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Your search keyword '"Kang, X.N."' showing total 11 results
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11 results on '"Kang, X.N."'

1. P‐11.6: Efficient radiative recombination centers induced by trench defects in multiple‐quantum wells of red InGaN light‐emitting diodes

Author

Pan, Z.J., primary, Chen, Z.Z., additional, Chen, Y.Y., additional, Nie, J.X., additional, Deng, C.H., additional, Zhang, H.D., additional, Dong, B.Y., additional, Xin, X., additional, Chen, W.H., additional, Kang, X.N., additional, Liang, Z.W., additional, Wang, Q., additional, Zhang, G.Y., additional, and Shen, B., additional

Published
2023
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2. P‐10.14: A Nanoscale Composite Substrate for Improving Micro‐LED Emission Efficiency and Reducing lift‐off Damage

Author

Zhang, H.D., primary, Chen, Z.Z., additional, Chen, Y.Y., additional, Nie, J.X., additional, Pan, Z.J., additional, Deng, C.H., additional, Dong, B.Y., additional, Xin, X., additional, Chen, W.H., additional, Kang, X.N., additional, Liang, Z.W., additional, Wang, Q., additional, Zhang, G.Y., additional, and Shen, B., additional

Published
2023
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8. Polarization modification in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers

Author

Tao, Y.B., Chen, Z.Z., Zhang, F.F., Jia, C.Y., Qi, S.L., Yu, T.J., Kang, X.N., Yang, Z.J., You, L.P., Yu, D.P., and Zhang, G.Y.

Subjects
Gallium -- Electric properties, Gallium -- Optical properties, Indium -- Electric properties, Indium -- Optical properties, Light-emitting diodes -- Electric properties, Polarization (Electricity) -- Analysis, Quantum wells -- Electric properties, Quantum wells -- Optical properties, Quantum wells -- Composition, Physics
Abstract

Metal-organic vapor phase epitaxy is used for growing light emitting diodes (LEDs) by using InGaN/GaN quantum wells (QWs) with thin low temperature GaN (LT-GaN) layers bounding each InGaN layer. The better performance of LEDs incorporating the LT-GaN layers is because of the suppressed polarization from piezoelectric fields.

Published
2010

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