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Background: We reviewed clinical characteristics, treatment outcomes, local and distant failure and prognostic factors in patients with salivary gland carcinoma treated with surgery and postoperative radiotherapy.Materials and Methods: We retrospectively reviewed 75 patients with salivary gland cancer. 69 (%92) patients had cancer of the parotid gland, 3 (%4) patients had cancer of the submandibular gland and 3 (%4) patients had cancer of the minor salivary gland. 4 patients underwent postoperative chemoradiotherapy and 71 patients underwent postoperative radiotherapy. Median radiotherapy dose was 60Gy (range, 30Gy to 69Gy).Results: Median age was 59.6±17.9 (13-88) and the female/male ratio was 1/1.7. Median follow-up 52 months (2-228 months). The mean overall survival 69.2±8 (95%confidence interval[CI], 53.4-85.1) months. The 1-,3-,5- and 10- year overall survival rates were 79.8%, 53.2%, 37.4% and 22.8% respectively. The mean disease free survival 79.7±10 (95%CI, 60.1-99.3) months. The 1-,3-,5- and 10- year disaese free survival rates were 72.8%, 51.9%, 44.1% and 30.4% respectively. On multivariate analysis, the OS was significantly better for the female sex (hazard ratio[HR]:3,0;95%CI:1.5-5.6;P=0.001), absence of lymph node involvement ([HR]:3,0;95%CI:1.7-5.3;P=0.0001), lower tumor grade ([HR]:25,7;95%CI:3.3-199.3;P=0.002), negativity of the surgical margin ([HR]:2,3;95%CI:1.3-4.2;P=0.005), absence of lymphovasculer invasion ([HR]:2,6;95%CI:1.5-4.6;P=0.001), absence of extracapsuler extension ([HR]:6,5;95%CI:2.2-19.1;P=0.001), absence of perineural invasion ([HR]:4,8;95%CI:2.6-8.7;P=0.0001) and ≤60Gy radiotherapy dose ([HR]:3,1;95%CI:1.7-5.5;P=0.0001). They observed local recurrens in17 (23%) patients and distant metastasis in 33 (44%) patients.Conclusions: Employing existing standards of postoperative radiotherapy is a possible treatment that was found to be effective mainly in patients with salivary gland carcinomas. [ABSTRACT FROM AUTHOR]

Abstract: Electrical characteristics of the Al/p-type silicon/2,9,16,23-tetrakis-{6-(-thiophene-2-carboxylate)-hexylthio}phthalocyaninato cobalt(II) organic semiconductor contact have been investigated by current–voltage and capacitance–voltage measurements. The ideality factor (1.33), barrier height (0.90 eV) and series resistance (314.5 kΩ) of the Al/p-Si/CoPc contact were obtained from current–voltage characteristics. The barrier height obtained for the Al/p-Si/CoPc diode is significantly higher than that of obtained for the conventional Al/p-Si Schottky diode. The CoPc organic layer modifies the effective barrier height of Al/p-Si Schottky diode as the organic film forms a physical barrier between Al metal and the p-Si. The interface-state density of the diode was determined and interface-state density was found to vary from 1.23×1014 eV−1 cm−2 to 0.69×1014 eV−1 cm−2. It is evaluated that the CoPc organic layer modifies electrical parameters and interface properties of Al/p-Si junction. [Copyright &y& Elsevier]

Abstract: Electrical conductivity, thermoelectric power and refractive index disperson properties of the Co(II) complex of tetrasubstituted thiophene-attached phthalocyanine have been investigated for the first time. The electrical conductivity of the sample increases with increase in temperature. Electrical conductivity and thermoelectric power results suggest that the 2, 9, 16, 23-tetrakis-6-(-thiophene-2-carboxylate)-hexylthio-phthlocyaninato cobalt (II) complex {M[Pc(S(CH2)6OCOC4H3S)4]; (M=Co (II)} (CoPc) sample is a p-type organic semiconductor. The electrical conductivity mechanism changes from thermally activated conductivity to the conductivity by hopping in the localized states. The refractive index at infinite wavelength and optical band gap of the CoPc sample were found to be 3.43 and 3.65eV, respectively. [Copyright &y& Elsevier]

Highlights: [•] Nano-metal phthalocyanine complexes films were prepared. [•] The surface morphologies were studied via AFM micrographs. [•] The refractive index (n) and the absorption index (k) were calculated. [•] The optical dispersion parameters were determined in details. [•] Nano-crystalline metal phthalocyanine can be used in optoelectronic applications. [ABSTRACT FROM AUTHOR]

Abstract: The optical properties of 2(3),9(10),16(17),23(24)-tetrakis-{6-(-benzofuran-2-carboxylate)-hexylthio} phthalocyaninatozinc(II) {Zn[Pc(b-S(CH2)6OCOBz-furan)4], (ZnPcBzF) thin film prepared by spin coating method were investigated. The optical constants of the prepared film were determined using spectrophotometric measurements of the transmittance and reflectance at normal incidence in the spectral range 200–800nm. The analysis of the spectral behavior of the absorption coefficient in the intrinsic absorption region revealed two direct allowed optical band gap of 2.58 and 3.87eV. The dispersion of the refractive index was discussed in terms of the single oscillator using Sellmeier dispersion formula. The high frequency dielectric constant (ε ∞ ) and the lattice dielectric constant (ε L ) were estimated. From the optical constants analysis, the optical conductivity was also considered. Discussion of the obtained results and their comparison with the previous published data were also given. The obtained results of this new zinc phthalocyanine benzofuran derivative (ZnPcBzF) support the desirable feature for the microelectronic and optoelectronic devices. [Copyright &y& Elsevier]