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Zeolitic imidazolate framework-8 (ZIF-8) is a versatile candidate for next-generation electronics owing to its adjustable lattice and physicochemical properties. However, the utilization of ZIF-8 for the fabrication of solid-state electronics and circuit components, such as field-effect transistors (FETs), has not been realized thus far, primarily due to ongoing debates surrounding its electrical properties. In this work, we fabricated n-type FETs using ZIF-8@ZnO nanorod arrays. A significant hysteresis behavior was observed. It was demonstrated that this hysteresis cannot be assigned to the well-established ferroelectric effect but rather to the polarization of ZIF-8, wherein the electric field of the gate aligns the dipole of 2-methylimidazole through molecular orientation rotation. It was clarified that the process of annealing in air can result in the chemisorption of oxygen on methylimidazole, leading to a limitation in the rotation of methylimidazole. This restriction ultimately causes the depolarization of ZIF-8, resulting in the erasure of hysteresis. This study unfolds the tunable hysteresis behavior of ZIF-8 and its sensibility to oxygen, thereby highlighting the potential applications of ZIF-8 in FETs, nonvolatile memories, and gas sensors.

After more than five decades, Moore’s Law for transistors is approaching the end of the international technology roadmap of semiconductors (ITRS). The fate of complementary metal oxide semiconductor (CMOS) architecture has become increasingly unknown. In this era, 3D transistors in the form of gate-all-around (GAA) transistors are being considered as an excellent solution to scaling down beyond the 5 nm technology node, which solves the difficulties of carrier transport in the channel region which are mainly rooted in short channel effects (SCEs). In parallel to Moore, during the last two decades, transistors with a fully depleted SOI (FDSOI) design have also been processed for low-power electronics. Among all the possible designs, there are also tunneling field-effect transistors (TFETs), which offer very low power consumption and decent electrical characteristics. This review article presents new transistor designs, along with the integration of electronics and photonics, simulation methods, and continuation of CMOS process technology to the 5 nm technology node and beyond. The content highlights the innovative methods, challenges, and difficulties in device processing and design, as well as how to apply suitable metrology techniques as a tool to find out the imperfections and lattice distortions, strain status, and composition in the device structures.

Excessive chemical fertilization in protected horticulture has caused nutrient accumulation, reduction of soil biodiversity, and subsequently soil degradation. Pyroligneous vinegar is a byproduct of pyrolysis for biochar production. While there has been an increase in interest in using pyroligneous vinegar as an amendment to improve soil quality, a paucity of data exists of its effect on the growth of acidophilous plants such as azalea (Rhododendron). To address this, we investigated the changes in the growth of azalea and soil microbial abundance, specifically those involved in nitrogen cycling in the rhizosphere with amendment of conventional inorganic NPK fertilizer (NPK) and four dilutions of pyroligneous vinegar each with matched NPK content. The results showed that the treatments of pyroligneous vinegar increased plant biomass (51%-99%), root length (29%-81%) and surface area (63%-151%), and nitrogen use efficiency (83%-299%) compared to NPK alone. The pyroligneous vinegar treatments decreased soil pH and increased the contents of rhizosphere soil dissolved organic carbon and nitrate, and changed potential denitrification activity. Compared with NPK, pyroligneous vinegar increased archaeal and bacterial amoA genes (AOA and AOB) abundances (45% − 79% and 39% − 75%, respectively) in nitrification, but inhibited the denitrification gene abundances (i.e. nirS and nirK abundance up to 21% lower). Pyroligneous vinegar increased the ratio of nosZ/(nirS + nirK), suggesting an increased potential to lower nitrous oxide emissions. Correlation analysis indicated that nitrogen use efficiency correlated positively with AOA and AOB, but negatively with nirS and nirK abundance. Therefore, our study suggests that pyroligneous vinegar could improve the growth of acidophilous plants and increase their nitrogen use efficiency by changing nitrogen cycling related functional genes, and could be a potential soil amendment in protected horticulture.

Optogenetic technology is to express the channel proteins that can be act on light for realizing the activity of neurons activated and inhibited. Here, inspired by optogenetics, a flexible side‐gate artificial synaptic transistor based on ion gel and graphene is demonstrated, where the long‐term remembering or forgetting could be activated by the 450 nm light stimulus. Taking advantage of in‐plane‐field tunable carrier transport in graphene and the high ionic motion of ion gels, various synaptic functions under flatting or bending conditions by electric stimuli are successfully mimicked, including inhibition postsynaptic current, excitatory postsynaptic current, and paired‐pulse facilitation. A light‐induced forgetting or remembering is demonstrated by long‐term synaptic plasticity under 20 s and 10 Hz positive or negative gate pulse stimulus in the dark and 4 min recovery with light illumination. Moreover, the light stimulus promotes the associative learning and remembering function, which is demonstrated by Pavlov's dog experiment with electrical pulses and light stimulus. Such light‐assisted learning and memory function on synaptic plasticity can be attributed to the photogenerated electrons trapping effects in our device. The authors’ results provide a feasible strategy for realizing flexible light–electrical‐stimulus synaptic transistors and developing the low‐energy flexible neuromorphic optoelectronic hardware platform.

The AP2/ERF gene family is one of the most conserved and important transcription factor families mainly occurring in plants with various functions in regulating plant biological and physiological processes. However, little comprehensive research has been conducted on the AP2/ERF gene family in Rhododendron (specifically, Rhododendron simsii), an important ornamental plant. The existing whole-genome sequence of Rhododendron provided data to investigate the AP2/ERF genes in Rhododendron on a genome-wide scale. A total of 120 Rhododendron AP2/ERF genes were identified. The phylogenetic analysis showed that RsAP2 genes were classified into five main subfamilies, AP2, ERF, DREB, RAV and soloist. Cis-acting elements involving plant growth regulators, response to abiotic stress and MYB binding sites were detected in the upstream sequences of RsAP2 genes. A heatmap of RsAP2 gene expression levels showed that these genes had different expression patterns in the five developmental stages of Rhododendron flowers. Twenty RsAP2 genes were selected for quantitative RT-PCR experiments to clarify the expression level changes under cold, salt and drought stress treatments, and the results showed that most of the RsAP2 genes responded to these abiotic stresses. This study generated comprehensive information on the RsAP2 gene family and provides a theoretical basis for future genetic improvement.

Among photodetectors, avalanche photodiodes (APDs) have an important place due to their excellent sensitivity to light. APDs transform photons into electrons and then multiply the electrons, leading to an amplified photocurrent. APDs are promising for faint light detection owing to this outstanding advantage, which will boost LiDAR applications. Although Si APDs have already been commercialized, their spectral region is very limited in many applications. Therefore, it is urgently demanded that the spectral region APDs be extended to the short-wavelength infrared (SWIR) region, which means better atmospheric transmission, a lower solar radiation background, a higher laser eye safety threshold, etc. Up until now, both Ge (GeSn) and InGaAs were employed as the SWIR absorbers. The aim of this review article is to provide a full understanding of Ge(GeSn) and InGaAs for PDs, with a focus on APD operation in the SWIR spectral region, which can be integrated onto the Si platform and is potentially compatible with CMOS technology.

The development of the low dislocation density of the Si-based GaAs buffer is considered the key technical route for realizing InAs/GaAs quantum dot lasers for photonic integrated circuits. To prepare the high-quality GaAs layer on the Si substrate, we employed an engineered Ge-buffer on Si, used thermal cycle annealing, and introduced filtering layers, e.g., strained-layer superlattices, to control/reduce the threading dislocation density in the active part of the laser. In this way, a low defect density of 2.9 × 107 cm−2 could be achieved in the GaAs layer with a surface roughness of 1.01 nm. Transmission electron microscopy has been applied to study the effect of cycling, annealing, and filtering layers for blocking or bending threading-dislocation into the InAs QDs active region of the laser. In addition, the dependence of optical properties of InAs QDs on the growth temperature was also investigated. The results show that a density of 3.4 × 1010 InAs quantum dots could be grown at 450 °C, and the photoluminescence exhibits emission wavelengths of 1274 nm with a fullwidth at half-maximum (FWHM) equal to 32 nm at room temperature. The laser structure demonstrates a peak at 1.27 μm with an FWHM equal to 2.6 nm under a continuous-wave operation with a threshold current density of ∼158 A/cm2 for a 4-μm narrow-ridge width InAs QD device. This work, therefore, paves the path for a monolithic solution for photonic integrated circuits when III−V light sources (which is required for Si photonics) are grown on a Ge-platform (engineered Ge-buffer on Si) for the integration of the CMOS part with other photonic devices on the same chip in near future.

The 4.2% mismatch at the Si/Ge interface has a significant impact on Si/Ge photodetectors. However, few researchers have attempted to determine the major noise source or study the effects of the Si/Ge interface on the dark current, the responsivity and the 3-dB bandwidth of these devices. In this letter, we found that the dark current was dominated by generation-recombination processes that were enhanced by trap-assisted-tunneling around the interface below 220 K, with a characteristic tunneling energy of E00 = 14 meV corresponding to an effective mass of m* = 18m0. This behavior can be explained by the rise in the heavy-hole band caused by the compressive strain on the Ge layer. When the temperature increased above 240 K, Shockley-Read-Hall recombination was clearly observed and believed to be dominant. The responsivity, the collection efficiency and the absorption efficiency were all extracted at 850 nm, 1310 nm, and 1550 nm. The absorption coefficient around the interface was found to be lower than that of the bulk material. In addition, comparison of the measured 3-dB frequency (~20.6 GHz @ -0.5 V) with the theoretical value (~29.37 GHz) indicated that defects have little effect on the bandwidth at high frequencies.

The realization of high-performance Si-based III-V quantum-dot (QD) lasers has long attracted extensive interest in optoelectronic circuits. This manuscript presents InAs/GaAs QD lasers integrated on an advanced GaAs virtual substrate. The GaAs layer was originally grown on Ge as another virtual substrate on Si wafer. No patterned substrate or sophisticated superlattice defect-filtering layer was involved. Thanks to the improved quality of the comprehensively modified GaAs crystal with low defect density, the room temperature emission wavelength of this laser was allocated at 1320 nm, with a threshold current density of 24.4 A/cm−2 per layer and a maximum single-facet output power reaching 153 mW at 10 °C. The maximum operation temperature reaches 80 °C. This work provides a feasible and promising proposal for the integration of an efficient O-band laser with a standard Si platform in the near future.

In this manuscript, a novel dual-step selective epitaxy growth (SEG) of Ge was proposed to significantly decrease the defect density and to create fully strained relaxed Ge on a Si substrate. With the single-step SEG of Ge, the threading defect density (TDD) was successfully decreased from 2.9 × 107 cm−2 in a globally grown Ge layer to 3.2 × 105 cm−2 for a single-step SEG and to 2.84 × 105 cm−2 for the dual-step SEG of the Ge layer. This means that by introducing a single SEG step, the defect density could be reduced by two orders of magnitude, but this reduction could be further decreased by only 11.3% by introducing the second SEG step. The final root mean square (RMS) of the surface roughness was 0.64 nm. The strain has also been modulated along the cross-section of the sample. Tensile strain appears in the first global Ge layer, compressive strain in the single-step Ge layer and fully strain relaxation in the dual-step Ge layer. The material characterization was locally performed at different points by high resolution transmission electron microscopy, while it was globally performed by high resolution X-ray diffraction and photoluminescence.

In this manuscript, the integration of a strained Ge channel with Si-based FinFETs was investigated. The main focus was the preparation of high-aspect-ratio (AR) fin structures, appropriate etching topography and the growth of germanium (Ge) as a channel material with a highly compressive strain. Two etching methods, the wet etching and in situ HCl dry etching methods, were studied to achieve a better etching topography. In addition, the selective epitaxial growth of Ge material was performed on a patterned substrate using reduced pressure chemical vapor deposition. The results show that a V-shaped structure formed at the bottom of the dummy Si-fins using the wet etching method, which is beneficial to the suppression of dislocations. In addition, compressive strain was introduced to the Ge channel after the Ge selective epitaxial growth, which benefits the pMOS transport characteristics. The pattern dependency of the Ge growth over the patterned wafer was measured, and the solutions for uniform epitaxy are discussed.

GeSn materials have attracted considerable attention for their tunable band structures and high carrier mobilities, which serve well for future photonic and electronic applications. This research presents a novel method to incorporate Sn content as high as 18% into GeSn layers grown at 285–320 °C by using SnCl4 and GeH4 precursors. A series of characterizations were performed to study the material quality, strain, surface roughness, and optical properties of GeSn layers. The Sn content could be calculated using lattice mismatch parameters provided by X-ray analysis. The strain in GeSn layers was modulated from fully strained to partially strained by etching Ge buffer into Ge/GeSn heterostructures . In this study, two categories of samples were prepared when the Ge buffer was either laterally etched onto Si wafers, or vertically etched Ge/GeSnOI wafers which bonded to the oxide. In the latter case, the Ge buffer was initially etched step-by-step for the strain relaxation study. Meanwhile, the Ge/GeSn heterostructure in the first group of samples was patterned into the form of micro-disks. The Ge buffer was selectively etched by using a CF4/O2 gas mixture using a plasma etch tool. Fully or partially relaxed GeSn micro-disks showed photoluminescence (PL) at room temperature. PL results showed that red-shift was clearly observed from the GeSn micro-disk structure, indicating that the compressive strain in the as-grown GeSn material was partially released. Our results pave the path for the growth of high quality GeSn layers with high Sn content, in addition to methods for modulating the strain for lasing and detection of short-wavelength infrared at room temperature.

Gate-all-around (GAA) field-effect transistors have been proposed as one of the most important developments for CMOS logic devices at the 3 nm technology node and beyond. Isotropic etching of silicon–germanium (SiGe) for the definition of nano-scale channels in vertical GAA CMOS and tunneling FETs has attracted more and more attention. In this work, the effect of doping on the digital etching of Si-selective SiGe with alternative nitric acids (HNO3) and buffered oxide etching (BOE) was investigated in detail. It was found that the HNO3 digital etching of SiGe was selective to n+-Si, p+-Si, and intrinsic Si. Extensive studies were performed. It turned out that the selectivity of SiGe/Si was dependent on the doped types of silicon and the HNO3 concentration. As a result, at 31.5% HNO3 concentration, the relative etched amount per cycle (REPC) and the etching selectivity of Si0.72Ge0.28 for n+-Si was identical to that for p+-Si. This is particularly important for applications of vertical GAA CMOS and tunneling FETs, which have to expose both the n+ and p+ sources/drains at the same time. In addition, the values of the REPC and selectivity were obtained. A controllable etching rate and atomically smooth surface could be achieved, which enhanced carrier mobility.

This article presents a novel method to grow a high-quality compressive-strain Ge epilayer on Si using the selective epitaxial growth (SEG) applying the RPCVD technique. The procedures are composed of a global growth of Ge layer on Si followed by a planarization using CMP as initial process steps. The growth parameters of the Ge layer were carefully optimized and after cycle-annealing treatments, the threading dislocation density (TDD) was reduced to 3 × 107 cm−2. As a result of this process, a tensile strain of 0.25% was induced, whereas the RMS value was as low as 0.81 nm. Later, these substrates were covered by an oxide layer and patterned to create trenches for selective epitaxy growth (SEG) of the Ge layer. In these structures, a type of compressive strain was formed in the SEG Ge top layer. The strain amount was −0.34%; meanwhile, the TDD and RMS surface roughness were 2 × 106 cm−2 and 0.68 nm, respectively. HRXRD and TEM results also verified the existence of compressive strain in selectively grown Ge layer. In contrast to the tensile strained Ge layer (globally grown), enhanced PL intensity by a factor of more than 2 is partially due to the improved material quality. The significantly high PL intensity is attributed to the improved crystalline quality of the selectively grown Ge layer. The change in direct bandgap energy of PL was observed, owing to the compressive strain introduced. Hall measurement shows that a selectively grown Ge layer possesses room temperature hole mobility up to 375 cm2/Vs, which is approximately 3 times larger than that of the Ge (132 cm2/Vs). Our work offers fundamental guidance for the growth of high-quality and compressive strain Ge epilayer on Si for future Ge-based optoelectronics integration applications.

In this article, we demonstrated novel methods to improve the performance of p-i-n photodetectors (PDs) on a germanium-on-insulator (GOI). For GOI photodetectors with a mesa diameter of 10 μm, the dark current at −1 V is 2.5 nA, which is 2.6-fold lower than that of the Ge PD processed on Si substrates. This improvement in dark current is due to the careful removal of the defected Ge layer, which is formed with the initial growth of Ge on Si. The bulk leakage current density and surface leakage density of the GOI detector at −1 V are as low as 1.79 mA/cm2 and 0.34 μA/cm, respectively. GOI photodetectors with responsivity of 0.5 and 0.9 A/W at 1550 and 1310 nm wavelength are demonstrated. The optical performance of the GOI photodetector could be remarkably improved by integrating a tetraethylorthosilicate (TEOS) layer on the oxide side due to the better optical confinement and resonant cavity effect. These PDs with high performances and full compatibility with Si CMOS processes are attractive for applications in both telecommunications and monolithic optoelectronics integration on the same chip.

Crosses among single-, double- and multi-petal jasmine cultivars (Jasminum sambac Aiton) are unable to easily generate hybrids. To identify the reproductive barriers restricting hybrid set, dynamic changes in jasmine pollen viability and pistil receptivity were compared at different flowering stages. Pollen-pistil interactions in six reciprocal crosses were also investigated to characterize pollen-stigma compatibility. Additionally, paraffin sections of pollinated embryo sacs were prepared for subsequent analyses of developmental status. Furthermore, pistil cell ultrastructural characteristics were observed to reveal cytological mechanism regulating pistil receptivity and the pollen-pistil interactions. We observed that pollen viability and stigma receptivity varied depending on petal phenotype and flowering stage and were easily lost during flowering. Different reciprocal crosses exhibited varied pollen-stigma compatibilities according to the pollen germination rates. Although some pollen grains germinated normally on maternal stigmas, the pollen tubes were arrested in the pistils and were unable to reach the ovaries. Additionally, the embryo sacs remained unfertilized until degenerating. Therefore, jasmine crosses are affected by pre-fertilization reproductive barriers. Low pollen fertility and poor stigma receptivity are detrimental to pollen germination and pollen-pistil compatibility, indicating they are two factors affecting hybrid set. Ultrastructural observation of the pistil cells revealed that cell death occurred during flowering. Thus, the early and rapid senescence of pistils is likely responsible for the decreased pistil receptivity and inhibited pollen tube growth. These findings may be relevant for future jasmine hybridizations. They provide new insights for the development of methods to overcome reproductive barriers and may also be useful for clarifying the phylogenetic relationships among jasmine cultivars with differing petal phenotypes.

The quantitative real-time polymerase chain reaction (qRT-PCR) approach has become a widely used method to analyze expression patterns of target genes. The selection of an optimal reference gene is a prerequisite for the accurate normalization of gene expression in qRT-PCR. The present study constitutes the first systematic evaluation of potential reference genes in Rhododendron molle G. Don. Eleven candidate reference genes in different tissues and flowers at different developmental stages of R. molle were assessed using the following three software packages: GeNorm, NormFinder and BestKeeper. The results showed that EF1-α (elongation factor 1-alpha), 18S (18s ribosomal RNA) and RPL3 (ribosomal protein L3) were the most stable reference genes in developing rhododendron flowers and, thus, in all of the tested samples, while tublin (TUB) was the least stable. ACT5 (actin), RPL3, 18S and EF1-α were found to be the top four choices for different tissues, whereas TUB was not found to favor qRT-PCR normalization in these tissues. Three stable reference genes are recommended for the normalization of qRT-PCR data in R. molle. Furthermore, the expression profiles of RmPSY (phytoene synthase) and RmPDS (phytoene dehydrogenase) were assessed using EF1-α, 18S, ACT5, and RPL3 and their combination as internals. Similar trends were found, but these trends varied when the least stable reference gene TUB was used. The results further prove that it is necessary to validate the stability of reference genes prior to their use for normalization under different experimental conditions. This study provides useful information for reliable qRT-PCR data normalization in gene studies of R. molle.

Due to the low temperatures, the heating efficiency of air source heat pump systems during the winter is very low. To address this problem, a low-temperature solar hot water system was added to a basic air source heat pump system. Several parameters were tested and analyzed. The heat collection efficiency of the solar collector was analyzed under low-temperature conditions. The factors that affect the performance of the heat pumps, such as the fluid temperature, pressure, and energy savings, were analyzed for cases where the solar energy auxiliary heat pump and the air source heat pump are used independently. The optimal heating temperature and the changes in the fluid temperature were determined. The influence of the compression ratio and the coefficient of performance (COP) were investigated theoretically. The results revealed the parameters that are important to the performance of the system. Several measures for improving the COP of the heat pump units are provided for other applications and future research.

Abstract The Amur tiger is currently confronted with challenges of anthropogenic development, leading to its population becoming fragmented into two geographically isolated groups: smaller and larger ones. Small and isolated populations frequently face a greater extinction risk, yet the small tiger population’s genetic status and survival potential have not been assessed. Here, a total of 210 samples of suspected Amur tiger feces were collected from this small population, and the genetic background and population survival potentials were assessed by using 14 microsatellite loci. Our results demonstrated that the mean number of alleles in all loci was 3.7 and expected heterozygosity was 0.6, indicating a comparatively lower level of population genetic diversity compared to previously reported studies on other subspecies. The genetic estimates of effective population size (Ne) and the Ne/N ratio were merely 7.6 and 0.152, respectively, representing lower values in comparison to the Amur tiger population in Sikhote-Alin (the larger group). However, multiple methods have indicated the possibility of genetic divergence within our isolated population under study. Meanwhile, the maximum kinship recorded was 0.441, and the mean inbreeding coefficient stood at 0.0868, both of which are higher than those observed in other endangered species, such as the African lion and the grey wolf. Additionally, we have identified a significant risk of future extinction if the lethal equivalents were to reach 6.26, which is higher than that of other large carnivores. Further, our simulation results indicated that an increase in the number of breeding females would enhance the prospects of this population. In summary, our findings provide a critical theoretical basis for further bailout strategies concerning Amur tigers.

The importance of determining the radon exhalation rate from water surface is emphasized by the increased use of radon and its daughter products as tracers in large-scale circulation studies of the atmosphere. There were many methods to measure radon exhalation from water surface. With the development of radon exhalation rate measurement methods and instruments on the surface of the soil, the rock and building materials, so the radon exhalation rate from water surface can be more accurately measured by applying these improved methods and instruments. In this paper, a cuboid accumulation chamber surrounded by foam boards and a RAD7 were used to measure the radon exhalation rate on the water surface at three different positions by Yixin lake. Each measurement was performed 2 h. The radon exhalation rate from the water surface was about 6 × 10−3 Bq m−2s−1. The thoron exhalation rate from the water surface also can be estimated, it is about 0.16 Bq m−2s−1. These results hint that the radon transmission from the lake bottom soil to water and then into the atmosphere.

Abstract Background Clear cell renal cell carcinoma (ccRCC) is a prevalent cancer in adult urology, often leading to metastasis and poor prognosis. Recently, advances in tumor immunology and aging research have opened up new possibilities for the treatment of kidney cancer. Therefore, the identification of potential targets and prognostic biomarkers for immunotherapy has become increasingly urgent. Methods Using GSE168845 data, we identified immune-aging-associated differentially expressed genes (IAR-DEGs) by intersecting differentially expressed immune-related genes and aging-related genes. The prognostic value of IAR-DEGs was determined via univariate and multivariate Cox regression analysis, revealing KL as an independent prognostic factor for ccRCC. We also investigated the correlation between KL and various immune-related factors, including immune cell infiltration, immune score, immune checkpoint, MSI, and TIED score. To confirm the expression of KL in ccRCC, we conducted qRT-PCR assays on both ccRCC cell lines and clinical tissue samples, and compared KL expression levels between normal kidney cell line (HK-2) and ACHN, a ccRCC cell line. Finally, we assessed KL protein expression levels in tissues using immunohistochemistry (IHC). Results In this study, we utilized Venn diagram analysis to identify 17 co-expressed immune-aging related DEGs from GSE168845, import database, and MSigDB database. GO and KEGG analysis revealed that the functions of the 17 IAR-DEGs were primarily related to “aging”. Univariate and multivariate Cox analysis validated these 17 genes, and KL was determined to be an independent prognostic factor for ccRCC. The downregulation of KL was observed in ccRCC tissues and was negatively associated with T stage, M stage, pathological stage, and histologic grade (p

In this article, we propose a dual-gate dielectric face tunnel field-effect transistor (DGDFTFET) that can exhibit three different output voltage states. Meanwhile, according to the requirements of the ternary operation in the ternary inverter, four related indicators representing the performance of the DGDFTFET are proposed, and we explain the impact of these indicators on the inverter and confirm that better indicators can be obtained by choosing appropriate design parameters for the device. Then, the ternary inverter implemented with this device can exhibit voltage transfer characteristics (VTCs) with three stable output voltage levels and bigger static noise margins (SNMs). In addition, by comparing the indicators of the DGDFTFET and a face tunnel field-effect transistor (FTFET), as well as the SNM of inverters, it is demonstrated that the performance of the DGDFTFET far surpasses the FTFET.

Abstract Human Epidermal Growth Factor Receptor-2 (HER2)-negative breast cancers (BCs) contain HER2-low and HER2-zero ones. HER2-low breast cancer has been receiving wide-spread concerns as the marvelous effect of novel anti-HER2 antibody-drug conjugates, however, the characteristic remains unknown. Our aim was to explore the differences of clinicopathological indicators and survival outcomes between HER2-low and HER2-0 breast cancers. We retrospectively analyzed 501 invasive breast cancer patients with complete data on HER2 status from 2017 to 2021 in our single center, of whom 415 HER2 negative patients were included for subsequent analysis. Each cohort was further divided into hormone receptor (HR) positive and HR negative subgroup. Clinicopathological factors and survival outcomes were collected and compared between HER2-low BCs and HER2-0 BCs. HER2-low BCs was obviously higher in HR positive BCs, with 277 (90.5%) HER2-low HR positive patients, 29 (9.5%) HER2-low HR negative patients, 68 (62.4%) HER2-0 HR positive patients and 41 (37.6%) HER2-0 HR negative patients (P

Background: The relationship between inflammatory bowel disease (IBD) and urological cancers has been identified in epidemiological and observational studies, while the causality remains uncertain. We examined whether IBD is causally associated with urological cancers in a Mendelian randomization (MR) study.Methods: The causal relationship between IBD, its main subtypes, and urological cancers was investigated using genome-wide association study data. To obtain more reliable conclusions, all outcomes were divided into training and validation sets. Eligible single-nucleotide polymorphisms were selected as instrumental variables based on MR analysis assumptions. The inverse variance-weighted (IVW) method was employed as the main method along with four other complementary methods.Results: In this two-sample MR study, no genetic evidence for the causal effect of IBD on urological cancers was found in either the training or validation sets using the IVW method. Similarly, we did not observe any significant association between Crohn’s disease or ulcerative colitis and urological cancers. The results of the other methods are in accordance with those obtained using the IVW method.Conclusion: In this study, we confirmed that IBD is not a causal genetic risk factor for urological cancer in a European population.