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Septic pulmonary emboli rarely cause respiratory failure that requires mechanical ventilation. The most common causes of septic pulmonary emboli are related to intravenous drug abuse, indwelling intravenous catheters, endocarditis and septic pelvic thrombophlebitis. In addition, soft tissue injury-related thrombophlebitis rarely causes septic pulmonary emboli. We describe a unique case of a 43-year-old man who developed septic thrombophlebitis of the femoral vein following soft tissue injury from trauma to the shin with ensuing septic pulmonary emboli which necessitated endotracheal intubation and mechanical ventilation. The patient required mechanical ventilation for eleven days, developed empyema and grew out methicillin-resistant Staphylococcus aureus on blood cultures. A transesophageal echocardiogram was normal, and there was no indication of bacterial endocarditis. In addition to eleven days of mechanical ventilation, the patient was treated with intravenous heparin, cefepime and clindamycin. These medications were then discontinued and the patient was treated with weight-adjusted vancomycin. Following the return of cultures, the patient was treated for six weeks with ceftaroline 600 mg IV twice a day. In addition, the patient received bilateral thoracentesis followed by chest tube drainage until resolution of the pleural effusions. The patient made a complete recovery. We describe this case and the implications for differential diagnosis and treatment of these two uncommon conditions.

In this article, we demonstrate diamagnetically levitated milli-robots performing 3D heterogeneous micro-assembly of silicon micro-machined parts and polymer microspheres. Diamagnetically levitated milli-robots, in conjunction with controlled magnetic fields from printed circuit boards, can enable very precise, low cost, high density, and an easily scalable approach to massively parallel micro-assembly. By using an eddy-current dampening layer to suppress ambient external forces, we measured an open-loop in-plane equilibrium motion repeatability of 28.6 nm rms over cm’s of travel and a total vertical range of 50–70 μm. To perform micro-assembly, light-weight end effectors and force compatible micro-processes (i.e. micro-grasping and liquid handling) were integrated with the diamagnetic levitated milli-robots. Various tele-operated micro-assembly tasks were demonstrated such as joining polymer micro-spheres, interlocking silicon micro-parts, and printing electrical interconnects. Multiple specialized milli-robots, each taking up only 31 mm2, are used to perform each individual micro-task. In the future, by developing more sophisticated milli-robots and operating many more of these milli-robots in parallel, a dense, automated, rapid milli-robot assembly may be possible.

The freeway reliability methodology proposed for the Highway Capacity Manual, which is based on SHRP2 L08 methodology, produces an approach to scenario generation that can result in several thousand scenarios to be evaluated to estimate travel time reliability. This large number of scenarios can result in cumbersome user input, a demanding computational burden, and more important, extensive challenges posed when trying to error-check and interpret individual scenarios or to calibrate the model on the basis of real-world observations. This paper presents a novel scenario-generating methodology that accounts for multiple operating conditions. The objective of the proposed approach is to increase the quality of each scenario to make it more representative of the expected congestion patterns on the freeway. This paper shows that the new approach estimates reliability performance measures more accurately than current methods, while reducing the number of scenarios significantly. Thus, the new approach results in a more direct interpretation of results, while simultaneously relaxing many assumptions in the present approach to scenario generation and decreasing biases and errors. The proposed approach uses three core mathematical schemes: (a) a deterministic mathematical model for demand generation and scheduled work zones, (b) a Monte Carlo simulation for incident and weather events, and (c) an optimization algorithm to maximize similarities between the generated set of scenarios and the population of all scenarios. A comparison of results between the proposed method and the SHRP 2 Project L08 approach confirms that the proposed approach yields a higher level of accuracy in matching observed freeway reliability performance measures.

In this article, we demonstrate the application of diamagnetically levitated milli-robots for the 2D micro-assembly of 10-μm polymer microspheres and other silicon microfabricated parts. By using an optical microscope for feedback (imaged at 27 Hz), we are able to demonstrate long-term open-loop stability (up to 78 hr) and sub-micron stability of the levitated micro-robots. Furthermore, due to the low hysteresis and high compliance in the magnetic drive of the milli-robots, we are able to directly use the milli-robots in conjunction with machine vision as a force sensor. Soft polymer-based end effectors are used for the micromanipulation of parts and show modest reliability of pick (>70%) and high reliability of place (>99%) that is insensitive to the pick surface material. Finally, we implement autonomous micro-assembly from randomly deposited microspheres into ordered arrays.

In top down nanofabrication research facilities around the world, the direct-write high-resolution patterning tool of choice is overwhelmingly electron beam lithography. Remarkably small features can be written in a variety of polymeric resists [V. R. Manfrinato et al., Nano Lett. 14, 4406 (2014); V. R. Manfrinato, A. Stein, L. Zhang, Y. Nam, K. G. Yager, E. A. Stach, and C. T. Black, Nano Lett. 17, 4562 (2017)]. However, this technology, which in this article the authors will refer to as conventional electron beam lithography (CEBL), is reaching its practical resolution and precision limits [V. R. Manfrinato et al., Nano Lett. 14, 4406 (2014)]. Hydrogen depassivation lithography (HDL) [J. N. Randall, J. W. Lyding, S. Schmucker, J. R. Von Ehr, J. Ballard, R. Saini, and Y. Ding, J. Vac. Sci. Technol. B 27, 2764 (2009); J. N. Randall, J. B. Ballard, J. W. Lyding, S. Schmucker, J. R. Von Ehr, R. Saini, H. Xu, and Y. Ding, Microelectron. Eng. 87, 955 (2010)] is a different version of electron beam lithography that is not limited in resolution and precision in the way that CEBL is. It uses a cold field emitter, a scanning tunneling microscope (STM) tip, to deliver a small spot of electrons on a Si (100) 2 × 1 H-passivated surface to expose a self-developing resist that is a monolayer of H adsorbed to the Si surface. Subnanometer features [S. Chen, H. Xu, K. E. J. Goh, L. Liu, and J. N. Randall, Nanotechnology 23, 275301 (2012)], and even the removal of single H atoms can be routinely accomplished [M. A. Walsh and M. C. Hersam, Annu. Rev. Phys. Chem. 60, 193 (2009)]. It is known that the H desorption process at low biases is a multielectron process [E. Foley, A. Kam, J. Lyding, and P. Avouris, Phys. Rev. Lett. 80, 1336 (1998)], but the tunneling distribution of the electrons from the STM tip to the Si surface lattice is not known. The authors have developed a simple model that demonstrates that the combination of two highly nonlinear processes creates a much higher contrast exposure mechanism than CEBL. Currently, HDL has been used almost exclusively on the Si (100) surface and has a limited number of pattern transfer techniques including Si and Ge patterned epitaxy, selective atomic layer deposition of TiO2 followed by reactive ion etching [J. B. Ballard, T. W. Sisson, J. H. G. Owen, W. R. Owen, E. Fuchs, J. Alexander, J. N. Randall, and J. R. Von Ehr, J. Vac. Sci. Technol. B 31, 06FC01 (2013)], and selective deposition of dopant atoms for quantum devices and materials [Workshop on 2D Quantum MetaMaterials held at NIST, Gaithersburg, MD, April 25–26, 2018, edited by J. Owen and W. P. Kirk]. While the throughput of HDL is very low, going parallel in a big way appears promising [J. N. Randall, J. H. G. Owen, J. Lake, R. Saini, E. Fuchs, M. Mahdavi, S. O. R. Moheimani, and B. C. Schaefer, J. Vac. Sci. Technol. B 36, 6 (2018)]. However, the most exciting aspect of HDL is its atomic-scale resolution and precision, which is key to nanoscale research. The authors see HDL emerging as the ultimate high-resolution patterning tool in top down nanofabrication research facilities.In top down nanofabrication research facilities around the world, the direct-write high-resolution patterning tool of choice is overwhelmingly electron beam lithography. Remarkably small features can be written in a variety of polymeric resists [V. R. Manfrinato et al., Nano Lett. 14, 4406 (2014); V. R. Manfrinato, A. Stein, L. Zhang, Y. Nam, K. G. Yager, E. A. Stach, and C. T. Black, Nano Lett. 17, 4562 (2017)]. However, this technology, which in this article the authors will refer to as conventional electron beam lithography (CEBL), is reaching its practical resolution and precision limits [V. R. Manfrinato et al., Nano Lett. 14, 4406 (2014)]. Hydrogen depassivation lithography (HDL) [J. N. Randall, J. W. Lyding, S. Schmucker, J. R. Von Ehr, J. Ballard, R. Saini, and Y. Ding, J. Vac. Sci. Technol. B 27, 2764 (2009); J. N. Randall, J. B. Ballard, J. W. Lyding, S. Schmucker, J. R. Von Ehr, R. Saini, H. Xu, and Y. Ding, Microelectron. Eng. 87, 955 (2010)] is a different version of electron beam lithography...

Hydrogen depassivation lithography (HDL) carried out by a scanning tunneling microscope has sub-nm resolution and the potential to create atomically precise patterns. However, as a serial write tool, it is subject to Tennant’s law which fairly accurately predicts an extremely low areal throughput in line with their experimental results. In order to improve the throughput, the authors explore the feasibility of an approach to develop a highly parallel exposure system, which preserves the ability to perform truly atomically precise patterning. The obvious way to increase scanning probe lithography throughput is to increase the number of probes. In this paper, they compare existing multiple scanning probe systems [D. S. Ginger, H. Zhang, and C. A. Mirkin, Angew. Chem. Int. Ed. 43, 30 (2004) and P. Vettiger et al., Microelectronic 46, 11 (1999)] with their proposed highly parallel, MEMS-based scanners with three degrees of freedom (3 DoF) movement. Additionally, since HDL is a version of e-beam lithography, they examine the problems encountered by the attempts to go parallel with conventional e-beam lithography and why highly parallel HDL avoids these physical and engineering problems. While there are still some engineering challenges to be met, the path to massively parallel HDL tip arrays is relatively straightforward. They believe that 3 DoF MEMS-based independently controlled scanners could be placed with a density of 10 100/cm2. That density range implies 7 × 106 tips on a 300 mm wafer. However, they do want to make clear that they do not contend that even this level of parallelism will make HDL a contender for producing CMOS consumer electronics.Hydrogen depassivation lithography (HDL) carried out by a scanning tunneling microscope has sub-nm resolution and the potential to create atomically precise patterns. However, as a serial write tool, it is subject to Tennant’s law which fairly accurately predicts an extremely low areal throughput in line with their experimental results. In order to improve the throughput, the authors explore the feasibility of an approach to develop a highly parallel exposure system, which preserves the ability to perform truly atomically precise patterning. The obvious way to increase scanning probe lithography throughput is to increase the number of probes. In this paper, they compare existing multiple scanning probe systems [D. S. Ginger, H. Zhang, and C. A. Mirkin, Angew. Chem. Int. Ed. 43, 30 (2004) and P. Vettiger et al., Microelectronic 46, 11 (1999)] with their proposed highly parallel, MEMS-based scanners with three degrees of freedom (3 DoF) movement. Additionally, since HDL is a version of e-beam lithography, t...

Certain points of Russian grammar can be adequately explained only with reference to sentence stress. Word order only is the most obvious of the many areas which could be explained more effectively if from the beginning one could assume an awareness of this important and easily recognized feature of language. But a glance at our textbooks suggests that in fact we make no consistent use of it. In this paper I will suggest areas which lend themselves to explanation in terms of sentence stress, as well as directions for developing drills. It is sentence stress, which coincides with the intonational center, which lends prominence to what may be called the Focus of the sentence. Stress differentiates, for example, the sentences The BOY was reading (0ital MAL'6IK) and The boy was READING (Mal'&ik dITAL). Most mistakes in word order are a result of failure to observe the PRINCIPLE of END-FOcus: in the Russian sentence, thematic elements, if present, must precede rhematic elements. In other terms, the Given precedes the New, what is taken to be within the frame of reference is stated first.' For example, when the theme is an Englishman, getting gas, or someone's possibly knowing something, one says in Russian