207 results on '"Jiang, D.S."'
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2. The self-compensation effect of heavily Mg doped p-GaN films studied by SIMS and photoluminescence
3. Enhancing the performance of GaN based LDs by using low In content InGaN instead of GaN as lower waveguide layer
4. The compensation role of deep defects in the electric properties of lightly Si-doped GaN
5. The influence of thermal annealing process after GaN cap layer growth on structural and optical properties of InGaN/InGaN multi-quantum wells
6. Improvement of thermal stability of InGaN/GaN multiple-quantum-well by reducing the density of threading dislocations
7. Compensation of magnesium by residual carbon impurities in p-type GaN grown by MOCVD
8. Enhancing the performance of InGaN/GaN multiple quantum well blue laser diodes by suppressing the overflow of holes
9. Mg concentration profile and its control in the low temperature grown Mg-doped GaN epilayer
10. Enhancement of the emission efficiency of InGaN films by suppressing the incorporation of unintentional gallium atoms
11. Different annealing temperature suitable for different Mg doped P-GaN
12. Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3
13. Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs
14. Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells
15. Investigation on the performance and efficiency droop behaviors of InGaN/GaN multiple quantum well green LEDs with various GaN cap layer thicknesses
16. GaN high electron mobility transistors with AlInN back barriers
17. The difference in efficiency droop behaviors of two InGaN/GaN multiple-quantum-well green light-emitting diodes with modified structural parameters
18. Photovoltaic response of InGaN/GaN multi-quantum well solar cells enhanced by inserting thin GaN cap layers
19. A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold current
20. Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition
21. Effect of dual buffer layer structure on the epitaxial growth of AlN on sapphire
22. Effect of In incorporation parameters on the electroluminescence of blue–violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition
23. Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD)
24. Hole concentration test of p-type GaN by analyzing the spectral response of p–n + structure GaN ultraviolet photodetector
25. An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells
26. Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer
27. Defect evolution and accompanied change of electrical properties during the GaN growth by metalorganic chemical vapor deposition
28. Distinct two dimensional lateral ordering of self-assembled quantum dots
29. MOCVD growth of InN using a GaN buffer
30. Deposition of CdS thin films onto Si(111) substrate by PLD with femtosecond pulse
31. Structural characterization of CdS thin film on quartz formed by femtosecond pulsed laser deposition at high temperature
32. Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic chemical vapor deposition
33. The comparison between CdS thin films grown on Si(111) substrate and quartz substrate by femtosecond pulsed laser deposition
34. Enhanced infrared absorption of spatially ordered quantum dot arrays
35. The influence of V/III ratio in the initial growth stage on the properties of GaN epilayer deposited on low temperature AlN buffer layer
36. Layer-by-layer assembly of polyelectrolyte/TiO 2 thin films with reflection-enhancing function
37. The influence of the silicon substrate temperature on structural and optical properties of thin-film cadmium sulfide formed with femtosecond laser deposition
38. Effect of Al incorporation on the AlGaN growth by metalorganic chemical vapor deposition
39. Effects of underfill materials on the reliability of low- K flip-chip packaging
40. Structural and optical properties of violet InGaN/AlInGaN light-emitting diodes grown by MOCVD
41. In xGa1-xAsALyGa1-zGa1-zAs asymmetric step quantum-well middle wavelength infrared detectors
42. Photoluminescence characteristics of GaAsSbN/GaAs epilayers lattice-matched to GaAs substrates
43. Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells
44. The effect of inserting strain-compensated GaNAs layers on the luminescence properties of GaInNAs/GaAs quantum well
45. The effects of rapid thermal annealing on the optical properties of Zn 1− xMn xSe epilayer grown by MOCVD on GaAs substrate
46. Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots
47. INFRARED STUDY OF PHONON AND IMPURITY ABSORPTIONS IN AlSb
48. Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures
49. Transport property in narrow barrier GaAs/AlAs superlattice under hydrostatic pressure
50. Self-sustained oscillations caused by magnetic field in a weakly-coupled GaAs/AlAs superlattice
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