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A hybrid interface of solid state single-photon sources and atomic quantum memories is a long sought-after goal in photonic quantum technologies. Here we demonstrate deterministic storage and retrieval of photons from a semiconductor quantum dot in an atomic ensemble quantum memory at telecommunications wavelengths. We store single photons from an InAs quantum dot in a high-bandwidth rubidium vapour based quantum memory, with a total internal memory efficiency of $(12.9 \pm 0.4) \%$. The signal-to-noise ratio of the retrieved photons is $18.2\pm 0.6$, limited only by detector dark counts. This demonstration paves the way to quantum technologies that rely on distributed entanglement, and is especially suited for photonic quantum networks.

Triggered, indistinguishable, single photons play a central role in various quantum photonic implementations. Here, we realize a novel n$^+-$i$-$n$^{++}$ diode structure embedding semiconductor quantum dots: the gated device enables spectral tuning of the transitions and deterministic control of the observed charged states. Blinking-free single-photon emission and high two-photon indistinguishability is observed. The linewidth's temporal evolution is investigated for timescales spanning more than $6$ orders of magnitude, combining photon-correlation Fourier spectroscopy, high-resolution photoluminescence spectroscopy, and two-photon interference (visibility of $V_{\text{TPI, 2ns}}=\left(85.5\pm2.2\right){\%}$ and $V_{\text{TPI, 9ns}}=\left(78.3\pm3.0\right){\%}$). No spectral diffusion or decoherence on timescales above $\sim 9\,\text{ns}$ is observed for most of the dots, and the emitted photons' linewidth $\left(\left(420\pm30\right)\text{MHz}\right)$ deviates from the Fourier-transform limit only by a factor of $1.68$. Thus, for remote TPI experiments, visibilities above $74\%$ are anticipated. The presence of n-doping only signifies higher available carrier mobility, making the presented device highly attractive for future development of high-speed tunable, high-performance quantum light sources.

In the present work, the effect of resonant pumping schemes in improving the photon coherence is investigated on InAs/InGaAs/GaAs quantum dots emitting in the telecom C-band. The linewidths of transitions of multiple exemplary quantum dots are determined under above-band pumping and resonance fluorescence via Fourier-transform spectroscopy and resonance scans, respectively. The average linewidth is reduced from $9.74\,\mathrm{GHz}$ in above-band excitation to $3.50\,\mathrm{GHz}$ in resonance fluorescence underlining its superior coherence properties. Furthermore, the feasibility of coherent state preparation with a fidelity of $49.2\,\%$ is demonstrated, constituting a step towards on-demand generation of coherent, single C-band photons from quantum dots. Finally, two-photon excitation of the biexciton is investigated as a resonant pumping scheme. A deconvoluted single-photon purity value of $g^{(2)}_{\mathrm{HBT}}(0)=0.072\pm 0.104$ and a degree of indistinguishability of $V_{\mathrm{HOM}}=0.894\pm0.109$ are determined for the biexciton transition. This represents an important step towards fulfilling the prerequisites for quantum communication applications like quantum repeater schemes at telecom wavelength.

Self-mode-locking has become an emerging path to the generation of ultrashort pulses with vertical-external-cavity surface-emitting lasers. In our work, a strong Kerr nonlinearity that is so far assumed to give rise to mode-locked operation is evidenced and a strong nonlinearity enhancement by the microcavity is revealed. We present wavelength-dependent measurements of the nonlinear absorption and nonlinear-refractive-index change in a gain chip using the Z-scan technique. We report negative nonlinear refraction up to 1.5E-11 cm2/W in magnitude in the (InGa)As/Ga(AsP) material system close to the laser design wavelength, which can lead to Kerr lensing. We show that by changing the angle of incidence of the probe beam with respect to the gain chip, the Kerr nonlinearity can be wavelength-tuned, shifting with the microcavity resonance. Such findings may ultimately lead to novel concepts with regard to tailored self-mode-locking behavior achievable by peculiar Kerr-lens chip designs for cost-effective, robust and compact fs-pulsed semiconductor lasers.

We use a laser-driven single (In,Ga)As quantum dot (QD) in the dressed state regime of resonance fluorescence ($T = 4$ K) to observe the four $D_1$-transition lines of alkali atomic cesium ($Cs$) vapor at room temperature. We tune the frequency of the dressing continuous-wave laser in the vicinity of the bare QD resonance $\sim 335.116$ THz ($\sim 894.592$ nm) at constant excitation power and thereby controllably tune the center and side channel frequencies of the probe light, i.e. the Mollow triplet. Resonances between individual QD Mollow triplet lines and the atomic hyperfine-split transitions are clearly identified in the $Cs$ absorption spectrum. Our results show that narrow-band (In,Ga)As QD resonance fluorescence (RF) is suitable to optically address individual transitions of the $D_1$ quadruplet without applying magnetic field or electric field tuning.

Charge-neutral excitons in semiconductor quantum dots have a small finite energy separation caused by the anisotropic exchange splitting. Coherent excitation of neutral excitons will generally excite both exciton components, unless the excitation is parallel to one of the dipole axes. We present a polaron master equation model to describe two-exciton pumping using a coherent continuous wave pump field in the presence of a realistic anisotropic exchange splitting. We predict a five-peak incoherent spectrum, thus generalizing the Mollow triplet to become a Mollow quintuplet. We experimentally confirm such spectral quintuplets for In(Ga)As quantum dots and obtain very good agreement with theory.

We present a detailed study of a phonon-assisted incoherent excitation mechanism of single quantum dots. A spectrally-detuned laser couples to a quantum dot transition by mediation of acoustic phonons, whereby excitation efficiencies up to 20 % with respect to strictly resonant excitation can be achieved at T = 9 K. Laser frequency-dependent analysis of the quantum dot intensity distinctly maps the underlying acoustic phonon bath and shows good agreement with our polaron master equation theory. An analytical solution for the photoluminescence is introduced which predicts a broadband incoherent coupling process when electron-phonon scattering is in the strong phonon coupling (polaronic) regime. Additionally, we investigate the coherence properties of the emitted light and study the impact of the relevant pump and phonon bath parameters.

We experimentally investigate the vortex induced energy losses in niobium coplanar waveguide resonators with and without quasihexagonal arrays of nanoholes (antidots), where large-area antidot patterns have been fabricated using self-assembling microsphere lithography. We perform transmission spectroscopy experiments around 6.25 and 12.5 GHz in magnetic field cooling and zero field cooling procedures with perpendicular magnetic fields up to B=27 mT at a temperature T=4.2 K. We find that the introduction of antidot arrays into resonators reduces vortex induced losses by more than one order of magnitude.

The heteroepitaxy of III-V semiconductors on silicon is a promising approach for making silicon a photonic platform for on-chip optical interconnects and quantum optical applications. Monolithic integration of both material systems is a long-time challenge, since different material properties lead to high defect densities in the epitaxial layers. In recent years, nanostructures however have shown to be suitable for successfully realising light emitters on silicon, taking advantage of their geometry. Facet edges and sidewalls can minimise or eliminate the formation of dislocations, and due to the reduced contact area, nanostructures are little affected by dislocation networks. Here we demonstrate the potential of indium phosphide quantum dots as efficient light emitters on CMOS-compatible silicon substrates, with luminescence characteristics comparable to mature devices realised on III-V substrates. For the first time, electrically driven single-photon emission on silicon is presented, meeting the wavelength range of silicon avalanche photo diodes' highest detection efficiency.

Single lateral InGaAs quantum dot molecules have been embedded in a planar micro-cavity in order to increase the luminescence extraction efficiency. Using a combination of metal-organic vapor phase and molecular beam epitaxy samples could be produced that exhibit a 30 times enhanced single-photon emission rate. We also show that the single-photon emission is fully switchable between two different molecular excitonic recombination energies by applying a lateral electric field. Furthermore, the presence of a polarization fine-structure splitting of the molecular neutral excitonic states is reported which leads to two polarization-split classically correlated biexciton exciton cascades. The fine-structure splitting is found to be on the order of 10 micro-eV., Comment: 14 pages, 4 figures; the following article has been submitted to Journal of Applied Physics (29th ICPS - invited paper); after it is published, it will be found at http://jap.aip.org/

We have shown experimentally that an electric field decreases the energy separation between the two components of a dense spin-polarized exciton gas in a coupled double quantum well, from a maximum splitting of $\sim 4$ meV to zero, at a field of $\sim $35 kV/cm. This decrease, due to the field-induced deformation of the exciton wavefunction, is explained by an existing calculation of the change in the spin-dependent exciton-exciton interaction with the electron-hole separation. However, a new theory that considers the modification of screening with that separation is needed to account for the observed dependence on excitation power of the individual energies of the two exciton components., Comment: 5 pages, 4 eps figures, RevTeX, Physical Review Letters (in press)

The decay $\eta \to \pi^0 \gamma \gamma$ is discussed in the framework of SU(3) chiral perturbation theory. The process is dominated by the ${\cal{O}}(p^6)$ in the momentum expansion where tree-level amplitudes from the effective Lagrangian ${\cal{L}}^6$ enter together with one--loop contributions from ${ \cal{L}}^4$ and two--loop contributions from ${\cal{L}}^2$. We estimate the 6 independent ${\cal{L}}^6$ coupling constants by resonance saturation consistent with the pion production process $\gamma \gamma \to \pi^0 \pi^0$ and calculate the pion--loop part of the one- and two--loop amplitude. Predictions for the total rate and spectrum of $\eta \to \pi^0 \gamma \gamma$ are given together with a discussion of the uncertainties involved., Comment: 24 pages, 3 tables and 8 figures. A LaTeX error has been fixed

The role of the relativistic amplitudes for a number of ${\cal O}(k)$ processes usually neglected in potential model calculations of NN--bremsstrahlung is investigated. In particular, we consider the $\Delta$--excitation pole contributions related to the one--pion and one--rho exchange and in addition include the exchange contributions induced by the radiative $\omega,\,\rho \to \pi \gamma$ decays. The contributions are calculated from relativistic Born amplitudes fitted to $\Delta$--production and absorption data in the energy range up to 1 GeV and then used to supplement potential model and soft photon calculations for nucleon--nucleon bremsstrahlung. The effects on $NN\gamma$--observables, although moderate in general, are found to be important in some kinematic domains., Comment: 15 pages in LaTex, using Revtex, 6 figures as uufile'd, compressed Postscript file included, TRIUMF preprint TRI-PP-94-90