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BackgroundThere is a clear association between micronutrients and Achilles tendon disease (AT). An increase in micronutrients may alleviate AT symptoms and have a therapeutic effect. The aim of this study is to clarify the causal relationship between 15 micronutrients (copper, zinc, magnesium, vitamins A, C, E, D, B6, B12, folic acid, carotene, iron, selenium, calcium, and potassium) and AT.MethodsWe employed the Mendelian randomization (MR) method to analyze the causal effects of micronutrients on the risk of AT. The SNPs related to micronutrients were obtained from a large-scale genome-wide association study (GWAS) of circulating micronutrients in European populations. Outcome data were obtained from a meta-analysis of AT in European-ancestry participants from the Finnish FINNGEN BIOBANK. The main analysis was conducted using the inverse variance weighting (IVW) method, with additional sensitivity and pleiotropy analyses performed.ResultsInverse variance weighting results indicated a causal relationship between copper and AT (P = 0.003, OR = 0.899, 95% CI = 0.839–0.964). Sensitivity analysis validated the robustness and reliability of this finding.ConclusionThis study revealed a causal relationship between copper and AT, with copper serving as a protective factor. This provides evidence of the causality between copper and AT, offering new insights for clinical research and therapeutic approaches in AT.

CuAlO2 was synthesized by a hydrothermal method, in which the Cu–O dimers were incorporated by simply altering the ratio of the reactants and the temperature. The incorporation process increases the grain size in CuAlO2, and modulates the work function and binding energies for CuAlO2 due to the partial substitution of Cu+ 3d10 with Cu2+ 3d9 orbitals in the valence band maximum by alloying non-isovalent Cu–O with a CuAlO2 host. Based on the ZnO nanorod arrays (NRs) ultraviolet photodetector, CuAlO2/Cu–O fabricated by the low-cost drop-coating method was used as the p-type hole transport layer. The incorporation of the Cu–O clusters into CuAlO2 lattice to enhance the conductivity of CuAlO2 is an effective way for improving ZnO NRs/CuAlO2 device performance. The photodetectors exhibit significant diode behavior, with a rectification ratio approaching 30 at ±1 V, and a dark saturation current density 0.81 mA cm−2. The responsivity of the ZnO-NRs-based UV photodetector increases from 13.2 to 91.3 mA/W at 0 V bias, with an increase in the detectivity from 2.35 × 1010 to 1.71 × 1011 Jones. Furthermore, the ZnO NRs/[CuAlO2/Cu–O] photodetector exhibits a maximum responsivity of 5002 mA/W at 1.5 V bias under 375 nm UV illumination.

Perovskite solar cells (PSCs) were fabricated using a two-step spin-coating method with MACl added to the inorganic layer. The properties of the perovskite films were characterized by SEM, XRD, PL, UV-vis spectra, etc. The morphology of the PbI2 film was significantly changed, and the formation of MACl-related intermediate phase was observed at the grain boundaries. The grain size and crystallinity of the perovskite film increased, and the morphology at grain boundaries was optimized, while the composition of perovskite remained unchanged. The introduction of MACl improved the open circuit voltage (VOC) and fill factor (FF) of PSCs, and the optimal device efficiency reached 21.59%. This paper presents a new approach using additives in inorganic layers to optimize the crystallization process for efficient PSCs.

Perovskite solar cells have exhibited astonishing photoelectric conversion efficiency and have shown a promising future owing to the tunable content and outstanding optoelectrical property of hybrid perovskite. However, the devices with planar architecture still suffer from huge Voc loss and severe hysteresis effect. In this research, Guanidine hydrobromide (GABr) post-treatment is carried out to enhance the performance of MAPbI3 n-i-p planar perovskite solar cells. The detailed characterization of perovskite suggests that GABr post-treatment results in a smoother absorber layer, an obvious reduction of trap states and optimized energy level alignment. By utilizing GABr post-treatment, the Voc loss is reduced, and the hysteresis effect is alleviated effectively in MAPbI3 solar cells. As a result, solar cells based on glass substrate with efficiency exceeding 20%, Voc of 1.13 V and significantly mitigated hysteresis are fabricated successfully. Significantly, we also demonstrate the effectiveness of GABr post-treatment in flexible device, whose efficiency is enhanced from 15.77% to 17.57% mainly due to the elimination of Voc loss.

In this work, the stability of unpackaged CdTe solar cells with different configurations was investigated according to the International Electrotechnical Commission IEC 61215-2016. The measurements of thermal cycling from -40°C to +85°C and 24-hour temperature cycling from -40°C to +85°C withstanding the effects of 20-hour penetration of 85°C were carried out in CdS/CdTe solar cells with structures of FTO/CdS/CdTe/Au, FTO/CdS/CdTe/back contact/Au, and FTO/MZO/CdS/CdTe/back contact/Au, respectively. The performances of these cells before and after the thermal aging experiments were investigated by using light and dark I‐V together with C‐V. The results reveal varied performance degradation before and after thermal aging in the cells with different structures. Among these, the most deteriorated device is the one without back contact (BC), whose efficiency decreased by 25.12% after thermal cycling accompanying an obvious roll-over phenomenon when forward bias was greater than open circuit voltage. On the contrary, the reduction in the efficiency was about 16.80% in the case cells with BC, and the roll-over phenomenon was not so significant. Furthermore, for the devices with optimized front contact of FTO/MZO, the thermal stability was improved obviously. Interestingly, short-circuit current density associated with the carrier concentration of cells remained relatively small variations compared with the change of Voc and fill factor. All the results indicated that an efficient back contact layer and an optimized front electrode were the indispensable structural elements to attain high stabilization in the CdS/CdTe solar cells.

Wider band-gap window layers can enhance the transmission of sunlight in the short-wavelength region and improve the performance of CdTe solar cells. In this work, we investigated the band structure of In-doped Zn1−xMgxO (ZMO:In) by using first-principles calculations with the GGA + U method and simulated the performance of ZMO:In/CdTe devices using the SCAPS program. The calculation results show that with the increased Mg doping concentration, the band gap of ZMO increases. However, the band gap of ZMO was decreased after In incorporation due to the downwards shifted conduction band. Owing to the improved short circuit current and fill factor, the conversion efficiency of the ZMO:In-based solar cells show better performance as compared with the CdS-based ones. A highest efficiency of 19.63% could be achieved owing to the wider band gap of ZMO:In and the appropriate conduction band offset (CBO) of ~0.23 eV at ZMO:In/CdTe interface when the Mg concentration x approaches 0.0625. Further investigations on thickness suggest an appropriate thickness of ZMO:In (x = 0.0625) in order to obtain better device performance would be 70–100 nm. This work provides a theoretical guidance for designing and fabricating highly efficient CdTe solar cells.

The light and dark output performances of CdS/CdTe solar cells made by close-spaced sublimation (CSS) were investigated to elucidate the transportation properties of carriers at CdS/CdTe heterojunction interface. It has been found that the interfacial transportation properties were relatively sensitive to variations of the characteristics of heterojunction due to the series resistance and shunting effects. For the high quality cell with 12.1% efficiency, narrow depletion region of ~1.1 microns and large electric field intensity of ~1.3 V/μm allow the sufficient energy-band bending close to CdS layer at CdS/CdTe heterojunction, which changes the carrier transportation mechanism from emission to diffusion and leads to the optimal rectifying characteristics with small dark saturation current density ~6.4 × 10−10 A/cm2. As a result, the schematic diagram of heterojunction band structure corresponding to various performances of solar cells has also been presented.

The copper telluride thin films were prepared by a coevaporation technique. The single-phase Cu1.4Te thin films could be obtained after annealing, and annealing temperature higher than 220°C could induce the presence of cuprous telluride coexisting phase. Cu1.4Te thin films also demonstrate the high carrier concentration and high reflectance for potential photovoltaic applications from the UV-visible-IR transmittance and reflectance spectra, and Hall measurements. With contacts such as Cu1.4Te and Cu1.4Te/CuTe, cell efficiencies comparable to those with conventional back contacts have been achieved. Temperature cycle tests show that the Cu1.4Te contact buffer has also improved cell stability.

One process of layer-by-layer sol-gel deposition without sulfurization was developed. The CZTS films with 1.2 μm and the sulfur ratio of ~48% were prepared and their characteristics were measured. The as-deposited and annealed films are of Kesterite structure. The as-deposited films do not present obvious electric conduction type. However, the annealed 9-LAY-ANN film is p-type conduction and has sheet resistance of 4.08 kΩ/□ and resistivity of 4.896 × 10−1 Ω·cm. The optic energy gap is 1.50 eV for as-deposited films and is 1.46 eV after being annealed. The region deposited by using Lo-Con solution is more compact than that by the Hi-Con solution from SEM morphology images.

Antimony telluride alloy thin films were deposited at room temperature by using the vacuum coevaporation method. The films were annealed at different temperatures in N2 ambient, and then the compositional, structural, and electrical properties of antimony telluride thin films were characterized by X-ray fluorescence, X-ray diffraction, differential thermal analysis, and Hall measurements. The results indicate that single phase antimony telluride existed when the annealing temperature was higher than 488 K. All thin films exhibited p-type conductivity with high carrier concentrations. Cell performance was greatly improved when the antimony telluride thin films were used as the back contact layer for CdTe thin film solar cells. The dark current voltage and capacitance voltage measurements were performed to investigate the formation of the back contacts for the cells with or without Sb2Te3 buffer layers. CdTe solar cells with the buffer layers can reduce the series resistance and eliminate the reverse junction between CdTe and metal electrodes.

Molybdenum-tellurium alloy thin films were fabricated by electron beam evaporation and the films were annealed in different conditions in N2 ambient. The hexagonal molybdenum ditelluride thin films with well crystallization annealed at 470°C or higher were obtained by solid state reactions. Thermal stability measurements indicate the formation of MoTe2 took place at about 350°C, and a subtle weight-loss was in the range between 30°C and 500°C. The evolution of the chemistry for Mo-Te thin films was performed to investigate the growth of the MoTe2 thin films free of any secondary phase. And the effect of other postdeposition treatments on the film characteristics was also investigated.

Zinc sulfide thin films have been deposited with hydrogen in Ar and Ar+H2 atmosphere by radio frequency magnetron sputtering. The thickness, structural properties, composition, surface morphology, and optical and electrical properties of the films have been investigated. Effect of hydrogen on the properties of the film was studied. The results showed that hydrogen leads to better crystallinity and larger crystallite size of ZnS polycrystalline films. The band gaps of the films in Ar+H2 are about 3.48 eV compared with 3.24 eV without hydrogen. It is also demonstrated that hydrogen can result in a better stoichiometric composition of the films.

Transparent ITO/ZnO and ITO/SnO2 complex conductive layers were prepared by DC- and RF-magnetron sputtering. Their structure and optical and electronic performances were studied by XRD, UV/Vis Spectroscopy, and four-probe technology. The interface characteristic and band offset of the ITO/ZnO, ITO/SnO2, and ITO/CdS were investigated by Ultraviolet Photoelectron Spectroscopy (UPS) and X-ray Photoelectron Spectroscopy (XPS), and the energy band diagrams have also been determined. The results show that ITO/ZnO and ITO/SnO2 films have good optical and electrical properties. The energy barrier those at the interface of ITO/ZnO and ITO/SnO2 layers are almost 0.4 and 0.44 eV, which are lower than in ITO/CdS heterojunctions (0.9 eV), which is beneficial for the transfer and collection of electrons in CdTe solar cells and reduces the minority carrier recombination at the interface, compared to CdS/ITO. The effects of their use in CdTe solar cells were studied by AMPS-1D software simulation using experiment values obtained from ZnO, ITO, and SnO2. From the simulation, we confirmed the increase of Eff, FF, Voc, and Isc by the introduction of ITO/ZnO and ITO/SnO2 layers in CdTe solar cells.

Chemical bath deposition (CBD) was used for the growth of thin films with low Zn content. The influence of preparation conditions, such as pH, temperature, and concentration, on film properties was investigated. The chemical growth mechanism of thin films was analyzed, and optimized growth conditions for the thin films were established. The fill factor and short-circuit current were improved while was used to replace CdS as the window layer in CdTe solar cells.

Tin oxide SnO2 films were prepared by RF magnetron sputtering. The effects of oxygen partial pressure percentage on the SnO2 property have been investigated to obtain relatively high-resistivity SnO2 films which could be used as buffer layers to optimize the performance of CdTe/CdS solar cells. The oxygen partial pressure percentage varied in the range of 1%~10%. The results show that the introduction of oxygen would suppress the deposition and growth of SnO2 films. Electrical measurement suggests that the film resistivity decreases with the increase of oxygen pressure. The SnO2 films with resistivity of 232 Ω cm were obtained in pure Ar atmosphere. All SnO2 films fabricated with different oxygen partial pressure percentage have almost the same optical band gap.

Sb2Te3 thin films were prepared by vacuum co-evaporation and the crystallinity of the films was greatly improved after annealing at 573 K in N2 ambient. Then they were deposited on the CdTe thick films. Band diagrams of the as-deposited and annealed CdTe/Sb2Te3 interfaces were constructed. Consequently, Sb2Te3 was used as a back contact layer for CdTe thin film solar cells and the cell performance was investigated. It was found that the Sb impurities accumulated in the CdTe grain boundaries diffuse deeply in the CdTe layer, and more photogenerated electrons and holes are separated by the segregated SbCd+ donors into the GBs. What is more, the doping concentration in the vicinity of the CdTe/CdS heterojunction increases for the formation of substitutional SbTe- acceptors under the Cd-rich conditions. For the introduction of the p-type Sb2Te3 layers as the back contact to the CdTe thin film solar cells, the performance of CdTe thin film solar cells has been greatly improved and an efficiency of 13.1% (FF=62.3%, Jsc=25.8 mA/cm2, Voc= 815.8 mV) obtained.

Cd1-xZnxS thin films have been prepared by the vacuum coevaporation method. The structural, compositional, and optical properties of Cd1-xZnxS thin films have been investigated using X-ray diffraction, X-ray fluorescence, and optical transmittance spectra. As-deposited Cd1-xZnxS thin films are polycrystalline and show the cubic structure for x=1 and hexagonal one for x

Deposition of Sb2Te3 thin films on soda-lime glass substrates by coevaporation of Sb and Te is described in this paper. Sb2Te3 thin films were characterized by x-ray diffraction (XRD), x-ray fluorescence (XRF), atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS), electrical conductivity measurements, and Hall measurements. The abnormal electrical transport behavior occurred from in situ electrical conductivity measurements. The results indicate that as-grown Sb2Te3 thin films are amorphous and undergo an amorphous-crystalline transition after annealing, and the posttreatment can effectively promote the formation of Sb-Te bond and prevent oxidation of thin film surface.

Objectives: Osteoarthritis (OA) is the most common age-related chronic and disabling joint disease, frequently causing pain and disability in the adult population. Given that there are no proven disease-modifying drugs for OA, it is urgent to gain a deeper understanding of OA pathogenesis. This study intended to uncover the circFOXK2 regulation in OA. Methods: First, an in vitro OA cell model was constructed by treating murine chondrocytes with interleukin (IL)-1β. Then, a series of functional assays were conducted to evaluate the effect of circFOXK2 on OA progression in murine chondrocytes. Bioinformatics analysis and mechanism investigations were performed to investigate the competitive endogenous ribonucleic acid (RNA) network of circFOXK2 in OA. Results: circFOXK2 is overexpressed in IL-1β-treated chondrocyte. We confirmed the cyclic structure and cytoplasmic distribution of circFOXK2. Functionally, circFOXK2 promotes chondrocyte apoptosis and extracellular matrix degradation but inhibits chondrocyte proliferation. Mechanically, circFOXK2 competitively binds to microRNA-4640-5p (miR-4640-5p) to enhance NOTCH2 expression in OA, affecting OA progression. Besides, circFOXK2 could motivate the NOTCH pathway to accelerate OA progression. Conclusions: The circFOXK2/miR-4640-5p/NOTCH2 axis stimulates the NOTCH pathway to promote the transcription of inflammatory cytokines (IL33, IL17F, and IL6), consequently facilitating OA progression in murine chondrocytes. [ABSTRACT FROM AUTHOR]

Wide-bandgap (WBG) perovskite solar cells (PSCs) play a crucial role in tandem devices. However, the severe nonradiative recombination that occurs at the interface between perovskite and electron transport layer (ETL) leads to excessive open-circuit voltage (VOC) loss, which hinders the further improvement of the photovoltaic conversion efficiency (PCE). To mitigate the VOC loss in WBG PSCs, the defects in grains and grain boundaries are reduced as well as the energy-level alignment between perovskite layer and ETL, so as to improve the carrier collection efficiency, is optimized. Herein, potassium thiocyanate is introduced as an additive and 2-thiophenethylammonium bromide (TEABr) is used to passivate perovskite/C60 interface. The synergistic treatment reduces the defect density and prolongs the carrier lifetime, implying that nonradiative recombination is effectively suppressed. Meanwhile, the energy-level alignment of the perovskite and C60 is optimized, leading to the improvement of VOC. Finally, WBG PSCs with a bandgap of 1.68 eV achieve a VOC of 1.22 V (with a VOC loss of 0.46 V) and a PCE of 22.02%. [ABSTRACT FROM AUTHOR]