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17 results on '"Kaliszek, W."'

5. Growth and Characterization of (Cd, Mn)Te

Author

Kochanowska, D., primary, Witkowska-Baran, M., additional, Mycielski, A., additional, Szadkowski, A., additional, Witkowska, B., additional, Kaliszek, W., additional, Domagala, J., additional, Jakiela, R., additional, Nowakowski, P., additional, Duzynska, A., additional, Lach, P., additional, Kaminska, A., additional, Suchocki, A., additional, Reszka, A., additional, Kowalski, B. J., additional, Wojtowicz, T., additional, Wiater, M., additional, Kaminski, P., additional, Kozlowski, R., additional, Sidor, Z., additional, Juchniewicz, M., additional, and Kaminska, E., additional

Published
2013
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7. Contacts for High-Resistivity (Cd,Mn)Te Crystals

Author

Witkowska-Baran, M., primary, Mycielski, A., additional, Kochanowska, D., additional, Szadkowski, A. J., additional, Jakiela, R., additional, Witkowska, B., additional, Kaliszek, W., additional, Domagala, J., additional, Lusakowska, E., additional, Domukhovski, V., additional, Dybko, K., additional, Cui, Y., additional, and James, R. B., additional

Published
2011
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8. Very High Quality Crystals of Wide-Gap II-VI Semiconductors: What for?

Author

POLISH ACADEMY OF SCIENCES WARSAW INSTOF PHYSICS, Mycielski, A., Szadkowski, A., Kaliszek, W., Witkowska, B., POLISH ACADEMY OF SCIENCES WARSAW INSTOF PHYSICS, Mycielski, A., Szadkowski, A., Kaliszek, W., and Witkowska, B.

Abstract

A review of some of the most important applications of the wide-gap II-VI semiconductors is presented, the key parameters of the crystals for specific applications are emphasized, and the necessity of growing crystals of very high quality is substantiated. Modern methods of growth of high-quality wide-gap II-VI semiconductor crystals are shortly described. The results of the physical vapor transport method, chosen by the authors for ZnTe and CdZnTe crystals, are shown., Prepared in cooperation with the Polish Society for Crystal Growth, SPIE-The International Society for Optical Engineering in association with SPIE Poland Chapter. Pub. in Proc. SPIE, Vol. 4412 pp38-45, 2001. This article is from ADA399287 International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals Held in Zakopane, Poland on 9-12 October 2000

Published
2001

13. ZnO and ZnO:Mn crystals obtained with the chemical vapour transport method

Author

Mycielski, A., primary, Szadkowski, A., additional, Kowalczyk, L., additional, Witkowska, B., additional, Kaliszek, W., additional, Chwalisz, B., additional, Wysmołek, A., additional, Stępniewski, R., additional, Baranowski, J. M., additional, Potemski, M., additional, Witowski, A. M., additional, Jakieła, R., additional, Barcz, A., additional, Aleshkevych, P., additional, Jouanne, M., additional, Szuszkiewicz, W., additional, Suchocki, A., additional, Łusakowska, E., additional, Kamińska, E., additional, and Dobrowolski, W., additional

Published
2004
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17. Technology and Characterization of Single-Crystalline Substrates Made of ZnSe-Based Wide-Gap II–VI Semiconductor Compounds

Author

Mycielski, A., Szadkowski, A.J., Kowalczyk, L., Zieliński, M., Łusakowska, E., Witkowska, B., Kaliszek, W., J&ecedil;drzejczak, A., Adamczewska, J., Kaczor, P., and Chernyshova, M.

Abstract

Detrimental role of traces of oxygen in the growth process of the ZnSe-based wide-gap II–VI semiconductor crystals is emphasized. Adhesion, enhanced by the presence of oxygen, of the growing crystal to the walls of the quartz ampoule promotes generation of twinning and dislocations. The technology of the substrate-quality crystals, which ensures nearly complete removal of oxygen, is described. The results of characterization of the obtained large (25 mm diameter), twin-free single crystals of ZnSe, and substrate plates are presented.

Published
2002
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