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22. Charateristics of Low Temperature High Quality Silicon Oxide by Plasma Enhanced Atomic Layer Deposition with In Situ Plasma Densification Process

Author

Hai-Won Kim, Shin Seung-Woo, Jeong Choon-Sik, Wooduck Jung, Hwang Han-Na, Ryong Hwang, Ilsub Chung, Park Seong-Jin, and Sergey N. Zaretskiy

Subjects
Materials science, business.industry, Chemical shift, Radical, Binding energy, Electrical engineering, Analytical chemistry, chemistry.chemical_element, Plasma, Oxygen, Atomic layer deposition, X-ray photoelectron spectroscopy, chemistry, business, Silicon oxide
Abstract

We have researched low temperature silicon oxide (SiO2) with improved electrical properties and excellent film step-coverage. In-situ O2 plasma densification (DENSIFICATION) effect on SiO2 that has been deposited by PE-ALD at temperature (2 network defects by the oxygen radicals. Angle Resolved X-ray Photoelectron Spectroscopy (AR-XPS) analysis was carried out to observe the core-level binding energies shifts (chemical shifts) in the different SiO2 films. The characteristics of wet etch rate of high quality low temperature SiO2 demonstrated lower than high temperature LP-CVD SiO2 values. Compared to LP-CVD SiO2, PE-ALD SiO2 with DENSIFICATION showed excellent I-V characteristics with lower leakage current and similar to the thermal SiO2 carrier transport plot.

Published
2013
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29. Improved film quality of plasma enhanced atomic layer deposition SiO2 using plasma treatment cycle

Author

Ryong Hwang, Hai-Won Kim, Jeong Choon-Sik, Hwang Han-Na, Wooduck Jung, Kim Seok-Yun, Shin Seung-Woo, and Ilsub Chung

Subjects
Materials science, Silicon dioxide, Analytical chemistry, Surfaces and Interfaces, Plasma, Chemical vapor deposition, Condensed Matter Physics, Surfaces, Coatings and Films, Ion, chemistry.chemical_compound, Atomic layer deposition, X-ray photoelectron spectroscopy, chemistry, Breakdown voltage, Thin film
Abstract

Chemical, physical, and electrical characteristics of high quality silicon dioxide (SiO2) films grown using low temperature plasma enhanced atomic layer deposition (PE-ALD) have been investigated as a buffer layer for three dimensional vertical nand flash memory devices. The comparative angle resolved x-ray photoelectron spectroscopy studies show the plasma treatment cycle causes to shift the core level binding energy (chemical shifts) in the SiO2 film. The wet etch rates with respect to plasma treatment cycle times were varied due to curing of the SiO2 network defects by Ar+ ions and oxygen radicals. It is assumed that the angle between the bonds linking SiO4 tetrahedra is a critical point understanding the variation in wet etch rate of SiO2. The features of wet etch rate of low temperature high quality SiO2 demonstrated lower than high temperature low-pressure chemical vapor deposition (LP-CVD) SiO2 values. In addition, the better step-coverage compared to that of the LP-CVD SiO2 film was achieved from the deep trench structure having the 20:1 aspect ratio. PE-ALD SiO2 with plasma treatment cycle showed excellent I–V properties with higher breakdown voltage compared to LP-CVD SiO2 and similar to the thermal SiO2 carrier transport plot.

Published
2015
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