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Highlights The constructions under internal and external driving forces were introduced and compared with each other. The physicochemical properties were analyzed for the assessment of crystalline quality and photoelectric characteristics. The photocatalytic applications, mechanisms, and developments of the core-shell semiconductor-graphene nanoarchitectures were illustrated in detail.

Gallium nitride (GaN)‐based semiconductor laser diodes (LDs) have garnered significant attention due to their promising applications. However, high‐power LDs face serious degradation issues that limit their practical use. This study investigates the degradation factors of 437 nm and 6.3 W LDs by comparing light–current–voltage (L–I–V) characteristics, transmission electron microscopy (TEM), cathodoluminescence (CL), and secondary ion mass spectroscopy (SIMS) before and after 1000‐h aging. The diffusion of mirror coating from the resonant cavity surface is identified as a key factor contributing to high‐power LD degradation, which has not been reported in milliwatt‐level LDs. Meanwhile, the mechanisms behind the LD degradation are profiled and summarized together with the diffusion and other factors. On basis of the mechanism exploration, an anti‐aging technology for high‐power GaN‐based LDs is developed by using aluminum nitride for passivation layer and sapphire materials for mirror film. This anti‐aging technology has been verified, and a nearly ten‐time degradation suppression is achieved from 1000 h. This study elucidates the degradation mechanisms of high‐power GaN LDs and provides an effective technology to extend their lifespan, thereby prompting the practical applications of high‐power LDs.

Abstract The silicon carbide (SiC) crystal growth is a multiple‐phase aggregation process of Si and C atoms. With the development of the clean energy industry, the 4H‐SiC has gained increasing attention as it is an ideal material for new energy automobiles and optoelectronic devices. The aggregation process is normally complex and dynamic due to its distinctive formation energy, and it is hard to study and trace back in a non‐destructive and comprehensive way. Here, this work developed a non‐destructive and deep learning‐enhanced characterization method of 4H‐SiC material, which was based on micro‐CT scanning, the verification of various optical measurements, and the convolutional neural network (ResNet‐50 architecture). Harmful defects at the micro‐level, polytypes, micropipes, and carbon inclusions could be identified and orientated with more than 96% high performance on both accuracy and precision. The three‐dimensional visual reconstruction with quantitative analyses provided a vivid tracing back of the SiC aggregation process. This work demonstrated a useful tool to understand and optimize the SiC growth technology and further enhance productivity.

Deep-ultraviolet (DUV) disinfection technology provides an expeditious and efficient way to suppress the transmission of coronavirus disease 2019 (COVID-19). However, the influences of viral variants (Delta and Omicron) and low temperatures on the DUV virucidal efficacy are still unknown. Here, we developed a reliable and uniform planar light source comprised of 275-nm light-emitting diodes (LEDs) to investigate the effects of these two unknown factors and delineated the principle behind different disinfection performances. We found the lethal effect of DUV at the same radiation dose was reduced by the cryogenic environment, and a negative-U large-relaxation model was used to explain the difference in view of the photoelectronic nature. The chances were higher in the cryogenic environment for the capture of excited electrons within active genetic molecules back to the initial photo-ionised positions. Additionally, the variant of Omicron required a significantly higher DUV dose to achieve the same virucidal efficacy, and this was thanks to the genetic and proteinic characteristics of the Omicron. The findings in this study are important for human society using DUV disinfection in cold conditions (e.g., the food cold chain logistics and the open air in winter), and the relevant DUV disinfection suggestion against COVID-19 is provided.

This study delves into a profound exploration, using simple yet effective Monte Carlo ray‐tracing simulations, of the influence of the refractive indices of multiple quantum wells (MQWs) and p‐type electron blocking layer (p‐EBL) on the photon propagation and subsequent light extraction behavior in AlGaN‐based ultraviolet‐C (UVC) light‐emitting diodes (LEDs), covering both transverse‐electric (TE) and transverse‐magnetic (TM) polarized light. Remarkably, the refractive index contrasts at the heterointerfaces of p‐EBL/MQWs/n‐AlGaN have a relatively minor impact on the extraction efficiency of TE‐polarized light but exert a significant influence on TM‐polarized light. This discrepancy arises from the substantial effect of total internal reflection at these heterointerfaces on the propagation of photons emitted at large angles. Thus, this observation elucidates the oversight of photon propagation in the conventional design of MQWs and p‐EBL in AlGaN‐based UVA and UVB LEDs, where TE‐polarized emission predominates. Building upon simulation results, a highly effective strategy for extracting TM‐polarized light in AlGaN‐based UVC LEDs is further demonstrated by combining refractive index engineering with inclined sidewalls. The findings suggest refractive index engineering can serve as a novel design parameter for AlGaN‐based UVC LEDs dominated by TM‐polarized emission, expanding the range of techniques available for enhancing device performance.

Abstract Memristors with nonvolatile storage performance and simulated synaptic functions are regarded as one of the critical devices to overcome the bottleneck in traditional von Neumann computer architecture. 2D van der Waals heterostructures have paved a new way for the development of advanced memristors by integrating the intriguing features of different materials and offering additional controllability over their optoelectronic properties. Herein, planar memristors with both electrical and optical tunability based on ReS2/WS2 van der Waals heterostructure are demonstrated. The devices show unique unipolar nonvolatile behavior with high Roff/Ron ratio of up to 106, desirable endurance, and retention, which are superior to pure ReS2 and WS2 devices. When decreasing the channel length, the set voltage can be notably reduced while the high Roff/Ron ratios are retained. By introducing electrostatic doping through the gate control, the set voltage can be tailored in a wide range from 4.50 to 0.40 V. Furthermore, biological synaptic functions and plasticity, including spike rate‐dependent plasticity and paired‐pulse facilitation, are successfully realized. By employing optical illumination, resistive switching can also be modulated, which is dependent on the illumination energy and power. A mechanism related to the interlayer charge transfer controlled by optical excitation is revealed.

Abstract Structure has been considered to play an important role in photocatalytic performance of the semiconductors, but the intrinsic factors were rarely revealed. Herein, ZnO nanomaterials in the structures of thin film, nanowire array and nanosheet array were synthesized, and their structural characteristics, optical properties, photocurrent response and photocatalytic efficiency were compared with each other for illustrating the issue. The photoluminescence intensity decreased in the order of nanosheets, thin film and nanowires for improved lifetime of the photoexcited charges. The absorption of the nanosheets and nanowires improved obviously in the visible range with a redshift of the absorption edge than that of the thin film. The nanowires possessed the highest response current of 82.65 μA at a response time of 2.0 ms in a sensitivity of 87.93 at the light frequency of 1 Hz, and gained the largest catalytic efficiency of 2.45 μg/cm2 h for the methylene blue degradation in UV light. Nevertheless, the improvement of catalytic efficiency of the nanosheets (up to 42.4%) was much larger than that of nanowires (5.7%) and thin film (2.6%) for the Au coating. The analysis revealed that the photocatalytic efficiency of the ZnO nanomaterials was modulated by the structure as it contained different surface area, roughness, defect and doping states, vacancies, polar and non-polar crystalline faces, which would provide structural design of semiconductor nanomaterials for the photoelectric and photocatalytic applications.

GaN heterostructure is a promising material for next-generation optoelectronic devices, and Indium gallium nitride (InGaN) has been widely used in ultraviolet and blue light emission. However, its applied potential for longer wavelengths still requires exploration. In this work, the ultra-thin InN/GaN superlattices (SL) were designed for long-wavelength light emission and investigated by first-principles simulations. The crystallographic and electronic properties of SL were comprehensively studied, especially the strain state of InN well layers in SL. Different strain states of InN layers were applied to modulate the bandgap of the SL, and the designed InN/GaN heterostructure could theoretically achieve photon emission of at least 650 nm. Additionally, we found the SL had different quantum confinement effects on electrons and holes, but an efficient capture of electron-hole pairs could be realized. Meanwhile, external forces were also considered. The orbital compositions of the valence band maximum (VBM) were changed with the increase in tensile stress. The transverse electric (TE) mode was found to play a leading role in light emission in normal working conditions, and it was advantageous for light extraction. The capacity of ultra-thin InN/GaN SL on long-wavelength light emission was theoretically investigated.

Abstract Achieving high-efficient spin injection in semiconductors is critical for developing spintronic devices. Although a tunnel spin injector is typically used, the construction of a high-quality tunnel barrier remains a significant challenge due to the large lattice mismatch between oxides and semiconductors. In this work, van der Waals h-BN films with the atomically flat interface were engaged as the tunnel barrier to achieve high spin polarization in GaN, and the spin injection and transport in GaN were investigated systematically. Based on the Hanle precession and magnetic resistance measurements, CoFeB was determined as an optimal spin polarizer, bilayer h-BN tunnelling barrier was proven to yield a much higher spin polarization than the case of monolayer, and appropriate carrier concentration as well as higher crystal equality of n-GaN could effectively reduce the defect-induced spin scattering to improve the spin transport. The systematic understanding and the high efficiency of spin injection in this work may pave the way to the development of physical connotations and the applications of semiconductor spintronics.

Asymmetric n/p conductivity is a fundamental difficulty in wide bandgap semiconductors. Here the authors demonstrate a concept of orbital level engineering through sacrificial impurity coupling to achieve n-type conductivity (ne ~1016 cm-3) in hexagonal BN.

Abstract A systematic study was carried out for strain-induced microscale compositional pulling effect on the structural and optical properties of high Al content AlGaN multiple quantum wells (MQWs). Investigations reveal that a large tensile strain is introduced during the epitaxial growth of AlGaN MQWs, due to the grain boundary formation, coalescence and growth. The presence of this tensile strain results in the microscale inhomogeneous compositional pulling and Ga segregation, which is further confirmed by the lower formation enthalpy of Ga atom than Al atom on AlGaN slab using first principle simulations. The strain-induced microscale compositional pulling leads to an asymmetrical feature of emission spectra and local variation in emission energy of AlGaN MQWs. Because of a stronger three-dimensional carrier localization, the area of Ga segregation shows a higher emission efficiency compared with the intrinsic area of MQWs, which is benefit for fabricating efficient AlGaN-based deep-ultraviolet light-emitting diode.

We demonstrated high-brightness InGaN/GaN green light emitting diodes (LEDs) with ex-situ sputtered stress-manipulated AlNO buffer on 4-inch patterned sapphire substrates. The lattice constant of the AlNO buffer was adjusted by oxygen flow. As a result, the dislocation density and the in-plane compressive stress caused by lattice mismatch were greatly reduced, while the interface quality of the InGaN/GaN multiple quantum wells and the uniformity of the indium composition were greatly improved. At 20A/cm2, the external quantum efficiency and wall plug efficiency of the 526.4-nm-green LEDs grown on the sputtered AlNO buffer reached 46.1% and 41.9%, which were both higher than reported values.

Abstract The fabrication of small-scale electronics usually involves the integration of different functional materials. The electronic states at the nanoscale interface plays an important role in the device performance and the exotic interface physics. Photoemission spectroscopy is a powerful technique to probe electronic structures of valence band. However, this is a surface-sensitive technique that is usually considered not suitable for the probing of buried interface states, due to the limitation of electron-mean-free path. This article reviews several approaches that have been used to extend the surface-sensitive techniques to investigate the buried interface states, which include hard X-ray photoemission spectroscopy, resonant soft X-ray angle-resolved photoemission spectroscopy and thickness-dependent photoemission spectroscopy. Especially, a quantitative modeling method is introduced to extract the buried interface states based on the film thickness-dependent photoemission spectra obtained from an integrated experimental system equipped with in-situ growth and photoemission techniques. This quantitative modeling method shall be helpful to further understand the interfacial electronic states between functional materials and determine the interface layers.

Abstract Electronic textiles have been regarded as the basic building blocks for constructing a new generation of wearable electronics. However, the electronization of textiles often changes their original properties such as color, softness, glossiness, or flexibility. Here a rapid room‐temperature fabrication method toward conductive colorful threads and fabrics with Ag‐coated Cu (Cu‐Ag) nanonets is demonstrated. Cu–Ag core–shell nanowires are produced through a one‐pot synthesis followed by electroless deposition. According to the balance of draining and entraining forces, a fast dip‐withdraw process in a volatile solution is developed to tightly wrap Cu–Ag nanonets onto the fibers of thread. The modified threads are not only conductive, but they also retain their original features with enhanced mechanical stability and dry‐wash durability. Furthermore, various e‐textile devices are fabricated such as a fabric heater, touch screen gloves, a wearable real‐time temperature sensor, and warm fabrics against infrared thermal dissipation. These high quality and colorful conductive textiles will provide powerful materials for promoting next‐generation applications in wearable electronics.

Abstract Here we report a comprehensive numerical study for the operating behavior and physical mechanism of nitride micro-light-emitting-diode (micro-LED) at low current density. Analysis for the polarization effect shows that micro-LED suffers a severer quantum-confined Stark effect at low current density, which poses challenges for improving efficiency and realizing stable full-color emission. Carrier transport and matching are analyzed to determine the best operating conditions and optimize the structure design of micro-LED at low current density. It is shown that less quantum well number in the active region enhances carrier matching and radiative recombination rate, leading to higher quantum efficiency and output power. Effectiveness of the electron blocking layer (EBL) for micro-LED is discussed. By removing the EBL, the electron confinement and hole injection are found to be improved simultaneously, hence the emission of micro-LED is enhanced significantly at low current density. The recombination processes regarding Auger and Shockley–Read–Hall are investigated, and the sensitivity to defect is highlighted for micro-LED at low current density. Synopsis: The polarization-induced QCSE, the carrier transport and matching, and recombination processes of InGaN micro-LEDs operating at low current density are numerically investigated. Based on the understanding of these device behaviors and mechanisms, specifically designed epitaxial structures including two QWs, highly doped or without EBL and p-GaN with high hole concentration for the efficient micro-LED emissive display are proposed. The sensitivity to defect density is also highlighted for micro-LED.

Abstract Two-dimensional Janus materials have great potential for the applications in spintronic devices due to their particular structures and novel characteristics. However, they are usually non-magnetic in nature. Here, different transition metals (TMs: Co, Fe, Mn, Cr, and V) adsorbed WSSe frameworks are constructed, and their structures and magnetic properties are comprehensively investigated by first-principles calculations. The results show that the top of W atom is the most stable absorption site for all the TM atoms, and all the systems exhibit magnetism. Moreover, their magnetic properties significantly depend on the adsorbed elements and the adsorbent chalcogens. A maximal total magnetic moment of 6 μB is obtained in the Cr-adsorbed system. The induced magnetism from S-surface-adsorption is always stronger than that for the Se-surface-adsorption due to its larger electrostatic potential. Interestingly, the easy magnetization axis in the Fe-adsorbed system switches from the in-plane to the out-of-plane when the adsorption surface changes from Se to S surface. The mechanism is analyzed in detail by Fe-3d orbital-decomposed density of states. This work provides a guidance for the modification of magnetism in low-dimensional systems.

This paper review recent advances in ultraviolet LEDs and summarize that multiple physical fields could built a toolkit for effectively controlling and tailoring crucial properties of nitride quantum structures.

Abstract Here, an engineered tunneling layer enhanced photocurrent multiplication through the impact ionization effect was proposed and experimentally demonstrated on the graphene/silicon heterojunction photodetectors. With considering the suitable band structure of the insulation material and their special defect states, an atomic layer deposition (ALD) prepared wide-bandgap insulating (WBI) layer of AlN was introduced into the interface of graphene/silicon heterojunction. The promoted tunneling process from this designed structure demonstrated that can effectively help the impact ionization with photogain not only for the regular minority carriers from silicon, but also for the novel hot carries from graphene. As a result, significantly enhanced photocurrent as well as simultaneously decreased dark current about one order were accomplished in this graphene/insulation/silicon (GIS) heterojunction devices with the optimized AlN thickness of ~15 nm compared to the conventional graphene/silicon (GS) devices. Specifically, at the reverse bias of −10 V, a 3.96-A W−1 responsivity with the photogain of ~5.8 for the peak response under 850-nm light illumination, and a 1.03-A W−1 responsivity with ∼3.5 photogain under the 365 nm ultraviolet (UV) illumination were realized, which are even remarkably higher than those in GIS devices with either Al2O3 or the commonly employed SiO2 insulation layers. This work demonstrates a universal strategy to fabricate broadband, low-cost and high-performance photo-detecting devices towards the graphene-silicon optoelectronic integration.

Abstract Carrier transport behavior in the perovskite light absorption layer significantly impacts the performance of perovskite solar cells (PSCs). In this work, reduced carrier recombination losses were achieved by the design of a band structure in perovskite materials. An ultrathin (PbI2/PbBr2)n film with a gradient thickness ratio was deposited as the lead halide precursor layer by a thermal evaporation method, and PSCs with a gradient band structure in the perovskite absorption layer were fabricated by a two-step method in ambient atmosphere. For comparison, PSCs with homogeneous perovskite materials of MAPbI3 and MAPbI x Br3 − x were fabricated as well. It is found that the gradient type-II band structure greatly reduces the carrier lifetime and enhances the carrier separation efficiency. As a result, the PSCs with a gradient band structure exhibit an average power conversion efficiency of 17.5%, which is 1–2% higher than that of traditional PSCs. This work provides a novel method for developing high-efficiency PSCs.

Abstract Controllable optical properties are important for optoelectronic applications. Based on the unique properties and potential applications of two-dimensional Janus WSSe, we systematically investigate the strain-modulated electronic and optical properties of WSSe bilayer through the first-principle calculations. The preferred stacking configurations and chalcogen orders are determined by the binding energies. The bandgap of all the stable structures are found sensitive to the external stress and could be tailored from semiconductor to metallicity under appropriate compressive strains. Atomic orbital projected energy bands reveal a positive correlation between the degeneracy and the structural symmetry, which explains the bandgap evolutions. Dipole transition preference is tuned by the biaxial strain. A controllable transformation between anisotropic and isotropic optical properties is achieved under an around − 6%~− 4% critical strain. The strain controllable electronic and optical properties of the WSSe bilayer may open up an important path for exploring next-generation optoelectronic applications.

This study presents broadband ultraviolet photodetectors (BUV PDs) based on Ga2O3/GaN core-shell micro-nanorod arrays with excellent performance. Micro-Nanoarchitectonics of Ga2O3/GaN core-shell rod arrays were fabricated with high-temperature oxidization of GaN micro-nanorod arrays. The PD based on the microrod arrays exhibited an ultrahigh responsivity of 2300 A/W for 280 nm at 7 V, the peak responsivity was approximately 400 times larger than those of the PD based on the planar Ga2O3/GaN film. The responsivity was over 1500 A/W for the 270–360 nm band at 7 V. The external quantum efficiency was up to 1.02 × 106% for 280 nm. Moreover, the responsivity was further increased to 2.65 × 104 A/W for 365 nm and over 1.5 × 104 A/W for 270–360 nm using the nanorod arrays. The physical mechanism may have been attributed to the large surface area of the micro-nanorods coupled with the Ga2O3/GaN heterostructure, which excited more photogenerated holes to be blocked at the Ga2O3 surface and Ga2O3/GaN interface, resulting in a larger internal gain. The overall high performance coupled with large-scale production makes it a promising candidate for practical BUV PD.

The SrTiO3(STO)/ZnO heterointerface, which is widely used in the fabrication of novel optoelectronic devices, is a classical system combining functional perovskite oxides and wurtzite-structure semiconductor materials. The electronic structure of the heterointerface often plays a significant role in controlling the functions of novel devices. In this study, the electronic structure was explored using in situ photoemission spectroscopy and X-ray absorption spectroscopy. X-ray diffraction results showed the coexistence of (111)STO and (011)STO orientations for the STO film deposited on the ZnO-(0001-) substrate via pulsed laser deposition. High-resolution transmission electron microscopic results revealed two types of polar interfaces: [112-][101-](111)STO//[12-10][101-0](0001-)ZnO and [111][21-1-](011)STO//[102-1][101-0](0001-)ZnO. In situ photoemission spectroscopic results revealed downward band bending and the transformation of the valence states of Ti from 4+ to 3+, with extra electrons transferring to the hybridization states between O 2p and Ti t2g orbitals at the polar-to-polar STO/ZnO interface. We propose that the polar discontinuity drives the electron transfer to the STO/ZnO interface during the growth process. This study provides insight into the electronic structure of the STO/(0001-)ZnO heterointerface.

Fabricating Zn1−xMgxO films with a high Mg content is key to their applications in deep-ultraviolet optoelectronic devices. In this work, we report the preparation of Zn1−xMgxO films on (12̄10)-ZnO substrates by molecular beam epitaxy. The Zn1−xMgxO/(12̄10)-ZnO structure is revealed by x-ray diffraction and high-resolution transmission electron microscopy. Remarkably, no cubic MgO is observed for films with 74.6% Mg content; the film shows mainly the wurtzite structure with some intermediate phases at the interface. Photoluminescence spectra show that the film exhibits good optoelectronic properties with a bandgap of 4.6 eV. This work provides a new avenue for the fabrication of deep-ultraviolet Zn1−xMgxO films.

Abstract In this work, three-dimensional (3D) CoMoSe4 nanosheet arrays on network fibers of a carbon cloth denoted as CoMoSe4@C converted directly from CoMoO4 nanosheet arrays prepared by a hydrothermal process followed by the plasma-assisted selenization at a low temperature of 450 °C as an anode for sodium-ion battery (SIB) were demonstrated for the first time. With the plasma-assisted treatment on the selenization process, oxygen (O) atoms can be replaced by selenium (Se) atoms without the degradation on morphology at a low selenization temperature of 450 °C. Owing to the high specific surface area from the well-defined 3D structure, high electron conductivity, and bi-metal electrochemical activity, the superior performance with a large sodium-ion storage of 475 mA h g−1 under 0.5–3 V potential range at 0.1 A g−1 was accomplished by using this CoMoSe4@C as the electrode. Additionally, the capacity retention was well maintained over 80 % from the second cycle, exhibiting a satisfied capacity of 301 mA h g−1 even after 50 cycles. The work delivered a new approach to prepare a binary transition metallic selenide and definitely enriches the possibilities for promising anode materials in SIBs with high performances.

Abstract Light manipulation has drawn great attention in photodetectors towards the specific applications with broadband or spectra-selective enhancement in photo-responsivity or conversion efficiency. In this work, a broadband light regulation was realized in photodetectors with the improved spectra-selective photo-responsivity by the optimally fabricated dielectric microcavity arrays (MCAs) on the top of devices. Both experimental and theoretical results reveal that the light absorption enhancement in the cavities is responsible for the improved sensitivity in the detectors, which originated from the light confinement of the whispering-gallery-mode (WGM) resonances and the subsequent photon coupling into active layer through the leaky modes of resonances. In addition, the absorption enhancements in specific wavelength regions were controllably accomplished by manipulating the resonance properties through varying the effective optical length of the cavities. Consequently, a responsivity enhancement up to 25% within the commonly used optical communication and sensing region (800 to 980 nm) was achieved in the MCA-decorated silicon positive-intrinsic-negative (PIN) devices compared with the control ones. This work well demonstrated that the leaky modes of WGM resonant dielectric cavity arrays can effectively improve the light trapping and thus responsivity in broadband or selective spectra for photodetection and will enable future exploration of their applications in other photoelectric conversion devices.

Abstract Deep ultraviolet AlGaN-based nanorod (NR) arrays were fabricated by nanoimprint lithography and top-down dry etching techniques from a fully structural LED wafer. Highly ordered periodic structural properties and morphology were confirmed by scanning electron microscopy and transmission electron microscopy. Compared with planar samples, cathodoluminescence measurement revealed that NR samples showed 1.92-fold light extraction efficiency (LEE) enhancement and a 12.2-fold internal quantum efficiency (IQE) enhancement for the emission from multi-quantum wells at approximately 277 nm. The LEE enhancement can be attributed to the well-fabricated nanostructured interface between the air and the epilayers. Moreover, the reduced quantum-confined stark effect accounted for the great enhancement in IQE.

Abstract Three kinds of typical structures, hemi-/spherical nanoparticles/nanoparticle dimers on the substrate and spherical nanoparticles/nanoparticle dimers half-buried into the substrate, are used for FDTD simulation to theoretically discuss the influence of the substrate to the localized surface plasmon (LSP) coupling when the metal nanoparticles/nanoparticle dimers are locating near a substrate. Simulated results show that the dependencies between the LSP coupling wavelength and the refractive index of the substrate for different structures are not the same, which can be attributed to the different polarization field distributions of LSPs. When light is incident from different directions, the LSP coupling strength are not the same as well and the ratios of the scattering peak intensities depend on the position of the metal nanoparticles or nanoparticle dimers. These phenomenon can be explained by the difference of the local driving electric field intensities which is modulated by the interface between the air and the substrate.

The control over the crystallographic orientation at functional oxide interfaces is crucial to the performance of oxide-based electronics. Here, Zhou et al. provide a detailed insight into the thermodynamic and kinetic process of nucleation-mediated crystal growth at the ZnO and MgO interface.

Abstract Wurtzite ZnO films were grown on MgO(111) substrates by plasma-assisted molecular beam epitaxy (MBE). Different initial growth conditions were designed to monitor the film quality. All the grown ZnO films show highly (0001)-oriented textures without in-plane rotation, as illustrated by in situ reflection high-energy electron diffraction (RHEED) and ex situ X-ray diffraction (XRD). As demonstrated by atomic force microscopy (AFM) images, “ridge-like” and “particle-like” surface morphologies are observed for the ZnO films grown in a molecular O2 atmosphere with and without an initial deposition of Zn adatoms, respectively, before ZnO growth with oxygen plasma. This artificially designed interfacial layer deeply influences the final surface morphology and optical properties of the ZnO film. From room-temperature photoluminescence (PL) measurements, a strong defect-related green luminescence band appears for the ZnO film with a “particle-like” morphology but was hardly observed in the films with flat “ridge-like” surface morphologies. Our work suggests that the ZnO crystallinity can be improved and defect luminescence can be reduced by designing interfacial layers between substrates and epilayers.

Abstract We investigate the electric-field-dependent optical properties and electronic behaviors of GaS monolayer by using the first-principles calculations. A reversal of the dipole transition from E//c to E⊥c anisotropy is found with a critical external electric field of about 5 V/nm. Decomposed projected band contributions exhibit asymmetric electronic structures in GaS interlayers under the external electric field, which explains the evolution of the absorption preference. Spatial distribution of the partial charge and charge density difference reveal that the strikingly reversed optical anisotropy in GaS ML is closely linked to the additional crystal field originated from the external electric field. These results pave the way for experimental research and provide a new perspective for the application of the monolayer GaS-based two-dimensional electronic and optoelectronic devices.

The photoelectric properties and physical mechanism of AlGaN-based deep ultraviolet light emitting diodes (DUV-LEDs) with the superlattice p-type doping layer (PSL) are studied numerically and compared with the Al-composition (50%) conventional p-type layer AlGaN-based DUV-LEDs. The extraordinary design of DUV-LEDs with varied barrier PSL has been investigated by the advanced physical model of semiconductor device (APSYS) software by comparing the internal quantum efficiency, light output power, electroluminescence intensity, distributions of carrier concentration, and energy band diagrams. As a result of hole injection augmentation and electronic leakage reduction, the property of AlGaN-based DUV-LED with the PSL has been enhanced significantly. Moreover, the 55%-Al-composition of the superlattice barrier p-type doping layer greatly reduces the effective potential height for holes in the valence band, which is beneficial for hole injection from the PSL. The new structure improves the properties of DUV-LED and shows remarkable output performance.

The effects of ultrathin AlN insertion layers on the strain status, as well as optical properties of AlGaN multiple quantum wells (MQWs), were studied. A large stress variation of about -1.46 GPa can be achieved by introducing two ultrathin AlN layers at each interface between the quantum well and the barrier, thereby resulting in the fact that the degree of polarization is increased from 17.8% to 22.3% in traditional MQWs. In addition, the quantum well emission are found to become symmetric and narrower due to the suppression of compositional fluctuation. These results provide a simple technique to modify the strain field of MQWs so as to improve transverse-electric polarized emission for deep ultraviolet light emitting diodes.