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To understand the multiferroic behavior of the Y and Mn co-doped Bi0.9La0.1FeO3 system, we have synthesized Bi0.9La0.1FeO3 with the co-doped composition of Bi(0.9−a)YaLa0.1Fe (1−b)MnbO3 (a = 0.05, b = 0.05, 0.10, 0.15, 0.20, and a = 0.10, b = 0.10) using the solid-state reaction method. The role of Y and Mn co-doping on the structural, magnetic, ferroelectric, and dielectric properties were studied by various characterization techniques, such as x-ray diffraction, vibrating sample magnetometer (VSM), polarization–electric field (P–E) loop tracer, and dielectric measurements. X-ray diffraction studies show that a 5% doped sample is single phasic nature and crystallizes in rhombohedral (R3c) symmetry, whereas higher doped samples are dual-phase in nature with minor impurity Bi2Fe4O9 and crystallize in rhombohedral (R3c) and cubic (Pm-3 m) modulation in structural parameters with Y and Mn doping. The modulation in magnetic behavior with Y and Mn doping has been investigated and studied in the context of modification in the different interactions. P–E loop behavior is observed for lower Y (5%) and Mn (5, 10, 15%) doped samples, whereas a lossy/leaky loop is found for higher doped samples (Y-5, 10%, and Mn-20%). Lastly, the real and imaginary parts of dielectric permittivity indicate doping-induced increases in the values of ε′ and ε″. [ABSTRACT FROM AUTHOR]

BiFeO3 thin films were deposited onto single crystalline Si (100) substrate using Pulsed Laser Deposition technique. The effect of different oxygen partial pressure on the BiFeO3 film growth, structural and transport properties has been investigated. Structural characterization shows that film growth under lower partial pressure exhibits a minor impurity phase which gets suppressed under higher oxygen partial pressure (OP2). The effect of OP2 during the deposition on the leakage current and the role of oxygen vacancies have been understood in the context of various charge transport mechanism. RBS study confirms the presence of oxygen content in the film studied which are responsible for the modification in the Electrical behavior of BFO/Si thin film devices. [ABSTRACT FROM AUTHOR]