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Author(s): D. Halbertal (corresponding author) [1]; J. Cuppens [1, 2]; M. Ben Shalom [3, 4]; L. Embon [1]; N. Shadmi [5]; Y. Anahory [1]; H. R. Naren [1]; J. Sarkar [...]

Photoinduced electron transfer was observed on supramolecular assemblies composed of bipyridinium salts and dialkoxy benzene-tethered ruthenium (II) trisbipyridine. Intramolecular pathways facilitated the transfer of electrons to the electron acceptors that were found in the supramolecular assemblies. Electron transfer also proceeded through a diffusional route associated with a free-uncomplexed compound.

Infrared photodetectors are essential devices for telecommunication and night vision technologies. Two frequently used materials groups for this technology are III-V and II-VI semiconductors, notably, mercury-cadmium-telluride alloys (MCT). However, growing them usually requires expensive substrates that can only be provided on small scales, and their large-scale production as crystalline nanostructures is challenging. In this paper, we present a two-stage process for creating aligned MCT nanowires (NWs). First, we report the growth of planar CdTe nanowires with controlled orientations on flat and faceted sapphire substrates via the vapor-liquid-solid (VLS) mechanism. We utilize this guided growth approach to parallelly integrate the NWs into fast near-infrared photodetectors with characteristic rise and fall times of ∼100 μs at room temperature. An epitaxial effect of the planar growth and the unique structure of the NWs, including size and composition, are suggested to explain the high performance of the devices. In the second stage, we show that cation exchange with mercury can be applied, resulting in a band gap narrowing of up to 55 meV, corresponding to an exchange of 2% Cd with Hg. This work opens new opportunities for creating small, fast, and sensitive infrared detectors with an engineered band gap operating at room temperature.

Surface-guided growth has proven to be an efficient approach for the production of nanowire arrays with controlled orientations and their large-scale integration into electronic and optoelectronic devices. Much has been learned about the different mechanisms of guided nanowire growth by epitaxy, graphoepitaxy, and artificial epitaxy. A model describing the kinetics of surface-guided nanowire growth has been recently reported. Yet, many aspects of the surface-guided growth process remain unclear due to a lack of its observation in real time. Here we observe how surface-guided nanowires grow in real time by in situ scanning electron microscopy (SEM). Movies of ZnSe surface-guided nanowires growing on periodically faceted substrates of annealed M-plane sapphire clearly show how the nanowires elongate along the substrate nanogrooves while pushing the catalytic Au nanodroplet forward at the tip of the nanowire. The movies reveal the timing between competing processes, such as planar vs nonplanar growth, catalyst-selective vapor-liquid-solid elongation vs nonselective vapor-solid thickening, and the effect of topographic discontinuities of the substrate on the growth direction, leading to the formation of kinks and loops. Contrary to some observations for nonplanar nanowire growth, planar nanowires are shown to elongate at a constant rate and not by jumps. A decrease in precursor concentration as it is consumed after long reaction time causes the nanowires to shrink back instead of growing, thus indicating that the process is reversible and takes place near equilibrium. This real-time study of surface-guided growth, enabled by in situ SEM, enables a better understanding of the formation of nanostructures on surfaces.

We demonstrate self-sensing tungsten disulfide nanotube (WS 2 NT) torsional resonators. These resonators exhibit all-electrical self-sensing operation with electrostatic excitation and piezoresistive motion detection. We show that the torsional motion of the WS 2 NT resonators results in a change of the nanotube electrical resistance, with the most significant change around their mechanical resonance, where the amplitude of torsional vibrations is maximal. Atomic force microscopy analysis revealed the torsional and bending stiffness of the WS 2 NTs, which we used for modeling the behavior of the WS 2 NT devices. In addition, the solution of the electrostatic boundary value problem shows how the spatial potential and electrostatic field lines around the device impact its capacitance. The results uncover the coupling between the electrical and mechanical behaviors of WS 2 and emphasize their potential to operate as key components in functional devices, such as nanosensors and radio frequency devices.

Strain relaxation mechanisms during epitaxial growth of core-shell nanostructures play a key role in determining their morphologies, crystal structure and properties. To unveil those mechanisms, we perform atomic-scale aberration-corrected scanning transmission electron microscopy studies on planar core-shell ZnSe@ZnTe nanowires on α-Al 2 O 3 substrates. The core morphology affects the shell structure involving plane bending and the formation of low-angle polar boundaries. The origin of this phenomenon and its consequences on the electronic band structure are discussed. We further use monochromated valence electron energy-loss spectroscopy to obtain spatially resolved band-gap maps of the heterostructure with sub-nanometer spatial resolution. A decrease in band-gap energy at highly strained core-shell interfacial regions is found, along with a switch from direct to indirect band-gap. These findings represent an advance in the sub-nanometer-scale understanding of the interplay between structure and electronic properties associated with highly mismatched semiconductor heterostructures, especially with those related to the planar growth of heterostructured nanowire networks., (© 2022. The Author(s).)

Optoelectronic micro- and nanostructures have a vast parameter space to explore for modification and optimization of their functional performance. This paper reports on a data-led approach using high-throughput single nanostructure spectroscopy to probe >8000 structures, allowing for holistic analysis of multiple material and optoelectronic parameters with statistical confidence. The methodology is applied to surface-guided CsPbBr 3 nanowires, which have complex and interrelated geometric, structural, and electronic properties. Photoluminescence-based measurements, studying both the surface and embedded interfaces, exploits the natural inter nanowire geometric variation to show that increasing the nanowire width reduces the optical bandgap, increases the recombination rate in the nanowire bulk, and reduces the rate at the surface interface. A model of carrier recombination and diffusion ascribes these trends to carrier density and strain effects at the interfaces and self-consistently retrieves values for carrier mobility, trap densities, bandgap, diffusion length, and internal quantum efficiency. The model predicts parameter trends, such as the variation of internal quantum efficiency with width, which is confirmed by experimental verification. As this approach requires minimal a priori information, it is widely applicable to nano- and microscale materials.

Metal halide perovskites (MHPs) have unique characteristics and hold great potential for next-generation optoelectronic technologies. Recently, the importance of lattice strain in MHPs has been gaining recognition as a significant optimization parameter for device performance. While the effect of strain on the fundamental properties of MHPs has been at the center of interest, its combined effect with an external electric field has been largely overlooked. Here we perform an electric-field-dependent photoluminescence study on heteroepitaxially strained surface-guided CsPbBr 3 nanowires. We reveal an unexpected strong linear dependence of the photoluminescence intensity on the alternating field amplitude, stemming from an induced internal dipole. Using low-frequency polarized-Raman spectroscopy, we reveal structural modifications in the nanowires under an external field, associated with the observed polarity. These results reflect the important interplay between strain and an external field in MHPs and offer opportunities for the design of MHP-based optoelectronic nanodevices.

Polar materials display a series of interesting and widely exploited properties owing to the inherent coupling between their fixed electric dipole and any action that involves a change in their charge distribution. Among these properties are piezoelectricity, ferroelectricity, pyroelectricity, and the bulk photovoltaic effect. Here we report the observation of a related property in this series, where an external electric field applied parallel or anti-parallel to the polar axis of a crystal leads to an increase or decrease in its second-order nonlinear optical response, respectively. This property of electric-field-modulated second-harmonic generation (EFM-SHG) is observed here in nanowires of the polar crystal ZnO, and is exploited as an analytical tool to directly determine by optical means the absolute direction of their polarity, which in turn provides important information about their epitaxy and growth mechanism. EFM-SHG may be observed in any type of polar nanostructures and used to map the absolute polarity of materials at the nanoscale.

The interest in metal halide perovskites has grown as impressive results have been shown in solar cells, light emitting devices, and scintillators, but this class of materials have a complex crystal structure that is only partially understood. In particular, the dynamics of the nanoscale ferroelastic domains in metal halide perovskites remains difficult to study. An ideal in situ imaging method for ferroelastic domains requires a challenging combination of high spatial resolution and long penetration depth. Here, we demonstrate in situ temperature-dependent imaging of ferroelastic domains in a single nanowire of metal halide perovskite, CsPbBr 3 . Scanning X-ray diffraction with a 60 nm beam was used to retrieve local structural properties for temperatures up to 140 °C. We observed a single Bragg peak at room temperature, but at 80 °C, four new Bragg peaks appeared, originating in different real-space domains. The domains were arranged in periodic stripes in the center and with a hatched pattern close to the edges. Reciprocal space mapping at 80 °C was used to quantify the local strain and lattice tilts, revealing the ferroelastic nature of the domains. The domains display a partial stability to further temperature changes. Our results show the dynamics of nanoscale ferroelastic domain formation within a single-crystal perovskite nanostructure, which is important both for the fundamental understanding of these materials and for the development of perovskite-based devices.

While various electronic components based on carbon nanotubes (CNTs) have already been demonstrated, the realization of miniature electromagnetic coils based on CNTs remains a challenge. Coils made of single-wall CNTs with accessible ends for contacting have been recently demonstrated but were found unsuitable to act as electromagnetic coils because of electrical shorting between their turns. Coils made of a few-wall CNT could in principle allow an insulated flow of current and thus be potential candidates for realizing CNT-based electromagnetic coils. However, no such CNT structure has been produced so far. Here, we demonstrate the formation of few-wall CNT coils and characterize their structural, optical, vibrational, and electrical properties using experimental and computational tools. The coils are made of CNTs with 2, 3, or 4 walls. They have accessible ends for electrical contacts and low defect densities. The coil diameters are on the order of one micron, like those of single-wall CNT coils, despite the higher rigidity of few-wall CNTs. Coils with as many as 163 turns were found, with their turns organized in a rippled raft configuration. These coils are promising candidates for a variety of miniature devices based on electromagnetic coils, such as electromagnets, inductors, transformers, and motors. Being chirally and enantiomerically pure few-wall CNT bundles, they are also ideal for fundamental studies of interwall coupling and superconductivity in CNTs.

Metal-halide perovskites have been shown to be remarkable and promising optoelectronic materials. However, despite ongoing research from multiple perspectives, some fundamental questions regarding their optoelectronic properties remain controversial. One reason is the high-variance of data collected from, often unstable, polycrystalline thin films. Here we use ordered arrays of stable, single-crystal cesium lead bromide (CsPbBr 3 ) nanowires grown by surface-guided chemical vapor deposition to study fundamental properties of these semiconductors in a one-dimensional model system. Specifically, we uncover the origin of an unusually large size-dependent luminescence emission spectral blue-shift. Using multiple spatially resolved spectroscopy techniques, we establish that bandgap modulation causes the emission shift, and by correlation with state-of-the-art electron microscopy methods, we reveal its origin in substantial and uniform lattice rotations due to heteroepitaxial strain and lattice relaxation. Understanding strain and its effect on the optoelectronic properties of these dynamic materials, from the atomic scale up, is essential to evaluate their performance limits and fundamentals of charge carrier dynamics.

Surface-guided growth of planar nanowires offers the possibility to control their position, direction, length, and crystallographic orientation and to enable their large-scale integration into practical devices. However, understanding of and control over planar nanowire growth are still limited. Here, we study theoretically and experimentally the growth kinetics of surface-guided planar nanowires. We present a model that considers different kinetic pathways of material transport into the planar nanowires. Two limiting regimes are established by the Gibbs-Thomson effect for thinner nanowires and by surface diffusion for thicker nanowires. By fitting the experimental data for the length-diameter dependence to the kinetic model, we determine the power exponent, which represents the dimensionality of surface diffusion, and results to be different for planar vs. nonplanar nanowires. Excellent correlation between the model predictions and the data is obtained for surface-guided Au-catalyzed ZnSe and ZnS nanowires growing on both flat and faceted sapphire surfaces. These data are compared with those of nonplanar nanowire growth under similar conditions. The results indicate that, whereas nonplanar growth is usually dominated by surface diffusion of precursor adatoms over the nanowire walls, planar growth is dominated by surface diffusion over the substrate. This mechanism of planar nanowire growth can be extended to a broad range of material-substrate combinations for higher control toward large-scale integration into practical devices., Competing Interests: The authors declare no competing interest.

The challenge of nanowire assembly is still one of the major obstacles toward their efficient integration into functional systems. One strategy to overcome this obstacle is the guided growth approach, in which the growth of in-plane nanowires is guided by epitaxial and graphoepitaxial relations with the substrate to yield dense arrays of aligned nanowires. This method relies on crystalline substrates which are generally expensive and incompatible with silicon-based technologies. In this work, we expand the guided growth approach into noncrystalline substrates and demonstrate the guided growth of horizontal nanowires along straight and arbitrarily shaped amorphous nanolithographic open guides on silicon wafers. Nanoimprint lithography is used as a high-throughput method for the fabrication of the high-resolution guiding features. We first grow five different semiconductor materials (GaN, ZnSe, CdS, ZnTe, and ZnO) along straight ridges and trenches, demonstrating the generality of this method. Through crystallographic analysis we find that despite the absence of any epitaxial relations with the substrate, the nanowires grow as single crystals in preferred crystallographic orientations. To further expand the guided growth approach beyond straight nanowires, GaN and ZnSe were grown also along curved and kinked configurations to form different shapes, including sinusoidal and zigzag-shaped nanowires. Photoluminescence and cathodoluminescence were used as noninvasive tools to characterize the sine wave-shaped nanowires. We discuss the similarities and differences between in-plane nanowires grown by epitaxy/graphoepitaxy and artificial epitaxy in terms of generality, morphology, crystallinity, and optical properties.

Misfit-layered compounds (MLCs) are formed by the combination of different lattices and exhibit intriguing structural and morphological characteristics. MLC Sr x La 1- x S-TaS 2 nanotubes with varying Sr composition (10, 20, 40, and 60 Sr atom %, corresponding to x = 0.1, 0.2, 0.4 and 0.6, respectively) were prepared in the present study and systematically investigated using a combination of high-resolution electron microscopy and spectroscopy. These studies enable detailed insight into the structural aspects of these phases to be gained at the atomic scale. The addition of Sr had a significant impact on the formation of the nanotubes with higher Sr content, leading to a decrease in the yield of the nanotubes. This trend can be attributed to the reduced charge transfer between the rare earth/S unit (La x Sr 1- x S) and the TaS 2 layer in the MLC which destabilizes the MLC lattice. The influence of varying the Sr content in the nanotubes was systematically studied using Raman spectroscopy. Density functional theory calculations were carried out to support the experimental observations.

The synthesis and characterization of nanotubes from misfit layered compounds (MLCs) of the type (LnS) 1+y TaS 2 (denoted here as LnS-TaS 2 ; Ln=Pr, Sm, Gd, and Yb), not reported before, are described (the bulk compound YbS-LaS 2 was not previously documented). Transmission electron microscopy and selected area electron diffraction showed that the interlayer spacing along the c axis decreased with an increase in the atomic number of the lanthanide atom, which suggested tighter interaction between the LnS layer and TaS 2 for the late lanthanides. The Raman spectra of the tubules were studied and compared to those of the bulk MLC compounds. Similar to the bulk MLCs, the Raman spectra could be divided into the low-frequency modes (110-150 cm -1 ) of the LnS lattice and the high-frequency modes (250-400 cm -1 ) of the TaS 2 lattice. The Raman spectra indicated that the vibrational lattice modes of the strained layers in the tubes were stiffer than those in the bulk compounds. Furthermore, the modes of the late lanthanides were higher in energy than those of the earlier lanthanides, which suggested larger charge transfer between the LnS and TaS 2 layers for the late lanthanides. Polarized Raman measurements showed the expected binodal intensity profile (antenna effect). The intensity ratio of the Raman signal showed that the E 2g mode of TaS 2 was more sensitive to the light-polarization effect than its A 1g mode. These nanotubes are expected to reveal interesting low-temperature quasi-1D transport behavior., (© 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.)

1D core-shell heterojunction nanostructures have great potential for high-performance, compact optoelectronic devices owing to their high interface area to volume ratio, yet their bottom-up assembly toward scalable fabrication remains a challenge. Here the site-controlled growth of aligned CdS-CdSe core-shell nanowalls is reported by a combination of surface-guided vapor-liquid-solid horizontal growth and selective-area vapor-solid epitaxial growth, and their integration into photodetectors at wafer-scale without postgrowth transfer, alignment, or selective shell-etching steps. The photocurrent response of these nanowalls is reduced to 200 ns with a gain of up to 3.8 × 10 3 and a photoresponsivity of 1.2 × 10 3 A W -1 , the fastest response at such a high gain ever reported for photodetectors based on compound semiconductor nanostructures. The simultaneous achievement of sub-microsecond response and high-gain photocurrent is attributed to the virtues of both the epitaxial CdS-CdSe heterojunction and the enhanced charge-separation efficiency of the core-shell nanowall geometry. Surface-guided nanostructures are promising templates for wafer-scale fabrication of self-aligned core-shell nanostructures toward scalable fabrication of high-performance compact photodetectors from the bottom-up., (© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

All-inorganic lead halide perovskite nanowires have been the focus of increasing interest since they exhibit improved stability compared to their hybrid organic-inorganic counterparts, while retaining their interesting optical and optoelectronic properties. Arrays of surface-guided nanowires with controlled orientations and morphology are promising as building blocks for various applications and for systematic research. We report the horizontal and aligned growth of CsPbBr 3 nanowires with a uniform crystallographic orientation on flat and faceted sapphire surfaces to form arrays with 6-fold and 2-fold symmetries, respectively, along specific directions of the sapphire substrate. We observed waveguiding behavior and diameter-dependent photoluminescence emission well beyond the quantum confinement regime. The arrays were easily integrated into multiple devices, displaying p-type behavior and photoconductivity. Photodetectors based on those nanowires exhibit the fastest rise and decay times for any CsPbBr 3 -based photodetectors reported so far. One-dimensional arrays of halide perovskite nanowires are a promising platform for investigating the intriguing properties and potential applications of these unique materials.

Tri-gate transistors offer better performance than planar transistors by exerting additional gate control over a channel from two lateral sides of semiconductor nanowalls (or "fins"). Here we report the bottom-up assembly of aligned CdS nanowalls by a simultaneous combination of horizontal catalytic vapor-liquid-solid growth and vertical facet-selective noncatalytic vapor-solid growth and their parallel integration into tri-gate transistors and photodetectors at wafer scale (cm 2 ) without postgrowth transfer or alignment steps. These tri-gate transistors act as enhancement-mode transistors with an on/off current ratio on the order of 10 8 , 4 orders of magnitude higher than the best results ever reported for planar enhancement-mode CdS transistors. The response time of the photodetector is reduced to the submicrosecond level, 1 order of magnitude shorter than the best results ever reported for photodetectors made of bottom-up semiconductor nanostructures. Guided semiconductor nanowalls open new opportunities for high-performance 3D nanodevices assembled from the bottom up.

The organization of nanowires on surfaces remains a major obstacle toward their large-scale integration into functional devices. Surface-material interactions have been used, with different materials and substrates, to guide horizontal nanowires during their growth into well-organized assemblies, but the only guided nanowire heterostructures reported so far are axial and not radial. Here, we demonstrate the guided growth of horizontal core-shell nanowires, specifically of ZnSe@ZnTe, with control over their crystal phase and crystallographic orientations. We exploit the directional control of the guided growth for the parallel production of multiple radial p-n heterojunctions and probe their optoelectronic properties. The devices exhibit a rectifying behavior with photovoltaic characteristics upon illumination. Guided nanowire heterostructures enable the bottom-up assembly of complex semiconductor structures with controlled electronic and optoelectronic properties.

One-dimensional semiconductor nanostructures, such as nanowires (NWs), have attracted tremendous attention due to their unique properties and potential applications in nanoelectronics, nano-optoelectronics, and sensors. One of the challenges toward their integration into practical devices is their large-scale controlled assembly. Here, we report the guided growth of horizontal CdSe nanowires on five different planes of sapphire. The growth direction and crystallographic orientation are controlled by the epitaxial relationship with the substrate as well as by a graphoepitaxial effect of surface nanosteps and grooves. CdSe is a promising direct-bandgap II-VI semiconductor active in the visible range, with potential applications in optoelectronics. The guided CdSe nanowires were found to have a wurtzite single-crystal structure. Field-effect transistors and photodetectors were fabricated to examine the nanowire electronic and optoelectronic properties, respectively. The latter exhibited the fastest rise and fall times ever reported for CdSe nanostructures as well as a relatively high gain, both features being essential for optoelectronic applications., Competing Interests: The authors declare no competing financial interest.

A major challenge toward large-scale integration of nanowires is the control over their alignment and position. A possible solution to this challenge is the guided growth process, which enables the synthesis of well-aligned horizontal nanowires that grow according to specific epitaxial or graphoepitaxial relations with the substrate. However, the guided growth of horizontal nanowires was demonstrated for a limited number of materials, most of which exhibit unintentional n-type behavior. Here we demonstrate the vapor-liquid-solid growth of guided horizontal ZnTe nanowires and nanowalls displaying p-type behavior on four different planes of sapphire. The growth directions of the nanowires are determined by epitaxial relations between the nanowires and the substrate or by a graphoepitaxial effect that guides their growth along nanogrooves or nanosteps along the surface. We characterized the crystallographic orientations and elemental composition of the nanowires using transmission electron microscopy and photoluminescence. The optoelectronic and electronic properties of the nanowires were studied by fabricating photodetectors and top-gate thin film transistors. These measurements showed that the guided ZnTe nanowires are p-type semiconductors and are photoconductive in the visible range. The guided growth of horizontal p-type nanowires opens up the possibility of parallel nanowire integration into functional systems with a variety of potential applications not available by other means.

Carbon nanotubes are promising building blocks for various nanoelectronic components. A highly desirable geometry for such applications is a coil. However, coiled nanotube structures reported so far were inherently defective or had no free ends accessible for contacting. Here we demonstrate the spontaneous self-coiling of single-wall carbon nanotubes into defect-free coils of up to more than 70 turns with identical diameter and chirality, and free ends. We characterize the structure, formation mechanism, and electrical properties of these coils by different microscopies, molecular dynamics simulations, Raman spectroscopy, and electrical and magnetic measurements. The coils are highly conductive, as expected for defect-free carbon nanotubes, but adjacent nanotube segments in the coil are more highly coupled than in regular bundles of single-wall carbon nanotubes, owing to their perfect crystal momentum matching, which enables tunneling between the turns. Although this behavior does not yet enable the performance of these nanotube coils as inductive devices, it does point a clear path for their realization. Hence, this study represents a major step toward the production of many different nanotube coil devices, including inductors, electromagnets, transformers, and dynamos.

The incorporation of nanostructures into nanoelectronic and nanoelectromechanical systems is a long sought-after goal. In the present article, we report the first torsional electromechanical measurements of pure inorganic nanotubes. The WS2 nanotubes exhibited a complex and reproducible electrical response to mechanical deformation. We combined these measurements with density-functional-tight-binding calculations to understand the interplay between mechanical deformation, specifically torsion and tension, and electrical properties of WS2 nanotubes. This yielded the understanding that the electrical response to mechanical deformation may span several orders of magnitude on one hand and detect several modes of mechanical deformation simultaneously on the other. These results demonstrate that inorganic nanotubes could thus be attractive building blocks for nanoelectromechanical systems such as highly sensitive nanometric motion sensors.

The charge transfer between neighboring single-walled carbon nanotubes (SWNTs) on a silicon oxide surface was investigated as a function of both the SWNT nature (metallic or semiconducting) and the anode/cathode distance using scanning probe techniques. Two main mechanisms were observed: a direct electron tunneling described by the typical Fowler-Nordheim model, and indirect electron transfer (hopping) mediated by functional groups on the supporting surface. Both mechanisms depend on the SWNT nature and on the anode/cathode separation: direct electron tunneling dominates the charge transfer process for metallic SWNTs, especially for large distances, while both mechanisms compete with each other for semiconducting SWNTs, prevailing one over the other depending on the anode/cathode separation. These mechanisms may significantly influence the design and operation of SWNT-based electronic devices.

This work addresses the problem of how a nano-object adheres to a supporting media. The case of study are the serpentine-like structures of single-wall carbon nanotubes (SWNTs) grown on vicinal crystalline quartz. We develop in situ nanomanipulation and confocal Raman spectroscopy in such systems, and to explain the results, we propose a dynamical equation in which static friction is treated phenomenologically and implemented as cutoff for velocities, via Heaviside step function and an adhesion force tensor. We demonstrate that the strain profiles observed along the SWNTs are due to anisotropic adhesion, adhesion discontinuities, strain avalanches, and memory effects. The equation is general enough to make predictions for various one- and two-dimensional nanosystems adhered to a supporting media.

Perfectly aligned horizontal ZnSe nano-wires are obtained by guided growth, and easily integrated into high-performance blue-UV photodetectors. Their crystal phase and crystallographic orientation are controlled by the epitaxial relations with six different sapphire planes. Guided growth paves the way for the large-scale integration of nanowires into optoelectronic devices., (© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)