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The dynamical localization phenomena in two-electron quantum-dot shuttles driven by an ac field have been investigated and analyzed by the Floquet theory. The dynamical localization occurs near the anti-crossings in Floquet eigenenergy spectrum. The oscillation of the quantum-dot shuttles may increase the possibility of the dynamical localization. Especially, even if the two electrons are initialized in two neighbor dots, they can be localized there for appropriate intensity of the driven field. The studies may help the understanding of dynamical localization in electron shuttles and expand the application potential of nanoelectromechanical devices.

The topological insulator has attracted increasing attention as a new state of quantum matter featured by the symmetry-protected edge states. Although the qualitative robustness of the edge states against local perturbations has been well established, it is not clear how these topological edge states respond quantitatively to a global perturbation. Here, we study the response of topological edge states in a HgTe quantum dot to an external in-plane electric field—a paradigmatic global perturbation in solid-state environments. We find that the stability of the topological edge state could be larger than that of the ground bulk state by several orders of magnitudes. This robustness may be verified by standard transport measurements in the Coulomb blockage regime. Our work may pave the way towards utilizing these topological edge states as stable memory devices for charge and/or spin information and stable emitter of single terahertz photons or entangled terahertz photon pairs for quantum communication.