148 results on '"Kawada, Hiroki"'
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2. Putrescine Production by Latilactobacillus curvatus KP 3-4 Isolated from Fermented Foods
3. A discussion on how to define the tolerance for line-edge or linewidth roughness and its measurement methodology
4. Single-shot method for bias-free LER/LWR evaluation with little damage
5. Proposal of accelerometer using zero-compliance mechanism
6. LER and LWR measurements used for monitoring wiggling and stochastic-failure (Conference Presentation)
7. Linewidth and roughness measurement of SAOP by using FIB and Planer-TEM as reference metrology
8. Activation of marginally reactive boron enolates by MeLi for the formation of enol phosphates and synthesis of the D9-THC intermediate
9. Linewidth roughness of advanced semiconductor features using focused ion beam and planar-transmission electron microscope as reference metrology
10. Measurement of pattern roughness and local size variation using CD-SEM
11. Force Measurement Using Zero-Compliance Mechanism
12. Line-width roughness of advanced semiconductor features by using FIB and planar-TEM as reference metrology
13. How to measure a-few-nanometer-small LER occurring in EUV lithography processed feature
14. A new way of measuring wiggling pattern in SADP for 3D NAND technology
15. Measurement of pattern roughness and local size variation using CD-SEM: current status
16. 3D-profile measurement of advanced semiconductor features by using FIB as reference metrology
17. Development of accelerometer with Zero-Compliance Mechanism ( 1st report ) Principle of Measurement
18. Synthesis of (−)-Piperitylmagnolol Featuring ortho-Selective Deiodination and Pd-Catalyzed Allylation
19. 3D-profile measurement of advanced semiconductor features by reference metrology
20. Process monitor of 3D-device features by using FIB and CD-SEM
21. 2C31 Computer analysis based on pathological observations of head injury
22. ChemInform Abstract: Activation of Marginally Reactive Boron Enolates by MeLi for the Formation of Enol Phosphates and Synthesis of the Δ9-THC Intermediate.
23. Linewidth and roughness measurement of SAOP by using FIB and Planer-TEM as reference metrology
24. Activation of Marginally Reactive Boron Enolates by MeLi for the Formation of Enol Phosphates and Synthesis of the Δ9-THC Intermediate
25. Photoresist cross-sectional shape change caused by scanning electron microscope-induced shrinkage
26. Line profile measurement of advanced-FinFET features by reference metrology
27. Device-correlated metrology for overlay measurements
28. Correction of EB-induced shrinkage in contour measurements
29. Sidewall roughness and line profile measurement of photoresist and finFET features by cross-section STEM and TEM image for reference metrology
30. J0250104 Study of material properties of the head simulation model
31. A new way of measuring wiggling pattern in SADP for 3D NAND technology
32. Measurement of pattern roughness and local size variation using CD-SEM: current status
33. Line-width roughness of advanced semiconductor features by using FIB and planar-TEM as reference metrology
34. Precise Cross-Sectional Measurement of Photoresist Shrinkage Caused by Electron Beam Irradiation
35. Three-dimensional profile extraction from CD-SEM image and top/bottom CD measurement by line-edge roughness analysis
36. Precise measurement of photoresist cross-sectional shape change caused by SEM-induced shrinkage
37. Key points to measure accurately an ultra-low LER by using CD-SEM
38. DCM: device correlated metrology for overlay measurements
39. Edge determination methodology for cross-section STEM image of photoresist feature used for reference metrology
40. In-die overlay metrology by using CD-SEM
41. Sub-nanometer calibration of line width measurement and line edge detection by using STEM and sectional SEM
42. Compensation of CD-SEM image-distortion detected by View-Shift Method
43. Hybrid metrology solution for 1X node technology
44. Mechanism of photoresist shrinkage investigated by single-line scan of electron beam
45. 3D-profile measurement of advanced semiconductor features by using FIB as reference metrology
46. 25 nm pitch comparison between a traceable x-ray diffractometer and a metrological atomic force microscope
47. Sub-nanometer line width and line profile measurement for CD-SEM calibration by using STEM
48. CD-SEM image-distortion measured by view-shift method
49. Novel CD-SEM magnification calibration reference of sub-50-nm pitch multi-layer grating with positional identification mark
50. Evaluation of 25-nm pitch SiO 2 /Si multilayer grating reference using CD-SEM
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