1. Electron Mobility Calculation of Diluted III–V-Nitrides Alloys
- Author
-
Ahmed Rebey, C. Bilel, and K. Chakir
- Subjects
010302 applied physics ,Range (particle radiation) ,Electron mobility ,Materials science ,Band gap ,Analytical chemistry ,chemistry.chemical_element ,02 engineering and technology ,Electron ,Nitride ,Conductivity ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Nitrogen ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,Effective mass (solid-state physics) ,chemistry ,0103 physical sciences ,0210 nano-technology - Abstract
A 10-band k.p model has been adopted to study the electronic transport properties of dilute III–V-nitride alloys. The N incorporation into III–V material causes a significant band gap reduction. The shapes of electrons effective mass is investigated as a function of N concentration. The mobility of electron $${{\mu }_{e}}$$ in GaNxAs1 – x, InNxP1 –x, InNxAs1 –x and InNxSb1 –x shows a significant decrease for nitrogen composition less than 1%. In the range 1–5% observed in InNxP1 –x, InNxAs1 –x and InNxSb1 –x, however, there is a slow increase. In contrast the modification of electrons mobility affects profoundly the electron conductivity. The variation of electron conductivity as function of N composition is shown as well.
- Published
- 2019