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85 results on '"Kang, Sung-Kwan"'

4. Image Corner Detection Using Hough Transform

Author

Kang, Sung Kwan, Choung, Young Chul, Park, Jong An, Hutchison, David, editor, Kanade, Takeo, editor, Kittler, Josef, editor, Kleinberg, Jon M., editor, Mattern, Friedemann, editor, Mitchell, John C., editor, Naor, Moni, editor, Nierstrasz, Oscar, editor, Pandu Rangan, C., editor, Steffen, Bernhard, editor, Sudan, Madhu, editor, Terzopoulos, Demetri, editor, Tygar, Dough, editor, Vardi, Moshe Y., editor, Weikum, Gerhard, editor, Marques, Jorge S., editor, Pérez de la Blanca, Nicolás, editor, and Pina, Pedro, editor

Published
2005
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5. Modified Radius-Vector Function for Shape Contour Description

Author

Kang, Sung Kwan, Ahmad, Muhammad Bilal, Chun, Jong Hun, Kim, Pan Koo, Park, Jong An, Kanade, Takeo, editor, Kittler, Josef, editor, Kleinberg, Jon M., editor, Mattern, Friedemann, editor, Mitchell, John C., editor, Nierstrasz, Oscar, editor, Pandu Rangan, C., editor, Steffen, Bernhard, editor, Sudan, Madhu, editor, Terzopoulos, Demetri, editor, Tygar, Dough, editor, Vardi, Moshe Y., editor, Weikum, Gerhard, editor, Laganá, Antonio, editor, Gavrilova, Marina L., editor, Kumar, Vipin, editor, Mun, Youngsong, editor, Tan, C. J. Kenneth, editor, and Gervasi, Osvaldo, editor

Published
2004
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12. Integration scheme for 3D NAND with nonreplacement word line and its cell characteristics investigation

Author

Ashish Pal, Gill Yong Lee, Bhuyan Bhaskar Jyoti, Amy Child, Gabriela Alva, David Hwang, Tomohiko Kitajima, Kang Sung-Kwan, Nancy Fung, Liu Jiang, Blessy Alexander, El Mehdi Bazizi, Chang Seok Kang, Buvna Ayyagari, and Takehito Koshizawa

Subjects
Scheme (programming language), Interference (communication), Computer science, Memory cell, Logic gate, Process (computing), Electronic engineering, NAND gate, Line (text file), computer, Word (computer architecture), computer.programming_language
Abstract

We demonstrate an integration scheme for a 3D NAND memory cell with non-replacement word line (WL) by investigating the cell characteristics, including program, erase, retention, and interference based on our in-house process and device flow of 3D NAND memory arrays. The non-replacement WL is called WL-First in which P+ polysilicon is implemented as the gate material. We investigate the figures of merits of the WL-First scheme compared with the WL-Last scheme, which uses metal as the gate material.

Published
2021
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16. Integration scheme for 3D NAND with nonreplacement word line and its cell characteristics investigation

Author

Jiang, Liu, primary, Kang, Chang Seok, additional, Pal, Ashish, additional, Bazizi, El Mehdi, additional, Kitajima, Tomohiko, additional, Fung, Nancy, additional, Alva, Gabriela, additional, Child, Amy, additional, Bhuyan, Bhaskar, additional, Koshizawa, Takehito, additional, Kang, Sung-Kwan, additional, Lee, Gill, additional, Hwang, David, additional, Alexander, Blessy, additional, and Ayyagari, Buvna, additional

Published
2021
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27. Interfacial reactions between WN[sub x] and poly Si[sub 1-x]Ge[sub x] films.

Author

Kang, Sung Kwan, Min, Byoung Gi, Kim, Jae Jin, Ko, Dae-Hong, Kang, Han Byul, Yang, Cheol Woong, and Cho, Mann-Ho

Subjects
*THIN films, *SILICON, *NONMETALS, *TRANSMISSION electron microscopy, *ELECTRON microscopy, *PHOTOELECTRON spectroscopy, *PHYSICS
Abstract

The interfacial reactions at the WN[sub x]/poly Si interface and at the WN[sub x]/poly Si[sub 0.4]Ge[sub 0.6] interface with the annealing conditions were investigated using high resolution transmission electron microscope (HR-TEM) and x-ray photoelectron spectroscopy (XPS). In the WN[sub x]/poly Si system, after a short period of annealing, an island-type precipitation was clearly observed under the Si–N layer, which was formed between WN[sub x] and poly Si. HR-TEM image and XPS analysis indicated that the island-type precipitation is composed of W, Si, and N. With increasing annealing time, the Si–N layer became thinner and island-type precipitation became continuous layer. However, in the WN[sub x]/poly Si[sub 0.4]Ge[sub 0.6] system, the formation of precipitation was obviously prevented after annealing and the island-type precipitation remained between the WN[sub x] films and the poly Si[sub 1-x]Ge[sub x] films in spite of long time annealing. These results are attributed to the fact that the Si in poly Si[sub 0.4]Ge[sub 0.6] reacts preferentially with N, produced in the decomposition of WN[sub x] films, due to lower Gibbs free energy of the Si compound than the Ge compound and unreacted Ge atoms accumulate at the WN[sub x]/poly Si[sub 1-x]Ge[sub x] interface. © 2003 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Published
2003
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