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Monolayer transition metal dichalcogenides (mTMDs) possess a direct band gap and strong PL emission that is highly sensitive to doping level and interfaces, laying the foundation for investigating the contact between mTMD and metal

Two-dimensional (2D) van der Waals heterostructures have attracted enormous research interests due to their emergent electrical and optical properties. The comprehensive understanding and efficient control of interlayer couplings in such devices are crucial for realizing their functionalities, as well as for improving their performance. Here, we report a successful manipulation of interlayer charge transfer between 2D materials by varying different stacking layers consisting of graphene, hexagonal boron nitride, and tungsten disulfide. Under visible-light excitation, despite being separated by few-layer boron nitride, the graphene and tungsten disulfide exhibit clear modulation of their doping level, i.e., a change of the Fermi level in graphene as large as 120 meV and a net electron accumulation in WS2. By using a combination of micro-Raman and photoluminescence spectroscopy, we demonstrate that the modulation is originated from simultaneous manipulation of charge and/or energy transfer between each of the two adjacent layers. Ministry of Education (MOE) National Research Foundation (NRF) Accepted version

Two-dimensional (2D) transition metal chalcogenides (TMDs) are regarded as promising materials for micro-optoelectronic devices and next-generation logic devices due to their novel optoelectronic properties, such as strong excitonic effects, tunable direct bandgap from visible to near-infrared regions, valley pseudospin degree of freedom, and so on. Recently, triggered by the growing demand to optimize the performance of TMDs devices, external field regulation engineering has attracted great attention. The goal of this operation is to exploit the external fields to control exciton dynamics in 2D TMDs, including exciton formation and relaxation, and to finally achieve high-performance 2D TMDs devices. Although the regulation strategies of exciton dynamics in 2D TMDs have been well explored, the underlying mechanisms of different regulation strategies need to be further understood due to the complex many-body interactions in exciton dynamics. Here, we first give a brief summary of the fundamental processes of exciton dynamics in 2D TMDs and then summarize the main field-regulation strategies. Particular emphasis is placed on discussing the underlying mechanisms of how different field-regulation strategies control varied fundamental processes. A deep understanding of field regulation provides direct guidelines for the integrated design of 2D TMDs devices in the future.

In terms of interlayer trions, electronic excitations in van der Waals heterostructures (vdW HS) can be classified into Type I (i.e., two identical charges in the same layer) and Type II (i.e., two identical charges in the different layers). Type I interlayer trions have been investigated theoretically and experimentally. By contrast, Type II interlayer trions remain elusive in vdW HS, due to inadequate free charges, unsuitable band alignment, reduced Coulomb interactions and poor interface quality, etc. Here we report the first observation of Type II interlayer trions by exploring band alignments and choosing an atomically thin organic-inorganic system-monolayer WSe

Two-dimensional (2D) materials such as graphene, transition metal dichalcogenides and phosphorene have emerged as brand new photonic materials with huge potential in a variety of optical applications in recent years, due to their unique properties and multiple functions. Owning to the significantly increased surface to volume ratio in the atomic thin layered structure, the interactions between 2D materials with light become remarkably strong in either elastic or inelastic interactions. Most of previous studies were focused on the inelastic interactions between 2D materials with light, namely Raman and photoluminescence properties. However, we found the elastic interactions between them and light are also very attractive. Based on the properties discovered, we demonstrated several optical applications, such as atomically thin optical lenses and gratings. On the other hand, we found the inelastic interactions with light in the 2D limitation affected a lot by the external environment, which could serve as a unique method to control the working status of the optical devices to meet multiple application needs. Several progresses were demonstrated such as control of excitons and trions in few-layer MoS2 via the co-modulations by both temperature and electric field and the defect engineering by oxygen plasma etching to stimulate new photon emission.

Coulomb-bound electron-hole pairs (excitons) dominate the optical response of atomically-thin transition metal dichalcogenides (TMDs) semiconductors. The photoluminescence spectrum in W-based TMDs monolayers (i.e. WS2 and WSe2) at low temperature exhibits much richer features than Mo-based TMDs monolayers, whose origin is currently not well understood. Herein, by using near-resonant photoluminescence excitation spectroscopy, we probe the scattering events between excitons and phonons with large k ˆ -momentum, which provides strong evidence for the momentum-indirect nature of the optical bandgap in monolayer WS2. The scattering between carriers and zone-edge phonons creates excitons at different valleys, among which, the lowest-energy is momentum-indirect. Our findings highlight that more efforts are required to solve the current debate on the inherent bandgap nature of TMD monolayers and the complex photoluminescence spectrum reported on W-based compounds.

In order to control the quality of spline shaft in rolling process, an efficient measurement method for rolling performance evaluation is essential. Here, a newly developed on-machine non-contact measurement prototype based on laser displacement sensor and rotary encoder is proposed. The prototype is intended for the automated evaluation of the spline shaft rolling performance by measuring the dimensional change of tooth root, which is correlated with the surface residual stress and micro-hardness. Laser displacement sensor and rotary encoder are used to record the polar radius and polar angle of each point on measuring section. Data are displayed in a polar coordinate system and fitted in a gear. Through multipoint curvature method, the roots of spline shaft are recognized automatically. Then, the dimensional change can be calculated by fitting the radius of the tooth root circle before and after rolling. Systematic error covering offset error is also analyzed and calibrated. At last, measurement test results show that the system has advantages of simple structure, high measurement precision (radius error

It has been a long-standing challenge to produce air-stable few- or monolayer samples of phosphorene because thin phosphorene films degrade rapidly in ambient conditions. Here we demonstrate a new highly controllable method for fabricating high quality, air-stable phosphorene films with a designated number of layers ranging from a few down to monolayer. Our approach involves the use of oxygen plasma dry etching to thin down thick-exfoliated phosphorene flakes, layer by layer with atomic precision. Moreover, in a stabilized phosphorene monolayer, we were able to precisely engineer defects for the first time, which led to efficient emission of photons at new frequencies in the near infrared at room temperature. In addition, we demonstrate the use of an electrostatic gate to tune the photon emission from the defects in a monolayer phosphorene. This could lead to new electronic and optoelectronic devices, such as electrically tunable, broadband near infrared lighting devices operating at room temperature., It has been a long-standing challenge to produce air-stable few- or monolayer phosphorene. Here, the authors demonstrate a new highly controllable method for fabricating high quality, air-stable mono- and few-layer phosphorene films, enabling precise defect engineering in monolayer phosphorene.

The surface potential and the efficiency of interfacial charge transfer are extremely important for designing future semiconductor devices based on the emerging two-dimensional (2D) phosphorene. Here, we directly measured the strong layer-dependent surface potential of mono- and few-layered phosphorene on gold, which is consistent with the reported theoretical prediction. At the same time, we used an optical way photoluminescence (PL) spectroscopy to probe charge transfer in the phosphorene-gold hybrid system. We firstly observed highly anisotropic and layer-dependent PL quenching in the phosphorene-gold hybrid system, which is attributed to the highly anisotropic/layer-dependent interfacial charge transfer.

2D semiconductors such as transition metal dichalcogenides (TMDs) and black phosphorus (BP) are currently attracting great attention due to their intrinsic bandgaps and strong excitonic emissions, making them potential candidates for novel optoelectronic applications. Optoelectronic devices fabricated from 2D semiconductors exhibit many-body complexes (exciton, trion, biexciton, etc.) which determine the materials optical and electrical properties. Characterization and manipulation of these complexes have become a reality due to their enhanced binding energies as a direct result from reduced dielectric screening and enhanced Coulomb interactions in the 2D regime. Furthermore, the atomic thickness and extremely large surface-to-volume ratio of 2D semiconductors allow the possibility of modulating their inherent optical, electrical, and optoelectronic properties using a variety of different environmental stimuli. To fully realize the potential functionalities of these many-body complexes in optoelectronics, a comprehensive understanding of their formation mechanism is essential. A topical and concise summary of the recent frontier research progress related to many-body complexes in 2D semiconductors is provided here. Moreover, detailed discussions covering the aspects of fundamental theory, experimental investigations, modulation of properties, and optoelectronic applications are given. Lastly, personal insights into the current challenges and future outlook of many-body complexes in 2D semiconducting materials are presented.

© 2017 American Chemical Society. The tightly bound biexcitons found in atomically thin semiconductors have very promising applications for optoelectronic and quantum devices. However, there is a discrepancy between theory and experiment regarding the fundamental structure of these biexcitons. Therefore, the exploration of a biexciton formation mechanism by further experiments is of great importance. Here, we successfully triggered the emission of biexcitons in atomically thin MoSe2, via the engineering of three critical parameters: dielectric screening, density of trions, and excitation power. The observed binding energy and formation dynamics of these biexcitons strongly support the model that the biexciton consists of a charge attached to a trion (excited state biexciton) instead of four spatially symmetric particles (ground state biexciton). More importantly, we found that the excited state biexcitons not only can exist at cryogenic temperatures but also can be triggered at room temperature in a freestanding bilayer MoSe2. The demonstrated capability of biexciton engineering in atomically thin MoSe2 provides a route for exploring fundamental many-body interactions and enabling device applications, such as bright entangled photon sources operating at room temperature.

The tightly bound biexcitons found in atomically thin semiconductors have very promising applications for optoelectronic and quantum devices. However, there is a discrepancy between theory and experiment regarding the fundamental structure of these biexcitons. Therefore, the exploration of a biexciton formation mechanism by further experiments is of great importance. Here, we successfully triggered the emission of biexcitons in atomically thin MoSe

Two-dimensional transition metal dichalcogenides (TMDCs) show a great potential for optoelectronic applications due to their unique properties. However, the control of their emission through coupling to nanoantennas remains largely unexplored. Importantly, antenna-TMDCs coupling promised to be an effective way for PL control due to the high Purcell enhancement such plasmonic nanostructures can offer. MoSe2, a member of the TMDCs family, is an appealing candidate for coupling to gold plasmonic nanostructures due to its smaller bandgap and higher electron mobility in comparison to the readily used MoS2. Moreover, the PL of MoSe2 occurs in the near-infrared spectral range, where the emissive properties do not suffer from the enhanced dissipation in the gold due to interband transitions. Here we study the interaction between monolayer MoSe2 and plasmonic dipolar antennas demonstrating efficient control of the PL from the TMDC layer. In our experiments, we transfer an exfoliated monolayer MoSe2 onto an array of rectangular gold nanoantenna whose plasmonic resonances overlap with the PL emission of the material. By varying a thickness of the spacer between the MoSe2 layer and the nanoantenna, we demonstrate tuneable PL from threefold enhancement (sample with spacer) to twice quenching (sample without spacer). Furthermore, the observed PL from the TMDC-antenna system demonstrates polarization-dependent properties, thus offering the possibility of polarization-based PL control. Our experimental results are supported by numerical simulations. To the best of our knowledge, this is the first study of Au-MoSe2 plasmonic hybrid structures realizing flexible PL manipulation, which is promising for future optoelectronic applications.

By dry cutting 34CrNiMo6, hard-machined material, with carbide cutting tool and ceramic cutting tool, experimental analysis was carried out in tool wear and cutting force. Cutting tool wear in the process is researched in order to obtain the cutting tool wear patterns and analyze the influencing factors. Meanwhile, it is found that the cutting force with the cutting parameters (cutting speed, cutting depth, feed) changes regularly, and then the experience formula of cutting force can be established.

Monolayer molybdenum diselenide (MoSe2), a member of the TMDCs family, is an appealing candidate for coupling to gold plasmonic nanostructures as it has smaller bandgap and higher electron mobility in comparison to frequently studied molybdenum disulfide (MoS2). The PL of MoSe2 occurs in the near-infrared spectral range where the emissive properties do not suffer from the enhanced dissipation in the gold due to inter-band transitions. Here, we study the interaction between monolayer MoSe2 and plasmonic dipolar antennas in resonance with the PL emission of MoSe2. By varying the thickness of the spacer between the MoSe2 layer and nanoantenna, we demonstrate manipulation of the PL intensity from nearly fourfold quenching to approximately threefold enhancement. Furthermore, we show that the coupled TMDC-nanoantenna system exhibits strong polarization-dependent PL, thus offering the possibility of polarization-based emission control. Our experimental results are supported by numerical simulations as well. To the best of our knowledge, this is the first study of Au-MoSe2 plasmonic hybrid structures realizing flexible PL manipulation.

Two-dimensional (2D) materials have become very important building blocks for electronic, photonic, and phononic devices. The 2D material family has four key members, including the metallic graphene, transition metal dichalcogenide (TMD) layered semiconductors, semiconducting black phosphorous, and the insulating h-BN. Owing to the strong quantum confinements and defect-free surfaces, these atomically thin layers have offered us perfect platforms to investigate the interactions among photons, electrons and phonons. The unique interactions in these 2D materials are very important for both scientific research and application engineering. In this talk, I would like to briefly summarize and highlight the key findings, opportunities and challenges in this field. Next, I will introduce/highlight our recent achievements. We demonstrated atomically thin micro-lens and gratings using 2D MoS2, which is the thinnest optical component around the world. These devices are based on our discovery that the elastic light-matter interactions in highindex 2D materials is very strong. Also, I would like to introduce a new two-dimensional material phosphorene. Phosphorene has strongly anisotropic optical response, which creates 1D excitons in a 2D system. The strong confinement in phosphorene also enables the ultra-high trion (charged exciton) binding energies, which have been successfully measured in our experiments. Finally, I will briefly talk about the potential applications of 2D materials in energy harvesting.

Exciton brightening in monolayer phosphorene is achieved via the dimensionality modification of excitons from quasi-1D to 0D. The luminescence quantum yield of 0D-like excitons is >33.6 times larger than that of quasi-1D free excitons. 2D phosphorene with quasi-1D free excitons and 0D-like excitons provides a unique platform to investigate the fundamental phenomena in the ideal 2D-1D-0D hybrid system.

The control of exciton and triondynamics in bilayer MoS2 is demonstrated, via the comodulations by both temperature and electric field. The calculations here show that the band structure of bilayer MoS2 changes from indirect at room temperature toward direct nature as temperature decreases, which enables the electrical tunability of the K-K direct PL transition in bilayer MoS2 at low temperature.

Molybdenum telluride (MoTe2) has emerged as a special member in the family of two-dimensional transition metal dichalcogenide semiconductors, owing to the strong spin-orbit coupling and relatively small energy gap, which offers new applications in valleytronic and excitonic devices. Here we successfully demonstrated the electrical modulation of negatively charged (X(-)), neutral (X(0)), and positively charged (X(+)) excitons in monolayer MoTe2 via photoluminescence spectroscopy. The binding energies of X(+) and X(-) were measured to be ∼24 and ∼27 meV, respectively.The exciton binding energy of monolayer MoTe2 was measured to be 0.58 ± 0.08 eV via photoluminescence excitation spectroscopy, which matches well with our calculated value of 0.64 eV.

The anisotropic nature of the new two-dimensional (2D) material phosphorene, in contrast to other 2D materials such as graphene and transition metal dichalcogenide (TMD) semiconductors, allows excitons to be confined in a quasi-one-dimensional (1D) space predicted in theory, leading to remarkable phenomena arising from the reduced dimensionality and screening. Here, we report a trion (charged exciton) binding energy of 190 meV in few-layer phosphorene at room temperature, which is nearly one to two orders of magnitude larger than those in 2D TMD semiconductors (20-30 meV) and quasi-2D quantum wells (1-5 meV). Such a large binding energy has only been observed in truly 1D materials such as carbon nanotubes, whose optoelectronic applications have been severely hurdled by their intrinsically small optical cross-sections. Phosphorene offers an elegant way to overcome this hurdle by enabling quasi-1D excitonic and trionic behaviors in a large 2D area, allowing optoelectronic integration. We experimentally validated the quasi-1D nature of excitonic and trionic dynamics in phospherene by demonstrating completely linearly polarized light emission from excitons and trions. The implications of the extraordinarily large trion binding energy in a higher-than-one-dimensional material are far-reaching. It provides a room-temperature 2D platform to observe the fundamental many-body interactions in the quasi-1D region. The strong photoluminescence emission in phosphorene has been electrically tuned over a large spectral range at room temperature, which opens a new route for tunable light sources.

Two-dimensional (2D) layered molybdenum disulfide (MoS2) has become a very promising candidate semiconducting material for future optoelectronic devices, owing to its unique properties. However, monolayer MoS2 is still a weak photon emitter, compared with other direct band gap semiconductors, which requires extra techniques or complicated steps to enhance its photon emission efficiency. Here, we demonstrated that nanostructured monolayer MoS2, produced by one-step chemical vapor deposition (CVD) growth, shows highly enhanced PL emission. The effective enhancement factor could be up to ∼43. Our results open the door to manipulating the optical properties of future devices by using nanostructured 2D monolayers.

Monolayer phosphorene provides a unique two-dimensional (2D) platform to investigate the fundamental dynamics of excitons and trions (charged excitons) in reduced dimensions. However, owing to its high instability, unambiguous identification of monolayer phosphorene has been elusive. Consequently, many important fundamental properties, such as exciton dynamics, remain underexplored. We report a rapid, noninvasive, and highly accurate approach based on optical interferometry to determine the layer number of phosphorene, and confirm the results with reliable photoluminescence measurements. Furthermore, we successfully probed the dynamics of excitons and trions in monolayer phosphorene by controlling the photo-carrier injection in a relatively low excitation power range. Based on our measured optical gap and the previously measured electronic energy gap, we determined the exciton binding energy to be ∼0.3 eV for the monolayer phosphorene on SiO2/Si substrate, which agrees well with theoretical predictions. A huge trion binding energy of ∼100 meV was first observed in monolayer phosphorene, which is around five times higher than that in transition metal dichalcogenide (TMD) monolayer semiconductor, such as MoS2. The carrier lifetime of exciton emission in monolayer phosphorene was measured to be ∼220 ps, which is comparable to those in other 2D TMD semiconductors. Our results open new avenues for exploring fundamental phenomena and novel optoelectronic applications using monolayer phosphorene. An optical scheme for determining the number of monolayers on two-dimensional materials has been developed. Research into two-dimensional materials is thriving, but developing a way to identify a single monolayer has proved challenging. Now, Jiong Yang and co-workers have used phase-shifting interferometry to deduce the number of phosphorene layers. They then performed power-dependent photoluminescence measurements to determine various excitonic properties of a monolayer on a silicon oxide/silicon substrate. They obtained an exciton binding energy of about 0.3 electron volts, which agrees well with theoretical predictions. The researchers measured a carrier lifetime of approximately 220 picoseconds, which is comparable to that of the transition-metal dichalcogenides, another class of two-dimensional semiconductors. They also measured a trion binding energy of about 100 milli-electron volts, which is around five times higher than that of transition-metal dichalcogenides.