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For the first time, we report the successful fabrication of well-behaved field-effect transistors based on Nb-doped β-Ga2O3 nanobelts mechanically exfoliated from bulk single crystals. The exfoliated β-Ga2O3 nanobelts were transferred onto a purified surface of the 110 nm SiO2/Si substrate. These Nb-doped devices showed excellent electrical performance such as an ultrasmall cutoff current of ∼10 fA, a high current on/off ratio of >108, and a quite steep subthreshold swing (SS, ∼120 mV/decade). Furthermore, we investigated the temperature dependence down to 200 K, providing insightful information for its operation in a harsh environment. This work lays a foundation for wider application of Nb-doped β-Ga2O3 in nano-electronics.

Objectives:To evaluate the effect of thrombus aspiration (TA) strategy on the outcomes and its interaction with D-dimer levels in patients with ST-segment elevation myocardial infarction (STEMI) during primary percutaneous coronary intervention (PCI) in “real-world” settings.Materials and Methods:This study included 1,295 patients with STEMI who had undergone primary PCI with or without TA between January 2013 and June 2017. Patients were first divided into a TA+PCI group and a PCI-only group, and the baseline characteristics and long-term mortality between the two groups were analyzed. Furthermore, we studied the effect of TA on the clinical outcomes of patients grouped according to quartiles of respective D-dimer levels. The primary outcome was all-cause mortality, and the secondary outcomes were new-onset heart failure (HF), rehospitalization, re-PCI, and stroke.Results:In the original cohort, there were no significant differences in all-cause mortality between the TA+PCI and PCI-only groups (hazard ratio, 0.789; 95% confidence interval, 0.556–1.120;p= 0.185). After a mean follow-up of 2.5 years, the all-cause mortality rates of patients in the TA + PCI and PCI-only groups were 8.5 and 16.2%, respectively. Additionally, differences between the two groups in terms of the risk of HF, re-PCI, rehospitalization, and stroke were non-significant. However, after dividing into quartiles, as the D-dimer levels increased, the all-cause mortality rate in the PCI group gradually increased (4.3 vs. 6.0 vs. 7.0 vs. 14.7%,p< 0.001), while the death rate in the TA+PCI group did not significantly differ (4.6 vs. 5.0 vs. 4.0 vs. 3.75%,p= 0.85). Besides, in the quartile 3 (Q3) and quartile 4 (Q4) groups, the PCI-only group was associated with a higher risk of all-cause mortality than that of the TA+PCI group (Q3: 4.0 vs. 7.0%,p= 0.029; Q4: 3.75 vs. 14.7%,p< 0.001). Moreover, the multivariate logistic regression analysis demonstrated that TA is inversely associated with the primary outcome in the Q4 group [odds ratio (OR), 0.395; 95% CI, 0.164–0.949;p= 0.038].Conclusions:The findings of our real-world study express that routine manual TA during PCI in STEMI did not improve clinical outcomes overall. However, patients with STEMI with a higher concentration of D-dimer might benefit from the use of TA during primary PCI. Large-scale studies are recommended to confirm the efficacy of TA.

The issue of contacts between the electrode and channel layer is crucial for wide-bandgap semiconductors, especially the β-Ga2O3 due to its ultra-large bandgap (4.6–4.9 eV). It affects the device p...

Diethylzinc and H2O were used as the precursors for the thermal atomic layer deposition (TH-ALD) of ZnO deposition while the trimethylgallium and O2 plasma were used as a reactant for the plasma-enhanced atomic layer deposition (PE-ALD) of Ga2O3, respectively. The Zn-doped Ga2O3 (ZGO) films were fabricated by a combination of PE-ALD of Ga2O3 and TH-ALD of ZnO at a low temperature of 200 °C. The results show that as-deposited ZGO films were amorphous while ZnO with a crystalline structure. XPS results indicate that the Zn content in ZGO films increased from 9.70 to 24.65 at.% with the cycle ration of Ga2O3 with respect to ZnO decreasing from 7:1 to 3:1 while the oxygen vacancy increased from 27.65% to 37.93%. The rise in Zn doping contents is also accompanied by significant variations in the morphological, electrical, and optical properties of the ZGO films, including a decrease of film density and resistivity, an increase of RMS roughness, a strong transmittance in the ultraviolet-visible (UV–vis) area, and a widening of the band gap from 4.64 to 5.25 eV. These findings help deposit ZGO films with desired structure and properties for electronic device applications.

Thin Ga2O3 films were grown on Si (100) using trimethylgallium (TMG) and oxygen as the precursors through plasma-enhanced atomic layer deposition. The depositions were made over a temperature range of 80–250 °C with a growth per cycle of around 0.07 nm/cycle. Surface self-saturating growth was obtained with TMG pulse time ≥20 ms at a temperature of 150 °C. The root mean square surface roughness of the obtained Ga2O3 films increased from 0.1 nm to 0.3 nm with increasing the growth temperature. Moreover, the x-ray photoelectron spectroscopy analysis indicated that the obtained film was Ga-rich with the chemical oxidation states Ga3+ and Ga1+, and no carbon contamination was detected in the films after Ar+ sputtering. The electron density of films measured by x-ray reflectivity varied with the growth temperature, increasing from 4.72 to 5.80 g/cm3. The transmittance of Ga2O3 film deposited on a quartz substrate was obtained through ultraviolet visible (UV–Vis) spectroscopy. An obvious absorption in the deep UV region was demonstrated with a wide band gap of 4.6–4.8 eV. The spectroscopic ellipsometry analysis indicated that the average refractive index of the Ga2O3 film was 1.91 at 632.8 nm and increased with the growth temperature due to the dense structure of the films. Finally, the I-V and C-V characteristics proved that the Ga2O3 films prepared in this work had a low leakage current of 7.2 × 10−11 A/cm2 at 1.0 MV/cm and a high permittivity of 11.9, suitable to be gate dielectric.

An asymmetric dual-gate (DG) MoS

In this work, wafer-scale continuous and uniform MoS2/(HfO2) x (Al2O3)1−x (HfAlO) heterojunctions were prepared by atomic layer deposition. The energy band alignment of MoS2/HfAlO heterojunctions was systematically investigated using x-ray photoelectron spectroscopy. The valence band offsets were deduced to be 3.19 ± 0.1, 3.01 ± 0.1, 2.94 ± 0.1, and 2.91 ± 0.1 eV for the heterojunctions of MoS2/Al2O3, MoS2/(HfO2)0.45(Al2O3)0.55, MoS2/(HfO2)0.60(Al2O3)0.40 and MoS2/(HfO2)0.78(Al2O3)0.22, while the conduction band offsets were measured as 2.51 ± 0.1, 2.17 ± 0.1, 2.00 ± 0.1, and 1.85 ± 0.1 eV, respectively. All MoS2/HfAlO interfaces exhibited type-I band alignment. Furthermore, a MoS2 field-effect transistor with HfAlO as the gate dielectric layer was fabricated, and the gate leakage of the device was only a few picoamperes, which ensured high reliability and low power consumption. These encouraging results suggest that HfAlO is a promising dielectric material for applications in MoS2-based electronics and optoelectronics.

The radiation characteristics of vertical GaN-on-GaN Schottky barrier diodes (SBD) by the bias of +0.8 V and -5.0 V have been investigated with four different doses of the total ionizing dose irradiation for the first time. The off-state current decreases by ~99 % for X-ray doses of 80 krad due to the trapping of electrons at the nitrogen vacancies and the barrier height increases. The off-state current for X-ray doses above 160 krad increases owing to the effects of X-ray radiation induced carrier generation over occupation of defect sites. The leakage current still reduces compared with that of the pristine device even after 400 krad X-ray doses. Moreover, the effect of X-ray irradiation on the physical characteristics has been analysed by X-ray diffraction (XRD), Micro-raman, and photoluminescence (PL) measurements. This study provides an evidence for improved performance of GaN SBD devices by using a certain dosage treatment of X-ray.

The effects of x-ray irradiation on the mechanically exfoliated quasi-two-dimensional (quasi-2D) β-Ga

Ultrathin Ga2O3 films nanomixed with few atom-thick SiO2 interlayer were deposited on silicon and quartz substrates through plasma-enhanced atomic layer deposition. Upon adjusting the number of SiO2 atomic layers, different Si doping levels in Ga2O3 films were obtained. Herein, we report for the first time the use of this method to investigate the doping effect and realize the precise control of the microstructural, optical, and electrical properties of the Ga2O3 films. The experimental results indicated that the microstructural properties such as density, roughness, and chemical composition of the films are all affected by the number of doped SiO2 atomic layers. As the Si doping concentration increased in the films, the refractive index of the Ga2O3 films decreased monotonically, the optical transparency improved, and the average transmittances were >95% from ultraviolet to visual wavelengths for all the Si-doped Ga2O3 films. Moreover, the energy band-gap increased with the increase in Si composition, increasing from ∼4.8 eV for the undoped film to ∼5.1 eV for the film with a 20 at% Si doping level. Moreover, the breakdown field of the Ga2O3 film linearly improved from 6.8 MV cm−1 to 10.7 MV cm−1 as a function of the Si content. More importantly, this result enlightened us that the breakdown field of the Ga2O3 film can be further improved by increasing the Si doping concentration. This study provides a means to expand the properties of the new doped films and develop Ga2O3 film-based devices, such as transparent electrodes, photodetectors, thin film transistors, or high-power high-voltage devices.

The AlON film with homogeneous nitrogen-doping profile was grown by plasma-enhanced atomic layer deposition (PEALD) at low temperature. In this work, the precursors of the NH3 and the O2 were simultaneously introduced into the chamber during the PEALD growth at a relatively low temperature of 185 °C. It is found that the composition of the obtained film quickly changes from AlN to Al2O3 when a small amount of O2 is added. Thus, the NH3:O2 ratio should be maintained at a relatively high level (>85%) for realizing the AlON growth. Benefited from the growth method, the nitrogen can be doped evenly in the entire film. Moreover, the AlON films exhibit a lower surface roughness than the AlN as well as the Al2O3 ones. The Al 2p and N 1s X-ray photoelectron spectra show that the AlON film is composed of Al–N, Al–O, and N–Al–O bonds. Moreover, a three-layer construction of the AlON film is proposed through the Si 2p spectra analysis and reconfirmed by the transmission electron microscopy characterization. At last,...

The issue of contacts between the electrode and channel layer is crucial for wide-bandgap semiconductors, especially the β-Ga

An asymmetric dual-gate (DG) MoS2 field-effect transistor (FET) with ultrahigh electrical performance and optical responsivity using atomic-layer-deposited HfO2 as a top-gate (TG) dielectric was fabricated and investigated. The effective DG modulation of the MoS2 FET exhibited an outstanding electrical performance with a high on/off current ratio of 6 × 108. Furthermore, a large threshold voltage modulation could be obtained from −20.5 to −39.3 V as a function of the TG voltage in a DG MoS2 phototransistor. Meanwhile, the optical properties were systematically explored under a series of gate biases and illuminated optical power under 550 nm laser illumination. An ultrahigh photoresponsivity of 2.04 × 105 AW−1 has been demonstrated with the structure of a DG MoS2 phototransistor because the electric field formed by the DG can separate photogenerated electrons and holes efficiently. Thus, the DG design for 2D materials with ultrahigh photoresponsivity provides a promising opportunity for the application of optoelectronic devices.

The effects of x-ray irradiation on the mechanically exfoliated quasi-two-dimensional (quasi-2D) β-Ga2O3 nanoflake field-effect transistors (FETs) under the condition of biasing voltage were systematically investigated for the first time. It has been revealed that the device experienced two stages during irradiation. At low ionizing doses ( 240 krad), the device characteristics are dominated by the radiation-induced structural or compositional deterioration. The newly-generated e-traps are found located at the SiO2/β-Ga2O3 interface. This study shed light on the future radiation-tolerant device fabrication process development, paving a way towards the feasibility and practicability of β-Ga2O3-based devices in extreme-environment applications.

The engineering vehicle cab FOPS (falling-object protective structures) mainly contain two parts: top guard and front guard. According to the characteristics of the engineering vehicle cab security architectures, the simulation that top guard is impacted by the falling hammer is made by non-linear analysis software – LS-DYNA. The breakage phenomenon is also researched. The stiffness of the top guard is so weak that the hammer’s displacement is too large, which leads to the impact resistance of top guard is unqualified. Based on this, the cause of the stiffness insufficient is researched. By orthogonal experimental design for the dominant factors, it makes the simulation performance of the top guard meet the requirements of the national standard. On this basis, the simulation mechanical bearing capacity of the front guard is done by LS-DYNA, while the experimental research is also accomplished. By contrasting the result of simulation and experiment, it turns that simulative result coincides with the experimental well.

Antimonide based III-V materials are widely used in quantum-well transistors and long wavelength optoelectronic devices benefit from their narrow bandgaps and high carrier mobilities. Interface chemistry has proven to be important in establishing reliable devices. The InSb/HfO2 stacks have been systematically studied upon atomic layer deposition (ALD) and rapid thermal annealing (RTA) at 325 °C and 400 °C, utilizing X-ray photoelectron spectroscopy (Al Kα1) and synchrotron radiation photoemission spectroscopy. No “clean up” effect was observed after the ALD process. The interface oxidization, elemental diffusion and substrate oxide desorption have been observed upon the RTA process. This work highlights the importance of substrate passivation prior to ALD process to obtain a thermally stable InSb/HfO2 interface for InSb based devices.

A real time strain measuring device has been designed in allusion to multi-angle influence on springback in shaped parts. The strain has been studied at the shaping of part with different bend angles’ numbers. The multi-angle draw-bending forming and springback mechanism have been observed by metallurgical structure searching.

The energy band alignment of AlN/β-Ga2O3 heterostructures was investigated by X-ray photoelectron spectroscopy. The valence band offsets were estimated to be −0.09 ± 0.1 eV (type II alignment) for AlN grown by plasma enhanced atomic layer deposition (PEALD) on β-Ga2O3 and 0.72 ± 0.1 eV (type I alignment) for AlN prepared by thermal atomic layer deposition (T-ALD) on β-Ga2O3, which gives the conduction band offsets of 1.39 ± 0.1 eV for PEALD AlN and 0.58 ± 0.1 eV for T-ALD AlN. The large difference in the band alignment for the AlN/β-Ga2O3 heterostructures is dominated by different levels of oxygen incorporation into the AlN films as a result of different deposition techniques. The determination of the band alignment of the AlN/β-Ga2O3 heterostructure has significant implications for the design of electronic and optical devices based on AlN/β-Ga2O3 heterojunctions.

The effects of sowing date, nitrogen application level and timing on barley protein components and malt quality were investigated. There was a significant difference in total protein and its protein fractions among the four barley genotypes. The protein component was changeable over the different growing conditions, and the extent of change varied with protein fraction and genotype. Marked variation in malt quality over the different environments (sowing date, N fertilizer rate and applying time) was also observed. Increased N fertilizer application increased diastatic power (DP) value, but reduced malt extract. Grain protein content was significantly and positively correlated with albumin, globulin and hordein, but was not correlated with glutelin. However, glutelin was significantly related to other malt quality parameters.

A hydroponic experiment was carried out utilizing four barley genotypes with differing salt tolerances to investigate the influence of salinity (NaCl) and cadmium (Cd) on the activities of antioxidant enzymes, sodium (Na) and Cd concentrations, and accumulation in plants. The activities of the two antioxidant enzymes, superoxide dismutase (SOD) and peroxidase (POD), were significantly increased when plants were exposed to both Na and Cd stresses for all genotypes, relative to the control. The increased enzymatic activity was more predominant with a prolonged time of stress exposure. The combined stress (NaCl+Cd) led to a further increase in POD activity, but had little effect on SOD activity. Two salt-tolerant genotypes, ‘Gebeina’ and ‘Zhou 1,’ showed a more rapid increase of POD and SOD activities than the two salt-sensitive genotypes, ‘Newgoutei’ and ‘Quzhou’ in response to the combined stress treatment. Additions of NaCl to the Cd-containing medium caused a significant reduction in both Cd con...

The effect of salinity on some physiological parameters in 16 barley genotypes with different salt tolerance was investigated. The results showed 50 mM NaCl treatment increased Na+/K+ ratio, malondialdehyde (MDA) and proline contents, and decreased cell membrane stability index (CMSI) and fresh shoot biomass (FSB) of all tested genotypes. Salt stress also resulted in a decreased chlorophyll (Chl) content and net photosynthesis (Pn) for most genotypes. Under higher salt stress (300 mM NaCl), the marked increase for Na+/K+, MDA, and proline content, and decrease for other parameters were found for all genotypes. The affected extent of these parameters by salt stress varied with genotypes. Proline accumulation in barley was associated with injured extent under salt stress, indicating it is not a defensive reaction to the stress. K+ uptake was less affected, whereas Na+ accumulation in plants was enhanced under high salt stress. The correlation analysis showed that MDA and proline content, Na+ concen...

The effects of different timing of N fertilizer application at the same rate on grain beta-amylase activity, protein concentration, weight and malt quality of barley were studied. Grain beta-amylase activity and protein concentration were significantly higher in treatments where all top-dressed N fertilizer was applied at booting stage only or equally applied at two-leaf stage and booting stage than in the treatment where all top-dressed N fertilizer was applied at two-leaf age stage only. On the other hand, grain weight and malt extract decreased with increased N application at booting stage. There were obvious differences between barley varieties and experimental years in the grain and malt quality response to the timing of N fertilizer application. It was found that grain protein concentration was significantly and positively correlated with beta-amylase activity, but significantly and negatively correlated with malt extract and Kolbach index. The effect of grain protein concentration on malt quality was predominant over the effect of grain beta-amylase activity.

The effect of sowing date on grain protein, hordein fraction content and malting quality of two-rowed spring barley was investigated by using ten commercial cultivars with different grain protein content and the relationships among these traits were examined. The results showed that grain protein content and B hordein content increased as the sowing date postponed and were significantly affected by sowing date, while C and D hordein contents were less influenced by sowing date. There were significant differences in grain protein and hordein fraction content among the ten cultivars. The coefficient of variation of D hordein content was much larger than that of B and C hordein contents, suggesting its greater variation caused by different sowing dates. Beta-amylase activity and diastatic power were also significantly affected by sowing date, with malt extract being less affected. Significant differences in measured malt quality were found among the ten cultivars. Grain protein was significantly correlated with B hordein and malt extract positively and negatively, respectively. There was no significant correlation between beta-amylase activity or diastatic power and grain protein content. B hordein was negatively and significantly correlated with malt extract, but no significant correlations between C hordein, D hordein and malting quality traits.

The cultivar and environmental variations of β-glucan content and β-glucanase activity in grains and malt were investigated in 8 barley cultivars grown at 7 locations. On average, for all cultivars and locations, approximately 80% of β-glucan present in grains was degraded after malting, but there was great variation among both cultivars and locations. β-glucanase activity was much lower but detectable in grains, and it dramatically increased after malting. The cultivar and environmental variations of β-glucan content were much higher in malt than in grains, and malt β-glucan content was more dependent on malt β-glucanase activity than the original level of β-glucan in grains. The correlation analysis of β-glucan content, β-glucanase activity and four malt quality parameters (Kolbach index, diastatic power, viscosity and malt extract) showed that malt-glucan content was highly significantly correlated with all quality parameters, while the association between grain β-glucan content and these quality parameters was relatively weak. Malt β-glucan content was negatively and highly significantly correlated with malt β-glucanase activity, and positively and significantly correlated with grain β-glucan content. It was also found that there was a positive and significant correlation between grain and malt β-glucanase activity.

A hydroponic experiment was carried out to study genotypic differences in effect of Al and Cd on growth and antioxidant enzyme activities by using 2 two-row winter barley genotypes (Hordeum vulgare L.) with different Al resistance, the relatively resistant Gebeina and the sensitive Shang 70–119. The seedling growth, presented as shoot height, root length and dry weight of root and shoot, and tillers per plant were inhibited by all stress treatments, including low pH, 100 µM Al (pH 4.0) and 1.0 µM Cd+100 µM Al (pH 4.0), while 1.0 µM Cd showed a slight stimulation of growth. The inhibition was more severe in 1.0 µ MC d+100 µM Al (pH 4.0) than in 100 µ MA l (pH 4.0), indicating that the effect of Cd and Al is synergistic. Al-sensitive genotype Shang 70–119 was more inhibited than Al-resistant genotype Gebeina. Proline concentration in leaves was significantly increased when plants were exposed to all stress treatments, being more pronounced in Shang 70–119 than in Gebeina. A highly significant increase in malonaldehyde (MDA) concentration, and a stimulation of superoxide dismutase (SOD) and peroxidase (POD) activities were recorded in the plants subjected to low pH, 100 µM Al (pH 4.0) and 1.0 µ MC d +100 µM Al(pH 4.0) treatments, and the extent of the increase varied greatly depending on concentration and time of exposure. Shang 70–119 had a higher MDA concentration, and less increase in SOD activity when first exposed than Gebeina had. Abbreviations: ROS – reactive oxygen species; CAT – catalase; MDA – malondialdehyde; POD – peroxidase; SOD – superoxide dismutase.

The cultivar and environmental variation of beta -amylase activity was studied using two barley cultivars with contrasting growth properties. There was a significant difference in beta -amylase activity between the two cultivars used, 92-11 being significantly higher than Xiumai 3. A significant variation in beta -amylase activity was detected between grains at different positions within a spike. The two cultivars showed the same pattern, with top grains showing the highest and bottom ones the lowest activities. The relative difference within a spike varied between the cultivars, with 92-11 being larger than Xiumai 3. Both seeding rate and timing of N application dramatically affected the beta -amylase activity. With N application at the booting stage, beta -amylase activity increased, mainly due to the significantly increased beta-amylase activity in the topmost grains. The bottom grains showed a lower response to timing of N application. The variation in protein content and grain weight between cultivars and among the various treatments was also examined. The possible influence of these factors on beta -amylase activity are discussed.

A low β-glucan and protein content is desirable for malting barley. In China high β-glucan content has been considered a major factor contributing to the inferior malting quality of local barleys. In this study 10 barley cultivars were planted in multi-location trials in the southern winter-barley zone to determine genotypic and environmental effects on β-glucan and protein content. There were highly significant differences in both β-glucan and protein content between the 10 barleys, the eight locations and the 2 planting years. The average β-glucan content over the 2 years for the 10 cultivars in the eight locations ranged from 3·91% for Gangpi 1 to 4·95% for Xiumei 3, and from 3·76% for Hangzhou to 4·75% for Taian in eight locations. Correspondingly, the protein contents of the 10 cultivars ranged from 11·37% for Yanyin 1 to 12·52% for ZAU, and of the eight locations from 9·5% for Hangzhou to 14·69% for Taian. Environmental factors contributed the largest component of the variation in both β-glucan and protein content. Five climatic factors, namely the total accumulated temperature, accumulated temperature to 25 °C and to 30 °C, precipitation and days with rain during seed development were included in a regression equation relating climatic factors and β-glucan content. In the regression equation relating climatic factors and protein content, two other factors, days from heading to maturity and accumulated temperature to 20 °C were included, in addition to the five climatic factors that significantly affected β-glucan content.

β-Amylase activities of barley cultivars collected from various areas of China, and as well as from Canada and Australia, were assayed. Meanwhile a multi-location trial was conducted to determine variation of β-amylase activity in eight barley cultivars and the relationship between β-amylase activity and protein content. For 56 cultivars in study, β-amylase activity ranged from 458 to 1024 U/g, with a mean of 738 U/g. There was significant variation in both β-amylase activity and protein content for eight barley cultivars grown in four locations. No significant correlation was found betweenβ-amylase activity and protein content surveyed in 56 cultivars.

Les variations de la teneur en β-glucane, un composant des parois cellulaires de l'endosperme des cereales, sont controlees genetiquement et environnementalement, au cours du developpement. Dans cet article, les variations sont etudiees en fonction du nombre d'epis et de la position dans l'epi.

Identification and characterization of novel genes involved in derangement of metabolisms of glucose and triglycerides are important in understanding the development of metabolic syndrome (MS) and atherosclerosis. Model rats with certain phenotypes of MS were fed a high-carbohydrate diet. The rat hepatic subtracted cDNA libraries were constructed and screened. A novel cDNA of full length was identified by screening of a human hepatic cDNA library with a mixture of probes of the differentially expressed fragments from the rat hepatic subtracted cDNA libraries. The corresponding gene of the cDNA was temporarily named metabolic syndrome-associated gene (MSAG). The predicted protein encoded by MSAG contains 110 amino acids and has a theoretical molecular weight of 11667.04 and an isoelectric point of 4.91. Compared with the housekeeping gene of beta-actin, MSAG had low transcription activity. However, the mRNA level of MSAG in HepG2 cells, a human hepatoma cell line, was significantly increased by glucose and decreased by insulin concentrations higher than physiological levels. These results suggest that MSAG may be involved in the metabolism and/or its regulation of glucose, the functioning of insulin under non-physiological conditions, and further in the development of metabolic syndrome.

Current advances in reverse vaccinology based on the principle of "sequence-structure-function" and such integrated platform technologies as immunoinformatics, computer-aid design, and various high-throughput omics (including genomics, transcriptomics and proteomics) may pave a new way for the discovery of candidate vaccine molecules against schistosomiasis. Both theoretical prediction and experimental approaches conventionally used in the field of reverse vaccinology are briefly introduced in this review; and the applications of these approaches to screening and confirming candidate Schistosoma vaccine molecules are also summarized. Furthermore, potential research prospects of the application of reverse vaccinology to Schistosoma vaccine development are discussed by simulating immune effect mechanisms of immunization with radiation-attenuated cercaria vaccine in animal hosts and naturally acquired immunity in human population.