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The efficient healing of skin wounds and tissue wounds has been the focus of clinical research. The complex process of body wound healing and various influencing factors make it more important to construct multifunctional composite wound tissue engineering materials that can meet all requirements. Black phosphorus (BP) is a multifunctional two-dimensional material with good biocompatibility, oxidative stress regulation ability, photothermal effect, and antibacterial ability. It has been widely used in biomedical engineering. In this review, the pathophysiological process and influencing factors of wound healing will be briefly introduced. On this basis, the properties, preparation methods, application status, and mechanism of action of BP in wound tissue engineering will be introduced in detail. This study will provide a reference for the further application of BP in wound tissue engineering materials by subsequent researchers.

Among the transition metal oxides, hematite (α-Fe2O3) has been widely used in the preparation of memristors because of its excellent physical and chemical properties. In this paper, α-Fe2O3 nanowire arrays with a preferred orientation along the [110] direction were prepared by a facile hydrothermal method and annealing treatment on the FTO substrate, and then α-Fe2O3 nanowire array-based Au/α-Fe2O3/FTO memristors were obtained by plating the Au electrodes on the as-prepared α-Fe2O3 nanowire arrays. The as-prepared α-Fe2O3 nanowire array-based Au/α-Fe2O3/FTO memristors have demonstrated stable nonvolatile bipolar resistive switching behaviors with a high resistive switching ratio of about two orders of magnitude, good resistance retention (up to 103 s), and ultralow set voltage (Vset = +2.63 V) and reset voltage (Vreset = −2 V). In addition, the space charge-limited conduction (SCLC) mechanism has been proposed to be in the high resistance state, and the formation and destruction of the conductive channels modulated by oxygen vacancies have been suggested to be responsible for the nonvolatile resistive switching behaviors of the Au/α-Fe2O3/FTO memristors. Our results show the potential of the Au/α-Fe2O3/FTO memristors in nonvolatile memory applications. [ABSTRACT FROM AUTHOR]

A facile sol–gel spin coating method has been proposed for the synthesis of spin-coated ZnO nanofilms on ITO substrates. The as-prepared ZnO-nanofilm-based W/ZnO/ITO memory cell showed forming-free and tunable nonvolatile multilevel resistive switching behaviors with a high resistance ratio of about two orders of magnitude, which can be maintained for over 103 s and without evident deterioration. The tunable nonvolatile multilevel resistive switching phenomena were achieved by modulating the different set voltages of the W/ZnO/ITO memory cell. In addition, the tunable nonvolatile resistive switching behaviors of the ZnO-nanofilm-based W/ZnO/ITO memory cell can be interpreted by the partial formation and rupture of conductive nanofilaments modified by the oxygen vacancies. This work demonstrates that the ZnO-nanofilm-based W/ZnO/ITO memory cell may be a potential candidate for future high-density, nonvolatile, memory applications. [ABSTRACT FROM AUTHOR]

A facile hydrothermal process has been developed to synthesize the α-Fe2O3 nanowire arrays with a preferential growth orientation along the [110] direction. The W/α-Fe2O3/FTO memory device with the nonvolatile resistive switching behavior has been achieved. The resistance ratio (RHRS/RLRS) of the W/α-Fe2O3/FTO memory device exceeds two orders of magnitude, which can be preserved for more than 103s without obvious decline. Furthermore, the carrier transport properties of the W/α-Fe2O3/FTO memory device are dominated by the Ohmic conduction mechanism in the low resistance state and trap-controlled space-charge-limited current conduction mechanism in the high resistance state, respectively. The partial formation and rupture of conducting nanofilaments modified by the intrinsic oxygen vacancies have been suggested to be responsible for the nonvolatile resistive switching behavior of the W/α-Fe2O3/FTO memory device. This work suggests that the as-prepared α-Fe2O3 nanowire-based W/α-Fe2O3/FTO memory device may be a potential candidate for applications in the next-generation nonvolatile memory devices. [ABSTRACT FROM AUTHOR]

PtOx films were deposited by direct current (DC) reactive magnetron sputtering in Ar/O2 mixture atmosphere at substrate temperatures ranging from 200∘C to 400∘C. The influence of substrate temperature on the structure, morphology, composition, electrical resistivity and infrared emissivity of PtOx films was studied. The X-ray photoelectron spectroscopy (XPS) and grazing incidence X-ray diffraction (GIXRD) results revealed that the as-deposited amorphous PtOx films were mainly composed of PtO and PtO2 phases. It was found that with the increase in the substrate temperature, the proportion of PtO phase in the films increased, while the electrical resistivity and infrared emissivity of the films decreased with the increasing substrate temperature. [ABSTRACT FROM AUTHOR]

PtOx films have been prepared by reactive magnetron sputtering on glass substrates without external heating and characterized by x-ray diffraction (XRD) analysis, x-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM). The resulting PtOx films mainly consisted of amorphous PtO and PtO2, and the composition largely depended on the O2 partial pressure during sputtering. In this study, the effects of the O2 partial pressure on the deposition rate, composition, surface morphology, structure, electrical resistivity, and infrared emissivity of the as-deposited PtOx films were evaluated. It was found that, with increase in the O2 partial pressure, the O/Pt atomic ratio, resistivity, and infrared emissivity of the as-deposited PtOx film increased, while the deposition rate first increased then decreased with increasing O2 partial pressure. In addition, the O2 partial pressure had little influence on the structure or surface morphology of the as-deposited PtOx film. [ABSTRACT FROM AUTHOR]

Incompletely carbonized polyacrylonitrile (PAN) cloths were prepared by heating stabilized PAN cloth at 600-800°C in different atmosphere. Their X-band dielectric and microwave-absorbing properties were investigated. Results showed that the complex permittivity constantly increased with the increasing heating temperature due to the growth of carbon sheets. Conversely, the cloths carbonized in air exhibit lower complex permittivity than those carbonized in nitrogen because the reaction with oxygen restricts the progress of carbonization. The reflection loss below −10 dB can be obtained in X band for the sample carbonized at 650°C for 2 h in air. © 2012 Wiley Periodicals, Inc. J. Appl. Polym. Sci., 2013 [ABSTRACT FROM AUTHOR]

Abstract: SiCf/LAS glass-ceramic composites were prepared by hot-press sintering using SiC fibers, SiO2, Al2O3 and Li2CO3 powders as starting materials. Mechanical properties, such as strength, toughness, and dielectric properties at X-band microwave frequency of these composites were evaluated. Results showed that both the content and the length of SiCf had significant influences on the dielectric and the mechanical properties of SiCf/LAS composites. The complex permittivity of the composites rose from 12 to 35 for ε′ and 18 to 120 for ε″ at 8.2GHz with the increasing SiCf content. In addition, the reinforcement and toughening effects of SiCf on the composites were also significant. Our results indicate that the SiCf/LAS composite is a promising material with both the electromagnetic wave absorbing and the load-bearing abilities suitable as structural microwave absorbing and microwave shielding materials. [Copyright &y& Elsevier]

Objective: SUMO Specific Peptidase 3 (SENP3) is involved in the occurrence and development of various cancers. However, its effects on gliomas have been barely reported. Herein, this research was designed to probe the potential mechanisms of SENP3 mediating beclin-1(BECN1) SUMO3 modification in autophagy in gliomas., Methods: SENP3 expression in gliomas was analyzed through bioinformatic information. Clinical samples of glioma tissues were collected and frozen. SENP3 expression was evaluated with western blot. In glioma cells, autophagy- and apoptosis-related proteins, viability, and apoptosis were assessed with western blot and immunofluorescence, the cell counting kit-8, and flow cytometry, respectively. The SUMO modification of BECN1 and interactions between BECN1 and PIK3C3 were identified with Ni-NTA pull-down and co-immunoprecipitation assays, respectively. The tumor formation assay was carried out in nude mice for in vivo validation., Results: Bioinformatics analysis predicted the overexpression of SENP3 in gliomas, which was confirmed in clinical samples and glioma cells. SENP3 silencing promoted autophagy and apoptosis and inhibited viability in glioma cells, which was counteracted by further autophagy inhibition. Mechanistically, SENP3 facilitated BECN1 deSUMOylation to mediate the SUMO3 modification of BECN1, thus impeding the formation of BECN1-PIK3C3 complexes. The loss of the SUMO part in BECN1 lowered the protein expression of LC3 and the value of LC3BII/LC3BI in glioma cells. Additionally, SENP3 silencing boosted autophagy and repressed tumor growth in mice, which was neutralized by further autophagy repression., Conclusion: SENP3 fosters the deSUMOylation of BECN1 to block the formation of BECN1-PIK3C3 complexes, thus restraining glioma cell autophagy., (©The Author(s) 2024. Open Access. This article is licensed under a Creative Commons CC-BY International License.)