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The blocking voltage capabilities of junction transistors are calculated for three types of doping profiles. The avalanche multiplication factor (M) is calculated directly from the ionization rates and the dependence of M on the device parameters is established. The dependence of current gain, , on M is calculated from the breakdown condition M = 1. The relationship among M, the blocking voltage, V, and the current gain, , is presented graphically, and their significance is discussed.
Several groups of transistors are fabricated with epitaxial collector, epitaxial base and diffused emitter. The collector-emitter breakdown voltage, V, collector-base breakdown, V, and current gain, , are directly measured. The experimental values of the dependence of (V/V) on is compared with theoretical results. Good correlation is observed. [ABSTRACT FROM AUTHOR]

An investigation has been made on the depletion layer properties of simultaneously-diffused, double-diffused and triple-diffused transistors. The theoretical equations are solved with the aid of three computer programmes, taking into consideration both the Gaussian and the complementary error function distribution. The results are analyzed graphically and the dependence of depletion layer width on device parameters is established. It is observed that the predominant factors that influence the punch through voltage of the three transistor designs are the base doping and the base width. [ABSTRACT FROM AUTHOR]

Characterizes a high-performance n-type AlAs/InGaAs/AlAs/InAlAs double-barrier quantum well infrared photodetector grown on InP with photovoltaic (PV) and photoconductive (PC) dual mode operation. Use of a intersubband transition from the ground bound state to the quasibound excited state by PV and PC detection scheme.