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22 results on '"Ju, Zhiping"'

8. Bright Single-Photon Emitters in Cubic Silicon Carbide

Author

He, Mengting, Ju, Zhiping, Xue, Yingxian, Lin, Junjie, Cao, Yujing, Wu, Botao, and Wu, E

Abstract

Single-photon emitters (SPEs) are critical to the realization of various applications, including quantum information technology, quantum sensing, and quantum communication. As stable and bright SPEs, point defects in wide bandgap semiconductors are compatible with existing well-matured semiconductor technologies, making integration with semiconductor devices very simple. Here we report SPEs in cubic silicon carbide (3C-SiC) emitting in the visible range. The emitters can be excited stably by a green laser at ambient temperature and have stable photoluminescence (PL) intensity reaching up to 245 × 103 counts per second (cps). In experiments, the degree of linear polarization of both excitation and emission can reach 80%. Together with the fact that silicon carbide (SiC) is a material that is easy to grow and fabricate, these properties show the advantage and prospect of SPEs in SiC for applications in quantum networks.

Published
2024
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12. Amplification of stimulated radiation on the zero-phonon line of nitrogen-vacancy color centers in diamond.

Author

UN Junjie, JU Zhiping, WANG Xiwei, WANG Dufu, WANG Shenglin, SHENSi, WU Botao, and WU E.

Abstract

In order to solve the technical bottleneck of the sensitive detection of the optically detected magnetic resonance (ODMR) signal from the nitrogen vacancy (NV) color centers in the diamond by taking the advantage of the directional amplification of stimulated radiation' an optical amplification system was set up to investigate the stimulated radiation of NV color centers in diamond' where the maximum amplification efficiency reached 10. 5%. Besides' it is found that the amplification efficiency is related to the pump laser power and signal laser power as well as the polarization states of the two lasers. The results show that it is promising to use the amplification of stimulated radiation to replace the fluorescence in the ODMR measurement with NV color centers in the application of remote sensing. [ABSTRACT FROM AUTHOR]

Published
2022
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17. Bright near-surface silicon vacancy centers in diamond fabricated by femtosecond laser ablation

Author

Rong, Youying, Cheng, Ke, Ju, Zhiping, Pan, Chengda, Ma, Qiang, Liu, Shikang, Shen, Si, Wu, Botao, Jia, Tianqing, Wu, E, and Zeng, Heping

Abstract

We report the generation of single negatively charged silicon vacancy (SiV^−) color centers by focusing a femtosecond (fs) laser on top of a high-purity diamond coated with a layer of Si nanoball. Under the interaction of a high-intensity fs laser, Si atoms were ionized and implanted into the diamond, accompanied with the creation of vacancies. After annealing at 850°C in vacuum for 1 h, the photoluminescence spectra of bright spots around the created crater presented a typical strong zero-phonon line at around 737 nm of SiV^− centers. Bright single SiV^− color centers could be observed with a maximum saturating counting rate of 300×10^3  counts/s. We explain the formation mechanism of SiV^− centers in diamond via a Coulomb explosion model. The results demonstrate that fs laser ablation can be utilized as a very promising tool to conveniently fabricate single bright SiV^− centers in diamond.

Published
2019

18. Investigation on AgGaSe2 for water splitting from first-principles calculations

Author

Huang, Dan, Persson, Clas, Ju, Zhiping, Dou, Maofeng, Yao, Chunmei, Guo, Jin, Huang, Dan, Persson, Clas, Ju, Zhiping, Dou, Maofeng, Yao, Chunmei, and Guo, Jin

Abstract

The electronic structure of AgGaSe2 has been investigated as a photocatalyst candidate by first-principles calculation. Our results demonstrate that the band edge positions of bulk AgGaSe2 straddle the water redox potentials. From the band offset calculation, we find that Al-doping of AgGaSe2 shifts the conduction band minimum upwards, whereas Cu-doping of AgGaSe2 shifts the valence band maximum upwards. By (Ag, Cu)(Ga, Al)Se-2 alloying one can thereby tailor both the band edge positions and the band gap energy, and this effect provides an approach to optimize the band properties for overall water splitting. Moreover, AgGaSe2 forms a suitable junction with CuGaSe2 with a type-II band offset, which facilitates electron-hole separation. The AgGaSe2 and CuGaSe2 junction can be designed as a tandem photoelectrochemical device to improve the photocatalytic properties of the system., QC 20140425

Published
2014
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22. From quantum Euler–Maxwell equations to incompressible Euler equations.

Author

Yang, Jianwei and Ju, Zhiping

Subjects
*QUANTUM theory, *EULER equations, *COMPRESSIBLE flow, *STOCHASTIC convergence, *DATA analysis
Abstract

The combined quasi-neutral and non-relativistic limit of compressible quantum Euler–Maxwell equations for plasmas is studied in this paper. For well-prepared initial data, it is shown that the smooth solution of compressible quantum Euler–Maxwell equations converges to the smooth solution of incompressible Euler equations by using the modulated energy method. Furthermore, the associated convergence rates are also obtained. [ABSTRACT FROM AUTHOR]

Published
2015
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