171 results on '"Kageshima, H."'
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2. Growth and low-energy electron microscopy characterizations of graphene and hexagonal boron nitride
3. Effect of Stress on Pattern-Dependent Oxidation of Silicon Nanostructures
4. The Role of Tip Atomic and Electronic Structure in Scanning Tunneling Microscopy and Spectroscopy
5. Significance of the interface regarding magnetic properties of manganese nanosilicide in silicon
6. The Role of Tip Atomic and Electronic Structure in Scanning Tunneling Microscopy and Spectroscopy
7. Electronic Structure and Reconstruction of Si(100) Surfaces
8. Mechanism of Reconstruction of Si(100) Surfaces
9. Computational Physics Approach to Scanning Tunneling Microscopy and Spectroscopy
10. Electronic and surface properties of H-terminated diamond surface affected by NO 2 gas
11. Two-dimensional emission patterns of secondary electrons from graphene layers formed on SiC(0 0 0 1)
12. Instability of steps during Ga deposition on Si(1 1 1)
13. First-principles investigations of nitrogen-doping effects on defect aggregation processes in Czochralski Si
14. Observation of Si emission during thermal oxidation of Si(0 0 1) with high-resolution RBS
15. InGaAs/GaAs photorefractive multiple quantum well device in quantum confined Stark geometry
16. First-principles study of strain effects on Mn in Si
17. Mechanism of oxide deformation during silicon thermal oxidation
18. Theoretical study of vacancy supersaturation during silicon crystal growth and nitrogen-doping effects
19. Photorefractive InGaAs/GaAs multiple quantum wells in the Franz-Keldysh geometry
20. First-Principles Study Of Photoluminescence From Silicon/Silicon-Oxide Interfaces
21. First-Principles Study of Interfacial Reaction Atomic Process at Silicon Oxidation
22. Formation of stable N–V–O complexes in Si
23. The Role of Tip Atomic and Electronic Structure in Scanning Tunneling Microscopy and Spectroscopy
24. The Role of Tip Atomic and Electronic Structure in Scanning Tunneling Microscopy and Spectroscopy
25. Mechanism of Reconstruction of Si(100) Surfaces
26. Electronic Structure and Reconstruction of Si(100) Surfaces
27. Theoretical Investigation of Nitrogen-Doping Effect on Native Defect Aggregation Processes in Silicon
28. Excitonic resonant photorefractive devices around 1.06 μm
29. Theory of thermal Si oxide growth rate taking into account interfacial Si emission effects
30. First-Principles Study on Shape Degradation during Oxidation Process for Three-Dimensional Structure Devices
31. Theory of Electron Attachment of Van der Waals Microclusters
32. Guiding principles for the fabrication of V-MOSFETs based on a Si emission model
33. Reaction mechanisms at 4H-SiC/SiO2 interface during wet SiC oxidation
34. Theoretical Study of Supporting Effect on Vacancies in MoS2
35. Observation of Si emission during thermal oxidation of Si(001) with high-resolution RBS
36. First Principles Calculation of Charged Vacancies in Single-Layer Molybdenum Disulfide
37. Theoretical Study of Multiatomic Vacancies in Hexagonal Boron Nitride
38. First-Principles Study on Hydrogen Annealing Effect in Si/SiO2 Interface by Thermal Oxidation
39. Thickness-dependent appearance of ferromagnetism in Pd(100) ultrathin films
40. Effect of hydrogen annealing on electronic transport properties of quasi-free-standing monolayer graphene
41. Self organization of a hexagonal network of quasi-free-standing monolayer graphene nanoribbons
42. Theory of Graphene on SiC(11-20)a Substrate
43. The physics of epitaxial graphene on SiC(0001)
44. Growth and electronic transport properties of epitaxial graphene on SiC
45. Electrical Characterization of Bilayer Graphene Formed by Hydrogen Intercalation of Monolayer Graphene on SiC(0001)
46. Theory on Initial Stage of Epitaxial Graphene Growth on SiC(0001)
47. Strong Stark effect in electroluminescence from phosphorous-doped silicon-on-insulator metal-oxide-semiconductor field-effect transistors
48. Atomic Structure of Epitaxial Graphene Islands on SiC(0001) Surfaces and their Magnetoelectric Effects
49. Strong Stark effect of electroluminescence in thin SOI MOSFETs
50. Observation of bandgap in epitaxial bilayer graphene field effect transistors
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