1. Advances in HEMT Technology and Applications
- Author
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P.C. Chao, K.H.G. Dub, P.M. Smith, J.M. Ballingall, Luke F. Lester, and B.R. Lee
- Subjects
Engineering ,business.industry ,Transistor ,Electrical engineering ,Power performance ,High-electron-mobility transistor ,Noise figure ,Noise (electronics) ,Gallium arsenide ,Power (physics) ,law.invention ,chemistry.chemical_compound ,chemistry ,law ,business ,Power density - Abstract
High electron mobility transistors (HEMTs) have demonstrated unsurpassed transistor performance in the millimeter-wave range--at 60 GHz, results include a minimum noise figure of 2.3 dB with 4.0 dB associated gain, maximum small-signal gain of 11.7 dB, output power of 50 mW, power density of 0.43 W/mm and maximum power-added efficiency of 28%. The principles of HEMT operation and design are described, followed by a summary of the current state-of-the-art in noise and power performance, and discussion of several applications.
- Published
- 1987
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