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4. Toward Advanced High‐k and Electrode Thin Films for DRAM Capacitors via Atomic Layer Deposition.

5. Study of Metal–Dielectric Interface for Improving Electrical Properties and Reliability of DRAM Capacitor.

13. Interfacial engineering of ZrO2 metal-insulator-metal capacitor using Al2O3/TiO2 buffer layer for improved leakage properties.

14. Poster: Memristive Systems

22. Dependence of optimized annealing temperature for tetragonal phase formation on the Si concentration of atomic-layer-deposited Hf-silicate film.

31. Improving the Electrical Properties of Lanthanum Silicate Films on Ge Metal Oxide Semiconductor Capacitors by Adopting Interfacial Barrier and Capping Layers

43. Properties of Atomic Layer Deposited HfO2Films on Ge Substrates Depending on Process Temperatures

44. The Impact of Carbon Concentration on the Crystalline Phase and Dielectric Constant of Atomic Layer Deposited HfO2Films on Ge Substrate

46. Impacts of Zr Composition in $\hbox{Hf}_{1-x} \hbox{Zr}_{x}\hbox{O}_{y}$ Gate Dielectrics on Their Crystallization Behavior and Bias-Temperature-Instability Characteristics

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