of charge order and the associated insulator-metal transition in the doped manganite Pr$_{0.5}$Ca$_{0.5}$MnO$_3$ after resonant excitation of a high-frequency infrared-active lattice mode. We find that the charge order reduces promptly and highly nonlinearly as function of excitation fluence. Density functional theory calculations suggest that direct anharmonic coupling between the excited lattice mode and the electronic structure drive these dynamics, highlighting a new avenue of nonlinear phonon control.

We report current-direction dependent or unidirectional magnetoresistance (UMR) in magnetic/nonmagnetic topological insulator (TI) heterostructures, Cr$_x$(Bi$_{1-y}$Sb$_y$)$_{2-x}$Te$_3$/(Bi$_{1-y}$Sb$_y$)$_2$Te$_3$, that is several orders of magnitude larger than in other reported systems. From the magnetic field and temperature dependence, the UMR is identified to originate from the asymmetric scattering of electrons by magnons. In particular, the large magnitude of UMR is an outcome of spin-momentum locking and a small Fermi wavenumber at the surface of TI. In fact, the UMR is maximized around the Dirac point with the minimal Fermi wavenumber.

Electron transport coupled with magnetism has attracted attention over the years as exemplified in anomalous Hall effect due to a Berry phase in momentum space. Another type of unconventional Hall effect -- topological Hall effect, originating from the real-space Berry phase, has recently become of great importance in the context of magnetic skyrmions. We have observed topological Hall effect in bilayers consisting of ferromagnetic SrRuO$_3$ and paramagnetic SrIrO$_3$ over a wide region of both temperature and magnetic field. The topological term rapidly decreases with the thickness of SrRuO$_3$, ending up with the complete disappearance at 7 unit cells of SrRuO$_3$. Combined with model calculation, we concluded that the topological Hall effect is driven by interface Dzyaloshinskii-Moriya interaction, which is caused by both the broken inversion symmetry and the strong spin-orbit coupling of SrIrO$_3$. Such interaction is expected to realize the N\'{e}el-type magnetic skyrmion, of which size is estimated to be $\sim$10 nm from the magnitude of topological Hall resistivity. The results established that the high-quality oxide interface enables us to tune the chirality of the system; this can be a step towards the future topological electronics., Comment: 18 pages, 3 figures; revised version has been published in Sci. Adv. 2, e1600304 (2016)