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The PVDF/BST thick films were synthesized using a solution casting method. The introduction of BST into the PVDF matrix increased the dielectric constant (ε′) of the thick films. Subsequently, the pristine PVDF films and the PVDF/BST thick films underwent radiation with a 662 keV Cs1+ ion beam. Following radiation, changes were observed in the materials and their dielectric properties were studied. PVDF underwent recrystallization process accompanied by a phase shift from the α to β state. Consequently, the ε′ increased for all the PVDF-BST thick films after exposure to 662 keV Cs1+ ions, while the tangent loss also increased with increased loading of the BST filler. Notably, it is intriguing to observe that the 662 keV Cs1+ ion radiation led to a reduction in the dielectric constant, likely due to a cross-linking effect within the PVDF/BST thick films. [ABSTRACT FROM AUTHOR]