1. Influence of the Sintering Temperature of Al-Doped Higher Manganese Silicide for Improved Thermoelectric Properties
- Author
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Ji-Hyun Beck, Yeon-Jin Baek, Si-Young Son, Yong-Ho Kang, Seung-Ho Yang, Soong-Keun Hyun, and Jong-Bae Kim
- Subjects
Materials science ,Scanning electron microscope ,Doping ,Biomedical Engineering ,Analytical chemistry ,Sintering ,Bioengineering ,02 engineering and technology ,General Chemistry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Hot pressing ,Thermal conductivity ,Electrical resistivity and conductivity ,Seebeck coefficient ,Thermoelectric effect ,General Materials Science ,0210 nano-technology - Abstract
Higher manganese silicide is generally used in thermoelectric devices between 700 K and 900 K. MnSi1.73Al0.005 samples were fabricated by two continuous solid-state reactions followed by hot pressing because the electrical conductivity of all the samples is strongly dependent on Al doping, showing superior thermoelectric performance to the as-synthesized higher manganese silicide. The solid-state-reaction was performed at 1173 K for 6 hours. The effects of the sintering temperature were examined by sintering at three different temperatures: 1273 K, 1323 K and 1373 K. For the surface, microstructural, and electrical properties, scanning electron microscopy, X-ray diffraction, and a series of electric conductivity, Seebeck coefficient, and thermal conductivity analyses were conducted, respectively. As a result, the optimal process temperature for Al-doped higher manganese silicide using a hot-press technique was determined.
- Published
- 2019