193 results on '"Juhel, M."'
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2. Trench filling with phosphorus-doped monocrystalline and polycrystalline silicon
3. Redistribution of phosphorus during NiPtSi formation on in-situ doped Si
4. Point and extended defect interaction in low – high energy phosphorus implantation sequences
5. Improvement of etching and cleaning methods for integration of raised source and drain in FD-SOI technologies
6. Modeling boron dose loss in sidewall spacer stacks of complementary metal oxide semiconductor transistors
7. Ni(Pt)-silicide contacts on CMOS devices: Impact of substrate nature and Pt concentration on the phase formation
8. Pt redistribution in N-MOS transistors during Ni salicide process
9. Atom probe tomography of SRAM transistors: Specimen preparation methods and analysis
10. New generation of reactive pre-clean prior to barrier–seed deposition to preserve ULK integrity
11. Boron out-diffusion mechanism in oxide and nitride CMOS sidewall spacer: Impact of the materials properties
12. Self-aligned nickel–platinum silicide oxidation
13. Static time-of-flight secondary ion mass spectrometry analysis of microelectronics related substrates using a polyatomic ion source
14. Quantitative static Time-of-Flight Secondary Ion Mass Spectrometry analysis of anionic minority species in microelectronic substrates
15. Post electrochemical Cu deposition anneal impact on stress-voiding in individual vias
16. STEM EELS/EDX dopant analysis of nm-scale Si devices
17. Impact of surface preparation on nickel–platinum alloy silicide phase formation
18. SIMS depth profiling of boron ultra shallow junctions using oblique O 2+ beams down to 150 eV
19. Cu surface treatment influence on Si adsorption properties of CuSiN self-aligned barriers for sub-65 nm technology node
20. Copper Surface Analysis with ToF-SIMS: Spectra Interpretation and Stability Issues
21. Poly-Si gate engineering for advanced CMOS transistors by germanium implantation
22. Moisture diffusion in dense SiO2 and ultra low k integrated stacks
23. Wet thermal oxidation of AlAsSb alloys lattice matched to lnP
24. SIMS depth profiling of SiGe:C structures in test pattern areas using low energy cesium with a Cameca IMS Wf
25. 450 GHz <tex>$f_{\text{T}}$</tex> SiGe:C HBT Featuring an Implanted Collector in a 55-nm CMOS Node
26. 450 GHz $f_{\text{T}}$ SiGe:C HBT Featuring an Implanted Collector in a 55-nm CMOS Node
27. Redistribution of phosphorus during Ni0.9Pt0.1-based silicide formation on phosphorus implanted Si substrates
28. Hafnium Impurity Defects in Silicon: A Characterization
29. SiGe oxidation kinetics and oxide density measured by resonant soft X-ray reflectivity
30. Improvement of Boron Doping in SiGe Raised Sources and Drains for FD-SOI Technology by Carbon Incorporation
31. Wet thermal oxidation of AlAsSb alloys lattice matched to InP.
32. Low thermal budget for Si and SiGe surface preparation for FD-SOI technology
33. Low-Temperature low-resistivity PEALD TiN using TDMAT under hydrogen redecing ambient
34. Shallow junction engineering by phosphorus and carbon co-implantation: optimization of carbon dose and energy
35. Ultra shallow junctions optimization with non doping species co-implantation
36. Physical Characterization of HfxTiyOz Thin Films Deposited on Si by Pulsed Injection MOCVD
37. Determination of the Spatial ResolutionFunction in Energy Filtered TEM and Application to Thin Gate Oxides Measurement at 80 eV Energy Loss
38. STEM EELS/EDX dopant analysis of nm-scale Si devices
39. (Invited) In Depth Study of Ge Impact on Advanced SiGe PMOS Transistors
40. Evaluation and modeling of lanthanum diffusion in TiN/La2O3/HfSiON/SiO2/Si high-k stacks
41. Three-dimensional distribution of Al in high-k metal gate: Impact on transistor voltage threshold
42. Three dimensional distributions of arsenic and platinum within NiSi contact and gate of an n-type transistor
43. STEM EDX applications for arsenic dopant mapping in nanometer scale silicon devices
44. Validation of a liquid chromatography-tandem mass spectrometry screening method to monitor 58 antibiotics in milk: a qualitative approach
45. Two-dimensional quantitative mapping of arsenic in nanometer-scale silicon devices using STEM EELS–EDX spectroscopy
46. Redistribution of phosphorus during Ni0.9Pt0.1-based silicide formation on phosphorus implanted Si substrates.
47. Fragmentation of molecular compounds on silicon wafers and low dielectric constant materials studied by time-of-flight secondary ion mass spectrometry using a polyatomic ion source
48. Cu surface treatment influence on Si adsorption properties of CuSiN self-aligned barriers for sub-65nm technology node
49. SIMS depth profiling of boron ultra shallow junctions using oblique O2+ beams down to 150eV
50. Determination of the Spatial Resolution Function in Energy Filtered TEM and Application to Thin Gate Oxide Measurements at 80 eV Energy Loss
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