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A unique experimental setup utilizing a miniature integrating sphere with a cryostat was employed to measure spectrally resolved the absolute external photoluminescence quantum efficiency (eta(sub lum)) in the temperature range from 6 K to beyond room temperature. Direct access to the eta(sub lum) was accomplished by a simple procedure for calibrating the spatially integrated emission spectra absolutely. The fraction of light coupled out of the sphere into the detection system was in good approximation independent of the emitted wavelength and the emission properties of the studied samples.

Research was conducted to examine the optical properties (Al(sub x)Ga(sub 1-x))0.52In0.48P at the crossover from a direct-gap to an indirect-gap semiconductor. Three epitaxial layers deposited by solid-source molecular beam epitaxy with varying Al content x were studied. While two had compositions within the immediate vicinity of the crossover point, the other was assigned to the indirect-gap regime. Results revealed that stimulated emission involved direct recombination.

ZnO(0001) substrates were ion implanted with 100 keV of Co and 300 keV of Gd at different fluences ranging from 5×1013–1×1015/cm2. The resulting Co:ZnO and Gd:ZnO samples were analyzed with respect to their structural, magnetic, and optical properties. The effect of annealing at 350 °C on the structure and the resulting magnetic and optical properties were investigated as well. For Co:ZnO hardly any changes were observable, neither in the structural nor in the magnetic properties, even though the existence of substitutional Co2+ in the ZnO lattice could be shown by means of low temperature photoluminescence especially for Zn-annealed samples. For the much larger Gd ion the implantation leads to a changed crystal structure, which leads to a ferromagneticlike behavior for higher implantation doses, which could even be enhanced by annealing in vacuum. Ferromagnetic behavior in annealed Gd:ZnO is corroborated by ferromagnetic resonance measurements at low temperatures. The distinct behavior of Gd- and Co-implanted ZnO highlights the importance of defects in the understanding of the magnetic properties in dilute magnetic semiconductors. [ABSTRACT FROM AUTHOR]

InAs quantum dot (QD) layers grown by molecular-beam epitaxy were investigated by transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy. To achieve the highest possible In concentration in the QDs, InGaAs (instead of GaAs) cap layers with different In concentrations were deposited after the growth of the InAs QD layer. We combine different TEM techniques to determine the shape, size, and composition of the QDs. By applying a post-processing procedure, we are able to reconstruct the In concentration in the QDs which is measured too low in TEM due to the embedding of the QDs in material with lower In concentration and averaging along the finite TEM sample thickness. The determination of the composition of the layers on an atomic scale shows that the In concentration in the QDs increases in growth direction and reaches values up to 90%. Redistribution of indium during the InGaAs cap layer growth leads to a decrease of the In concentration in the cap layer with respect to the nominal In concentration. The observed redshift of the PL peak with increasing In concentration in the cap layer is attributed to the enlargement of island size and the change of the strain in the QD layers. [ABSTRACT FROM AUTHOR]

The influence of ZnO seed crystals and postgrowth annealing on low-temperature aqueous chemically grown ZnO nanorods is analyzed. At the seed crystal/nanorod interface a high density of structural defects leads to emission at 3.332 eV, attributed to excitons bound to structural defects. This peak is absent for seed crystals, very pronounced for rods of shorter lengths grown on seed crystals, and reduced for longer nanorods. After annealing in oxygen and nitrogen atmosphere, the near-band-edge excitonic transitions sharpen and deep-level emission is strongly reduced. Time-resolved photoluminescence measurements show a striking similarity between donor-bound excitons and excitons bound to structural defects. [ABSTRACT FROM AUTHOR]

We demonstrate a far-field nano-photoluminescence setup based on the combination of a hemispherical solid immersion lens (SIL) with a confocal microscope. The spatial resolution is confirmed to be 0.4 times the wavelength in vacuum in terms of half width at half maximum. The collection efficiency is found to be about five times higher than the same microscope without SIL, which is consistent with our theoretical analysis. We investigate in detail the influence of an air gap between the SIL and the sample surface on the system performance, and prove both experimentally and theoretically the tolerance of this far-field system to an air gap of several micrometers. These features make the present setup an ideal system for spatially resolved spectroscopy of semiconductor nanostructures. In particular, we show two examples of such applications in which the present setup is clearly suitable: Studies of excitonic transport in quantum wells and spectroscopy of single quantum dots with emphasis on polarization dependence and weak-signal detection. [ABSTRACT FROM AUTHOR]