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The integration of ferroelectrics with semiconductors is crucial for developing functional devices, such as field-effect transistors, tunnel junctions, and nonvolatile memories. However, the synthesis of high-quality single-crystalline ferroelectric nitride perovskites has been limited, hindering a comprehensive understanding of their switching dynamics and potential applications. Here we report the synthesis and characterizations of epitaxial single-phase ferroelectric cerium tantalum nitride (CeTaN3) on both oxides and semiconductors. The polar symmetry of CeTaN3 was confirmed by observing the atomic displacement of central ions relative to the center of the TaN6 octahedra, as well as through optical second harmonic generation. We observed switchable ferroelectric domains in CeTaN3 films using piezo-response force microscopy, complemented by the characterization of square-like polarization-electric field hysteresis loops. The remanent polarization of CeTaN3 reaches approximately 20 uC/cm2 at room temperature, consistent with theoretical calculations. This work establishes a vital link between ferroelectric nitride perovskites and their practical applications, paving the way for next-generation information and energy-storage devices with enhanced performance, scalability, and manufacturability., Comment: 47 pages, 4 figures

Non-orthogonal eigenstates are a fundamental feature of non-Hermitian systems and are accompanied by the emergence of nontrivial features. However, the platforms to explore non-Hermitian mode couplings mainly measure near-field effects, and the far-field behaviour remain mostly unexplored. Here, we study how a microcavity with non-Hermitian mode coupling exhibits eigenstate non-orthogonality by investigating the spatial field and the far-field polarization of cavity modes. The non-Hermiticity arises from asymmetric backscattering, which is controlled by integrating two scatterers of different size and location into a microdisk. We observe that the spatial field overlaps of two modes increases abruptly to its maximum value, whilst different far-field elliptical polarizations of two modes coalesce when approaching an exceptional point. We demonstrate such features experimentally by measuring the far-field polarization from the fabricated microdisks. Our work reveals the non-orthogonality in the far-field degree of freedom, and the integrability of the microdisks paves a way to integrate more non-Hermitian optical properties into nanophotonic systems., Comment: 11pages, 4 figures

We report the slow-light enhanced spin-resolved in-plane emission from a single quantum dot (QD) in a photonic crystal waveguide (PCW). The slow light dispersions in PCWs are designed to match the emission wavelengths of single QDs. The resonance between two spin states emitted from a single QD and a slow light mode of a waveguide is investigated under a magnetic field with Faraday configuration. Two spin states of a single QD experience different degrees of enhancement as their emission wavelengths are shifted by combining diamagnetic and Zeeman effects with an optical excitation power control. A circular polarization degree up to 0.81 is achieved by changing the off-resonant excitation power. Strongly polarized photon emission enhanced by a slow light mode shows great potential to attain controllable spin-resolved photon sources for integrated optical quantum networks on chip., Comment: 7 pages,5 figures

Transition metal nitrides (TMNs) exhibit fascinating physical properties that hold great potential in future device applications. To stack two-dimensional TMNs with other functional materials that have dissimilar orientations and symmetries requires to separate epitaxial TMNs from the growth substrates. However, the lattice constants of TMNs are not compatible with those of most sacrificial layers, leading to a great challenge to fabricate high-quality single crystalline TMN membranes. In this letter, we report the application of a water-soluble BaO sacrificial layer as a general approach to create freestanding TMN membranes. Taken CrN as an example, the relatively small lattice mismatch and identical cubic structure between BaO and CrN ensure the growth of heterostructures. Millimeter-size CrN membrane allows us to directly observe the planar-view of atomic structure and to correlate its electronic state with intrinsic transport properties. Our work provides the opportunity to fabricate freestanding TMN membranes and the ability to transfer them to arbitrary substrates. The integration of TMN membranes with other materials will stimulate further studies in the emergent phenomena at heterointerfaces., Comment: 16 pages; 3 figures

Single charge control of localized excitons (LXs) in two-dimensional transition metal dichalcogenides (TMDCs) is crucial for potential applications in quantum information processing and storage. However, traditional electrostatic doping method with applying metallic gates onto TMDCs may cause the inhomogeneous charge distribution, optical quench, and energy loss. Here, by locally controlling the ferroelectric polarization of the ferroelectric thin film BiFeO3 (BFO) with a scanning probe, we can deterministically manipulate the doping type of monolayer WSe2 to achieve the p-type and n-type doping. This nonvolatile approach can maintain the doping type and hold the localized excitonic charges for a long time without applied voltage. Our work demonstrated that ferroelectric polarization of BFO can control the charges of LXs effectively. Neutral and charged LXs have been observed in different ferroelectric polarization regions, confirmed by magnetic optical measurement. Highly circular polarization degree about 90 % of the photon emission from these quantum emitters have been achieved in high magnetic fields. Controlling single charge of LXs in a non-volatile way shows a great potential for deterministic photon emission with desired charge states for photonic long-term memory., Comment: 13 pages, 5 figures

Emergent phenomena at heterointerfaces are directly associated with the bonding geometry of adjacent layers. Effective control of accessible parameters, such as the bond length and bonding angles, offers an elegant method to tailor competing energies of the electronic and magnetic ground states. In this study, we construct unit thick syntactic layers of cobaltites within a strongly tilted octahedral matrix via atomically precise synthesis. The octahedral tilt patterns of adjacent layers propagate into cobaltites, leading to a continuation of octahedral tilting while maintaining significant misfit tensile strain. These effects induce severe rumpling within an atomic plane of neighboring layers triggers the electronic reconstruction between the splitting orbitals. First-principles calculations reveal that the cobalt ions transits to a higher spin state level upon octahedral tilting, resulting in robust ferromagnetism in ultrathin cobaltites. This work demonstrates a design methodology for fine-tuning the lattice and spin degrees of freedom in correlated quantum heterostructures by exploiting epitaxial geometric engineering., Comment: 18 pages, 5 figures

Strong exciton-plasmon interaction between the layered two-dimensional (2D) semiconductors and gap plasmons shows a great potential to implement cavity quantum-electrodynamics in ambient condition. However, achieving a robust plasmon-exciton coupling with nanocavity is still very challenging, because the layer area is usually small with conventional approaches. Here, we report on a robust strong exciton-plasmon coupling between the gap mode of bowtie and the excitons in MoS$_2$ layers with gold-assisted mechanical exfoliation and the nondestructive wet transfer techniques for large-area layer. Benefiting from the ultrasmall mode volume and strong in-plane field, the estimated effective exciton number contributing to the coupling is largely reduced. With a corrected exciton transition dipole moment, the exciton numbers are extracted with 40 for the case of monolayer and 48 for 8 layers. Our work paves a way to realize the strong coupling with 2D materials with few excitons at room temperature., Comment: 21 pages, 5 figures

Using first-principles calculations, we investigated the magnetic, electronic, and structural properties of oxygen-substituted NaMnF3 (NaMnF1.5O1.5) with in-plane biaxial strain. For simplicity, a structure containing an oxygen octahedron is used to explore the underlying physical mechanism. We found that the oxygen octahedron induces a transition from an insulating antiferromagnet to a high-temperature half-metallic ferromagnet. More importantly, the Curie temperature can be significantly enhanced and even might reach room temperature by applying tensile strain. The changing trends of exchange coupling constants with the increasing biaxial tensile strain can be attributed to the cooperative effects of Jahn-Teller distortion and rotation distortion. It is expected that these findings can enrich the versatility of NaMnF3 and make it a promising candidate for spintronic applications., Comment: 24 pages 6 figures

A variety of novel phenomena and functionalities emerge from lowering the dimensionality of materials and enriching the degrees of freedom in modulation. In this work, it is found that the saturation magnetization of LaMnO3 (LMO) films is largely enhanced by 56% after releasing from a brand-new phase of tetragonal strontium aluminate buffer layer, and is significantly increased by 92% with bending films to a curvature of 1 mm-1 using a water-assisted direct-transferring method. Meanwhile, the Curie temperature of LMO films has been improved by 13 K. High-resolution spherical aberration-corrected scanning transmission electron microscopy and first-principles calculations unambiguously demonstrate that the enhanced ferromagnetism is attributed to the strengthened Mn-O-Mn super-exchange interactions from the augmented characteristics of the unconventional P21/n structure caused by the out-of-plane lattice shrinking after strain releasing and increased flexure degree of freestanding LMO films. This work paves a way to achieve large-scale and crack-and-wrinkle-free freestanding films of oxides with largely improved functionalities.

Monolayer transition metal dichalcogenides have attracted great attentions for potential applications in valleytronics. However, the valley polarization degree is usually not high because of the intervalley scattering. Here, we demonstrate a largely enhanced valley polarization up to 80\% in monolayer WS$_2$ under non-resonant excitation at 4.2 K using WS$_2$/LaMnO$_3$ thin film heterostructure, which is much higher than that for monolayer WS$_2$ on SiO$_2$/Si substrate with a valley polarization of 15\%. Furthermore, the greatly enhanced valley polarization can be maintained to a high temperature of about 160 K with a valley polarization of 53\%. The temperature dependence of valley polarization is strongly correlated with the thermomagnetic curve of LaMnO$_3$, indicating an exciton-magnon coupling between WS$_2$ and LaMnO$_3$. A simple model is introduced to illustrate the underlying mechanisms. The coupling of WS$_2$ and LaMnO$_3$ is further confirmed with an observation of two interlayer excitons with opposite valley polarizations in the heterostructure, resulting from the spin-orbit coupling induced splitting of the conduction bands in monolayer transition metal dichalcogenides. Our results provide a pathway to control the valleytronic properties of transition metal dichalcogenides by means of ferromagnetic van der Waals engineering, paving a way to practical valleytronic applications., Comment: 15 pages, 5 figures

Chiral quantum optics has attracted considerable interest in the field of quantum information science. Exploiting the spin-polarization properties of quantum emitters and engineering rational photonic nanostructures has made it possible to transform information from spin to path encoding. Here, compact chiral photonic circuits with deterministic circularly polarized chiral routing and beamsplitting are demonstrated using two laterally adjacent waveguides coupled with quantum dots. Chiral routing arises from the electromagnetic field chirality in waveguide, and beamsplitting is obtained via the evanescent field coupling. The spin- and position-dependent directional spontaneous emission are achieved by spatially selective micro-photoluminescence measurements, with a chiral contrast of up to 0.84 in the chiral photonic circuits. This makes a significant advancement for broadening the application scenarios of chiral quantum optics and developing scalable quantum photonic networks., Comment: 19 pages, 5 figures

We report on controllable cavity modes through controlling the backscattering by two identical scatterers. Periodic changes of the backscattering coupling between two degenerate cavity modes are observed with the angle between two scatterers and elucidated by a theoretical model using two-mode approximation and numerical simulations. The periodically appearing single-peak cavity modes indicate mode degeneracy at diabolical points. Then interactions between single quantum dots and cavity modes are investigated. Enhanced emission of a quantum dot with a six-fold intensity increase is obtained in a microdisk at a diabolical point. This method to control cavity modes allows large-scale integration, high reproducibility and fexible design of the size, location, quantity and shape for scatterers, which can be applied for integrated photonic structures with scatterer-modified light-matter interaction., Comment: 23 pages, 5 figures

A variety of emergent phenomena has been enabled by interface engineering in the complex oxides heterostructures. While extensive attention has been attracted to LaMnO3 (LMO) thin films for observing the control of functionalities at its interface with substrate, the nature of the magnetic phases in the thin film is, however,controversial. Here, it is reported that the ferromagnetism in 2 and 5 unit cells thick LMO films epitaxially deposited (001)-SrTiO3 substrates ferromagnetic/ferromagnetic coupling in 8 and 10-unit-cell ones, and a striking ferromagnetic/antiferromagnetic pinning effect with apparent positive exchange bias in 15 and 20-unit-cell ones are observed. This novel phenomenon in both 15 and 20-unit-cell films indicates a coexistence of three magnetic orderings in a single LMO film.The high-resolution scanning transmission electron microscopy suggests a P21/n to Pbnm symmetry transition from interface to surface, with the spatial stratification of MnO6 octahedral morphology, corresponding to different magnetic orderings. These results should shed some new lights on manipulating the functionality of oxides by interface engineering., Comment: 15 pages, 4 figures

Intense terahertz (THz) electromagnetic fields have been utilized to reveal a variety of extremely nonlinear optical effects in many materials through nonperturbative driving of elementary and collective excitations. However, such nonlinear photoresponses have not yet been discovered in light-emitting diodes (LEDs), letting alone employing them as fast, cost effective,compact, and room-temperature-operating THz detectors and cameras. Here we report ubiquitously available LEDs exhibited gigantic and fast photovoltaic signals with excellent signal-to-noise ratios when being illuminated by THz field strengths >50 kV/cm. We also successfully demonstrated THz-LED detectors and camera prototypes. These unorthodox THz detectors exhibited high responsivities (>1 kV/W) with response time shorter than those of pyroelectric detectors by four orders of magnitude. The detection mechanism was attributed to THz-field-induced nonlinear impact ionization and Schottky contact. These findings not only help deepen our understanding of strong THz field-matter interactions but also greatly contribute to the applications of strong-field THz diagnosis.

Topological photonics provides a new paradigm in studying cavity quantum electrodynamics with robustness to disorder. In this work, we demonstrate the coupling between single quantum dots and the second-order topological corner state. Based on the second-order topological corner state, a topological photonic crystal cavity is designed and fabricated into GaAs slabs with quantum dots embedded. The coexistence of corner state and edge state with high quality factor close to 2000 is observed. The enhancement of photoluminescence intensity and emission rate are both observed when the quantum dot is on resonance with the corner state. This result enables the application of topology into cavity quantum electrodynamics, offering an approach to topological devices for quantum information processing., Comment: 17 pages, 3 figures

The topological lasers, which are immune to imperfections and disorders, have been recently demonstrated based on many kinds of robust edge states, being mostly at microscale. The realization of 2D on-chip topological nanolasers, having the small footprint, low threshold and high energy efficiency, is still to be explored. Here, we report on the first experimental demonstration of the topological nanolaser with high performance in 2D photonic crystal slab. Based on the generalized 2D Su-Schrieffer-Heeger model, a topological nanocavity is formed with the help of the Wannier-type 0D corner state. Laser behaviors with low threshold about 1 $\mu W$ and high spontaneous emission coupling factor of 0.25 are observed with quantum dots as the active material. Such performance is much better than that of topological edge lasers and comparable to conventional photonic crystal nanolasers. Our experimental demonstration of the low-threshold topological nanolaser will be of great significance to the development of topological nanophotonic circuitry for manipulation of photons in classical and quantum regimes., Comment: 15 pages, 4 figures

In single microdisks, embedded active emitters intrinsically affect the cavity mode of microdisks, which results in a trivial symmetric backscattering and a low controllability. Here we propose a macroscopical control of the backscattering direction by optimizing the cavity size. The signature of positive and negative backscattering directions in each single microdisk is confirmed with two strongly coupled microdisks. Furthermore, the diabolical points are achieved at the resonance of two microdisks, which agrees well with the theoretical calculations considering backscattering directions. The diabolical points in active optical structures pave a way to implement quantum information processing with geometric phase in quantum photonic networks., Comment: 16 pages, 4 figures

Hybrid Perovskites have shown a great potential for applications in photovoltaics and light-emitting devices with high efficiency. Interaction between defect-induced trapped excitons and phonons plays an important role in understanding the emerging phenomena for such an excellent figure-of-merit. Here we demonstrate hot polarons with narrow linewidth in $\mathrm{CH_{3}NH_{3}PbBr_{3}}$ nanowires, which originate from the interaction between trapped excitons and octahedra-twist phonons. The observation of hot polarons in photoluminescence without gain methods indicates the large interaction strength between excitons and phonons. The multiple hot polarons are further confirmed by magneto-optical spectra with a Zeeman splitting of the trapped excitons and a phonon energy increase with diamagnetic effect. Furthermore, the phonons participating in the interaction are demonstrated to be the octahedra-twist vibrations which are transverse optical phonons, while the interaction between trapped excitons and longitudinal optical phonons is weak. Our work demonstrates that trapped excitons in perovskites prefer to interact with transverse rather than longitudinal optical phonons. Since bulk materials usually interact with longitudinal optical phonons, this result provides a physical explanation of the high tolerance of defects in perovskites., Comment: 16 pages, 4 figures

Ferroelectricity-the switchable intrinsic electric polarization-has not yet been attained in a metal experimentally and is in fact generally deemed irreconcilable with free carriers, although polar metal has been achieved recently. Multiferroic metal has never even been proposed though multiferroics have been widely investigated. Here we report a room-temperature coexistence of multiferroicity and metallic behavior in PbNb0.12Ti0.88O3-delta films. The oxygen-vacancy-induced electrons become delocalized and ameliorate the ferromagnetic properties of these films, whereas they fail to vanish the polar displacements nor the individual dipole in each unit cell. This concurrent appearance of multiferroicity and metallicity is also confirmed by our first-principles calculation performed on 12.5% Nb-doped PbTiO3 with oxygen vacancies. These findings break a path to multiferroic metallic materials and offer a potential application for multiferroic spintronic devices.

Polar metals with ferroelectric-like displacements in metals have been achieved recently, half century later than Anderson and Blount's prediction. However, the genuine ferroelectricity with electrical dipolar switching has not yet been attained experimentally in the conducting materials, especially the ones possessing magnetic responses. Here we report the coexistence of ferroelectricity and magnetoresistance (MR) in the metallic PbNb0.12Ti0.88O3 (PNTO) thin films. We found that the conducting and magnetic responses of PNTO films are highly asymmetric. Negative MR up to 50% is observed under an in-plane magnetic field; the MR switches to positive with the magnetic field applied parallel to the surface normal. Such unique behavior is attributed to the moving electron caused effective magnetic field which couples with the spins of electrons, which form a dynamic multiferroic state in the metallic PNTO. These findings break a path to multiferroic metal and offer a great potential to the multi-functional devices., Comment: 21 pages, 3 figures

Large coupling strengths in exciton-photon interactions are important for quantum photonic network, while strong cavity-quantum-dot interactions have been focused on s-shell excitons with small coupling strengths. Here we demonstrate strong interactions between cavities and p-shell excitons with a great enhancement by the \textit{in situ} wave-function control. The p-shell excitons are demonstrated with much larger wave-function extents and nonlocal interactions beyond the dipole approximation. Then the interaction is tuned from the nonlocal to local regime by the wave-function shrinking, during which the enhancement is obtained. A large coupling strength of $210\ \mu\mathrm{eV}$ has been achieved, indicating the great potential of p-shell excitons for coherent information exchange. Furthermore, we propose a distributed delay model to quantitatively explain the coupling strength variation, revealing the intertwining of excitons and photons beyond the dipole approximation., Comment: 12 pages, 5 figures

Two-photon Rabi splitting in a cavity-dot system provides a basis for multi-qubit coherent control in quantum photonic network. Here we report on two-photon Rabi splitting in a strongly coupled cavity-dot system. The quantum dot was grown intentionally large in size for large oscillation strength and small biexciton binding energy. Both exciton and biexciton transitions couple to a high quality factor photonic crystal cavity with large coupling strengths over 130 $\mu$eV. Furthermore, the small binding energy enables the cavity to simultaneously couple with two exciton states. Thereby two-photon Rabi splitting between biexciton and cavity is achieved, which can be well reproduced by theoretical calculations with quantum master equations., Comment: 12 pages, 4 figures

Despite of the tremendous efforts spent on the oxygen vacancy migration in determining the property optimization of oxygen-vacancy enrichment transition metal oxides, few has focused on their dynamic behaviors non-equilibrium states. In this work, we performed multi-timescale ultrafast X-ray diffraction measurements by using picosecond synchrotron X-ray pulses and femtosecond table-top X-ray pulses to monitor the structural dynamics in the oxygen-vacancy ordered SrCoO2.5 thin films. A giant photoinduced strain ({\Delta}c/c > 1%) was observed, whose distinct correlation with the pump photon energy indicates a non-thermal origin of the photoinduced strain. The sub-picosecond resolution X-ray diffraction reveals the formation and propagation of the coherent acoustic phonons inside the film. We also simulate the effect of photoexcited electron-hole pairs and the resulting lattice changes using the Density Function Theory method to obtain further insight on the microscopic mechanism of the measured photostriction effect. Comparable photostrictive responses and the strong dependence on excitation wavelength are predicted, revealing a bonding to anti-bonding charge transfer or high spin to intermediate spin crossover induced lattice expansion in the oxygen-vacancy films., Comment: 12 pages, 4 figures, support material

Controlling functionalities, such as magnetism or ferroelectricity, by means of oxygen vacancies (VO) is a key issue for the future development of transition metal oxides. Progress in this field is currently addressed through VO variations and their impact on mainly one order parameter. Here we reveal a new mechanism for tuning both magnetism and ferroelectricity simultaneously by using VO. Combined experimental and density-functional theory studies of Eu0.5Ba0.5TiO3-{\delta}, we demonstrate that oxygen vacancies create Ti3+ 3d1 defect states, mediating the ferromagnetic coupling between the localized Eu 4f7 spins, and increase an off-center displacement of Ti ions, enhancing the ferroelectric Curie temperature. The dual function of Ti sites also promises a magnetoelectric coupling in the Eu0.5Ba0.5TiO3-{\delta}., Comment: Accepted by Physical Review B, 2017

Migration of oxygen vacancies has been proposed to play an important role in the bipolar memristive behaviors since oxygen vacancies can directly determine the local conductivity in many systems. However, a recent theoretical work demonstrated that both migration of oxygen vacancies and coexistence of cation and anion vacancies are crucial to the occurrence of bipolar memristive switching, normally observed in the small-sized NiO. So far, experimental work addressing this issue is still lacking. In this work, with conductive atomic force microscope and combined scanning transmission electron microscopy & electron energy loss spectroscopy, we reveal that concentration surplus of Ni vacancy over O vacancy determines the bipolar memristive switching of NiO films. Our work supports the dual-defects-based model, which is of fundamental importance for understanding the memristor mechanisms beyond the well-established oxygen-vacancy-based model. Moreover, this work provides a methodology to investigate the effect of dual defects on memristive behaviors., Comment: ACS Applied Materials & Interfaces 2016

We report on a temporal evolution of photoluminescence (PL) spectroscopy of CuInS$_{2}$/ZnS colloidal quantum dots (QDs) by drop-casting on SiO$_{2}$/Si substrates and high quality factor microdisks (MDs) under different atmospheric conditions. Fast PL decay, peak blueshift and linewidth broadening due to photooxidation have been observed at low excitation power. With further increasing of the excitation power, the PL peak position shows a redshift and linewidth becomes narrow, which is ascribed to the enhanced F$\ddot{o}$rster resonant energy transfer between different QDs by photoinduced agglomeration. The oxygen plays an important role in optically induced PL decay which is verified by reduced photobleaching effect in vacuum. When the QDs drop-casted on MDs, photooxidation and photobleaching are accelerated because the excitation efficiency is greatly enhanced with coupling the pumping laser with the cavity modes. However, when the emitted photons couple with cavity modes, a PL enhancement by more than 20 times is achieved because of the increased extraction efficiency and Purcell effects of MDs at room temperature (RT), and 35 times at 20 K. The photobleaching can be avoided with a small excitation power but with a strong PL intensity by taking advantages of high quality factor cavities. The high efficient PL emission without photodegradation is very promising for using CuInS$_{2}$ QDs as high efficient photon emitters at RT, where the photodegradation has always been limiting the practical applications of colloidal quantum dots., Comment: 23 pages, 8 figures in ACS Photonics, 2017

Systems with coupled cavities and waveguides have been demonstrated as optical switches and optical sensors. To optimize the functionalities of these optical devices, Fano resonance with asymmetric and steep spectral line shape has been used. We theoretically propose a coupled photonic crystal cavity-waveguide structure to achieve Fano resonance by placing partially reflecting elements in waveguide. To enhance Fano resonance, optical gain material is introduced into the cavity. As the gain increases, the transmission line shape becomes steepened and the transmissivity can be six times enhanced, giving a large contrast by a small frequency shift. It is prospected that the gain enhanced Fano resonance is very useful for optical switches and optical sensors., Comment: 16 pages, 5 figures

Surface plasmon polaritons enable light concentration within subwavelength regions, opening thereby new avenues for miniaturizing the device and strengthening light-matter interactions. Here we realize effective electro-optic modulation in low-loss plasmonic waveguides with the aid of graphene, and the devices are fully integrated in the silicon-on-insulator platform. By advantageously exploiting low-loss plasmonic slot-waveguide modes, which weakly leak into a substrate while feature strong fields within the two-layer-graphene covered slots in metal, we successfully achieve a tunability of 0.13 dB/um for our fabricated graphene-plasmonic waveguide devices with extremely low insertion loss, which outperforms previously reported graphene-plasmonic devices. Our results highlight the potential of graphene plasmonic leaky-mode hybrid waveguides to realized active ultra-compact devices for optoelectronic applications., Comment: revised version with 12 pages and 4 figures

We report the direct observation of coupling between a single self-assembled InAs quantum dot and a wetting layer, based on strong diamagnetic shifts of many-body exciton states using magneto-photoluminescence spectroscopy. An extremely large positive diamagnetic coefficient is observed when an electron in the wetting layer combines with a hole in the quantum dot; the coefficient is nearly one order of magnitude larger than that of the exciton states confined in the quantum dots. Recombination of electrons with holes in a quantum dot of the coupled system leads to an unusual negative diamagnetic effect, which is five times stronger than that in a pure quantum dot system. This effect can be attributed to the expansion of the wavefunction of remaining electrons in the wetting layer or the spread of electrons in the excited states of the quantum dot to the wetting layer after recombination. In this case, the wavefunction extent of the final states in the quantum dot plane is much larger than that of the initial states because of the absence of holes in the quantum dot to attract electrons. The properties of emitted photons that depend on the large electron wavefunction extents in the wetting layer indicate that the coupling occurs between systems of different dimensionality, which is also verified from the results obtained by applying a magnetic field in different configurations. This study paves a new way to observe hybrid states with zero- and two-dimensional structures, which could be useful for investigating the Kondo physics and implementing spin-based solid-state quantum information processing., Comment: 20 pages, 7 figures in Nano Research, 2015

Controlling single-particle wave functions in single semiconductor quantum dots is in demand to implement solid-state quantum information processing and spintronics. Normally, particle wave functions can be tuned transversely by an perpendicular magnetic field. We report a longitudinal wave function control in single quantum dots with a magnetic field. For a pure InAs quantum dot with a shape of pyramid or truncated pyramid, the hole wave function always occupies the base because of the less confinement at base, which induces a permanent dipole oriented from base to apex. With applying magnetic field along the base-apex direction, the hole wave function shrinks in the base plane. Because of the linear changing of the confinement for hole wave function from base to apex, the center of effective mass moves up during shrinking process. Due to the uniform confine potential for electrons, the center of effective mass of electrons does not move much, which results in a permanent dipole moment change and an inverted electron-hole alignment along the magnetic field direction. Manipulating the wave function longitudinally not only provides an alternative way to control the charge distribution with magnetic field but also a new method to tune electron-hole interaction in single quantum dots., Comment: 19 pages,3 figures

The expression of the thermal fluctuation parameter in the stochastic Landau-Lifshitz-Gilbert equation has been derived from a fundamental quantum theory of spins and phonons, in which the exchange interaction between nearest atoms has been included. Our studies show that the thermal fluctuation decreases exponentially with increasing exchange interaction. The non-uniform fluctuation of local spins make the spin susceptibility much different from the result derived by the macro-spin model or single spin model. The related spin susceptibility depends not only on the strength of exchange interaction, but also on the lattice structure. The non-uniform fluctuation can lead to an extra broadening of the resonance line width along with the broadening arisen from the Gilbert damping., Comment: This paper has been withdrawn for verifying some details

Heat has always been a killing matter for traditional semiconductor machines. The underlining physical reason is that the intrinsic carrier density of a device made from a traditional semiconductor material increases very fast with a rising temperature. Once reaching a temperature, the density surpasses the chemical doping or gating effect, any p-n junction or transistor made from the semiconductor will fail to function. Here, we measure the intrinsic Fermi level (|E_F|=2.93k_B*T) or intrinsic carrier density (n_in=3.87*10^6 cm^-2 K^-2*T^2), carrier drift velocity, and G mode phonon energy of graphene devices and their temperature dependencies up to 2400 K. Our results show intrinsic carrier density of graphene is an order of magnitude less sensitive to temperature than those of Si or Ge, and reveal the great potentials of graphene as a material for high temperature devices. We also observe a linear decline of saturation drift velocity with increasing temperature, and identify the temperature coefficients of the intrinsic G mode phonon energy. Above knowledge is vital in understanding the physical phenomena of graphene under high power or high temperature.