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As "molecular bridge," coupling agents can not only realize the covalent connection of composites, but also affect their properties, thus affecting the properties of devices based on them. Herein, leveraging differences in charge conduction properties of the (3‐aminopropyl)trimethoxysilane and 5,10,15,20‐tetrakis(4‐aminophenyl)‐21H,23H‐porphine caused by conjugacy structural differences, two kinds of layer‐by‐layer assembled smart carbon materials with different electrical properties are obtained at the same reduction temperature. The two graphene ultrathin films are then "planted" on Si/SiO2 substrates, respectively, as semiconductor layer and source/drain electrodes to fabricate an ultra‐stable all‐graphene field effect transistor (AG‐FET). Enabled by the covalent functionalized configuration and the functionally diverse of coupling agents, the AG‐FET obtained by this simple method won the high electrical characteristics, the hole, electron mobility, and the shelflife could reach 3.79 cm2/(V·s), 3.78 cm2/(V·s), and 18 months, respectively. In addition, good material stability and excellent device structure endow the device exceptional stability, electrical stability, and solvent resistance, improving its application prospect in solution phase sensing/detection. Such characteristics could be used to sense, transduce, and respond to external stimuli, especially in solution phase to monitor the important analytes, such as Hg2+ in a flowing sewage environment. We believe that such easy‐to‐manufacture AG‐FETs with ultrahigh performance and ultrahigh stability could also show great application prospects in other significant fields. [ABSTRACT FROM AUTHOR]

The pioneering exfoliation of monolayer tungsten diselenide has greatly inspired researchers toward semiconducting applications. WSe2 belongs to a family of transition‐metal dichalcogenides. Similar to graphene, WSe2 and analogous dichalcogenides have layered structures with weak van der Waals interactions between two adjacent layers. First, the readers are presented with the fundamentals of WSe2, such as types, morphologies, and properties. Here, we report the characterization principles and practices such as microscopy, spectroscopy, and diffraction. Second, the methods for obtaining high‐quality WSe2, such as exfoliation, hydrothermal and chemical vapor deposition, are briefly listed. With advantages of light weight, flexibility, and high quantum efficiency, 2D materials may have a niche in optoelectronics as building blocks in p‐n junctions. Therefore, we introduce a state‐of‐the‐art demonstration of heterostructure devices employing the p‐type WSe2 semiconductor. The device architectures include field‐effect transistors, photodetectors, gas sensors, and photovoltaic solar cells. Due to its unique electronic, optical, and energy band properties, WSe2 has been increasingly investigated due to the conductivity of the p‐type charge carrier upon palladium contact. Eventually, the dynamic research on WSe2 and van der Waals heterostructures is summarized to arouse the passion of the 2D research community. [ABSTRACT FROM AUTHOR]

Luminescent zero-dimensional perovskites of Cs4PbBr6 have spurred a great deal of interest on their photoluminescence (PL) origin in the last few years. Regardless of the ongoing debate, it is interesting to realize that only a Br-based zero-dimensional phase was found to be highly luminescent, while its Cl and I counterparts remain elusive. In this study, we report a luminescent Cs4PbI6 zero-dimensional perovskite having both a sharp red emission and a sharp excitation peak. The phase-pure nanocrystal exhibited a polycrystalline nature whereby lattice boundary or active defects may form, leading to an Urbach tail in the absorption peak. A single-particle imaging technique reveals the heterogeneous emission behavior from particle to particle. A temperature-dependent photoluminescence measurement was performed to evaluate the exciton binding energy (172 meV), which classified the nature of the exciton as a Frenkel type. Compared to that of its 3D-counterpart CsPbI3 nanocrystals, the PL of Cs4PbI6 exhibits a robust resistance to both the ion exchange and photobleaching effect. Our study brings a new luminescent member to the zero-dimensional perovskite family, which may inspire more endeavors to exploit those relative phosphors and to unravel the corresponding luminescent origins. [ABSTRACT FROM AUTHOR]

A general method was elaborately developed for the synthesis of pit-rich metal oxide (TiO2, ZrO2 and HfO2) nanocrystals with metallocene dichlorides as precursors. Benefiting from the synergies in numerous pits, Schottky junctions and nitrogen doping, the hybrid nanostructures of pit-rich TiO2 nanocrystals with Ru loading and N doping exhibited enhanced solar water splitting. [ABSTRACT FROM AUTHOR]

A general method was elaborately developed for the synthesis of pit-rich metal oxide (TiO2, ZrO2 and HfO2) nanocrystals with metallocene dichlorides as precursors. Benefiting from the synergies in numerous pits, Schottky junctions and nitrogen doping, the hybrid nanostructures of pit-rich TiO2 nanocrystals with Ru loading and N doping exhibited enhanced solar water splitting.

TiO2/TiN core/shell NBs are successfully synthesized, and used as highly efficient photocatalytic H2 evolution catalysts (120 μmol h-1 g-1) from methanol solution. The TiN shell plays dual roles by extending the light absorption range and also promoting the separation/transfer of photoexcited charge carriers as an electron collector.