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45 results on '"Jun, Dong-Hwan"'

17. Influences of surface treatment on In0.53Ga0.47As epitaxial layer grown on silicon substrate using trimethylaluminum

Author

Kim, Soo Bin, primary, Lee, Seung Hyun, additional, Jung, Hae Jun, additional, Seo, Myung Su, additional, Kim, Sung Min, additional, Lee, Soonil, additional, Park, Ji-Yong, additional, Park, Tae Joo, additional, Jeong, Hae-Yong, additional, Jun, Dong-Hwan, additional, Park, Kyung Ho, additional, Park, Won-Kyu, additional, and Lee, Sang Woon, additional

Published
2018
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44. Efficiency improvement of III–V GaAs solar cells using biomimetic TiO2 subwavelength structures with wide-angle and broadband antireflection properties.

Author

Leem, Jung Woo, Su Yu, Jae, Jun, Dong-Hwan, Heo, Jonggon, and Park, Won-Kyu

Subjects
*SOLAR cells, *BIOMIMETIC chemicals, *TITANIUM oxides, *WAVELENGTHS, *CHEMICAL structure, *ANTIREFLECTIVE coatings
Abstract

The power conversion efficiency (PCE) improvement of III–V gallium arsenide (GaAs) single-junction (SJ) solar cells with titanium dioxide (TiO2) subwavelength structures (SWSs) as antireflection coatings (ARCs) is reported. TiO2 SWSs are fabricated by dry etching using dotted gold nanopatterns prepared with glancing angle deposition and thermal dewetting processes. Their optical reflection properties are studied in the wavelength range of 350–900nm at incident light angles (θ i) of 3–80°, together with the theoretical prediction by a rigorous coupled-wave analysis. For SWSs on the 50nm-thick TiO2 layer/GaAs substrate, a lower solar weighted reflectance (SWR) of ~6.2% is obtained compared to that (i.e., SWR ~9.5%) of the TiO2 single-layer ARC (SLARC). By employing the TiO2 SWSs into the III–V GaAs SJ solar cell, the increased short circuit current density (J sc) of 24.82mA/cm2 is achieved, thus leading to an improved PCE of 19.66% at θ i=0° (i.e., J sc=18.38 and 23.65mA/cm2 and PCE=14.74 and 18.98% for the solar cells with bare surface and TiO2 SLARC, respectively). For incident angle-dependent device characteristics, the solar cell with the TiO2 SWSs also exhibits superior performance over a wide θ i range of 20–80°. Additionally, after the encapsulation, its J sc and PCE values are slightly increased to 26.15mA/cm2 and 20.73%, respectively. For the stability, there are no significant variations in J sc and PCE after about 50 days. [ABSTRACT FROM AUTHOR]

Published
2014
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45. Highly Sensitive and Reusable Membraneless Field-Effect Transistor (FET)-Type Tungsten Diselenide (WSe 2 ) Biosensors.

Author

Lee HW, Kang DH, Cho JH, Lee S, Jun DH, and Park JH

Subjects
Tungsten, Biosensing Techniques
Abstract

In recent years when the demand for high-performance biosensors has been aroused, a field-effect transistor (FET)-type biosensor (BioFET) has attracted great interest because of its high sensitivity, label-free detection, fast detection speed, and miniaturization. However, the insulating membrane in the conventional BioFET, which is essential in preventing the surface dangling bonds of typical semiconductors from nonspecific bindings, has limited the sensitivity of biosensors. Here, we present a highly sensitive and reusable membraneless BioFET based on a defect-free van der Waals material, tungsten diselenide (WSe 2 ). We intentionally generated a few surface defects that serve as extra binding sites for the bioreceptor immobilization through weak oxygen plasma treatment, consequently magnifying the sensitivity values to 2.87 × 10 5 A/A for 10 mM glucose. The WSe 2 BioFET also maintained its high sensitivity even after several cycles of rinsing and glucose application were repeated.

Published
2018
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