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Large surface area applications such as high-efficiency > 26% solar cells require surface patterning with 1-10 micrometers periodic patterns at high fidelity over 1-10 cm^2 areas (before up scaling to 1 m^2) to perform at, or exceed, the Lambertian (ray optics) limit of light trapping. Here we show a pathway to high-resolution sub-1 micrometer etch mask patterning by ablation using direct femtosecond laser writing performed at room conditions (without the need for a vacuum-based lithography approach). A Bessel beam was used to alleviate the required high surface tracking tolerance for ablation of 0.3-0.8 micrometer diameter holes in ~40 nm alumina Al2O3-mask at high writing speed, 7.5 cm/s; a patterning rate 1 cm^2 per 20 min. The plasma etching protocol was optimised for a zero-mesa formation of photonic crystal (PhC) trapping structures and smooth surfaces at the nanoscale level. Scaling up in area and throughput of the demonstrated approach is outlined., Comment: 12 pages, 7 figures and 8 figures in appendix

Light trapping photonic crystal (PhC) patterns on the surface of Si solar cells provides a novel opportunity to approach the theoretical efficiency limit of 32.3%, for light-to-electrical power conversion with a single junction cell. This is beyond the efficiency limit implied by the Lambertian limit of ray trapping 29%. The interference and slow light effects are harnessed for collecting light even at the long wavelengths near the Si band-gap. We compare two different methods for surface patterning, that can be extended to large area surface patterning: 1) laser direct write and 2) step-&-repeat 5-times reduction projection lithography. Large area throughput limitations of these methods are compared with the established electron beam lithography (EBL) route, which is conventionally utilised but much slower than the presented methods. Spectral characterisation of the PhC light trapping is compared for samples fabricated by different methods. Reflectance of Si etched via laser patterned mask was 7% at visible wavelengths and was comparable with Si patterned via EBL made mask. The later pattern showed a stronger absorbance than the Lambertian limit (M.-L. Hsieh et al., Sci. Rep. 10, 11857 (2020))., Comment: 16 pages, 12 figures

Nanostructuring hard optical crystals has so far been exclusively feasible at their surface, as stress induced crack formation and propagation has rendered high precision volume processes ineffective. We show that the inner chemical etching reactivity of a crystal can be enhanced at the nanoscale by more than five orders of magnitude by means of direct laser writing. The process allows to produce cm-scale arbitrary three-dimensional nanostructures with 100 nm feature sizes inside large crystals in absence of brittle fracture. To showcase the unique potential of the technique, we fabricate photonic structures such as sub-wavelength diffraction gratings and nanostructured optical waveguides capable of sustaining sub-wavelength propagating modes inside yttrium aluminum garnet crystals. This technique could enable the transfer of concepts from nanophotonics to the fields of solid state lasers and crystal optics., Comment: Submitted Manuscript and Supplementary Information

Topology has been revealed to play a fundamental role in physics in the past decades. Topological insulators have unconventional gapless edge states where disorder-induced back-scattering is suppressed. In photonics, such edge states lead to unidirectional waveguides which are useful for integrated photonic chips. Cavity modes, another type of fundamental components in photonic chips, however, are not protected by band topology because of their lower dimensions. Here we demonstrate that concurrent wavevector-space and real-space topology, dubbed as the "dual-topology", can lead to light-trapping in lower-dimensions. The resultant photonic bound state emerges as a Jackiw-Rebbi soliton mode localized on a dislocation in a two-dimensional (2D) photonic crystal, as predicted theoretically and discovered experimentally. Such a strongly-confined 0D localized mode, which is solely due to the topological mechanism, is found to be robust against perturbations. Our study unveils a new mechanism for topological light-trapping in lower-dimensions, which is valuable for fundamental physics and a variety of applications in photonics.

We demonstrate that multiple topological transitions can occur, with high-sensitivity, by continuous change of the geometry of a simple 2D dielectric-frame photonic crystal consisting of circular air-holes. By changing the radii of the holes and/or the distance between them, multiple transitions between normal and topological photonic band gaps (PBGs) can appear. The time-reversal symmetric topological PBGs resemble the quantum spin-Hall insulator of electrons and have two counter-propagating edge states. We search for optimal topological transitions, i.e., sharp transitions sensitive to the geometry, and optimal topological PBGs, i.e., large PBGs with clean spectrum of edge states. Such optimizations reveal that dielectric-frame photonic crystals are promising for optical sensors and unidirectional waveguides., Comment: submitted to Phys. Rev. B

Semiconductor-microcavity polaritons are composite quasiparticles of excitons and photons, emerging in the strong coupling regime. As quantum superpositions of matter and light, polaritons have much stronger interparticle interactions compared with photons, enabling rapid equilibration and Bose-Einstein condensation (BEC). Current realizations based on 1D photonic structures, such as Fabry-P\'erot microcavities, have limited light-trapping ability resulting in picosecond polariton lifetime. We demonstrate, theoretically, above-room-temperature (up to 590 K) BEC of long-lived polaritons in MoSe$_2$ monolayers sandwiched by simple TiO$_2$ based 3D photonic band gap (PBG) materials. The 3D PBG induces very strong coupling of 40 meV (Rabi splitting of 62 meV) for as few as three dichalcogenide monolayers. Strong light-trapping in the 3D PBG enables the long-lived polariton superfluid to be robust against fabrication-induced disorder and exciton line-broadening.

We describe photonic crystal microcavities with very strong light-matter interaction to realize room-temperature, equilibrium, exciton-polariton Bose-Einstein condensation (BEC). This is achieved through a careful balance between strong light-trapping in a photonic band gap (PBG) and large exciton density enabled by a multiple quantum-well (QW) structure with moderate dielectric constant. This enables the formation of long-lived, dense 10~$\mu$m - 1~cm scale cloud of exciton-polaritons with vacuum Rabi splitting (VRS) that is roughly 7\% of the bare exciton recombination energy. We introduce a woodpile photonic crystal made of Cd$_{0.6}$Mg$_{0.4}$Te with a 3D PBG of 9.2\% (gap to central frequency ratio) that strongly focuses a planar guided optical field on CdTe QWs in the cavity. For 3~nm QWs with 5~nm barrier width the exciton-photon coupling can be as large as $\hbar\Ome=$55~meV (i.e., vacuum Rabi splitting $2\hbar\Ome=$110~meV). The exciton recombination energy of 1.65~eV corresponds to an optical wavelength of 750~nm. For $N=$106 QWs embedded in the cavity the collective exciton-photon coupling per QW, $\hbar\Ome/\sqrt{N}=5.4$~meV, is much larger than state-of-the-art value of 3.3~meV, for CdTe Fabry-P\'erot microcavity. The maximum BEC temperature is limited by the depth of the dispersion minimum for the lower polariton branch, over which the polariton has a small effective mass $\sim 10^{-5}m_0$ where $m_0$ is the electron mass in vacuum. By detuning the bare exciton recombination energy above the planar guided optical mode, a larger dispersion depth is achieved, enabling room-temperature BEC.

We present a microscopic model for a strongly repulsive electron gas on a 2D square lattice. We suggest that nearest neighbor Coulomb repulsion stabilizes a state in which electrons undergo a "somersault" in their internal spin-space (spin-flux). When this spin-1/2 antiferromagnetic (AFM) insulator is doped, the charge carriers nucleate mobile, charged, bosonic vortex solitons accompanied by unoccupied states deep inside the Mott-Hubbard charge-transfer gap. This model provides a unified microscopic basis for (i) non-Fermi-liquid transport properties, (ii) mid-infrared optical absorption, (iii) destruction of AFM long range order with doping, (iv) angled resolved spectroscopy (ARPES), and (v) d-wave preformed charged carrier pairs. We use the Configuration Interaction (CI) method to study the quantum translational and rotational properties of such pairs. The CI method systematically describes fluctuation and quantum tunneling corrections to the Hartree-Fock approximation and recaptures essential features of the (Bethe ansatz) exact solution of the Hubbard model in 1D. For a single hole in the 2D AFM plane, we find a precursor to spin-charge separation. The CI ground state consists of a bound vortex-antivortex pair, one vortex carrying the charge and the other one carrying the spin of the doping hole., Comment: 10 pages, 8 figures

The radiation dynamics of a dipole antenna embedded in a Photonic Crystal are modeled by an initially excited harmonic oscillator coupled to a non--Markovian bath of harmonic oscillators representing the colored electromagnetic vacuum within the crystal. Realistic coupling constants based on the natural modes of the Photonic Crystal, i.e., Bloch waves and their associated dispersion relation, are derived. For simple model systems, well-known results such as decay times and emission spectra are reproduced. This approach enables direct incorporation of realistic band structure computations into studies of radiative emission from atoms and molecules within photonic crystals. We therefore provide a predictive and interpretative tool for experiments in both the microwave and optical regimes., Comment: Phys. Rev. E, accepted

In (quant-ph/9911099 version 1) A. Moroz claims that the exponent $\eta$ from the local photon density of states near a band gap edge $\rho(\omega) = K(\vec{r}) |\omega_c - \omega|^\eta$ varies strongly with the position in the crystal. We show that this is not the case and we demonstrate the error in his analysis., Comment: 1 page, 1 figure, LaTeX in abstract

We investigate a microscopic model for strongly correlated electrons with both on-site and nearest neighbor Coulomb repulsion on a 2D square lattice. This exhibits a state in which electrons undergo a ``somersault'' in their internal spin-space (spin-flux) as they traverse a closed loop in external coordinate space. When this spin-1/2 antiferromagnetic (AFM) insulator is doped, the ground state is a liquid of charged, bosonic meron-vortices, which for topological reasons are created in vortex-antivortex pairs. The magnetic exchange energy of the distorted AFM background leads to a logarithmic vortex-antivortex attraction which overcomes the direct Coulomb repulsion between holes localized on the vortex cores. This leads to the appearance of pre-formed charged pairs. We use the Configuration Interaction (CI) Method to study the quantum translational and rotational motion of various charged magnetic solitons and soliton pairs. The CI method systematically describes fluctuation and quantum tunneling corrections to the Hartree-Fock Approximation (HFA). We find that the lowest energy charged meron-antimeron pairs exhibit d-wave rotational symmetry, consistent with the symmetry of the cuprate superconducting order parameter. For a single hole in the 2D AFM plane, we find a precursor to spin-charge separation in which a conventional charged spin-polaron dissociates into a singly charged meron-antimeron pair. This model provides a unified microscopic basis for (i) non-Fermi-liquid transport properties, (ii) d-wave preformed charged carrier pairs, (iii) mid-infrared optical absorption, (iv) destruction of AFM long range order with doping and other magnetic properties, and (v) certain aspects of angled resolved photo-emission spectroscopy (ARPES)., Comment: 14 pages, 17 figures

We demonstrate that the Configuration Interaction (CI) Approximation recaptures essential features of the exact (Bethe Ansatz) solution to the 1D Hubbard model. As such, it provides valuable route for describing effects which go beyond mean-field theory for strongly correlated electron systems in higher dimensions. The CI method systematically describes fluctuation and quantum tunneling corrections to the Hartree-Fock Approximation (HFA). HFA predicts that doping a half-filled Hubbard chain leads to the appearance of charged spin-polarons or charged domain-wall solitons in the antiferromagnetic (AFM) background. The CI method, on the other hand, describes the quantum dynamics of these charged magnetic solitons and quantum tunneling effects between various mean-field configurations. In this paper, we test the accuracy of the CI method against the exact solution of the one-dimensional Hubbard model. We find remarkable agreement between the energy of the mobile charged bosonic domain-wall (as given by the CI method) and the exact energy of the doping hole (as given by the Bethe Ansatz) for the entire $U/t$ range. The CI method also leads to a clear demonstration of the spin-charge separation in 1D. Addition of one doping hole to the half-filled antiferromagnetic chain results in the appearance of two different carriers: a charged bosonic domain-wall (which carries the charge but no spin) and a neutral spin-1/2 domain wall (which carries the spin but no charge)., Comment: 12 pages + 18 figures

The single photon occupation of a localized field mode within an engineered network of defects in a photonic band-gap (PBG) material is proposed as a unit of quantum information (qubit). Qubit operations are mediated by optically-excited atoms interacting with these localized states of light as the atoms traverse the connected void network of the PBG structure. We describe conditions under which this system can have independent qubits with controllable interactions and very low decoherence, as required for quantum computation., Comment: RevTeX, 4 pages, 2 figures

We discuss a point model for the collective emission of light from N two-level atoms in a photonic bandgap material, each with an atomic resonant frequency near the edge of the gap. In the limit of a low initial occupation of the excited atomic state, our system is shown to possess novel atomic spectra and population statistics. For a high initial excited state population, mean field theory suggests a fractionalized inversion and a macroscopic polarization for the atoms in the steady state, both of which can be controlled by an external d.c. field. This atomic steady state is accompanied by a non--zero expectation value of the electric field operators for field modes located in the vicinity of the atoms. The nature of homogeneous broadening near the band edge is shown to differ markedly from that in free space due to non-Markovian memory effects in the radiation dynamics. Non-Markovian vacuum fluctuations are shown to yield a partially coherent steady state polarization with a random phase. In contrast with the steady state of a conventional laser, near a photonic band edge this coherence occurs as a consequence of photon localization in the absence of a conventional cavity mode. We also introduce a classical stochastic function with the same temporal correlations as the electromagnetic reservoir, in order to stochastically simulate the effects of vacuum fluctuations near a photonic band edge., Comment: 16 pages, 15 Postscript figures. Submitted to Phys. Rev. A

We evaluate from first principles the self-consistent Hartree-Fock energies for multi-soliton configurations in a doped, spin-1/2, antiferromagnetic Mott insulator on a two-dimensional square lattice. We find that nearest-neighbor Coulomb repulsion stabilizes a regime of charged meron-antimeron vortex soliton pairs over a region of doping from 0.05 to 0.4 holes per site for intermediate coupling 3 < U/t <8. This stabilization is mediated through the generation of ``spin-flux'' in the mean-field antiferromagnetic (AFM) background. Holes cloaked by a meron-vortex in the spin-flux AFM background are charged bosons. Our static Hartree-Fock calculations provide an upper bound on the energy of a finite density of charged vortices. This upper bound is lower than the energy of the corresponding charged stripe configurations. A finite density of charge carrying vortices is shown to produce a large number of unoccupied electronic levels in the Mott-Hubbard charge transfer gap. These levels lead to significant band tailing and a broad mid-infrared band in the optical absorption spectrum as observed experimentally. At very low doping (below 0.05) the doping charges create extremely tightly bound meron-antimeron pairs or even isolated conventional spin-polarons, whereas for very high doping (above 0.4) the spin background itself becomes unstable to formation of a conventional Fermi liquid and the spin-flux mean-field is energetically unfavorable. Our results point to the predominance of a quantum liquid of charged, bosonic, vortex solitons at intermediate coupling and intermediate doping concentrations., Comment: 12 pages, 25 figures; added references, modified/eliminated some figures

We study quantum effects of light propagation through an extended absorbing system of two-level atoms placed within a frequency gap medium (FGM). Apart from ordinary solitons and single particle impurity band states, the many-particle spectrum of the system contains massive pairs of confined gap excitations and their bound complexes - gap solitons. In addition, ``composite'' solitons are predicted as bound states of ordinary and gap solitons. Quantum gap and composite solitons propagate without dissipation, and should be associated with self-induced transparency pulses in a FGM., Comment: 5 pages, RevTex

The many-particle spectrum of an isotropic frequency gap medium doped with impurity resonance atoms is studied using the Bethe ansatz technique. The spectrum is shown to contain pairs of quantum correlated ``gap excitations'' and their heavy bound complexes (``gap solitons''), enabling the propagation of quantum information within the classically forbidden gap. In addition, multiparticle localization of the radiation and the medium polarization occurs when such a gap soliton is pinned to the impurity atom., Comment: 8 pages, RevTEX, to appear in Phys. Rev. Lett