135 results on '"Kajiyama, Kenji"'
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2. Amorphous-Si/crystalline-Si facet formation during Si solid-phase epitaxy near Si/SiO2 boundary.
3. Infrared radiation annealing for extended-defect reduction in As-implanted Si crystals.
4. Concentration dependence of the gain spectrum in methanol solutions of rhodamine 6G.
5. Dynamic mode interaction in multi-mode laser diodes
6. MeV-energy As+ implantation into Si: Extended-defect reduction and planar n-p-n transistor fabrication.
7. Solid-phase lateral epitaxy of chemical-vapor-deposited amorphous silicon by furnace annealing.
8. Concentration dependence of the gain spectrum in energy-transfer dye mixtures.
9. High-speed silicon avalanche photodiodes with built-in field.
10. Fabrication of Ceramic/Epoxy Photonic Crystals by Stereolithgraphy
11. Phosphorus-Implanted Glass for Radiotherapy: Effect of Implantation Energy
12. New Approach to Lowering of the Overvoltage for Oxygen Evolution on RuO2and Related Metal-Oxide Electrodes by Ion Implantation
13. Effects on spontaneous emission on dynamic characteristics of semiconductor lasers
14. Fabrication of Ceramic-Polymer Photonic Crystals by Stereolithography and Their Microwave Properties
15. Fabrication of electromagnetic crystals with a complete diamond structure by stereolithography
16. Lateral Solid-Phase Recrystallization from the Crystal Seed Selectively Formed by Excimer Laser Annealing in Ge-Ion-Implanted Amorphous Silicon Films
17. X-Ray Photoelectron Spectroscopy Characterization of Diamond Thin Film Surfaces for Electronic Device Application
18. The Calculation Formula of Self-Inductance of a Single-Layer Rhombic Coil
19. Prototyping of Epoxy/ceramic Photonic Crystals by Stereolithography.
20. Kinetics and Depth Distributions of Oxygen Implanted into Si Analyzed by the Monte Carlo Simulation of Extended TRIM
21. Measurement of the Delamination of Thin Silicon and Silicon Carbide Layers by the Multi-Wavelength Laser Ellipsometer
22. Ion Implantation and Annealing Conditions for Delamination of Silicon Layers by Hydrogen Ion Implantation
23. Preparation of glass for radiotherapy of cancer by P+ ion implantation at 100 keV
24. Preparation of radiotherapy glass by phosphorus ion implantation at 100 keV
25. SiO bond formation by oxygen implantation into silicon
26. Surface Particle Analysis of SIMOX (Separation by IMplanted OXygen) Wafers
27. Delaminations of Thin Layers by High Dose Hydrogen Ion Implantation in Silicon: Formation of Thin Silicon on Insulator Silicon Layers
28. Optical Thickness Evaluation of Separation by IMplanted OXygen (SIMOX) Wafers
29. Dislocation Density Reduction in SIMOX (Separation by Implanted Oxygen) Multi-Energy Single Implantation*1
30. Current-Path Observation in Low-Dose SIMOX (Separation by Implanted Oxygen) Buried-SiO2 Layer
31. Buried-oxide layer formation by high-dose oxygen-ion implantation into Si wafers: SIMOX (separation by implanted oxygen)
32. Phosphorus-Implanted Glass for Radiotherapy: Effect of Implantation Energy.
33. DECREASED MORTALITY AMONG RELATIVES OF PATIENTS WITH SYSTEMIC LUPUS ERYTHEMATOSUS.
34. Extended-defect reduction by uniform heating for P+-implanted Si wafers.
35. Temperature dependence of avalanche breakdown voltage in Si p-n junctions.
36. The anomalous refractive index in the ellipsometric evaluation of an inhomogeneous film
37. Novel low-temperature recrystallization of amorphous silicon by high-energy ion beam.
38. Zinc Diffusion in InxGa1-xAs
39. Surface Silicon Crystallinity and Anomalous Composition Profiles of Buried SiO2 and Si3N4 Layers Fabricated by Oxygen and Nitrogen Implantation in Silicon
40. Novel Automatic Measuring System for Resistivity Profiles in Silicon Wafers
41. Precise Profiles for Arsenic Implanted in Si and SiO2 over a Wide Implantation Energy Range (10 keV–2.56 MeV)
42. Lateral-Epitaxy of CVD a-Si over SiO2 Stripe-Area by Furnace-Annealing
43. Increased solubilization of immune complexes by the sera from ptients with Behcet's disease.
44. Genetic and environmental factors in the development of Behcet's disease.
45. Quantitative Analysis of Etching Rate Profiles for 11B+-Implanted Si3N4 Film
46. In Situ Self Ion Beam Annealing of Damage in Si during High Energy (0.53 MeV–2.56 MeV) As+ Ion Implantation
47. Increased hydrazine excretion associated with systemic lupus erythematosus
48. Orientation control of dye molecules in a liquid crystal
49. ChemInform Abstract: VAPOR PRESSURE DEPENDENCE OF THE RELATIVE COMPOSITION OF III-V MIXED CRYSTALS IN VAPOR PHASE EPITAXY
50. Novel Low Temperature (\lesssim300°C) Annealing of Amorphous Si by Scanned High Energy (∼2.5 MeV) Heavy Ion Beam
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