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Many children with attention deficit hyperactivity disorder (ADHD) perform poorly in their academic studies. They also have difficulties in their social lives due to a lack of interpersonal skills and this often continues into adult life. Appropriate early therapies and medications can be very beneficial. In this paper, we introduce and demonstrate the benefits of a new type of treatment, namely, an eye-contact game which successfully exploits mixed reality technology. None of the patients in our experiment were older than ten years of age. They were able to pay attention and sustain interest in the treatment sessions over a span of six weeks. After participating in the treatment sessions with our game, the omission/commission errors which were evaluated in an attention test taken by the experimental group decreased significantly and appeared within the normal range. In addition to the improvement in error rates, the mean response time to an interactive metronome test significantly decreased. Importantly, our game allows patients to conduct this treatment by themselves at home without professional assistance. To the best of our knowledge, this study is one of the first studies to use a mixed reality head-mounted display to treat children with attention deficit hyperactivity disorder and to prove its potential as a treatment for clinically diagnosed children.

Objectives: To investigate the effect of psychomotricity programs and soccer programs on withdrawn behavior of students with intellectual disabilities in an integrated environment. Methods: Subjects were divided into two groups, the psychomotricity group and the soccer group, each consisting of 12 children. Programs were conducted twice a week for 12 weeks from Mar. 30 to Jun. 30, 2015, and tests on the children’s withdrawn behavior were conducted before and after the programs. Both programs were carried out in the integrated environment. SPSS 18.0 program was used to analyze the data *p

In this study we synthesized the 2-ethynylfluorenone-containing deoxyuridine derivative U FO and incorporated it at the central positions of oligodeoxynucleotides (ODNs) in an attempt to develop a new type of quencher-free linear beacon probe and to understand the effect of functionalization of the fluorene scaffold on the photophysical properties of the fluorescent ODNs. Herein, we describe our photophysical studies of U FO DNA probes and their application to single-nucleotide polymorphism typing.

Sapphire (Al2O3) wafers are used as an important substrate for the production of blue Light Emitting Diodes (LED) and the LED’s performance largely depends on the quality of the sapphire single crystals. There are several crystal growth methods for sapphire crystals and the Kyropoulos method is an efficient way to grow large diameter and high-quality sapphire single crystals with low dislocation density. During Kyropoulos growth, crystal growth begins from the seed at the top by slowly decreasing the temperature of heater, and the quality of the single crystals is largely influenced by the convection of the molten sapphire. The convection of molten sapphire is mainly influenced by the Hot-zone geometry such as crucible shape, heater arrangements and temperature distribution. In this study, Computational Fluid Dynamics (CFD) simulations were performed in order to optimize the Hot-zone of a Kyropoulos grower for producing high quality sapphire single crystals.

Color laser printers are nowadays abused to print or forge official documents and bills. Identifying color laser printers will be a step for media forensics. This paper presents a new method to identify color laser printers with printed color images. First, 39 noise features of color printed images are extracted from the statistical analysis of the HH sub-band on discrete wavelet transform. Then, these features are applied to train and classify the support vector machine for identifying the color laser printer. In the experiment, 9 models of 4 brands, Xerox, Konica, HP, Canon, are tested to classify the brand of color laser printer, the color toner, and the model of color laser printer. The results prove that the presented identification method performs well using the noise features of color printed images.

We have investigated the factors having influence on the lithographic fidelity variation in 193nm masks. Significant researches have been studied that haze contamination, resulting from the absorption of chemical residual ions and mask container out-gassing in mask fabrication, is one of the major component to reduce the optimized lithography condition such as Best Focus, Depth of Focus and Exposure latitude of individual feature. And also environment being containing humidity, ambient AMC (airborne molecular contamination) react with high exposure energy to form crystal growth of ionic molecular complex such as ammonium sulfate causing abnormal printability. Moreover, optical issue of organic pellicle membrane is thoroughly considered that perfluoro polymer degradation induced by high photon energy affect the transmittance intensity. Consequently, these photophysical alterations bring about the lithographic variation and cause considerable defects in wafer printing. In this paper, we tried to verify the influence grade inducing the lithographic variation among the latent contamination factors consisting of mask back-side quartz contamination, the growth of exposure energy based haze phenomena, thin organic pellicle membrane degradation and modified character of MoSiN surface. Metrological inspection and photochemical reaction evaluations were conducted with several equipments including AIMS, Scatterometer, XPS, SIMS, FT-IR, UV, ArF acceleration laser to demonstrate the proposal mechanism of correlation between lithographic variation and latent contamination factors. The optical issues and lifetime of ArF PSM were simulated with the evaluation of effects of pellicle degradation and surface modification.

As the specification for photomask becomes tighter, it is strongly demanded for achieving precise CD MTT (critical dimension mean to target) and enhanced defect controllability in photomask fabrication. First of all, it is necessary that reducing the factors of CD MTT error and introducing the reliable method to correct CD error for accurate CD requirement of attenuated PSM (phase shift mask). From this point of view, one of CD correction methods which consist of Cr CD measurement step after resist strip (strip inspection CD: SI CD) and additional corrective Cr dry etch step was developed. Previous SI CD correction process resulted in accurate CD control within the range of CD MTT. However it was not appropriate for defect control due to additional resist processes for selective protection of Cr pattern during CD correction process. In this study, the method for achieving precise CD MTT by correcting CD error without any resist process is investigated. It is not suitable for the CD correction process to control CD MTT precisely that Cr etched resist (etch inspection CD: EI CD) is very vulnerable to E-beam scanning during CD measurement. Otherwise, photoresist after Cr etch selectively shrinks via UV irradiation under ozone (O3) condition, which drives a reduction of CD MTT error as a result of accurate CD measurement (UV-irradiation inspection CD: UI CD). Moreover, it is not necessary any resist process for Cr protection due to UV irradiated resist as enough for a etch barrier. It is a strong advantage of novel CD correction method. This strategy solves the problems such as both CD measurement error on the EI CD correction method and defects originated from resist process on the SI CD correction method at once. For the successful incorporation of UI CD correction method, several items related with CD should be evaluated: accuracy and repeatability of CD measurement under UI CD, control of CD MTT and CD uniformity, additional corrective etch bias for UI CD, independence of corrective Cr etch process from UV irradiated resist, isolated-dense CD difference,.. etc. In this paper, strategy of design for the progressive CD correction method for defect-free photomask and process details will be discussed.

We designed an A-selective fluorescent DNA probe, UFL, which bears a 2-ethynylfluorene moiety covalently attached to the base dU, and incorporated it into a central position in the hairpin loop. We describe photophysical studies of triad base pairs containing an UFL DNA probe and their application to single-nucleotide polymorphism (SNP) typing using novel quencher-free molecular beacons (MBs). The drastic changes in the fluorescence properties that arise upon changing the nature of the complementary base and FBs suggest that these triad base pairs are the key elements for quencher-free SNP typing.

The ability to eliminate the critical source of haze contamination which can be derived from the cleaning chemistry residues and mass production environment has become a major challenge for 193 nm photolithography in semiconductor industry. Furthermore, as the specification for pattern generation on photomask becomes tighter, it is getting harder and harder to eliminate defects with both minimal structural damage and preservation of photophysical properties. We designed for the smart cleaning strategy to achieve the defect-free photomasks as a concern of above current issue with a combination of well-known cleaning technology, such as using the collective effects of ozonated water (DIO3) for the alternative to conventional clean (SPM/SC1) and UV/O3 treatment for the control of sulfate concentration. In addition to photomask clean, these strategies are also used for photoresist stripping. As well as the final cleaning process, it is a rational strategy that judicious modification of inter-process clean. Specially, that kind of view is focused on the after-development clean (ADC) process which mainly eliminated the source of fatal defects on the mask, such as pattern bridge following dry etch process. In this paper we will propose a novel cleaning strategy for the elimination of potential source of haze formation and fatal defects.

[reaction: see text] Fluorescence can be quenched through PET from the fluorophore to neighboring C, T, and G bases, but not to the A moiety. The hairpin stem stability arising from pi-stacking and the PET between the pyrene-labeled 2'-deoxynucleotide units and their neighboring bases are the two main factors that affect the operation of these novel fluorescent oligonucleotides.