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The hydrous material Al(PO4)0.6O0.6·zH2O (AlPO) is studied in thin-film form to determine whether bulk diffusion or near-surface densification controls thermal dehydration. From X-ray reflectivity measurements, a dense surface crust is found to form on heating AlPO films. Capacitance−voltage measurements reveal the presence of mobile protons associated with trapped −OH and H2O in the films. Deposition of a thin solution- processed HfO2 top coat on the AlPO film lowers the dehydration temperature by 250 °C. Characterization of the AlPO/HfO2 interface by medium energy ion scattering and transmission electron microscopy reveals little interdiffusion between the layers. The top coat affects densification of the near-surface region of the AlPO film, thereby amplifying water loss at low temperatures.

Inpria continues to leverage novel metal oxide materials to produce high resolution photoresists for EUV lithography with high optical density and etch resistance. Our resists have previously demonstrated 13nm line/space patterns at 35 mJ/cm2, with extendibility to 10nm half-pitch.1 We have continued to improve photospeed and in this work we provide an update on imaging performance. Since practical patterns for EUV layers will be more complicated than line/space patterns, we also expand on our previous work by demonstrating 2D resist performance using N7 (7nm node) contact and block mask patterns on full field scanners. A resist model has been created and using this model comparisons are made between a metal oxide resist and CAR platforms. Based on this physical model, the impact of shot noise is examined in relation to realistic 2D features. Preliminary data on the effect on OPC of using a non-chemically amplified resist are also presented.

New, stable aqueous solutions have been developed for the deposition of high-quality HfO2 thin films. The low ionic strength of the solution relative to a stoichiometric salt provides the means to directly spin coat a film without organic additives. Peroxide mediates particle interaction in the solution, while enabling relatively low-energy pathways for condensation of the precursor species to a film. Film structure, chemistry, and density are investigated by X-ray diffraction, FT-IR, electron-probe microanalysis, SEM, and X-ray reflectivity. Results from these measurements collectively reveal that smooth and dense HfO2 films are readily produced from the precursors with annealing at moderate temperatures. Optical properties of the films are studied by spectroscopic ellipsometry and transmission/reflection measurements. The observed refractive indices (1.89−1.93) are comparable to those achieved via vapor deposition techniques. Dielectric properties are evaluated through integration of the films into capa...

A simple, low-cost, and nontoxic aqueous ink chemistry is described for digital printing of ZnO films. Selective design through controlled precipitation, purification, and dissolution affords an aqueous Zn(OH)(x)(NH(3))(y)((2-x)+) solution that is stable in storage, yet promptly decomposes at temperatures below 150 degrees C to form wurtzite ZnO. Dense, high-quality, polycrystalline ZnO films are deposited by ink-jet printing and spin-coating, and film structure is elucidated via X-ray diffraction and electron microscopy. Semiconductor film functionality and quality are examined through integration in bottom-gate thin-film transistors. Enhancement-mode TFTs with ink-jet printed ZnO channels annealed at 300 degrees C are found to exhibit strong field effect and excellent current saturation in tandem with incremental mobilities from 4-6 cm(2) V(-1) s(-1). Spin-coated ZnO semiconductors processed at 150 degrees C are integrated with solution-deposited aluminum oxide phosphate dielectrics in functional transistors, demonstrating both high performance, i.e., mobilities up to 1.8 cm(2) V(-1) s(-1), and the potential for low-temperature solution processing of all-oxide electronics.

New thin-film dielectrics and nanolaminates have been synthesized via aqueous-solution deposition of Hf and Zr sulfates, where facile gelation and vitrification of the precursor solution have been achieved without organic additives. X-ray reflectivity, imaging, and metal-insulator-metal capacitor performance reveal that smooth, atomically dense films are readily produced by spin coating and modest thermal treatment (T

Aluminum oxide phosphate thin films have been deposited via spin coating from aqueous solution and utilized as gate dielectrics in thin-film transistors. Films are atomically smooth, dense, and amorphous, while exhibiting excellent morphological stability to 1000 °C. Film chemistry and structure are investigated by using an array of analytical techniques including X-ray diffraction, FT-IR spectroscopy, and electron-microprobe analysis. Dielectric film functionality and quality are explored through integration in capacitor and thin-film transistor devices. Film permittivity for an Al2PO5.5 composition is found to be 4.8 in combination with leakage current densities

Inpria is developing directly patternable, metal oxide hardmasks as robust, high-resolution photoresists for EUV lithography. Targeted formulations have achieved 13nm half-pitch at 35 mJ/cm2 on an ASML’s NXE:3300B scanner. Inpria’s second-generation materials have an absorbance of 20/μm, thereby enabling an equivalent photon shot noise compared to conventional resists at a dose lower by a factor of 4X. These photoresists have ~40:1 etch selectivity into a typical carbon underlayer, so ultrathin 20nm films are possible, mitigating pattern collapse. In addition to lithographic performance, we review progress in parallel advances required to enable the transition from lab to fab for such a metal oxide photoresist. This includes considerations and data related to: solvent compatibility, metals cross-contamination, coat uniformity, stability, outgassing, and rework.

A ZnO transparent thin-film transistor (TTFT) with a channel layer formed via spin-coating deposition is demonstrated. The TTFT is highly transparent and exhibits n-channel, enhancement-mode behaviour with a channel mobility as large as 0.20 cm2 V−1 s−1 and a drain current on-to-off ratio of nearly 107.

High-quality, smooth and dense HfO2 thin films are deposited by spin coating using an aqueous H2O2/HNO3 solution of the precipitate obtained from an aq.

A distinct class of precursor chemistries has been developed for solution-phase deposition of oxide thin films. Rapid liquid-to-solid conversions are facilitated by using high nuclearity species and labile inorganic ligands to promote fast condensation reactions. Consequently, applied deposition strategies differ from conventional sol-gel and surface mediated growth reactions. Select oxide materials have been incorporated in transistor devices and circuits as evidence of thin-film quality and proof of function.

Transparent electronics is a nascent technology whose objective is the realization of invisible electronic circuits. Part of the impetus for the development of transparent electronics is the recent availability of p-type transparent conductive oxides (TCOs). With the emergence of p-type TCOs, in addition to conventional n-type TCOs such as indium-tin oxide, tin oxide, and zinc oxide, fabrication of transparent bipolar electronic devices becomes feasible. The first part of this paper reviews TCOs and discusses our work in the development of p-TCOs and alternative TC materials (e.g. sulfides). We have recently invented a novel, n-channel, accumulation-mode transparent thin-film transistor (TTFT). This TTFT is highly transparent, has very little light sensitivity, and exhibits electrical characteristics that appear to be suitable for implementation as a transparent select-transistor in each pixel of an active-matrix liquid-crystal display (AMLCD). Moreover, the processing technology used to fabricate this device is relatively simple and appears to be compatible with inexpensive glass substrate technology. The second part of this paper focuses on TTFTs. If transparent electronics is employed to realize transparent back-plane electronic drivers on transparent substrates, fabrication of a transparent display becomes feasible. The third part of this paper offers an approach for realization of a transparent display.

Highperformance TFTs with solutiondeposited amorphous oxide semiconductor and gate dielectric layers are fabricated at ≤ 350 °C. The initial performance and stability of these TFTs are investigated with respect to device structure and source/drain materials. Topcontact TFTs exhibit better electrical performance and reliability than bottomcontact devices. Representative topcontact device mobility is 1.90 cm2/Vs with an ontooff drain current ratio of 7.0 × 108.

We describe a technique for substantially decreasing the noise in SQUID measurement applications which are intrinsically low frequency or dc and thus fall below the 1/f knee in the SQUID noise energy spectrum. The technique involves reversing the SQUID input leads at a chopping frequency of ∼100 Hz using laser‐driven switches which form a double‐pole–double‐throw network. For sufficiently low noise switching, the demodulate output no longer contains the SQUID low‐frequency noise but rather noise at the SQUID white‐noise floor. We present data demonstrating the low noise performance of a single laser switch, and include the electronics design required for the full implementation of the scheme.