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Construction of the Korea superconducting tokamak advanced research (KSTAR) tokamak is in its final phase. For the long-pulse KSTAR discharges, the ion cyclotron range of frequencies (ICRF) and neutral beam injection (NBI) heating systems are expected to play important roles through a selective heating of ions and electrons, control of the plasma pressure and current profiles, a core fuelling and beam diagnostics for the KSTAR. In addition, the ICRF system is expected to be used for possible discharge cleaning and assisting in the tokamak startup. In this paper, the recent progress in the development of the ICRF and the NBI heating systems is described. The four-strap ICRF antenna has been successfully tested for a voltage up to 41 kV for a pulse length of 300 s (to 46 kV for 20 s) in a test chamber. A prototype KSTAR NBI system has been developed. At present, the system has successfully produced a 1 MW beam power for 200 s and a 3.5 MW output beam power for 4 s.

We designed a single-arm, open label phase II study to determine the efficacy and toxicity of the combination of pazopanib with CapeOx (capecitabine and oxaliplatin) in metastatic /recurrent advanced gastric cancer (AGC) patients. Previously untreated AGC patients received capecitabine (850 mg/m2 bid, day 1–14) plus oxaliplatin (130 mg/m2, day 1) in combination with pazopanib (800 mg, day 1–21) every three weeks. Treatment was continued until progression of the disease or intolerable toxicity was observed. In all, 66 patients were treated with pazopanib plus CapeOx. The median age of the patients was 51.5 years (range, 23.0–77), and the median ECOG performance status was 1 (0–1). Among all 66 patients, one complete response and 37 partial responses were observed (overall response rate, 62.4%; 95% confidence interval (CI), 45.7–73.5% accounting for the 2-stage design of this trial). Stable disease was observed in 23 patients (34.8%), revealing a 92.4% disease control rate. The median progression free survival and overall survival were 6.5 months (95% CI, 5.6–7.4) and 10.5 months (95% CI, 8.1–12.9), respectively. Thirty-four patients (51.5%) experienced a treatment-related toxicity of grade 3 or more. The most common toxicities of grade 3 or more were neutropenia (15.1%), anemia (10.6%), thrombocytopenia (10.6%), anorexia (7.6%), nausea (3.0%), and vomiting (3.0%). There were no treatment-related deaths. The combination of pazopanib and CapeOx showed moderate activity and an acceptable toxicity profile as a first-line treatment in metastatic / recurrent AGC patients (ClinicalTrials.gov NCT01130805).

We investigate the influence of nitridation on the growth of GaN films. We present undoped α- and β-GaN on 3C-SiC coated Si (0 0 1) with and without nitridation, respectively, using radio frequency plasma assisted molecular beam epitaxy. In the case without nitridation, the RHEED (2 × 2) streak pattern at both [1 0 0] and [1 1 0] azimuths shows that the high-quality zinc blende GaN films are grown. The X-ray diffraction (XRD) shows that (0 0 2) zinc blende GaN is observed at 2 θ = 39.53°. At 10 K, PL of the zinc blende GaN is dominated by band edge emission at 3.362 eV. On the other hand, α-GaN films are obtained it nitridation that exhibit the (0 0 0 2) wurtzite GaN peak at 34.25° in the XRD measurement.

Nitrogen implantation was applied to Zircaloy-4 sheet to improve corrosion resistance at 100 and 120 keV by varying the ion dose of nitrogen from 1 × 10 17 to 1 × 10 18 ions cm −2 . The influence of nitrogen dose and substrate temperature on the corrosion resistance of the alloy were examined by measuring potentiodynamic anodic polarization curves in deaerated NaCl solution at 80 °C. The corrosion resistance of Zircaloy-4 was significantly improved with nitrogen implantation, as confirmed by the distinct increase in the pitting potential from 235 mV (vs. saturated calomel electrode, (SCE)) for the unimplanted alloy to 685 mV(SCE) for the alloy implanted with 10 18 ions cm −2 , and by the gradual decrease in the passive current density with dose. This improvement in corrosion resistance of the implanted alloy is attributed to the formation of ZrN and ZrO 2 during the implantation. Corrosion resistance of nitrogen implanted Zircaloy-4 was found to be very sensitive to the substrate temperature; the maximum resistance to localized corrosion of the implanted alloy was obtained at about 293 °C.

Summary form only given, as follows. A prototype KSTAR Neural Beam Injection (NBI) system has been constructed. The NBI system is composed of a large vacuum chamber (3 m /spl times/ 4 m /spl times/ 5 m) for installing beam line components, a neutralizing gas cell, a bending magnet, an ion dump, a calorimeter, cryosorption panels (0.6 million litter/sec) for vacuum pumping, machine control & monitoring modules (PXI based), diagnostics systems for beam parameter measurements, and water circulation systems for beam line cooling. The performance of the prototype KSTAR NBI system with an ion source including needed power supplies for the source operation, which was developed also as a prototype for the KSTAR NBI system, is described.

A 90 nm generation logic technology with Cu/low-k interconnects is reported. 50 nm transistors are employed using gate oxide 1.3 nm in thickness and operating at 1.0 V. High speed transistors have drive currents of 870 /spl mu/A/pm and 360 /spl mu/A//spl mu/m for NMOS and PMOS respectively, while generic transistors have currents of 640 /spl mu/A//spl mu/m and 260 /spl mu/A//spl mu/m respectively. Low power process using high-k gate dielectrics and SOI process are also provided in this technology. The low-k SiOC material with 2.9 in the k value is used for 9 layers of dual damascene Cu/low-k interconnects. The effective k (k/sub eff/) value of interconnect is about 3.6. Fully working 6-T SRAM cell with an area of 1.1 /spl mu/m/sup 2/ and SNM value of 330 mV is obtained. For MIM capacitor, voltage coefficient of capacitance is less than 20 ppm/V.