221 results on '"Kamata, Isaho"'
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2. Fast growth of n-type 4H-SiC bulk crystal by gas-source method
3. Quality Evaluation of 150 mm 4H-SiC Grown at over 1.5 mm/h by High-Temperature Chemical Vapor Deposition Method
4. Mechanical-stressing measurements of formation energy of single Shockley stacking faults in 4H-SiC
5. High-resolution x-ray topography of dislocations in 4H-SiC epilayers
6. Reduction in dislocation densities in 4H-SiC bulk crystal grown at high growth rate by high-temperature gas-source method
7. Fast 4H-SiC Bulk Growth by High-Temperature Gas Source Method
8. Development of 150-mm 4H-SiC Substrates Using a High-Temperature Chemical Vapor Deposition Method
9. Formation of Double Shockley Stacking Faults in Heavily Nitrogen Doped 4H-SiC Crystal with Reduction of Residual Stress around Scratch Damage
10. Development of High Growth Rate SiC Epi-Reactor with Controlled Thermal Gradient
11. Distinction of the Nuclei of Shockley Faults in 4H-SiC{0001} pin Diodes by Electroluminescence Imaging
12. Migration of Dislocations in 4H-SiC Epilayers during the Ion Implantation Process
13. Glide of C-core partial dislocations along edges of expanding double-Shockley stacking faults in heavily nitrogen-doped 4H-SiC
14. Deep Level Defects Related to Carbon Displacements in n- and p-Type 4H-SiC
15. Comparison of Electrical Characteristics of 4H-SiC(0001) and (000-1) Schottky Barrier Diodes
16. Observation of Shrinking and Reformation of Shockley Stacking Faults by PL Mapping
17. Dynamic Characteristics of 4H-SiC pin Diode on (000-1)C-Face with Small Forward Degradation
18. Development of Non-Destructive In-House Observation Techniques for Dislocations and Stacking Faults in SiC Epilayers
19. Comparison of Propagation and Nucleation of Basal Plane Dislocations in 4H-SiC(000-1) and (0001) Epitaxy
20. Simulation of Threading Edge Dislocation Images in X-Ray Topographs of Silicon Carbide Homo-Epilayers
21. Structure of In-Grown Stacking Faults in the 4H-SiC Epitaxial Layers
22. Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates
23. Improvement in Electrical Performance of Schottky Contacts for High-Voltage Diode
24. 8.3 kV 4H-SiC PiN Diode on (000-1) C-Face with Small Forward Voltage Degradation
25. Influence of Growth Conditions and Substrate Properties on Formation of Interfacial Dislocations and Dislocation Half-loop Arrays in 4H-SiC(0001) and (000-1) Epitaxy
26. Suppressed expansion of single Shockley stacking faults at narrow widths in 4H-SiC
27. Direct evaluation of threading dislocations in 4H-SiC through large-angle convergent beam electron diffraction
28. (Invited) Recent Progress in 4H-SiC CVD Growth for High-Voltage Power Devices
29. Monitoring of Substrate and Epilayer Surfaces by Mirror Projection Electron Microscope
30. High-Resolution X-ray Topography of Dislocations in 4H-SiC Epilayers
31. Fabrication of 3.4kV high voltage n-type 4H-SiC Schottky barrier diodes using thick epitaxial layers
32. IRAS Analysis of the Early Stage of Thermal Oxidation on a SiC Surface
33. Direct evaluation of threading dislocations in 4H-SiC through large-angle convergent beam electron diffraction.
34. X-ray topographical analysis of 4H-SiC epitaxial layers using a forward-transmitted beam under a multiple-beam diffraction condition
35. X-Ray Topography Analysis of 4H-SiC Crystals Grown by the High-Temperature Gas Source Method
36. Immobilization Phenomenon of Partials Surrounding Double Shockley Stacking Faults in Heavily Nitrogen Doped 4H-SiC Crystal with Thermal Anneal
37. Recent advances in 4H-SiC epitaxy for high-voltage power devices
38. (Invited) Non-Destructive Three-Dimensional Imaging of Extended Defects in 4H-SiC
39. Correlation between shapes of Shockley stacking faults and structures of basal plane dislocations in 4H-SiC epilayers
40. Stable and high-speed SiC bulk growth without dendrites by the HTCVD method
41. Developing Technologies of SiC Gas Source Growth Method
42. Limitations in Very Fast Growth of 4H-SiC Crystals by High-Temperature Gas Source Method
43. Advances in Fast Epitaxial Growth of 4H-SiC and Defect Reduction
44. Three-Dimensional Imaging of Extended Defects in 4H-SiC
45. Doping Fluctuation and Defect Formation in Fast 4H-SiC Crystal Growth Using a High-Temperature Gas Source Method
46. Analysis and Reduction of Stacking Faults in Fast Epitaxial Growth
47. Three-dimensional imaging and tilt-angle analysis of dislocations in 4H-SiC by two-photon-excited band-edge photoluminescence
48. Deflection of threading dislocations in patterned 4H–SiC epitaxial growth
49. High-speed, high-quality crystal growth of 4H-SiC by high-temperature gas source method
50. Fast 4H-SiC Epitaxial Growth on 150 mm Diameter Area with High-Speed Wafer Rotation
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