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Twisted bilayers of two-dimensional semiconductors offer a versatile platform for engineering quantum states for charge carriers using moiré superlattice effects. Among the systems of recent interest are twistronic MoX 2 /WX 2 heterostructures (X = Se or S), which undergo reconstruction into preferential stacking domains and highly strained domain wall networks, determining the electron/hole localization across moiré superlattices. Here, we present a catalogue of options for the formation of self-organized quantum dots and wires in lattice-reconstructed marginally twisted MoX 2 /WX 2 bilayers with a relative lattice mismatch δ ≪ 1 for twist angles ranging from perfect alignment to θ ∼ 1°. On the basis of multiscale modeling taking into account twirling of domain wall networks, we analyze bilayers with both parallel and antiparallel orientations of their unit cells and describe crossovers between different positioning of band edges for electrons and holes across moiré superlattices when θ < δ and θ > δ.

Lattice relaxation in twistronic bilayers with close lattice parameters and almost perfect crystallographic alignment of the layers results in the transformation of the moiré pattern into a sequence of preferential stacking domains and domain wall networks. Here, we show that reconstructed moiré superlattices of the perfectly aligned heterobilayers of same chalcogen transition metal dichalcogenides have broken-symmetry structures featuring twisted nodes ("twirls") of domain wall networks. The analysis of twist-angle dependence of strain characteristics for the broken-symmetry structures shows that the formation of twirl reduces the amount of hydrostatic strain around the nodes, potentially weakening their influence on the band edge energies of electrons and holes.

The combination of plasmonic nanoparticles and semiconductor substrates changes the properties of hybrid structures that can be used for various applications in optoelectronics, photonics, and sensing. Structures formed by colloidal Ag nanoparticles (NPs) with a size of 60 nm and planar GaN nanowires (NWs) have been studied by optical spectroscopy. GaN NWs have been grown using selective-area metalorganic vapor phase epitaxy. A modification of the emission spectra of hybrid structures has been observed. In the vicinity of the Ag NPs, a new emission line appears at 3.36 eV. To explain the experimental results, a model considering the Fröhlich resonance approximation is suggested. The effective medium approach is used to describe the enhancement of emission features near the GaN band gap.

Hybrid nanostructures based on InGaN nanowires with decorated plasmonic silver nanoparticles are investigated in the present study. It is shown that plasmonic nanoparticles induce the redistribution of room temperature photoluminescence between short-wavelength and long-wavelength peaks of InGaN nanowires. It is defined that short-wavelength maxima decreased by 20%, whereas the long-wavelength maxima increased by 19%. We attribute this phenomenon to the energy transfer and enhancement between the coalesced part of the NWs with 10-13% In content and the tips above with an In content of about 20-23%. A proposed Fröhlich resonance model for silver NPs surrounded by a medium with refractive index of 2.45 and spread 0.1 explains the enhancement effect, whereas the decreasing of the short-wavelength peak is associated with the diffusion of charge carriers between the coalesced part of the NWs and the tips above.

Control of directionality of emissions is an important task for the realization of novel nanophotonic devices based on nanowires. Most of the existing approaches providing high directionality of the light emitted from nanowires are based on the utilization of the tapered shape of nanowires, serving as nanoantenna coupling with the light waveguided in nanowire and the directional output beam. Here we report the beaming of the emitted light with wavelength near 800 nm by naturally formed core-shell AlGaAs NW with multiply GaAs quantum dots (QDs) diameter 30 nm and height 10 nm, while the diameter of NW 130 nm, what does not support efficient emission into waveguided modes, including the mode HE 11 . Experimental measurements show that intensity of emission for directions in the vicinity of the axis of NW is about two orders of magnitude higher than for perpendicular directions. The developed theoretical approach allowed us to calculate the probability of spontaneous emission for various directions and into waveguided modes and showed that highly directional radiation can be provided by the intrinsic emission properties of cylindrical NW. Our results suggest that for the small diameter of NW, directional emissions are associated with an TM 0 leaky mode (when electric field oriented in axial direction) and therefore manifests in an existence of axial electric dipole transitions in quantum dots.

Interaction of cavity modes with an exciton in a meso-cavity (the structure supporting several cavity modes separated by an energy interval comparable to Rabi-splitting of an exciton and cavity modes) has been analyzed using a quantum-mechanical approach. Simultaneous interaction of an exciton and several cavity modes results in few novel effects such as ladder-like increase of the exciton population in the system, quantum beating and non-monotonic dependence of the ground polariton state in the system on the pumping.

Gallium oxide is a promising semiconductor with great potential for efficient power electronics due to its ultra-wide band gap and high breakdown electric field. Optimization of halide vapor phase epitaxy growth of heteroepitaxial [Formula: see text]-Ga 2 O 3 layers is demonstrated using a simulation model to predict the distribution of the ratio of gallium to oxygen precursors inside the reactor chamber. The best structural quality is obtained for layers grown at 825-850 °C and with a III/VI precursor ratio of 0.2. Although the structural and optical properties are similar, the surface morphology is more deteriorated for the [Formula: see text]-Ga 2 O 3 layers grown on 5 degree off-axis sapphire substrates compared to on-axis samples even for optimized process parameters. Cathodoluminescence with a peak at 3.3 eV is typical for unintentionally doped n-type [Formula: see text]-Ga 2 O 3 and shows the appearance of additional emissions in blue and green region at ~ 3.0, ~ 2.8, ~ 2.6 and ~ 2.4 eV, especially when the growth temperatures is lowered to 800-825 °C. Estimation of the band gap energy to ~ 4.65 eV from absorption indicates a high density of vacancy defects.

The use of metamaterial as a way to mitigate the negative effects of absorption in metals on the Purcell effect in metal-dielectric structures is investigated. A layered metal-dielectric structure is considered as an anisotropic medium in the long-wavelength limit. The dispersion of the surface plasmon appearing at the boundary between such a structure and a different dielectric material, as well as the position of the peak in the local density of states are studied for various combinations of materials and filling factors of the periodic structure. The calculated frequency dependence of the Purcell factor demonstrates an increase in peak value compared to the conventional plasmonic structure. The results obtained using effective media approach are compared to the results of numerical modelling.

The scheme of a generation of ultrasound waves based on optically excited Tamm plasmon structures is proposed. It is shown that Tamm plasmon structures can provide total absorption of a laser pulse with arbitrary wavelength in a metallic layer providing the possibility of the use of an infrared semiconductor laser for the excitation of ultrasound waves. Laser pulse absorption, heat transfer and dynamical properties of the structure are modeled, and the optimal design of the structure is found. It is demonstrated that the Tamm plasmon-based photoacoustic generator can emit ultrasound waves in the frequency band up to 100 MHz with predefined frequency spectrum.

The interaction of an exciton and cavity modes is considered in planar meso-cavities, which have lateral sizes corresponding to few wavelengths. In meso-cavities, the frequency interval between the optical modes is comparable or smaller than the value of the Rabi splitting between the exciton and the optical modes. The Hamiltonian of the interaction between the exciton and the cavity modes is constructed, and it is shown that such an interaction between the cavity modes and the exciton can occur both in weak and in strong coupling regimes. The latter case can be accompanied by a pronounced splitting of the emission peaks as shown for modelled meso-cavities of triangular, square and hexagonal shapes, where it is demonstrated that Q-factors for the adjacent cavity modes as well as the strength of interaction with excitons can differ by few orders of magnitude.

Control over spontaneous emission rate is important for improving efficiency in different semiconductor applications including lasers, LEDs and photovoltaics. Usually, an emitter should be placed inside the cavity to increase the spontaneous emission rate, although it is technologically challenging. Here we experimentally demonstrate a phenomenon of super-radiance observed in a cavity-less periodic Bragg structure based on InAs monolayer-thick multiple quantum wells (MQW). The collective super-radiant mode shows enhanced emission rate for specific angles and frequencies. This behaviour correlates with the calculations demonstrating individual spots of the enhanced Purcell coefficient near the Bragg condition curve. This study provides a perspective for realization of surface emitting cavity-less lasers with distributed feedback.

Periodic metal-dielectric structures attract substantial interest since it was previously proposed that the spontaneous emission amplification rates (the Purcell factor) in such structures can reach enormous values up to 10 5 . However, the role of absorption in real metals has not been thoroughly considered. We provide a theoretical analysis showing that absorption leads to diminishing values of Purcell factor. We also suggest that using emitting organic compounds such as CBP (4,4-Bis(N-carbazolyl)-1,1-biphenyl) can lead to a moderate increase of about an order of magnitude in the Purcell factor. Defining the experimentally measured Purcell factor as a ratio between the excited state lifetimes in bare CBP and in periodic structure, this increase in the fabricated periodic structure is demonstrated through a 4-8 times decrease in excited state radiative lifetime compared to a bare organic material in a wide emission spectrum.

We demonstrate that disorder in photonic crystals could lead to pronounced modification of spontaneous emission rate in the frequency region corresponding to the photonic band gap (PBG). Depending on the amount of disorder, two different regimes of the Purcell effect occurs. We provide statistical analysis of Purcell coefficient on the frequency of the emitter and its position within the sample. For the moderate disorder, an enhancement of spontaneous emission occurs at the edge of PBG due to the modification of properties of the edge state. This effect is responsible for recently observed mirrorless lasing in photonic crystals at the edge of PBG. When the level of disorder increases, the spontaneous emission rate enhances within the PBG due to the appearance of the high quality factor states. This effect is likely responsible for a superlinear dependence of emissions on pumping observed in synthetic opals.

We have developed a method to fabricate GaN planar nanowires and cavities by combination of Focused Ion Beam (FIB) patterning of the substrate followed by Metal Organic Vapor Phase Epitaxy (MOVPE). The method includes depositing a silicon nitride mask on a sapphire substrate, etching of the trenches in the mask by FIB with a diameter of 40 nm with subsequent MOVPE growth of GaN within trenches. It was observed that the growth rate of GaN is substantially increased due to enhanced bulk diffusion of the growth precursor therefore the model for analysis of the growth rate was developed. The GaN strips fabricated by this method demonstrate effective luminescence properties. The structures demonstrate enhancement of spontaneous emission via formation of Fabry-Perot modes.

It was theoretically and experimentally demonstrated that in metal/semiconductor Tamm plasmon structures the probability of spontaneous emission can be increased despite losses in metal, and theoretical analysis of experimental results suggested that the enhancement could be as high as one order of magnitude. Tamm plasmon structure with quantum dots has been fabricated and the emission pattern has been measured. Electromagnetic modes of the structure have been analyzed and modification of spontaneous emission rates has been calculated showing a good agreement with experimentally observed emission pattern.

In the quest of developing high performance electronic and optical devices and more cost effective fabrication processes of monoclinic β-Ga 2 O 3 , new growth techniques and fundamental electronic and optical properties of defects have to be explored. By heating of dissolved metallic Ga in HCl in a NH 3 and N 2 atmosphere, nano-flake films of monoclinic β-phase Ga 2 O 3 were grown as confirmed by XRD. From optical measurements, we observe two strong emissions. A red band peaking at ~2.0 eV and a UV band at ~3.8 eV. The band at ~2.0 eV is attributed to donor-acceptor pair recombination where the donor and acceptor level is suggested to be related to V O and nitrogen, respectively. By studying the dependence of the intensity of the UV band at 3.8 eV versus excitation density, a model is suggested. In the model, it is assumed that local potential fluctuations forming minima (maxima), where the carriers would be localized with a summarized band offset for conduction and valence band of 1 eV. The origin of the fluctuations is tentatively suggested to be related to micro-inclusions of different phases in the film., Competing Interests: The authors declare no competing financial interests.

We report direct experimental evidence of the collective super-radiant mode in Bragg structure containing 60 InAs monolayer-based quantum wells (QWs) periodically arranged in GaAs matrix. Time-resolved photoluminescence measurements reveal an appearance of the additional super-radiant mode, originated from coherent collective interaction of QWs. This mode demonstrates a super-linear dependence of the intensity and radiative decay rate on the excitation power. The super-radiant mode is not manifested in the case if only a small number of QWs is excited.

The influence of the surrounding cavity on the efficiency of different types of polaritonic emitters of THz radiation has been analysed. It is demonstrated that THz lasing threshold in realistic structures cannot be achieved without a THz cavity, due to destruction of polaritons via excitonic Mott transition. Even modest values of cavity quality factor (not exceeding 50) provide significant quantum efficiency.

We propose a concept of a quantum cascade laser based on transitions of bosonic quasiparticles (excitons) in a parabolic potential trap in a semiconductor microcavity. This laser would emit terahertz radiation due to bosonic stimulation of excitonic transitions. The dynamics of a bosonic cascade is strongly different from the dynamics of a conventional fermionic cascade laser. We show that populations of excitonic ladders are parity dependent and quantized if the laser operates without an external terahertz cavity.

We consider the nonlinear terahertz emission by the system of cavity polaritons in the regime of polariton lasing. To account for the quantum nature of terahertz-polariton coupling, we use the Lindblad master equation approach and demonstrate that quantum microcavities reveal a rich variety of nonlinear phenomena in the terahertz range, including bistability, short terahertz pulse generation, and terahertz switching.

We demonstrate how micromachined photonic crystals can be used to negatively refract terahertz frequency light. The photonic crystals, which are constructed from conventional dielectric materials, manipulate the incident beam via interaction with their photonic bands. Consequently, we show that different components of a broadband beam incident on the structure may be positively or negatively refracted, depending upon its frequency and that the structure can be used as an effective spectral filter of THz radiation.

Periodic incorporation of quantum wells inside a one-dimensional Bragg structure is shown to enhance coherent coupling of excitons to the electromagnetic Bloch waves. We demonstrate strong coupling of quantum well excitons to photonic crystal Bragg modes at the edge of the photonic band gap, which gives rise to mixed Bragg polariton eigenstates. The resulting Bragg polariton branches are in good agreement with the theory and allow demonstration of Bragg polariton parametric amplification.

Interface states are known to exist at the surface of an appropriately structured Bragg reflector. If such reflectors are present on the surfaces of two prisms separated by a narrow gap, the evanescently coupled interface states can interact to produce a pair of very narrow transmission lines, the separation of which can be adjusted by varying the size of the gap between the two prisms. Thus, although only a single cavity is involved, the spectral properties of the system are similar to those of a dual-cavity photonic microstructure. In addition to other potential applications, we propose that such a structure could form the basis of an adjustable beat-frequency emitter in the terahertz regime.

We report the results of simulations relating to the illumination of a structure consisting of a slab constructed from a 2-D hexagonal array of metal rods with a terahertz frequency source. As a consequence of negative refraction an essentially non-divergent beam pattern is observed. Although the results presented relate to the terahertz regime they should also be applicable at other frequencies.

We propose a new type of pass-band filter, in this case designed to operate in the terahertz frequency regime, possessing two separate passbands utilizing the distinction between positive and negative refraction in a photonic crystal prism. The prism is formed from a two-dimensional hexagonal arrangement of metallic rods. In order to understand the operation of the filter we both consider the photonic bandstructure of the associated infinite photonic structure and carry out simulations of the refraction properties of the prism using finite-difference time-domain software.

The eigenmode spectrum and transmission properties of a certain class of one-dimensional disordered photonic crystals have been studied statistically. It is shown that the relative fluctuation of the optical width of the period of the photonic crystal is a universal parameter allowing a quantitative description of the disordered photonic crystal for various models of disorder. It is shown that the tail of the density of states is characterized by a certain penetration depth and a quantitative relation between the penetration depth, the relative band gap width, and the disorder parameter is obtained. It is found that a threshold level of disorder exists, below which the density of states in the center of the photonic band gap vanishes, and the ensemble-averaged transmission coefficient does not change significantly with increasing disorder. Also, the standard deviation of the transmission coefficient is less than its mean value. Above threshold, the ensemble averaged transmission coefficient and density of states increase with the level of disorder rapidly, and the standard deviation of the transmission coefficient exceeds its mean value. A scaling formula is presented, which relates the logarithm of the transmission to the periodic refractive index modulation and the disorder.

GaAs/AlAs microcavities containing two different quantum wells have been grown and their normal mode coupling studied. We present experimental results that exhibit three-dip reflectivity spectra characteristic of three coupled oscillators. A theoretical model based on a nonlocal dielectric response and a transfer matrix method is used to model the microcavities and yields good agreement with experiment.