1. Fluorescent SiC as a new material for white LEDs
- Author
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Syväjärvi, M., Mueller, J., Sun, J. W., Grivickas, V., Ou, Y., Jokubavicius, V., Hens, P., Kaisr, M., Ariyawong, K., Gulbinas, K., Liljedahl, R., Linnarsson, Margareta K., Kamiyama, S., Wellmann, P., Spiecker, E., Ou, H., Syväjärvi, M., Mueller, J., Sun, J. W., Grivickas, V., Ou, Y., Jokubavicius, V., Hens, P., Kaisr, M., Ariyawong, K., Gulbinas, K., Liljedahl, R., Linnarsson, Margareta K., Kamiyama, S., Wellmann, P., Spiecker, E., and Ou, H.
- Abstract
Current III-V-based white light-emitting diodes (LEDs) are available. However, their yellow phosphor converter is not efficient at high currents and includes rare-earth metals, which are becoming scarce. In this paper, we present the growth of a fluorescent silicon carbide material that is obtained by nitrogen and boron doping and that acts as a converter using a semiconductor. The luminescence is obtained at room temperature, and shows a broad luminescence band characteristic of donor-to-acceptor pair recombination. Photoluminescence intensities and carrier lifetimes reflect a sensitivity to nitrogen and boron concentrations. For an LED device, the growth needs to apply low-off-axis substrates. We show by ultra-high-resolution analytical transmission electron microscopy using aberration-corrected electrons that the growth mechanism can be stable and that there is a perfect epitaxial relation from the low-off-axis substrate and the doped layer even when there is step-bunching., QC 20120504
- Published
- 2012
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