1. Dynamic Atomic Layer Epitaxy of InN on/in GaN and Its Application for Fabricating Ordered Alloys in Whole III-N System
- Author
-
K. Kusakabe and A. Yoshikawa
- Subjects
010302 applied physics ,Fabrication ,Materials science ,Nanostructure ,business.industry ,Nanotechnology ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Epitaxy ,01 natural sciences ,Atomic units ,0103 physical sciences ,Atomic layer epitaxy ,Optoelectronics ,Metalorganic vapour phase epitaxy ,0210 nano-technology ,business ,Stoichiometry ,Molecular beam epitaxy - Abstract
A unique epitaxial process, dynamic atomic layer epitaxy (D-ALEp), has been proposed and developed to fabricate coherent monolayer-InN on/in GaN-matrix nanostructures. The D-ALEp utilizes self-limiting and self-ordering surface processes but differs from typical atomic layer epitaxy, because the growth front in D-ALEp dynamically changes stoichiometry or metal coverage through adsorption/desorption of adatoms at a high-temperature regime. The growth front is precisely traced by in situ spectroscopic ellipsometry monitoring, where atomic scale surface behavior is easily/accurately understood by our smart style of an imaginary part of pseudodielectric function normalized by an adlayer thickness (Δ〈ɛ2〉), instead of complicated spectral analysis. In this chapter, the authors briefly introduce the D-ALEp and also our prime objective to establish ordered alloys in a whole III-nitride system. Subsequently, the authors discuss growth kinetics of monolayer-InN on/in GaN-matrix by the D-ALEp which has been developed in molecular beam epitaxy (MBE) at the beginning to overcome highly mismatched problems in an InN/GaN system, and then investigated in metalorganic vapor phase epitaxy (MOVPE) as well. Finally, the authors represent an extension of the D-ALEp toward fabrication of III-N ordered alloys. The authors have demonstrated InN/GaN ordered alloys grown by MBE and (InN/GaN)-layer/pn-GaN solar cells grown by MOVPE. The authors further discuss a future prospect of AlN/GaN and AlN/InN ordered alloys for potential application to high electron mobility transistors (HEMTs).
- Published
- 2017
- Full Text
- View/download PDF