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DOPC liposome properties of various sizes were analyzed via atomic force microscopy (AFM) and patch-clamp. The unilamellarity of small DOPC liposome (below 1 μm) was confirmed via Cryogenic transmission electron microscopy (Cryo-TEM). Small DOPC liposome (below 1 μm) showed a bending modulus (kbend) ranging (between 10−18 and 10−20 J). The bending modulus value was a size dependence. In order words, it decreased as DOPC liposome size increased. For DOPC liposome (above 1 μm), patch-clamp was used to achieve electrically tight whole-cell configurations. Our result showed that the unilamellar DOPC liposome (above 1 μm) exhibit RC circuit response property. It was similar to theoretical values (τ = 4.52 ms) of the unilamellar liposome. In this study, the uniform lamellarity of the DOPC liposome of various sizes was confirmed through electrical and mechanical properties of DOPC liposome.

We prepare giant Quantum dot-Liposome Complexes (QLCs). Quantum dots (QDs) incorporated inside liposome above 10 μm. QLCs is made by using the electro-swelling method combined with spin coating techniques. Three types of PC lipids and asolectin lipid are used for QLCs with HDA (hexadecylamine) coated QDs, which ranged from blue- (diameter ~2.1 nm) to red-emission (diameter ~5.0 nm). As expected, (blue- or) green-emission QDs (smaller than) comparable to the thickness of PC lipid bilayer (~4 nm) are successfully formed QLCs, but QDs bigger than that fail to reproduce. This observation is well-consistent with those reported by Gopakumar et al. Surprisingly, all QDs irrespective of their size are, contrary to PC lipids, successfully loaded into asolectin lipid bilayer. In order to understand what makes different behaviors between PC and asolectin lipids on QLC formation, we suggest a theoretical model based on a geometrical assumptions for deformed lipid bilayer surrounding QD. The main advantage of this model is that the critical size Rcr of QD radius can be decided without calculating elastic free energy. As a result, it predicts that only QDs below the critical size (diameter ~3.0 nm) can be loaded in a typical PC-lipid, but all size of QDs can be incorporated into asolectin bilayer under the assumption of two different curvatures on deformed monolayer.

For improving the seismic performance of the nuclear power plant (NPP) piping system, attempts have been made to apply a dynamic absorber (DA). However, the current piping DA design method is limited because it cannot provide the globally optimum values for the target design seismic loading. Therefore, this study proposes a seismic time history analysis-based DA optimal design method for piping. To this end, the Kriging approach is introduced to reduce the numerical cost required for seismic time history analyses. The appropriate design of the experiment method is used to increase the efficiency in securing response data. A gradient-based method is used to efficiently deal with the multi-dimensional unconstrained optimization problem of the DA optimal design. As a result, the proposed method showed an excellent response reduction effect in several responses compared to other optimal design methods. The proposed method showed that the average response reduction rate was about 9% less at the maximum acceleration, about 5% less at the maximum value of the response spectrum, about 9% less at the maximum relative displacement, and about 4% less at the maximum combined stress compared to existing optimal design methods. Therefore, the proposed method enables an effective optimal DA design method for mitigating seismic response in NPP piping in the future.

The purpose of this study is to reduce seismic responses of an actual nuclear piping system using a tuned mass damper (TMD) device. A numerical piping model was developed and validated based on shaking table test results with actual nuclear piping. A TMD for nuclear piping was newly devised in this work. A TMD shape design suitable for nuclear piping systems was conducted, and its operating performance was verified after manufacturing. The response reduction performance of the developed TMD under earthquake loading on actual piping was investigated. Results confirmed that, on average, seismic response reduction rates of 34% in the maximum acceleration response, 41% in the root mean square acceleration response, and 57% in the spectral acceleration response were shown through the TMD application. This developed TMD operated successfully within the seismic response reduction rate of existing TMD optimum design values. Therefore, the developed TMD and dynamic interpretation help improve the nuclear piping's seismic performance.

A key challenge in the development of two-dimensional (2D) devices is the fabrication of metal–semiconductor junctions with minimal contact resistance and depinned energy levels. An ideal solution for practical applications is to make contacts between 2D van der Waals semiconductors and 2D van der Waals metals. Here we report the wafer-scale production of patterned layers of metallic transition metal ditellurides on different substrates. Our tungsten ditelluride and molybdenum ditelluride layers, which are grown using a tellurization process applied to a precursor transition metal layer, have an electronic performance comparable to that of mechanically exfoliated flakes and can be combined with the 2D semiconductor molybdenum disulfide. The resulting metal–semiconductor junctions are free from significant disorder effects and Fermi-level pinning, and are used to create monolayer molybdenum disulfide field-effect transistors. The Schottky barrier heights of the devices also largely follow the trend of the Schottky–Mott limit. Two-dimensional metallic WTe2 and MoTe2 layers can be combined with a semiconducting MoS2 monolayer to create metal–semiconductor junctions that are free from substantial disorder effects and Fermi-level pinning.

The practical application of 2D MXenes in electronic and energy fields has been hindered by the severe variation in the quality of MXene products depending on the parent MAX phases, manufacturing techniques, and preparation parameters. In particular, their synthesis has been impeded by the lack of studies reporting the synthesis of high-quality parent MAX phases. In addition, controllable and uniform deposition of 2D MXenes on various large-scale substrates is urgently required to use them practically. Herein, a method of pelletizing raw materials could synthesize a stoichiometric Ti3AlC2 MAX phase with high yield and processability, and fewer impurities. The Ti3AlC2 could be exfoliated into 1–2-atom-thick 2D Ti3C2Tx flakes, and their applicability was confirmed by the deposition and additional alignment of the 2D flakes with tunable thickness and electrical properties. Moreover, a practical MXene ink was fabricated with rheological characterization. MXene ink exhibited much better thickness uniformity while retaining excellent electrical performances (e.g., sheet resistance, electromagnetic interference shielding ability) as those of a film produced by vacuum filtration. The direct functional integration of MXenes on various substrates is expected to initiate new and unexpected MXene-based applications.

We investigate the effects of embedded graphene coating on the optical and microstructural properties of ultrathin InGaN/GaN multiple quantum wells (MQWs). The InGaN/GaN MQWs grown on graphene-buffered GaN templates displayed enhanced internal quantum efficiency compared to conventional ones and showed the internal electric field effect-free characteristic, desirable for general lighting applications. These phenomena were attributed to the enhancement of potential fluctuation with increased indium content and negligible piezoelectric polarization in ultrathin InGaN QWs, respectively. It was found that the atomically rough surface of GaN induced by embedded graphene coating efficiently relieved the biaxial compressive strain in the ultrathin InGaN/GaN QWs and enhanced the In incorporation efficiency during the InGaN growth, suggesting the potential use of atomic-thick carbon layer in niche optoelectronic applications.

Indium tin oxide-free, flexible transparent electrodes (TEs) are crucial for the future commercialization of flexible and wearable electronics. While carbon-based TEs containing carbon nanotube (CNT) networks show promise, they usually exhibit poor dispersion properties, limiting their performance and practicality. In this study, we report a highly efficient and bending durable all-carbon composite TE (ac-TE) that employs uniform CNT networks on a monolayer graphene/polyethylene terephthalate (PET) substrate via a simple air spray deposition method. The air-sprayed CNT/graphene assembly was free-standing on solution, making a polymer-free transfer of carbon composites to target substrates possible. The excellent performance of the ac-TEs was attributed to the uniformly networked CNTs on the polycrystalline graphene with a well-controlled density, effectively bridging the line defects and filling the tears/voids or folds necessarily existing in the as-processed graphene. The sheet resistance of the ac-TEs was increased only 6% from its original value at a bending radius of 2.7 mm, while that of the pristine graphene/PET assembly increased 237%. Mechanical bending of the ac-TEs worsened the electrical performance by only ∼1.7% after 2000 bending cycles at a bending radius of 2.5 mm. Degradation of the performance by the bending was the result of line defects formation in the graphene, demonstrating the potential of the uniform CNT networks to achieve more efficient and flexible carbon-based TEs. Furthermore, the chemically-doped ac-TEs showed commercially suitable electronic and optical properties with much enhanced thermal stability, closer to practical TEs in flexible devices.

The recent emergence of vertically stacked van der Waals (vdW) heterostructures provides new opportunities for these materials to be employed in a wide range of novel applications. Understanding the interlayer coupling in the stacking geometries of the heterostructures and its effect on the resultant material properties is particularly important for obtaining materials with desirable properties. Here, we report that the atomic bonding between stacked layers and thereby the interlayer properties of the vdW heterostructures can be well tuned by the substrate surface defects using WS2 flakes directly grown on graphene. We show that the defects of graphene have no significant effect on the crystal structure or the quality of the grown WS2 flakes; however, they have a strong influence on the interlayer interactions between stacked layers, thus affecting the layer deformability, thermal stability, and physical and electrical properties. Our experimental and computational investigations also reveal that WS2 flakes grown on graphene defects form covalent bonds with the underlying graphene via W atomic bridges (i.e., formation of larger overlapping hybrid orbitals), enabling these flakes to exhibit different intrinsic properties, such as higher conductivity and improved contact characteristics than heterostructures that have vdW interactions with graphene. This result emphasizes the importance of understanding the interlayer coupling in the stacking geometries and its correlation effect for designing desirable properties.

An overview of recent developments in controlled vapor-phase growth of 2D transition metal dichalcogenide (2D TMD) films is presented. Investigations of thin-film formation mechanisms and strategies for realizing 2D TMD films with less-defective large domains are of central importance because single-crystal-like 2D TMDs exhibit the most beneficial electronic and optoelectronic properties. The focus is on the role of the various growth parameters, including strategies for efficiently delivering the precursors, the selection and preparation of the substrate surface as a growth assistant, and the introduction of growth promoters (e.g., organic molecules and alkali metal halides) to facilitate the layered growth of (Mo, W)(S, Se, Te)2 atomic crystals on inert substrates. Critical factors governing the thermodynamic and kinetic factors related to chemical reaction pathways and the growth mechanism are reviewed. With modification of classical nucleation theory, strategies for designing and growing various vertical/lateral TMD-based heterostructures are discussed. Then, several pioneering techniques for facile observation of structural defects in TMDs, which substantially degrade the properties of macroscale TMDs, are introduced. Technical challenges to be overcome and future research directions in the vapor-phase growth of 2D TMDs for heterojunction devices are discussed in light of recent advances in the field.

Following the celebrated discovery of graphene, considerable attention has been directed toward the rich spectrum of properties offered by van der Waals crystals. However, studies have been largely limited to their 2D properties due to lack of 1D structures. Here, the growth of high-yield, single-crystalline 1D nanobelts composed of transition metal ditellurides at low temperatures (T ≤ 500 °C) and in short reaction times (t ≤ 10 min) via the use of tellurium-rich eutectic metal alloys is reported. The synthesized semimetallic 1D products are highly pure, stoichiometric, structurally uniform, and free of defects, resulting in high electrical performances. Furthermore, complete compositional tuning of the ternary ditelluride nanobelts is achieved with suppressed phase separation, applicable to the creation of unprecedented low-dimensional materials/devices. This approach may inspire new growth/fabrication strategies of 1D layered nanostructures, which may offer unique properties that are not available in other materials.

The development of ultrathin barrier films is vital to the advanced semiconductor industry. Graphene appears to hold promise as a protective coating; however, the polycrystalline and defective nature of engineered graphene hinders its practical applications. Here, we investigate the oxidation behavior of graphene-coated Cu foils at intrinsic graphene defects of different origins. Macro-scale information regarding the spatial distribution and oxidation resistance of various graphene defects is readily obtained using optical and electron microscopies after the hot-plate annealing. The controlled oxidation experiments reveal that the degree of structural deficiency is strongly dependent on the origins of the structural defects, the crystallographic orientations of the underlying Cu grains, the growth conditions of graphene, and the kinetics of the graphene growth. The obtained experimental and theoretical results show that oxygen radicals, decomposed from water molecules in ambient air, are effectively inverted at Stone–Wales defects into the graphene/Cu interface with the assistance of facilitators., Graphene holds promise as a protective coating; however, lattice defects may hinder its practical applicability. Here, the authors investigate the oxidation behavior of graphene-coated copper foils and unveil the interplay between structural defects and oxygen radicals from water molecules in ambient air.

In a nuclear power plant, it is essential to improve the seismic safety of the piping system for the coolant transfer to cool the high temperature caused by the nuclear reaction. Under this background, this study makes two major contributions. The first is that though tuned mass dampers (TMDs) were originally used only to reduce the vibration of piping itself, through this research, it was first proved that it had a positive effect on the improvement of the seismic performance of nuclear piping systems. Additionally, this study proposed a design approach that effectively obtains the optimal design values of TMDs associated with seismic performance. In order to effectively derive the TMD optimum design values, we not only utilized the existing TMD optimum design formula, but also additionally proposed a frequency response analysis-based TMD optimal design method. As a result, it was seen that primary responses of system were significantly reduced under the input seismic load due to the use of TMDs for the piping system. It was also confirmed that the use of the existing TMD formula brought about a similar degree of response reduction effect, while it was possible to get the improved effect when using the proposed method.

In article number 1801370, Soon‐Yong Kwon and co‐workers investigate single‐crystalline WTe2 nanobelts from a eutectic metal alloy, which can be a prominent interconnect candidate because of their superior electrical performance and robustness. The successful choice of new interconnect materials from the current 2D library will drive improvements to existing process technologies and will exploit the potential of the assembly of 2D atomic crystals into atomic crystal‐based systems and circuits.

Few-layer graphene films with a controllable thickness were grown on a nickel surface by rapid thermal annealing (RTA) under vacuum. The instability of nickel films in air facilitates the spontaneous formation of ultrathin (

As the elements of integrated circuits are downsized to the nanoscale, the current Cu‐based interconnects are facing limitations due to increased resistivity and decreased current‐carrying capacity because of scaling. Here, the bottom‐up synthesis of single‐crystalline WTe2 nanobelts and low‐ and high‐field electrical characterization of nanoscale interconnect test structures in various ambient conditions are reported. Unlike exfoliated flakes obtained by the top‐down approach, the bottom‐up growth mode of WTe2 nanobelts allows systemic characterization of the electrical properties of WTe2 single crystals as a function of channel dimensions. Using a 1D heat transport model and a power law, it is determined that the breakdown of WTe2 devices under vacuum and with AlOx capping layer follows an ideal pattern for Joule heating, far from edge scattering. High‐field electrical measurements and self‐heating modeling demonstrate that the WTe2 nanobelts have a breakdown current density approaching ≈100 MA cm−2, remarkably higher than those of conventional metals and other transition‐metal chalcogenides, and sustain the highest electrical power per channel length (≈16.4 W cm−1) among the interconnect candidates. The results suggest superior robustness of WTe2 against high‐bias sweep and its possible applicability in future nanoelectronics.

Graphene has recently attracted particular interest as a flexible barrier film preventing permeation of gases and moistures. However, it has been proved to be exceptionally challenging to develop large-scale graphene films with little oxygen and moisture permeation suitable for industrial uses, mainly due to the presence of nanometer-sized defects of obscure origins. Here, the origins of water permeable routes on graphene-coated Cu foils are investigated by observing the micrometer-sized rusts in the underlying Cu substrates, and a site-selective passivation method of the nanometer-sized routes is devised. It is revealed that nanometer-sized holes or cracks are primarily concentrated on graphene wrinkles rather than on other structural imperfections, resulting in severe degradation of its water impermeability. They are found to be predominantly induced by the delamination of graphene bound to Cu as a release of thermal stress during the cooling stage after graphene growth, especially at the intersection of the Cu step edges and wrinkles owing to their higher adhesion energy. Furthermore, the investigated routes are site-selectively passivated by an electron-beam-induced amorphous carbon layer, thus a substantial improvement in water impermeability is achieved. This approach is likely to be extended for offering novel barrier properties in flexible films based on graphene and on other atomic crystals.

Growth of large-scale patterned, wrinkle-free graphene and the gentle transfer technique without further damage are most important requirements for the practical use of graphene. Here we report the growth of wrinkle-free, strictly uniform monolayer graphene films by chemical vapor deposition on a platinum (Pt) substrate with texture-controlled giant grains and the thermal-assisted transfer of large-scale patterned graphene onto arbitrary substrates. The designed Pt surfaces with limited numbers of grain boundaries and improved surface perfectness as well as small thermal expansion coefficient difference to graphene provide a venue for uniform growth of monolayer graphene with wrinkle-free characteristic. The thermal-assisted transfer technique allows the complete transfer of large-scale patterned graphene films onto arbitrary substrates without any ripples, tears, or folds. The transferred graphene shows high crystalline quality with an average carrier mobility of ∼ 5500 cm(2) V(-1) s(-1) at room temperature. Furthermore, this transfer technique shows a high tolerance to variations in types and morphologies of underlying substrates.

Graphene oxide potentially has multiple applications and is typically prepared by solution-based chemical means. To date, the synthesis of a monolithic form of graphene oxide that is crucial to the precision assembly of graphene-based devices has not been achieved. Here we report the physical approach to produce monolithic graphene oxide sheets on copper foil using solid carbon, with tunable oxygen-to-carbon composition. Experimental and theoretical studies show that the copper foil provides an effective pathway for carbon diffusion, trapping the oxygen species dissolved in copper and enabling the formation of monolithic graphene oxide sheets. Unlike chemically derived graphene oxide, the as-synthesized graphene oxide sheets are electrically active, and the oxygen-to-carbon composition can be tuned during the synthesis process. As a result, the resulting graphene oxide sheets exhibit tunable bandgap energy and electronic properties. Our solution-free, physical approach may provide a path to a new class of monolithic, two-dimensional chemically modified carbon sheets.

We report the novel role of graphene substrates in obstructing the aging propagation in both the basal planes and edges of two-dimensitional sheets of transition metal dichalcogenides (TMDs). Even after 300 d in ambient air conditions, the epitaxially grown WS2/graphene samples have a clean, uniform surface without any encapsulation. We show that high crystallinity is an effective factor that determines the excellent air stability of WS2/graphene, and we present impressive experimental evidence of the relation between defects and the aging phenomena. Moreover, we reveal the strong interlayer charge interaction as an additional factor for the enhanced air stability as a result of charge transfer-induced doping. This work not only proposes a simple method to create highly stable TMDs by the selection of a suitable substrate but also paves the way for the realization of practical TMDs-based applications.

Large-area graphene films are best synthesized via chemical vapour and/or solid deposition methods at elevated temperatures (similar to 1,000 degrees C) on polycrystalline metal surfaces and later transferred onto other substrates for device applications. Here we report a new method for the synthesis of graphene films directly on SiO2/Si substrates, even plastics and glass at close to room temperature (25-160 degrees C). In contrast to other approaches, where graphene is deposited on top of a metal substrate, our method invokes diffusion of carbon through a diffusion couple made up of carbon-nickel/substrate to form graphene underneath the nickel film at the nickel-substrate interface. The resulting graphene layers exhibit tunable structural and optoelectronic properties by nickel grain boundary engineering and show micrometre-sized grains on SiO2 surfaces and nanometre-sized grains on plastic and glass surfaces. The ability to synthesize graphene directly on non-conducting substrates at low temperatures opens up new possibilities for the fabrication of multiple nanoelectronic devices.

The melting transition of nitrogen physisorbed on close-ended single-wall nanotube bundles was investigated using synchrotron X-ray diffraction measurements. The beta-nitrogen solid diffraction peak was observed above the coverage that corresponded to the monolayer and the average size of the nitrogen solid was approximately 30 A. The diffraction peak was surprisingly maintained above the triple point of the bulk nitrogen solid. The crystal structure of N2 changed from cubic N2 (beta-phase) to hexagonal N2 (beta-phase) at 35.61 K. The melting temperature of the nano-scale solid nitrogen in the experiment was between 80 K and 90 K, however, which is about 20 K higher than the melting temperature of normal bulk nitrogen. The observed extraordinary melting behavior of nitrogen might originate from a combination of two factors, i.e., the substrate field effect of the carbon nanotube surface (the interaction between the single walled carbon nanotubes and the adsorbates) and the capillary condensation. If the substrate field effect is especially prominent, the nitrogen molecules that were adsorbed mainly in the groove region would be under 1,100-Torr pressure from the nanotube bundles, compared to the corresponding melting temperature of the bulk beta-nitrogen solid under a high pressure.

A single-layer graphene has been uniformly grown on a Cu surface at elevated temperatures by thermal processing of a poly(methyl methacrylate) (PMMA) film in a rapid thermal annealing (RTA) system under vacuum. The detailed chemistry of the transition from solid-state carbon to graphene on the catalytic Cu surface was investigated by performing in situ residual gas analysis while PMMA/Cu-foil samples were being heated, in conjunction with interrupted growth studies to reconstruct ex situ the heating process. The data clearly show that the formation of graphene occurs by vaporizing hydrocarbon molecules from PMMA, such as methane and/or methyl radicals, which act as precursors, rather than by the direct graphitization of solid-state carbon. We also found that the temperature for vaporizing hydrocarbon molecules from PMMA and the length of time the gaseous hydrocarbon atmosphere is maintained, which are dependent on both the heating temperature profile and the amount of a solid carbon feedstock, are the dominant factors that determine the crystalline quality of the resulting graphene film. Under optimal growth conditions, the PMMA-derived graphene was found to have a carrier (hole) mobility as high as ∼2700 cm(2) V(-1) s(-1) at room temperature, which is superior to common graphene converted from solid carbon.

Today, state-of-the-art III-Ns technology has been focused on the growth of c-plane nitrides by metal-organic chemical vapor deposition (MOCVD) using a conventional two-step growth process. Here we show that the use of graphene as a coating layer allows the one-step growth of heteroepitaxial GaN films on sapphire in a MOCVD reactor, simplifying the GaN growth process. It is found that the graphene coating improves the wetting between GaN and sapphire, and, with as little as ~0.6 nm of graphene coating, the overgrown GaN layer on sapphire becomes continuous and flat. With increasing thickness of the graphene coating, the structural and optical properties of one-step grown GaN films gradually transition towards those of GaN films grown by a conventional two-step growth method. The InGaN/GaN multiple quantum well structure grown on a GaN/graphene/sapphire heterosystem shows a high internal quantum efficiency, allowing the use of one-step grown GaN films as 'pseudo-substrates' in optoelectronic devices. The introduction of graphene as a coating layer provides an atomic playground for metal adatoms and simplifies the III-Ns growth process, making it potentially very useful as a means to grow other heteroepitaxial films on arbitrary substrates with lattice and thermal mismatch.

It is observed that epitaxial graphene forms on the surface of a 6H-SiC substrate by irradiating electron beam directly on the sample surface in high vacuum at relatively low temperature (∼670 °C). The symmetric shape and full width at half maximum of 2D peak in the Raman spectra indicate that the formed epitaxial graphene is turbostratic. The gradual change of the Raman spectra with electron beam irradiation time increasing suggests that randomly distributed small grains of epitaxial graphene form first and grow laterally to cover the entire irradiated area. The sheet resistance of epitaxial graphene film is measured to be ∼6.7 kΩ/sq.

Growth of cubic InN (c-InN) under N-rich condition was achieved by metalorganic chemical vapour deposition on GaP(1 0 0) substrates with a cubic GaN (c-GaN) buffer layer. Insertion of the c-GaN buffer layer suppressed In droplet formation in c-InN. X-ray diffraction and transmission electron microscopy investigations showed that the InN layers have zincblende structure with only a small fraction of oxide phase inclusions and no significant hexagonal InN is present. By systemically varying growth conditions, it was found that the c-InN growth is dominated mainly by In adatoms' surface diffusion and InN surface decomposition and three distinct regimes of c-InN growth are observed. The growth of c-InN on c-GaN/GaP(1 0 0) templates eventually followed a three-dimensional growth mode in the thermally activated growth regime and density and size distribution of c-InN dots significantly changed with substrate temperature and growth rate. These results provide a stronger understanding of the growth mechanism to design and engineer InN-based nanostructures with desired shapes for potential technological applications.