1. Novel High-Performance Analog Devices for Advanced Low-Power High-k Metal Gate Complementary Metal–Oxide–Semiconductor Technology
- Author
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Frank Scott Johnson, Moritz Voelker, Muhsin Celik, An L. Steegen, Kenneth J. Stein, Katsura Miyashita, Anda Mocuta, Deleep R. Nair, Shinich Miyake, Gen Tsutsui, Li-Hong Pan, Knut Stahrenberg, Sadaharu Uchimura, Melanie J. Sherony, Jae Hoo Park, Martin Ostermayr, Christian Wiedholz, Richard A. Wachnik, Myung-Hee Na, Jin-Ping Han, Ed Kaste, Franck Arnaud, T. Shimizu, Jaeger Daniel, W. Neumueller, Haoren Zhuang, Ja-hum Ku, Ricardo A. Donaton, Christophe Bernicot, Atsushi Azuma, Nam-Sung Kim, Yoshiro Goto, Kathy Barla, Kisang Kim, Manfred Eller, Jenny Lian, Ron Sampson, H. V. Meer, Sabrina Kohler, D. Chanemougame, Masafumi Hamaguchi, Jewel Liang, Weipeng Li, Guoyong Yang, and J. Sudijono
- Subjects
Materials science ,business.industry ,General Engineering ,General Physics and Astronomy ,Linearity ,Reliability (semiconductor) ,CMOS ,Optoelectronics ,Flicker noise ,Noise (video) ,business ,Metal gate ,Voltage ,High-κ dielectric - Abstract
High performance analog (HPA) devices in high-k metal gate (HKMG) scheme with innovative halo engineering have been successfully demonstrated to produce superior analog and digital performance for low power applications. HPA device was processed “freely” with no extra mask, no extra litho, and no extra process step. This paper details a comprehensive study of the analog and digital characteristics of these HPA devices in comparison with analog control (conventional digital devices with matched geometry). Analog properties such as output voltage gain (also called self-gain), trans-conductance G m, conductance G ds, G m/I d, mismatching (MM) behavior, flicker noise (1/f noise) and current linearity have clearly reflected the advantage of HPA devices over analog control, while DC performance (e.g., I on–I off, I off–V tsat, DIBL, C jswg) and reliability (HCI) have also shown the comparability of HPA devices over control.
- Published
- 2011