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Direct measurements of carrier diffusion in GaN nanorods with a designed InGaN/GaN layer-in-a-wire structure by scanning near-field optical microscopy (SNOM) were performed at liquid-helium temperatures of 10 K. Without an applied voltage, intrinsic diffusion lengths of photo-excited carriers were measured as the diameters of the nanorods differ from 50 to 800 nm. The critical diameter of nanorods for carrier diffusion is concluded as 170 nm with a statistical approach. Photoluminescence spectra were acquired for different positions of the SNOM tip on the nanorod, corresponding to the origins of the well-defined luminescence peaks, each being related to recombination-centers. The phenomenon originated from surface oxide by direct comparison of two nanorods with similar diameters in a single map has been observed and investigated. Funding Agencies|Knut and Alice Wallenberg Foundation

Optical characterization of single quantum dots (QDs) by means of micro-photoluminescence (μPL) will be reviewed. Both QDs formed in the Stranski–Krastanov mode as well as dots in the apex of pyramidal structures will be presented. For InGaAs/GaAs dots, several excitonic features with different charge states will be demonstrated. By varying the magnitude of an external electric or magnetic field and/or the temperature, it has been demonstrated that the transportation of carriers is affected and accordingly the charge state of a single QD can be tuned. In addition, we have shown that the charge state of the QD can be controlled also by pure optical means, i.e. by altering the photo excitation conditions. Based on the experience of the developed InAs/GaAs QD system, similar methods have been applied on the InGaN/GaN QD system. The coupling of LO phonons to the QD emission is experimentally examined for both charged and neutral excitons in single InGaAs/GaAs QDs in the apex of pyramidal structures. It is shown that the positively charged exciton exhibits a significantly weaker LO phonon coupling in the μPL spectra than the neutral and negatively charged species, a fact, which is in consistency with model simulations performed.

A low-temperature micro-photoluminescence (μ-PL) investigation of InAs/GaAs quantum dots (QDs) exposed to a lateral external electric field is reported. It is demonstrated that the QDs PL signal could be increased several times by altering the external and/or the internal electric field. The internal field in the vicinity of the dots could be altered by means of an additional infra-red laser. We propose a model, which is based on an essentially faster lateral transport of the charge carriers achieved in an external electric field. Consequently, also the capture probability into the dots and subsequently the dot luminescence is also enhanced. The results obtained suggest that the lateral electric fields play a major role for the dot luminescence intensity measured in our experiment.

We report on low-temperature microphotoluminescence (μ-PL) measurements of InAs/GaAs quantum dots (QDs) exposed to a lateral external electric field. It is demonstrated that the QDs’ PL signal could be increased severalfold by altering the external and/or the internal electric field, which could be changed by an additional infrared laser. A model which accounts for a substantially faster lateral transport of the photoexcited carriers achieved in an external electric field is employed to explain the observed effects. The results obtained suggest that the lateral electric fields play a major role for the dot luminescence intensity measured in our experiment—a finding which could be used to tailor the properties of QD-based optoelectronic applications.

7 páginas, 5 figuras.-- PACS numbers: 78.67.Hc, 71.55.Eq, 73.50.Gr, It is demonstrated that the microphotoluminescence (μPL) spectrum of a single InAs/GaAs self-assembled quantum dot (QD) undergoes considerable changes when the primary laser excitation is complemented with an additional infrared laser. The primary laser, tuned slightly below the GaAs band gap, provides electron-hole pairs in the wetting layer (WL), as well as excess free electrons from ionized shallow acceptors in the GaAs barriers. An additional IR laser with a fixed energy well below the QD ground state transition generates excess free holes from deep levels in GaAs. The excess electron and hole will experience diffusion separately, due to the time separation between the two events of their generation, to eventually become captured into the QD. Although the generation rates of excess carries are much lower than that of the electron-hole pair generation in the WL, they considerably influence the QD emission at low temperatures. The integrated PL intensity increases by several times as compared to single-laser excitation, and the QD exciton spectrum is redistributed in favor of a more neutral charge configuration. The dependence of the observed phenomenon on the powers of the two lasers and the temperature has been studied and is consistent with the model proposed. The concept of dual excitation could be successfully applied to different low-dimensional semiconductor structures in order to manipulate their charge state and emission intensity., This work was supported by grants from the Swedish Foundation for Strategic Research (SSR) and Swedish Research Council (VR). Financial support from the Wenner-Gren Foundation and the program “Low- Dimensional Quantum Structures” of the Russian Academy of Sciences is acknowledged by E.S.M. V.D. is thankful for financial support from the Swedish Foundation for International Cooperation in Research and Higher Education (STINT) and from the Bulgarian National Science Fund.

We report on the studies of linearly polarized photoluminescence (PL) in a (0001) oriented ZnO epitaxial film, grown by metal organic chemical vapor deposition on a GaN template. The emission of mixed longitudinal-transverse exciton polariton modes was observed up to 130 K that evidences polaritonic nature of the excitonic spectrum up to this elevated temperature.

Presented at: 5th International Conference on Nitride Semiconductors (ICNS-5), Nara, Japan, 25-30 May, 2003

The linear polarization of the excitonic emission from quantum dot-like potential minima formed in a thin InGaN layer is investigated. The recorded emission lines exhibit significant intensity linearly polarized along the wurtize c-axis. For many of the studied spectra, the excitonic fine-structures were resolved, revealing energy splittings in the order of ∼200 μeV.

Reference LPN-ARTICLE-2002-006doi:10.1016/S1386-9477(02)00225-4View record in Web of Science Record created on 2008-02-29, modified on 2017-05-12

Indium segregation in a narrow InGaN single quantum well creates quantum dot (QD) like exciton localization centers. Cross-section transmission electron microscopy reveals varying shapes and lateral sizes in the range ∼1-5 nm of the QD-like features, while scanning near field optical microscopy demonstrates a highly inhomogeneous spatial distribution of optically active individual localization centers. Microphotoluminescence spectroscopy confirms the spectrally inhomogeneous distribution of localization centers, in which the exciton and the biexciton related emissions from single centers of varying geometry could be identified by means of excitation power dependencies. Interestingly, the biexciton binding energy (E(b)xx) was found to vary from center to center, between 3 to -22 meV, in correlation with the exciton emission energy. Negative binding energies are only justified by a three-dimensional quantum confinement, which confirms QD-like properties of the localization centers. The observed energy correlation is proposed to be understood as variations of the lateral extension of the confinement potential, which would yield smaller values of E(b)xx for reduced lateral extension and higher exciton emission energy. The proposed relation between lateral extension and E(b)xx is further supported by the exciton and the biexciton recombination lifetimes of a single QD, which suggest a lateral extension of merely ∼3 nm for a QD with strongly negative E(b)xx = -15.5 meV.

We review the research done in recent years in our group on the effects of nanostructure symmetry, and outline its relevance both for nanostructure physics and for computations of their electronic and optical properties. The exemples of C3v and C2v quantum dots are used. A number of surprises and non-trivial aspects are outlined, and a few symmetry-based tools for computing and analysis are shortly presented.

It is demonstrated that the photoluminescence spectra of single self-assembled quantum dots are very sensitive to the experimental conditions, such as excitation energy and crystal temperature. A q ...

In this experimental study of single InGaAs/GaAs quantum dots (QDs) the photoluminescence intensity of the second order LO-phonon replica of the excitonic interband recombination was measured along with the intensities of the first and zeroth orders. The results show that the intensity of the second-order replica is three to four times stronger than expected from the adiabatic Huang-Rhys theory, indicating that the neglected nonadiabaticity plays an important role for the understanding of the exciton-phonon coupling in QDs. Funding Agencies|Science Foundation Ireland|05/IN.1/I2510/IN.1/I3000|Swedish Research Council (VR)||K. A. Wallenberg Foundation||Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU)|2009-00971

In this thesis two very similar processes have been studied, both involving excitations of particles during recombination of exciton complexes in quantum dots, reducing the energy of the emitted photon. Different exciton complexes are defined according to the number of electrons and holes in the quantum dot upon recombination. The neutral exciton complexes with one electron and one hole (X) and two electrons and two holes (2X) respectively are referred to as the exciton and the biexciton. Accordingly the charged exciton complexes consisting of two electrons and one hole (X−) and one electron and two holes (X+), respectively, are referred to as negatively and positively charged excitons, respectively. Whenever another particle is excited during the recombination of one electron-hole pair within these complexes, the result is a weak satellite peak, spectrally redshifted with respect to the main emission peak related to the exciton complex.In the first part of this thesis, described in papers 1 - 3, the first and second order exciton-LO-phonon interaction is studied with weak satellite peaks, redshifted by the LOphonon energy (ћωLO or 2ћωLO), as the signature, referred to as phonon replicas. The intensity ratio between the first order replicas and the corresponding main emission were determined from the obtained micro-photoluminescence spectra. It was found that this ratio was significantly weaker for the positively charged exciton X+ compared to the neutral exciton, X, and the negatively charged exciton, X−. This experimentally obtained result was further supported by computations. Interestingly, the computations revealed that despite that X+ displays the weakest phonon replica among the investigated complexes, it possesses the strongest Frohlich coupling to phonons in the lattice before recombination. The spectral broadening of the phonon replicas compared to the main emission is also discussed. The origin of the exciton-LO-phonon coupling is concluded to be from within the quantum dot (QD) itself, based on a comparison between quantum dots with different barriers. In addition, the measured intensity of the second order LO-phonon replica was approximately three times stronger than predictions made with the adiabatic Huang-Rhys theory but much weaker than the two orders in magnitude enhancement that was predicted when non adiabatic effects was included.Symmetrical QDs are a requirement for achieving entangled photon emission, desired for applications within quantum cryptography. In the fourth paper we relate the emission pattern of the doubly positively charged exciton X2+ to the symmetry of the QDs. In particular the splitting between the two low-energy components was found to be a measure of the asymmetry of the QDs. The emission pattern of the doubly charged exciton may then be used as a post-growth uninvasive selection tool were high-symmetry QDs could reliably be selected.In the last paper an additional weak redshifted satellite peak in the recombination spectra is studied. The intensity of this weak satellite peak is correlated to the peak intensity of the positively charged exciton, X+, main emission peak. In addition to this photoluminescence excitation experiments and computations further support our interpretation that the satellite peak is related to the shake-up of the ground state hole in the QD that is not involved in the optical recombination. This hole is excited by Coulomb interaction to an excited state yielding a photon energy that has been reduced with the difference between the ground state and the excited state of the spectator hole.

Hexagonal GaN pyramids have been fabricated by hot-wall metal organic chemical vapor deposition (hot-wall MOCVD) and the growth evolution have been studied. It was concluded that the pyramid growth can be divided into two regimes separated by the adsorption kinetics of the {1101} surfaces of the pyramids. In the adsorption regime, the pyramids grow simultaneously in the and [0001] -directions. In the zero-adsorption regime the pyramids grow only in the [0001] direction. Thus the pyramid growth ceases when the (0001) facet growth has been terminated. Large arrays consisting of highly uniform pyramids with apex radii of 3 nm or less were achieved in the zeroadsorption regime. The growth-regime type was concluded to have a large impact on the uniformity degradation of the pyramids, and their optical properties. The impacts of threading dislocations which enter the pyramid from underneath are also discussed.

InAs quantum dots (QDs) at different levels of density have been studied by means of photoluminescence, when in addition to the main laser, a second infrared (IR) laser is employed to excite the QD. It is demonstrated that the IR laser considerably affects the QD charge state as well as the emission intensity level (an increase greater than fivefold was observed). These effects are explained in terms of separate generation of excess electrons and holes provided under dual-laser excitation. However, these effects progressively vanish with increasing QD density. The results obtained unambiguously imply that the emission intensity from the QD can be effectively enhanced by purely optical means.

We report a micro-photoluminescence study on the influence of single and multi-quantum dots (QDs) on the exposure by a low-energy laser, in addition to the principal exciting laser. At low temperatures, the presence of the low-energy laser effectively quenches the single QD luminescence. This can be explained in terms of an induced screening of a built-in electric field, which plays an important role as a carrier capture mechanism. The influence of the low-energy laser is successively decreasing when the capture efficiency is increased either by elevated crystal temperature or by increased QD densities, full consistent with the proposed model.

The dynamics of the exciton and the biexciton related emission from a single InGaN quantum dot (QD) have been measured by time-resolved microphotoluminescence spectroscopy. An exciton-biexciton pair of the same QD was identified by the combination of power dependence and polarization-resolved spectroscopy. Moreover, the spectral temperature evolution was utilized in order to distinguish the biexciton from a trion. Both the exciton and the biexciton related emission reveal mono-exponential decays corresponding to time constants of similar to 900 and similar to 500 ps, respectively. The obtained lifetime ratio of similar to 1.8 indicates that the QD is small, with a size comparable to the exciton Bohr radius. Funding Agencies|Thaksin University in Thailand||Swedish Research Council (VR)||Swedish Foundation for Strategic Research (SSF)||Knut and Alice Wallenberg Foundation

The optical linear polarization properties of exciton complexes in asymmetric Stranski-Krastanov grown GaN quantum dots have been investigated experimentally and theoretically. It is demonstrated that the polarization angle and the polarization degree can be conveniently employed to associate emission lines in the recorded photoluminescence spectra to a specific dot. The experimental results are in agreement with configuration interaction computations, which predict similar polarization degrees for the exciton and the biexciton (within 10%) in typical GaN quantum dots. The theory further predicts that the polarization degree can provide information about the charge state of the dot. funding agencies|Thaksin University in Thailand||Swedish Research Council (VR)||Swedish Foundation for Strategic Research (SSF)||Knut and Alice Wallenberg Foundation

The fine-structure splitting of quantum confined InxGa1-x Nexcitons is investigated using polarization-sensitive photoluminescence spectroscopy. The majority of the studied emission lines exhibits ...

A systematic and simple theoretical approach is proposed to analyze true degeneracies and polarized decay patterns of exciton complexes in semiconductor quantum dots. The results provide reliable spectral signatures for efficient symmetry characterization, and predict original features for low C(2 nu) and high C(3 nu) symmetries. Excellent agreement with single quantum dot spectroscopy of real pyramidal InGaAs/AlGaAs quantum dots grown along [111] is demonstrated. The high sensitivity of biexciton quantum states to exact high symmetry can be turned into an efficient uninvasive postgrowth selection procedure for quantum entanglement applications.

Single GaN/Al(Ga)N quantum dots (QDs) have been investigated by means of microphotoluminescence. Emission spectra related to excitons and biexcitons have been identified by excitation power dependence and polarization resolved spectroscopy. All investigated dots exhibit a strong degree of linear polarization (∼90%). The biexciton binding energy scales with the dot size. However, both positive and negative binding energies are found for the studied QDs. These results imply that careful size control of III-Nitride QDs would enable the emission of correlated photons with identical frequencies from the cascade recombination of the biexciton, with potential applications in the area of quantum information processing. funding agencies|Thaksin University in Thailand||Swedish Research Council (VR)||Swedish Foundation for Strategic Research (SSF)||Knut and Alice Wallenberg Foundation

3 páginas, 2 figuras., It is demonstrated that the photoluminescence spectra of single self-assembled InAs/GaAs quantum dots are very sensitive to excitation energy and crystal temperature. This is qualitatively explained in terms of the effective diffusivity of photogenerated particles, which affects the capture probability of the quantum dot. As a consequence, this opens the possibility of controlling the average number of excess electrons in the quantum dot by optical means. This technique may be used as a simple tool to create and study charged exciton complexes without any specially fabricated samples., One of the authors (E.S.M.) gratefully acknowledges the financial support of the Swedish Institute within the Visby Programme.

The longitudinal-optical (LO)-phonon coupling is experimentally examined by the optical decay of various charged and neutral exciton species in single quantum dots, and the related Huang-Rhys parameters are extracted. A positive trion exhibits significantly weaker LO-phonon replicas in the photoluminescence spectrum than the neutral and negatively charged species. Model computations show that the strength of the replicas is determined by the Coulomb interactions between electrons and holes, which modify the localization of the envelope wave functions and the net charge distribution. Original Publication: Daniel Dufåker, Fredrik Karlsson, V Dimastrodonato, L O Mereni, Bo Sernelius, Per-Olof Holtz and E Pelucchi, Phonon replicas of charged and neutral exciton complexes in single quantum dots, 2010, PHYSICAL REVIEW B, (82), 20, 205421. http://dx.doi.org/10.1103/PhysRevB.82.205421 Copyright: American Physical Society http://www.aps.org/

A thorough investigation of quantum-dots-in-a-well structures for infrared photodetector applications has been performed employing different experimental techniques. The electronic structure of self-assembled InAs quantum dots embedded in an In0.15Ga0.85As/GaAs quantum well (QW) was deduced from photoluminescence (PL) and PL excitation (PLE) spectroscopy. From polarization-dependent PL it was revealed that the quantum dots hold two electron energy levels and two heavy-hole levels. Tunnel capacitance spectroscopy confirmed an electron energy level separation of about 50 meV, and additionally, that the conduction-band ground state and excited state of the dots are twofold and fourfold degenerates, respectively. Intersubband photocurrent spectroscopy, combined with simultaneous interband pumping of the dots, revealed a dominant transition at 150 meV (8.5 mu m) between the ground state of the quantum dots and the excited state of the QW. Results from detailed full three-dimensional calculations of the electronic structure, including effects of composition intermixing and interdot interactions, confirm the experimentally unravelled energy level scheme of the dots and well.

Quantum dots (QDs) of high symmetry (e.g., C-3 nu) have degenerate bright exciton states, unlike QDs of C-2 nu symmetry, making them intrinsically suitable for the generation of entangled photon pairs. Deviations from C-3 nu symmetry are detected in real QDs by polarization-resolved photoluminescence spectroscopy in side-view geometry of InGaAs/AlGaAs dots formed in tetrahedral pyramids. The theoretical analysis reveals both an additional symmetry plane and weak symmetry breaking, as well as the interplay with electron-hole and hole-hole exchange interactions manifested by the excitonic fine structure. Original Publication:Fredrik Karlsson, M A Dupertuis, D Y Oberli, E Pelucchi, A Rudra, Per-Olof Holtz and E Kapon, Fine structure of exciton complexes in high-symmetry quantum dots: Effects of symmetry breaking and symmetry elevation, 2010, PHYSICAL REVIEW B, (81), 16, 161307.http://dx.doi.org/10.1103/PhysRevB.81.161307Copyright: American Physical Societyhttp://www.aps.org/

Site-controlled quantum-wire photonic-crystal microcavity laser is experimentally demonstrated using optical pumping. The single-mode lasing and threshold are established based on the transient laser response, linewidth narrowing, and the details of the non-linear power input-output charateristics. Average-power threshold as low as similar to 240 nW (absorbed power) and spontaneous emission coupling coefficient beta similar to 0.3 are derived. (C) 2009 Optical Society of America

Three-dimensional (3D) quantum confinement in semiconductor quantum dots (QDs) implies valence band mixing, which in turns determines the polarization properties of the emitted photons. However, the valence band structure in QDs has been investigated so far mostly in self-assembled strained dots, in which heavy- and light-hole mixing is weak and the confinement geometry is fixed to a large extent. Here we propose novel schemes for engineering and switching the hole-character and the polarization of the emitted photons in pyramidal QD heterostructures. Valence-band engineering and deterministic control of the hole-character in quantum nanostructures self-formed in inverted pyramids have been reported, both for GaAs/AlGaAs Dot-in-Dot (DiDs) [1] and for AlGaAs Quantum-Dot Molecules (QDMs) [2]. Side-view polarization-resolved photoluminescence spectra clearly demonstrated the switching of the ground state character from light-hole (LH) to heavy-hole (HH) as the geometrical configuration is changed [1]. Here, we propose and theoretically demonstrate dynamic switching of hole-character and polarization induced by applying an electric field on pyramidal DiDs and QDMs (Figs. 1 and 2). Our studies show that it is possible to separately confine the electron state and the hole states such that the holes are confined in thinner low-potential regions, and are hence predominantly of heavy hole character. The electric fields required for such switching are calculated for a variety of DiD and QDM configurations, showing that realistic values of less than 105 V/cm are sufficient for inducing the switching. The fabrication of such structures will be discussed. Such dynamic switching of photon polarization is interesting for various QD emitters such as lasers and single photon sources.

Control on the degree of valence band mixing is experimentally achieved in the particular GaAs/AlGaAs quantum Dot-in-Dot (DiD) structure. The effect is reflected by the tunable polarization of the emitted photons.

Splitting of mode wavelength and loss are observed in coupled photonic-crystal cavities. The characteristics of loss splitting are shown to have important impact on the optical energy transfer between such coupled resonators.

The authors demonstrate the deterministic coupling between a single, site-controlled InGaAs/GaAs pyramidal quantum dot (QD) and a photonic crystal membrane cavity defect. The growth of self-ordered pyramidal QDs in small (300 nm base side) tetrahedral recesses etched on (111)B GaAs substrates was developed in order to allow their integration within the thin GaAs membranes. Accurate (better than 50 nm) positioning of the QD with respect to the optical cavity mode is achieved reproducibly owing to the site control. Coupling of the dot emission with the cavity mode is evidenced in photoluminescence measurements. The deterministic positioning of the pyramidal QDs and the control of their emission spectrum opens the way for devices based on QDs integrated with coupled nanocavities. (c) 2008 American Institute of Physics.

We report the photoluminescence (PL) and polarization-resolved PL characteristics of a novel GaAs/AlGaAs quantum wire/dot semiconductor system, realized by metalorganic vapor-phase epitaxy of site-controlled, self-assembled nanostructures in inverted tetrahedral pyramids. By systematically changing the length of the quantum wires, we implement a continuous transition between the regimes of two-dimensional and three-dimensional quantum confinement. The two main evidences for this transition are observed experimentally and confirmed theoretically: (i) strongly blue-shifted ground-state emission, accompanied by increase separation of ground and excited transition energies; and (ii) change in the orientation of the main axis of linear polarization of the photoluminescence, from parallel to perpendicular with respect to the wire axis. This latter effect, whose origin is shown to be purely due to quantum confinement and valence band mixing, sets in at wire lengths of only approximately 30 nm.

Single quantum dots (QDs), based on the InAs/GaAs material system have been characterized by micro-photoluminescence (μPL). The self-organized quantum dots studied are fabricated by the Stransky-Krastanov method, taking advantage of the strain caused by the lattice mismatch between InAs and GaAs. Well-defined narrow excitonic features from individual QDs are monitored in the μPL spectra, upon single or dual tunable laser excitation. The charge state of the quantum dot is revealed from these excitonic lines in the μPL spectra. However, by tuning the laser excitation energy, it is demonstrated that the charge state of the dot can be altered: The distribution of neutral and charged excitons is demonstrated to be extremely sensitive on the laser energy. In addition, with an additional infrared laser, striking changes are induced in the μPL spectra. The results achieved demonstrate the existence of two well-defined excitation energy regions for the main laser, in which the presence of the infrared laser will decrease or increase, respectively, the integrated dot μPL intensity. For excitation above the critical threshold energy of the main laser, the addition of the infrared laser will induce a considerable increase, by up to a factor 5, in the QD emission intensity. At laser excitation below the threshold energy, on the other hand, the QD emission intensity will decrease. This fact is due to reduced carrier capture efficiency into the dot as determined by the internal electric field driven carrier transport. In order to get further insight into the carrier capture process due to the electric field in the vicinity of the QD, the dots have also been subjected to an external electric field In most optical experiments with QDs, electrically injected or photoexcited carriers are primarily created somewhere in the sample outside the QDs, e.g. in the barriers or in the wetting layer. Consequently, excited carriers undergo a transport in the wetting layer and/or barriers prior to the capture into the QDs. This circumstance highlights the crucial role of the carrier transport and capture processes into the dot for the performance and operation of the dot based devices such as QD lasers, QD infrared detectors and QD memory devices. This transport effect on the optical response of the quantum dots has been investigated by subjecting the carriers to an external electric field in μPL measurements. This external field is formed by application of a lateral field between two top contacts. It is demonstrated that the QD PL signal intensity could be increased several times (>5 times) by optimizing the magnitude of this external field.

Carrier transfer between two asymmetric weakly coupled GaAs quantum wires separated by AlGaAs barriers ranging from 5.5 nm to 20 nm thickness are studied by photoluminescence and photoluminescence excitation spectroscopy . The chosen range includes both the regime dominated by conventional tunneling and the regime where tunneling is negligible. In contrast to the studied reference quantum wells, the charge transfer between the quantum wires can be fully explained by conventional tunneling via LO‐phonon emission.

Dual‐laser excitation spectroscopy is performed on single quantum dots (QDs). Under excitation of a main laser with an energy above the wetting layer band gap, it is demonstrated that the QD luminescence is highly sensitive to exposure of infrared light with a photon energy well below the QD bandgap. Depending on the main laser energy, the infrared light induces either strong enhancement or quenching of the QD luminescence. The effects are explained in terms of separate electron and hole generation by the two lasers, and the presence of an electric field in the QD vicinity.

A fractional dimensional approach is applied to a realistic V‐groove quantum wire in order to calculate the excitonic absorption spectrum. An excellent agreement is obtained with much more computationally demanding models as well as with experimental photoluminescence excitation data. However, comparison with a full excitonic calculation reveal situations were the concept of fractional dimensions to some extent fails.

A fractional-dimensional approach is applied to a realistic V-groove quantum wire in order to calculate the excitonic absorption spectrum. An excellent agreement is obtained with much more computationally demanding models as well as with experimental photoluminescence excitation data. However, comparison with a full excitonic calculation reveals situations were the concept of fractional dimensions to some extent fails.

We have studied systems of asymmetric coupled GaAs V-groove quantum wires p-i-n diodes, in which the electrons and holes are injected into different wires. Despite the use of a 7 nm thick AlGaAs tunnel barrier, and although we demonstrate that holes tunnel more slowly than electrons, we observe a very efficient and fast tunneling between the quantum wires (QWR's). We attribute this to the achievement of a resonance between hole levels in the two QWR's. Photoluminescence excitation experiments are compared with accurate calculations of the excitonic absorption yielding a level of carrier transfer of nearly 100%. Temperature-dependent electroluminescence exhibits clear effects of tunneling up to room temperature but cannot distinguish separate electron/hole tunneling from exciton tunneling.

The polarized photoluminescence (PL) in a (0001) oriented ZnO epitaxial film is studied in the temperature range 4.5-250 K. We report the evidence of exciton polariton emission between 50 and 130 K ...

4 páginas, 2 figuras.-- PACS 71.55.Eq, 73.50.Gr, 78.55.Cr, 78.67.Hc, The temperature evolution of the micro-photoluminescence (PL) spectra of a single InAs/GaAs quantum dot is studied from 5 to 65 K for different excitation energies. For excitation energies within the shallow acceptor absorption region below the GaAs bandgap a strong increase of the PL intensity (more than 10 times) is observed at 45 K with respect to 5 K. Besides, with increasing the temperature the PL spectrum redistributes in favour of a more neutral exciton configuration, contrary to the tendency observed when exciting outside this region. The results are explained in terms of separate optical generation of excess electrons and thermal generation of excess holes via the shallow acceptor levels in the GaAs barriers, resulting in an efficient carrier diffusion in the wetting layer and capture into the quantum dot., Financial support from the Wenner-Gren Foundation and the Russian Academy of Sciences is acknowledged by E.S.M and from the Swedish Foundation for International Cooperation in Research and Higher Education (STINT) by V.D.

The excitonic photoluminescence spectra reveal an abrupt change of the charge-state of single In(Ga)As/GaAs quantum dots, for a certain transformation when the excitation energy below the barrier band gap. This transform energy is dependent on the thickness of the underlying wetting layer and the crucial energy is associated with an optical transition involving an energy level of the wetting layer. The effect is proposed to be used as a tool, not only to monitor charge in quantum dots in order to study related phenomena, but also to gain new insight in the electronic structure of strained In(Ga)As/GaAs layers by using the quantum dots as charge-probes.

We have succeeded to achieve highly efficient, narrow linewidth electroluminescence (EL) at room temperature from strained InGaAs quantum wire (QWR) light-emitting diodes (LEDs). The internal quantum efficiency is estimated to be as high as 60% for a single layer, 500-nm-pitch V-groove In/sub 0.15/Ga/sub 0.85/As QWR array LED, emitting at 1.29 eV (/spl lambda/ = 960 nm) with a linewidth as narrow as 14 meV. The high efficiency is achieved with the aid of selective carrier injection directly into the QWRs through self-ordered AlGaAs vertical quantum wells (VQWs), where the VQWs were separated from the InGaAs QWRs by thin GaAs spacer layers in order to reduce nonradiative recombination and inhomogeneous alloy broadening.

Microphotoluminescence studies reveal strong and narrow lines of similar to1-meV minimal width in GaN/AlxGa1-xN quantum well (QW) structures having inversion domains (IDs). These narrow lines coexi ...

2 páginas, 3 figuras., Pure photoluminescence spectra originating from a single InAs/GaAs quantum dot, which is small enough to possess only one single-electron level, are demonstrated. A symmetric fine structure of the exciton and the biexciton is observed.

We propose inversion domains (IDs) to be the origin of the 3.42 eV photoluminescence (PL) band in GaN epilayers and nanocolumns. A shift of the band relatively to the near-edge PL band is induced presumably by different strain in the IDs. Micro-PL studies of nanocolumns enriched by IDs reveal anti-correlated intensity variation as well as a similarity between temperature and power dependences of both bands. A change of dominant polarization takes place across the spectra, being likely related to variation of exciton level ordering at tensile strain. Discrete narrow lines observed in the spectra are considered as manifestation of strain-induced one-dimensional carrier confinement in the IDs. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

14 páginas, 7 figuras.-- PACS number(s): 78.67.Hc, 71.55.Eq, 78.66.Fd, Microphotoluminescence (PL) spectra of a single InAs/GaAs self-assembled quantum dot (QD) are studied under the main excitation of electron-hole pairs in the wetting layer (WL) and an additional infrared (IR) laser illumination. It is demonstrated that the IR laser with fixed photon energy well below the QD ground state induces striking changes in the spectra for a range of excitation energies and powers of the two lasers. For the main excitation above a threshold energy, defined as the onset of transitions between shallow acceptors and the conduction band in GaAs, the addition of the IR laser will induce a considerable increase in the QD emission intensity. This is explained in terms of additional generation of extra electrons and holes into the QD by the two lasers. For excitation below the threshold energy, the carrier capture efficiency from the WL into the QD is suggested to be essentially determined by the internal electric-field-driven carrier transport in the plane of the WL. The extra holes, generated in the GaAs by the IR laser, are supposed to effectively screen the built-in field, which results in a considerable reduction of the carrier collection efficiency into the QD and, consequently, a decrease of the QD PL intensity. A model is presented which allows estimating the magnitude of the built-in field as well as the dependence of the observed increase of the QD PL intensity on the powers of the two lasers. The use of an additional IR laser is considered to be helpful to effectively manipulate the emission efficiency of the quantum dot, which could be used in practice in quantum-dot-based optical switches., E.S.M. gratefully acknowledges financial support from the Wenner-Gren Foundations and partial support from the Russian Academy of Sciences (Low-Dimensional Nanostructures’ 2003). V.D. is thankful to the Swedish Foundation for International Cooperation in Research and Higher Education (STINT) for financial support.

7 páginas, 4 figuras., We have studied the low-temperature photoluminescence (PL) of the self-assembled InAs single quantum dots (QDs) using conventional micro-PL setup to detect PL from an individual QD. It is demonstrated, that at certain experimental conditions, what concerns the laser excitation energy, the laser power and the crystal temperature, several additional lines, redshifted relative to the ground state transition, appear in the PL spectra. These are interpreted in terms of charged exciton complexes which form due to the population of quantum dots with a nonequal amount of electrons and holes. The latter phenomenon is determined by the excess energies of photogenerated carriers and is proposed as an effective optical method to create and study charged exciton complexes in QDs., One of the authors (E.S.M.) gratefully acknowledges financial support of Svenska Institutet within the Visby Program and partial support of the Russian Academy of Sciences (Low-Dimensional Nanostructures, 2001).

11 páginas, 7 figuras.-- PACS number(s): 73.21.La, 71.55.Eq, 73.22.Dj, 71.70.Gm, We study the photoluminescence of single InAs/GaAs self-assembled quantum dots for a range of excitation powers, excitation energies and sample temperatures 4K30K), this effect vanishes due to the essential decrease of the steady-state free electron concentration in the GaAs barrier as a result of thermally excited free holes appearing in the GaAs barrier valence band which provides an effective recombination channel for the free electrons. These experimental observations could be used as an effective tool to create and study charged excitons in quantum dots., One of us (E.S.M.) gratefully acknowledges financial support from the Wenner-Gren Foundations and partial support from the Russian Academy of Sciences (Low-Dimensional Nanostructures’ 2001).

4 páginas, 3 figuras., It is demonstrated that the photoluminescence spectra of single self-assembled quantum dots are very sensitive to the excitation energy and crystal temperature. A qualitative explanation is given in terms of the effective diffusivity of the photogenerated carriers, determined by the experimental conditions, which influence the capture probability and hence also the charge state of the quantum dots (QDs). This is proposed as an effective tool to populate quantum dots with extra electrons in order to study phenomena involving charged excitons., One ofthe authors (E.S.M.) gratefully acknowledges financial support of the Swedish Institute within the Visby Programme and partial support of the Russian Academy of Sciences (Low-Dimensional Nanostructures’ 2001).