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Resistive random access memory (ReRAM), a new emerging nonvolatile memory technology based on changes in electrical resistivity of a dielectric film, offers promising advantages such as scalability, fast switching, and low operation voltage. However, for ReRAM to become a successful technology, it is necessary to accurately control the stochastic nature of the conductive nanoscale filaments (CNFs) that governs the resistive switching (RS) behavior of the device and limits its long-term stability and reliability. In this paper, we developed a highly scalable nanostructured/textured electrode that is composed of an array of Al nanotips based on an anodic aluminum oxide template. The nanotips improve the RS characteristics by intensifying the electric field at the apex of each nanotip which is demonstrated using numerical simulations. The localized electric field induces the repetitive nucleation/ formation/rupture of the CNFs in a more controlled fashion compared to a flat Al electrode. As a result, the nanotip sample exhibits uniform and reduced forming/reset voltages as low as 4.70 ± 0.98V/1.00 ± 0.19 V, stable endurance, and long-term retention. As a result, we were able to achieve ultralow-power and error-free operation of 100 cells covering a large area, significantly demonstrating improved uniformity and reliability compared to devices made using flat Al electrodes. This universal bottom-up strategy of self-organized nanostructured-electrodes provides a pathway toward large-scale, highly reliable, and RS memory devices.

Multifunctional electronics featuring optical transparency, portability, mechanical flexibility, light-weight and environment-friendly are of great demands for next-generation smart electronics. Memristor represents one of the important chains in next-generation devices as the information computing and storage component. Here, we design the transparent flexible structure based on van der Waals heteroepitaxial AZO/NiO/AZO/muscovite (ANA/muscovite) for a memristor application. The (ANA/muscovite) memristor satisfies all the hardest requirements of a transparent soft device such as optical transparency over 80% in visible light and high performance with a ON/OFF resistance ratio > 105, stable endurance to 103 cycles and long retention time of 105 s. In addition, the ANA/muscovite memristor can work at various bending radii down to 5 mm, a mechanical bending after 1000 cycles at a curvature with a radius of 6.5 mm and a high temperature up to 185 °C, which deliver a pathway for future applications in flexible transparent smart electronics.

Recently, the demonstration of the ferroelectricity of $\alpha$ phase In 2 Se 3 $(\alpha -$In 2 Se 3 ) has opened new opportunities to develop two-dimensional small bandgap ferroelectric memories. Conventional ferroelectric hetero-junction memories have been widely studied but the performance is still limited by the large bandgap of oxide-based ferroelectric materials and limits the diode ON current and results in low ON/OFF ratio. Accordingly, we propose a novel resistive switching memory device based on the unique ferroelectric and semiconductor properties of $\alpha -$In 2 Se 3 . By forming the hetero-junction of $\alpha -$In 2 Se 3 with the highly degenerated $\mathrm{p}^{+} -$Si substrate, we achieve a giant ferroelectric resistive ON/OFF ratio of $2.3 \times 10^{6}$.

Because of the ultralow photon energies at mid-infrared and terahertz frequencies, in these bands photodetectors are notoriously underdeveloped, and broadband single photon detectors (SPDs) are nonexistent. Advanced SPDs exploit thermal effects in nanostructured superconductors, and their performance is currently limited to the more energetic near-infrared photons due to their high electronic heat capacity. Here, we demonstrate a superconducting magic-angle bilayer graphene (MAG) device that is theoretically capable of detecting single photons of ultralow energies by utilizing its record-low heat capacity and sharp superconducting transition. We theoretically quantify its calorimetric photoresponse and estimate its detection limits. This device allows the detection of ultrabroad range single photons from the visible to sub-terahertz with a response time around 4 ns and energy resolution better than 1 THz. These attributes position MAG as an exceptional material for long-wavelength single photon sensing, which could revolutionize such disparate fields as quantum information processing and radio astronomy.

Ionic liquids (ILs) and ionic liquid-nanoparticle (IL-NP) hybrid electrolytes have garnered a lot of interest due to their unique properties that stimulate their use in various applications. Herein, we investigate the electrochemical and photo-physical properties of organic-inorganic hybrid electrolytes based on three imidazolium-based ionic liquids, i.e., 1-buthyl-3-methylimidazolium thiocyanate ([bmim] [SCN]), 1-ethyl-3-methylimidazolium tetrafluoroborate ([emim] [BF 4 ]) and 1-buthyl-3-methylimidazolium acetate ([bmim] [Ac]) that are covalently tethered to amorphous porous silicon nanoparticles (ap-Si NPs). We found that the addition of ap-Si NPs confer to the ILs a pronounced boost in the electrocatalytic activity, and in mixtures of ap-Si NPs and [bmim] [SCN], the room-temperature current transport is enhanced by more than 5 times compared to bare [bmim] [SCN]. A detailed structural investigation by transmission electron microscope (TEM) showed that the ap-Si NPs were well dispersed, stabilized and highly aggregated in [bmim] [SCN], [emim] [BF 4 ] and [bmim] [Ac] ILs, respectively. These observations correlate well with the enhanced current transport observed in ap-Si NPs/[bmim] [SCN] evidenced by electrochemical measurements. We interpreted these observations by the use of UV–vis absorbance, photoluminescence (PL), FTIR and solid-state NMR spectroscopy. We found that the ap-Si NPs/[bmim] [SCN] hybrid stands out due to its stability and optical transparency. This behavior is attributed to the iron(III) thiocyanate complexion as per the experimental findings. Furthermore, we found that the addition of NPs to [emim] [BF 4 ] alters the equilibrium of the IL, which consequently improved the stability of the NPs through intermolecular interactions with the two ionic layers (anionic and cationic layers) of the IL. While in the case of [bmim] [Ac], the dispersion of ap-Si NPs was restrained because of the high viscosity of this IL.

Memristive devices have been extensively demonstrated for applications in nonvolatile memory, computer logic, and biological synapses. Precise control of the conducting paths associated with the resistance switching in memristive devices is critical for optimizing their performances including ON/OFF ratios. Here, gate tunability and multidirectional switching can be implemented in memristors for modulating the conducting paths using hexagonal α-In2 Se3 , a semiconducting van der Waals ferroelectric material. The planar memristor based on in-plane (IP) polarization of α-In2 Se3 exhibits a pronounced switchable photocurrent, as well as gate tunability of the channel conductance, ferroelectric polarization, and resistance-switching ratio. The integration of vertical α-In2 Se3 memristors based on out-of-plane (OOP) polarization is demonstrated with a device density of 7.1 × 109 in.-2 and a resistance-switching ratio of well over 103 . A multidirectionally operated α-In2 Se3 memristor is also proposed, enabling the control of the OOP (or IP) resistance state directly by an IP (or OOP) programming pulse, which has not been achieved in other reported memristors. The remarkable behavior and diverse functionalities of these ferroelectric α-In2 Se3 memristors suggest opportunities for future logic circuits and complex neuromorphic computing.

Organic-inorganic mixed halide perovskites have emerged as an excellent class of materials with a unique combination of optoelectronic properties, suitable for a plethora of applications ranging from solar cells to light-emitting diodes and photoelectrochemical devices. Recent works have showcased hybrid perovskites for electronic applications through improvements in materials design, processing, and device stability. Herein, a comprehensive up-to-date review is presented on hybrid perovskite electronics with a focus on transistors and memories. These applications are supported by the fundamental material properties of hybrid perovskite semiconductors such as tunable bandgap, ambipolar charge transport, reasonable mobility, defect characteristics, and solution processability, which are highlighted first. Then, recent progresses on perovskite-based transistors are reviewed, covering aspects of fabrication process, patterning techniques, contact engineering, 2D versus 3D material selection, and device performance. Furthermore, applications of perovskites in nonvolatile memories and artificial synaptic devices are presented. The ambient instability of hybrid perovskites and the strategies to tackle this bottleneck are also discussed. Finally, an outlook and opportunities to develop perovskite-based electronics as a competitive and feasible technology are highlighted.

Ferroelectrics have been demonstrated as excellent building blocks for high-performance nonvolatile memories, including memristors, which play critical roles in the hardware implementation of artificial synapses and in-memory computing. Here, it is reported that the emerging van der Waals ferroelectric α-In2 Se3 can be used to successfully implement heterosynaptic plasticity (a fundamental but rarely emulated synaptic form) and achieve a resistance-switching ratio of heterosynaptic memristors above 103 , which is two orders of magnitude larger than that in other similar devices. The polarization change of ferroelectric α-In2 Se3 channel is responsible for the resistance switching at various paired terminals. The third terminal of α-In2 Se3 memristors exhibits nonvolatile control over channel current at a picoampere level, endowing the devices with picojoule read-energy consumption to emulate the associative heterosynaptic learning. The simulation proves that both supervised and unsupervised learning manners can be implemented in α-In2 Se3 neutral networks with high image recognition accuracy. Moreover, these heterosynaptic devices can naturally realize Boolean logic without an additional circuit component. The results suggest that van der Waals ferroelectrics hold great potential for applications in complex, energy-efficient, brain-inspired computing systems and logic-in-memory computers.

Schottky junctions formed between semiconductors and metal contacts are ubiquitous in modern electronic and optoelectronic devices. Here we report on the physical properties of Schottky-junctions formed on hybrid perovskite CH3NH3PbBr3 single crystals. It is found that light illumination can significantly increase the dielectric constant of perovskite junctions by 2300%. Furthermore, such Pt/perovskite junctions are used to fabricate self-biased photodetectors. A photodetectivity of 1.4 × 1010 Jones is obtained at zero bias, which increases to 7.1 × 1011 Jones at a bias of +3 V, and the photodetectivity remains almost constant in a wide range of light intensity. These devices also exhibit fast responses with a rising time of 70 μs and a falling time of 150 μs. As a result of the high crystal quality and low defect density, such single-crystal photodetectors show stable performance after storage in air for over 45 days. Our results suggest that hybrid perovskite single crystals provide a new platform to develop promising optoelectronic applications.

In this study, a simple and effective direct printing method was developed to print patterned nanowire thin films for UV detection. Inks containing silver or titanium dioxide (TiO2) nanowires were first formulated adequately to form stable suspension for inkjet printing applications. Sedimentation tests were also carried out to characterize the terminal velocity and dispersion stability of nanowires to avoid potential nozzle clogging problems. The well-dispersed silver nanowire ink was then inkjet printed on PET films to form patterned electrodes. Above the electrodes, another layer of TiO2 nanowires was also printed to create a highly transparent photodetector with >80% visible transmittance. The printed photodetector showed a fairly low dark current of 10−12–10−14 A with a high on/off ratio of 2000 to UV radiation. Under a bias voltage of 2 V, the detector showed fast responses to UV illumination with a rise time of 0.4 s and a recovery time of 0.1 s. More photo currents can also be collected with a larger printed electrode area. In summary, this study shows the feasibility of applying inkjet printing technology to create nanowire thin films with specific patterns, and can be further employed for photoelectric applications.

The recent development of 2D monolayer lateral semiconductor has created new paradigm to develop p-n heterojunctions. Albeit, the growth methods of these heterostructures typically result in alloy structures at the interface, limiting the development for high-efficiency photovoltaic (PV) devices. Here, the PV properties of sequentially grown alloy-free 2D monolayer WSe2 -MoS2 lateral p-n heterojunction are explores. The PV devices show an extraordinary power conversion efficiency of 2.56% under AM 1.5G illumination. The large surface active area enables the full exposure of the depletion region, leading to excellent omnidirectional light harvesting characteristic with only 5% reduction of efficiency at incident angles up to 75°. Modeling studies demonstrate the PV devices comply with typical principles, increasing the feasibility for further development. Furthermore, the appropriate electrode-spacing design can lead to environment-independent PV properties. These robust PV properties deriving from the atomically sharp lateral p-n interface can help develop the next-generation photovoltaics.

The surface effect on the photodetection of metal oxide nanostructures acting as a double-edged sword achieves ultrahigh photogain but unavoidably prolongs the response time due to slow oxygen adsorption/desorption processes. In this study, we break the compromise to enhance the UV photogain by 3 orders of magnitude as well as increase the photoresponse speed by 5 times via incorporating open-circuit p–n nanoscale heterojunctions (NHJs) by forming single-crystalline p-NiO nanoparticles on n-ZnO nanowires. This is because the formation of NHJs enhances surface band bending of ZnO nanowires, improving the spatial separation efficiency of photogenerated electrons and holes, and passivates the ZnO surfaces by minimizing the interaction of photocarriers with chemisorbed oxygen molecules. The concept using NHJs explores a new pathway toward ultrafast and supersensitive photodetection.

To explore the surface effect on resistive random-access memory (ReRAM), the impact of surface roughness on the characteristics of ZnO ReRAM was studied. The thickness-independent resistance and the higher switching probability of ZnO ReRAM with rough surfaces indicate the importance of surface oxygen chemisorption on the switching process. Furthermore, the improvements in switching probability, switching voltage, and resistance distribution observed for ReRAM with rough surfaces can be attributed to the stable oxygen adatoms under various ambience conditions. The findings validate the surface-controlled stability and the uniformity of ReRAM and can serve as the guideline for developing practical device applications.

Visible Light Communication (VLC) as a new technology for ultrahigh-speed communication is still limited when using slow modulation light-emitting diode (LED). Alternatively, we present a 4-Gbit/s VLC system using coherent blue-laser diode (LD) via 16-quadrature amplitude modulation orthogonal frequency division multiplexing. By changing the composition and the optical-configuration of a remote phosphor-film the generated white light is tuned from cool day to neutral, and the bit error rate is optimized from 1.9 × 10(-2) to 2.8 × 10(-5) in a blue filter-free link due to enhanced blue light transmission in forward direction. Briefly, blue-LD is an alternative to LED for generating white light and boosting the data rate of VLC.

This article presents a comprehensive review of the current research addressing the surface effects on physical properties and potential applications of nanostructured ZnO. Studies illustrating the transport, photoluminescence (PL), and photoconductivity properties of ZnO with ultrahigh surface-to-volume (S/V) ratio are reviewed first. Secondly, we examine recent studies of the applications of nanostructured ZnO employing the surface effect on gas/chemical sensing, relying on a change of conductivity via electron trapping and detrapping process at the surfaces of nanostructures. Finally, we comprehensively review the photovoltaic (PV) application of ZnO nanostructures. The ultrahigh S/V ratios of nanostructured devices suggest that studies on the synthesis and PV properties of various nanostructured ZnO for dye-sensitized solar cells (DSSCs) offer great potential for high efficiency and low-cost solar cell solutions. After surveying the current literature on the surface effects on nano-structured ZnO, we conclude this review with personal perspectives on a few surface-related issues that remain to be addressed before nanostructured ZnO devices can reach their ultimate potential as a new class of industrial applications.

Optical resonance formed inside a nanocavity resonator can trap light within the active region and hence enhance light absorption, effectively boosting device or material performance in applications of solar cells, photodetectors (PDs), and photocatalysts. Complementing conventional circular and spherical structures, a new type of multishelled spherical resonant strategy is presented. Due to the resonance-enhanced absorption by multiple convex shells, ZnO nanoshell PDs show improved optoelectronic performance and omnidirectional detection of light at different incidence angles and polarization. In addition, the response and recovery speeds of these devices are improved (0.8 and 0.7 ms, respectively) up to three orders of magnitude faster than in previous reports because of the existence of junction barriers between the nanoshells. The general design principles behind these hollow ZnO nanoshells pave a new way to improve the performance of sophisticated nanophotonic devices.

Transforming thermal energy into electric energy and vice versa needs the decoupling of electrical transport from thermal transport. An innovative strategy is proposed by forming/disrupting electrically triggered conductive nanofilaments within semiconducting thin films to switch thermoelectric properties between two states without further material modification and manufacturing processes. It can also controllably adjust the degree of decoupling, providing a potential resolution and performance adjustability for heat/coldness control or power consumption reduction on demand.

As devices shrink to the nanoscale, surface-to-volume ratio increases and the surface–environment interaction becomes a major factor for affecting device performance. The variation of electronic properties, including the surface band bending, gas chemisorption or photodesorption, native surface defects, and surface roughness, is called “surface effects”. Such effects are ambiguous because they can be either negative or beneficial effects, depending on the environmental conditions and device application. This review provides an introduction to the surface effects on different types of nanodevices, offering the solutions to respond to their benefits and negative effects and provides an outlook on further applications regarding the surface effect. This review is beneficial for designing nano-enabled photodetectors, harsh electronics, memories, sensors and transistors via surface engineering.

A fully transparent resistive memory (TRRAM) based on Hafnium oxide (HfO2) with excellent transparency, resistive switching capability and environmental stability is demonstrated. The retention time measured at 85 °C is over 3 × 104 sec and no significant degradation is observed in 130 cycling test. Compared with ZnO TRRAM, HfO2 TRRAM shows reliable performance under harsh conditions, such as high oxygen partial pressure, high moisture (relative humidity = 90% at 85 °C), corrosive agent exposure and proton irradiation. Moreover, HfO2 TRRAM fabricated in cross-bar array structures manifests the feasibility of future high density memory applications. These findings not only pave the way for future TRRAM design, but also demonstrate the promising applicability of HfO2 TRRAM for harsh environments.

With increasing interest in visible light communication, the laser diode (LD) provides an attractive alternative, with higher efficiency, shorter linewidth and larger bandwidth for high-speed visible light communication (VLC). Previously, more than 3 Gbps data rate was demonstrated using LED. By using LDs and spectral-efficient orthogonal frequency division multiplexing encoding scheme, significantly higher data rates has been achieved in this work. Using 16-QAM modulation scheme, in conjunction with red, blue and green LDs, data rates of 4.4 Gbps, 4 Gbps and 4 Gbps, with the corresponding BER/SNR/EVM of 3.3 × 10−3/15.3/17.9, 1.4 × 10−3/16.3/15.4 and 2.8 × 10−3/15.5/16.7were obtained over transmission distance of ~20 cm. We also simultaneously demonstrated white light emission using red, blue and green LDs, after passing through a commercially available diffuser element. Our work highlighted that a tradeoff exists in operating the blue LDs at optimum bias condition while maintaining good color temperature. The best results were obtained when encoding red LDs which gave both the strongest received signal amplitude and white light with CCT value of 5835K.

The surface effect on the photocarrier relaxation behavior using a single ZnO nanowire (NW) ultraviolet (UV) photodetector has been evaluated. The pronounced surface effect leads to the enhancement-mode field-effect-transistor behavior in dark and accounts for the slow relaxation behavior after switching off the illumination. The recovery of photocurrent is found to be strongly related to the intensity of UV light and the diameter of NWs, indicating that the photocarrier relaxation behavior is dominated by surface band bending (SBB). A model for the relaxation behavior based on the SBB of NWs is proposed to interpret the experimental results.

Organic-inorganic halide perovskite-based solar cells are the fastest-advancing photovoltaic technology in nowadays. To further increase optoelectronic applications on perovskite, researchers have devoted great efforts to explore two-dimensional (2D) layered halide perovskites very recently. This novel 2D perovskites can tune their optoelectronic properties by changing the thickness and functional organic group, which is not achievable for 3D perovskites. For 2D materials with ultra-thin thickness (usually less than 10 nm), the E-beam lithography is the most important fabrication process to build the nanostructures on materials to realize the nanodevices. However, the solvents used in current E-beam lithography can strongly destroy the perovskites. In this work, we fabricated the photodetector based on 2D (C6H5C2H4NH3)2PbI4 perovskite with nanoscale Au electrodes by using E-beam lithography process with orthogonal solvents. We show this new lithography method didn’t cause any damage to both optical and electrical properties of 2D perovskite. The I-V characteristics and photoresponse of perovskite photodetector were also measured. We believe this breakthrough will fully activate 2D perovskite for nano-applications.

We in situ probed the surface band bending (SBB) by ultraviolet photoelectron spectroscopy (UPS) in conjunction with field-effect transistor measurements on the incompletely depleted ZnO nanowires (NWs). The diameter range of the NWs is ca. 150-350 nm. Several surface treatments (i.e., heat treatments and Au nanoparticle (NP) decoration) were conducted to assess the impact of the oxygen adsorbates on the SBB. A 100 °C heat treatment leads to the decrease of the SBB to 0.74 ± 0.15 eV with 29.9 ± 3.0 nm width, which is attributed to the removal of most adsorbed oxygen molecules from the ZnO NW surfaces. The SBB of the oxygen-adsorbed ZnO NWs is measured to be 1.53 ± 0.15 eV with 43.2 ± 2.0 nm width. The attachment of Au NPs to the NW surface causes unusually high SBB (2.34 ± 0.15 eV with the wide width of 53.3 ± 1.6 nm) by creating open-circuit nano-Schottky junctions and catalytically enhancing the formation of the charge O(2) adsorbates. These surface-related phenomena should be generic to all metal oxide nanostructures. Our study is greatly beneficial for the NW-based device design of sensor and optoelectronic applications via surface engineering.

We investigate the photoelectrical and resistive switching properties of Pt/ZnO/Pt capacitor operated in unipolar mode under ultraviolet (UV) illumination. The oxygen photodesorption under UV illumination explains the photoconduction observed in initial and high resistance states. Meanwhile, oxygen readsorption at surface-related defects justifies the different photoresponses dynamics in both states. Finally, UV illumination significantly reduces the variations of resistance in high resistance state, set voltage and reset voltage by 58%, 33%, and 25%, respectively, stabilizing Pt/ZnO/Pt capacitor. Our findings in improved switching uniformity via UV light give physical insight into designing resistive memory devices.

A three-dimensional (3D) double-layer HfO2-based vertical-resistive random access memory (VRRAM) with low-resistivity C54-TiSi2 as horizontal electrodes is demonstrated using complementary metal-oxide semiconductor processing. The electrical measurements show bipolar resistive switching by using C54-TiSi2 as electrodes for resistive switching (RS) applications. The statistical analysis exhibits cycle-to-cycle and cell-to-cell stable non-volatile properties with robust endurance (100 cycles) and long term data retention (104 s), suggesting that the ultrathin sidewall of C54-TiSi2 nanoscale electrodes serve to confine and stabilize the random nature of the conducting nanofilaments. The superior RS characteristics demonstrated here highlight the applicability of C54-TiSi2 sidewall-confinement nanoscale electrodes to VRRAM.