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Inspired by the human brain's capacity as a powerful biological computer capable of simultaneously processing a vast array of cognitive tasks, many emerging artificial synapse devices have been developed in recent years. Electric-double-layer (EDL) transistors based on interfacial ion-modulation have attracted widespread attention for simulating synaptic plasticity and neural functions. Here, low-voltage EDL p-type thin-film transistors (TFTs) are fabricated on glass substrates, with Ni-doped cuprous iodide (Ni0.06Cu0.94I) as the channel and chitosan as the dielectric. The electrical performance of the Ni0.06Cu0.94I TFTs is investigated: current on/off ratio of 6.4 × 104, subthreshold swing of 33 mV/dec, threshold voltage of 1.38 V, operating voltage of 2 V, and saturation field-effect mobility of 15.75 cm2 V−1 s−1. A dual in-plane gate OR logic operation is demonstrated. Importantly, by applying single voltage pulses, dual voltage pulses, and multiple voltage pulses to the gate, the Ni0.06Cu0.94I transistors exhibited typical synaptic characteristics, including short-term potentiation, short-term depression, long-term potentiation, long-term depression, paired-pulse facilitation, and spiking-rate-dependent plasticity. Furthermore, the synaptic transistor can also simulate the learning–forgetting–relearning process of the human brain. These remarkable behaviors of voltage-stimulated synaptic transistors have potential for neuromorphic applications in future artificial systems. [ABSTRACT FROM AUTHOR]

In this article, SnxCu1−xI thin-film transistors were fabricated on a glass substrate, with CuI doped with varying concentrations of SnI2 serving as the channel and chitosan as the dielectric. When x = 0.06, the device exhibited optimal performance: a current on/off ratio of 2.56 × 105, a subthreshold slope of 31.67 mV/dec, a threshold voltage of 1.33 V, and a saturated field-effect mobility of 21.75 cm2 V−1 s−1. Due to the electric double layer effect of chitosan, the operating voltage of the devices was reduced to below 2 V. Simulations were also conducted on the behavior and functionality of artificial synapses, such as short-term plasticity, long-term plasticity, and paired-pulse facilitation. Building upon the functionalities of artificial synapses, the Sn0.06Cu0.94I neuromorphic transistors simulated the fundamental pain perception function of biological nociceptors. Finally, the effects of bias stress and laser irradiation on the devices were investigated, indicating the excellent stability of the Sn0.06Cu0.94I neuromorphic transistors. Fabricated via the solution process, this low-voltage neuromorphic transistors hold significant implications for applications in bionic sensing systems and neuromorphic chip technology. [ABSTRACT FROM AUTHOR]